201235518 六、發明說明： 【發明所屬之技術領域】 本案是關於-種藍寶石材料及其製作方法，特別是關於一 種具有一成長軸向的藍寳石材料及其製作方法。 【先前技術】 近年來，由於智慧型手機的需求大幅增加，因此，智慧型 手機所使_零組件的需求也隨之增加。這些零Μ件包含了用 於手機相機的保魏或是手朗控吨 ㈣，它們大多是以朗為主要材料，而手機上的按^、商 標的裝置圖案所使用的材料也從金屬材料逐漸改成透明的材 ^ _材料雖然有容易取得、成本較低、以及容易加工的優 ^然而其硬度不佳、抗錢衫足_醜質之缺點造成其 在貫際應用上之_。雖賴由硬質賴與化雜子強化等工 藝可以改善上述缺點，但也反應城本及環境_題。 在習知玻璃生產加工的過輕中，一般消費型電子產品所使 ^的無驗_麵_條件τ，無·_加錄化形成玻璃 過製造過財的縣後，空氣以及师料混入該無 双破璃的玻璃τ之中；這種情況使得該產品的良率不佳。因 ^在無驗玻璃的製程中，通常需要加入如石中以及齒化物等輔 才料以消除在玻璃膏中的氣泡以及雜質。石申為對人體有宝之 強烈毒性物質，其會引發石申中毒或烏腳病等後遺症，因此:石申 =於衣程中的作業人員的安全具有潛在的影響。鹵化物對於溫 至效應的影料二氧化销數倍，且自化物早已經被歐盟等先 201235518 進國家及區域禁止使用。 八保的要求’美國康寧公司以及日本旭硝子 赠吻咖，其基本 =理為在玻摘表轉成—單㈣層錢_表面 硬化的效果。但即使如此，此類玻璃經過加喊序如研磨、鑽 ^抛光二及倒角等加工製程後仍需要經過化學離子強化製 程’接下來减㈣縣賴製程的處理才能將玻射的鋼離 子，雜質置換出來’叫除在玻翻晶體内之微缺陷與應力， 使得玻璃内的原子排列更加緻密而增加_之強度。 請參閱第-圖，其為破璃加工製程的示意圖。在傳統的破 离加工衣程巾為了迎合產品設計師對外觀的要求及消費者對 外觀的喜好，因此-般玻雜製造完錢，會送進玻璃加工廢 對玻璃的外觀進行加工以符合最終產品之外觀需求。玻璃加工 的製程包括：破縣板賴切、雜分片、邊緣研磨、高速電 腦數值控麵(CNQ狐加工、玻德板的絲之研磨、玻璃 基板的表Φ之縣、離子交祕學触製程、玻縣板錄膜、 破璃基板物、誠轉、岐成品組裳。 在第一圖中’玻璃基材送至玻璃加工廠後會對其進行適當 大小之裁切，利用鑽石刀於破璃基材的平板上割劃出所需之大 小’再以崩_方式分_關好適#大小之朗基板。所述 適畜大小之玻璃基板在取出後即送至加工區域對玻璃基板的 邊緣進行研磨及倒角，以避免玻璃基板的邊緣之銳角割傷操作 人員並可有效避免在操作過程中造成產品邊緣的崩角及裂縫 等。破璃基板的邊緣經研磨甸角完後會依據產品需求在玻璃基 201235518 板上進行如高速f職健職鑽孔加卫等製程，以根據需求 的玻璃基板之外形來加工。 在破璃基板之外形加卫完成後’ g卩會對賴基板進行研 磨’以將破魏板之厚度研磨至適當厚度大小。絲，對玻璃 基板進行抛光，鱗细拋光鑛_基_表面進行亮面之 ，光丄在_聽之抛光完錢，會立即對麟基板進行化學 離子父換’以將玻璃基板置於炼融狀態的鉀鹽中使玻璃中的鈉 離子破置触峰子。在_基板完献學鮮 即完成化學強化製程。 1 在化學強化製程完成後，依照需求進行鐘膜，所述錄膜亦 可再細分為功能性錄膜與裝飾性鍍膜。由於經過一系列之加工 程序後’玻嚇板的絲性#會有攸變，㈣祕錄膜則可 改善破璃之光學㈣一般會在玻魏板的相或雙侧製作透 明的抗反射鍍騎’此賴膜層材料為金魏化物或半導體氧 t物。而裝雜鍍_可讓_基板具錢炫麗⑽觀。而在 ^基板之表面上施行㈣程…般使祕觀金屬氧化物做 ^材枓，利用物理氣她積(PVD)之方法將材觀積於玻璃基 依ίίΓ吏其外觀具有金屬的綺。鍍膜完成後之_基板則 4求可添加如網版絲印或鋼板油墨轉印等印刷製程，並於 璃基板之背面黏點高分子膠使其與其它零件做肢。 下列表1列出藍寳石的各晶體糾與強化麵°在物 性與光學特性上的比較。 7 201235518 特性 單位 藍寶石 C-axis 藍寶石 A-axis 藍寶石 R-axis 藍寶石 M-axis 強化玻璃 硬度 Kgf/cm2 2150±50 1850±50 2200±50 1850±50 674 揚氏係數 GPa 460±50 460±50 460±50 460±50 71.7 抗壓強度 MPa 22000 ^2000 22000 ^2000 2800 熱傳導係數 W/m-k 32±5 32±5 32±5 32 土 5 1.2 透光率 % >85 >85 >85 >85 >90 表1 因為強化玻璃的硬度與抗壓強度比藍寶石差，而且藍寶石 經過適當的加工以及鍍膜後的光學特性接近強化玻璃，因此藍 寶石適合當作高硬度與高抗壓強度的透明光學材料。藍寶石與 紅寶石的主要成分皆為三氧化二鋁(α _Al2〇3)，由三氧化二鋁結 曰曰所形成的寶石稱為剛玉(⑶订^如]^)礦石，然而藍寳石因其含 有二氧化鈦_質而呈現藍色，紅寶石因其含有氧化鉻而呈現 紅色，紅寶石亦可作為光學材料。 習知的藍 石長晶技術包括維拉法(yemeuil)、凱式 (Kyropoulos)·^曰法，熱交換法扣故饮也肪辟咖脇)等。維拉 法所I成之if石易碎且尺寸小，科合製作大尺寸的藍寶 :，灣專利申請號2〇〇_〇的文射提到 監實石的成長裝置鱼方法，兮室 舍；?；，雜PA Ρ。方法轉利所^及之生長C軸向的藍 的趣，作“…輪向之皇寶石可作為LED(例如氮化鎵LED) 外二錢:右、錢所長出之藍寶石除生長相久且耗費能量 外於應用時更不利於後續加卫。 行认且耗費犯里 【發明内容】 生長C㈣之、A轴向之方法經過長時間的驗證後比 "貝石更具有生產的效益，較低的位錯密度。 201235518 而依照不同需求，利用吾人發明此A轴向成長的藍寳石亦可 適用於各種不同的用途。 有馨於上述強化破璃的硬度與抗墨強度不足，一種 材料的，造方法被提出，包含下列步驟··將一藍寶石晶種接種 至-溶融體内。逐漸向上提拉該藍f石晶種而在_體物造201235518 VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a sapphire material and a method for fabricating the same, and more particularly to a sapphire material having a growth axis and a method of fabricating the same. [Prior Art] In recent years, as the demand for smart phones has increased significantly, the demand for components of smart phones has also increased. These parts include Bao Wei or Handan Control (T) for mobile phone cameras, most of which are based on lang, and the materials used in the device pattern of the ^, trademark on the mobile phone are gradually gradually removed from the metal material. Changed into a transparent material ^ _ material, although easy to obtain, low cost, and easy to process excellent ^ However, its hardness is not good, anti-money wear _ ugly quality caused by its application. Although the above-mentioned shortcomings can be improved by processes such as hard reliance and chemical strengthening, they also reflect the city and the environment. In the lightness of the conventional glass production and processing, the general consumer electronic products make the non-inspection _ condition τ of the ^, _ _ _ add to the county where the glass has been manufactured, the air and the teacher materials are mixed into the Unmatched glass τ; this situation makes the product's yield poor. In the process of glassless inspection, it is usually necessary to add auxiliary materials such as stones and teeth to eliminate bubbles and impurities in the glass paste. Shishen is a highly toxic substance that has a treasure for the human body. It can cause sequelae such as Shishen poisoning or blackfoot disease. Therefore, Shishen = the safety of workers in the clothing process has a potential impact. Halides are several times as large as the temperature-dependent effect of the dioxide, and the self-chemicals have long been banned by the EU and other 201235518 countries and regions. The requirements of the eight guarantees, the United States Corning Corporation and Japan Asahi Glass gift kiss coffee, its basic = rationale in the glass table into a single (four) layer of money _ surface hardening effect. However, even if such a glass is subjected to a process such as grinding, drilling, polishing, and chamfering, it still needs to undergo a chemical ion strengthening process, and then the process of reducing the (four) county's Lai process can bring the molten steel ions. The impurity is replaced by a micro-defect and stress in the glass-turned crystal, which makes the atomic arrangement in the glass more dense and increases the intensity. Please refer to the figure-figure, which is a schematic diagram of the glass processing process. In order to meet the requirements of the product designer's appearance and the consumer's preference for the appearance of the traditional fabric-breaking garment towel, the glass will be processed into the glass processing waste to process the appearance of the glass to meet the final The appearance of the product. The processing of glass processing includes: broken county board, cutting, edge grinding, high-speed computer numerical control surface (CNQ fox processing, glass grinding of glass plate, table of glass substrate Φ county, ion exchange secret touch Process, glass plate film, glass substrate, Chengzhuo, 岐 finished group skirt. In the first picture, 'the glass substrate will be cut to the appropriate size after being sent to the glass processing plant, using a diamond knife. The slab of the glazed substrate is cut to the required size, and then the slab is smashed into a size. The sized glass substrate is sent to the processing area to the glass substrate after being taken out. The edge is ground and chamfered to avoid sharp corners of the edge of the glass substrate, and the operator can be effectively prevented from causing chipping and cracking of the edge of the product during operation. The edge of the glass substrate is finished after grinding the corner. The product requirements are processed on the glass-based 201235518 board, such as high-speed f-job drilling and reinforcement, and processed according to the shape of the glass substrate. The shape of the glass substrate is completed after the completion of the glass substrate. Carry out research Grinding 'to grind the thickness of the broken board to the appropriate thickness. Silk, polishing the glass substrate, polishing the _ base _ surface for the bright surface, the light in the _ listening to the polished money, will immediately The substrate is subjected to chemical ion replacement to place the glass substrate in the potassium salt of the fused state to break the sodium ions in the glass. The chemical strengthening process is completed after the _ substrate is completed. 1 The chemical strengthening process is completed. After that, the film is processed according to the requirements, and the film can be subdivided into functional film and decorative film. After a series of processing procedures, the silkyness of the glass will change, (4) The film can improve the optics of the glass. (4) Generally, a transparent anti-reflective plating can be made on the phase or both sides of the glass plate. The material of the film is gold or a semiconductor oxide. _The substrate has the money and dazzling (10) view. On the surface of the ^ substrate, the (four) process is used to make the metal oxides of the secret metal, and the material is accumulated in the glass based on the method of physical gas (PVD).外观The appearance of the metal has a flaw. After the coating is completed, the substrate 4 can be added to the printing process such as screen printing or steel plate ink transfer, and glue the polymer glue on the back of the glass substrate to make limbs with other parts. Table 1 lists the crystal strengthening and strengthening surface of sapphire °Comparative in physical and optical properties. 7 201235518 Characteristic unit sapphire C-axis Sapphire A-axis Sapphire R-axis Sapphire M-axis Strengthened glass hardness Kgf/cm2 2150±50 1850±50 2200±50 1850±50 674 Yang Coefficient GPa 460±50 460±50 460±50 460±50 71.7 Compressive strength MPa 22000 ^2000 22000 ^2000 2800 Heat transfer coefficient W/mk 32±5 32±5 32±5 32 Soil 5 1.2 Transmittance % > ;85 >85 >85 >85 >90 Table 1 Because tempered glass has lower hardness and compressive strength than sapphire, and sapphire is properly processed and the optical properties after coating are close to tempered glass, sapphire is suitable for Transparent optical material with high hardness and high compressive strength. The main components of sapphire and ruby are aluminum oxide (α _Al2〇3), and the gemstone formed by the aluminum oxide crucible is called corundum ((3) ordered ^^) ore, but sapphire contains it. Titanium dioxide is blue in color, ruby is red in color because it contains chromium oxide, and ruby can also be used as an optical material. The well-known bluestone crystal growth technology includes yemeuil, Kyropoulos, and the method of heat exchange. Vera's I-made stone is fragile and small in size. Kobe produces a large-sized sapphire: The patent application number of the Bay 2 〇〇 〇 〇 提到 提到 提到 提到 提到 监 监 监 监 监 监 监 监 监 监House;?;, miscellaneous PA Ρ. The method of translating the growth of the C-axis of the blue is interesting, as "...the wheel of the emperor can be used as an LED (such as gallium nitride LED). 2. Money: The sapphire grown by the right and the money is long-lasting. The energy consumption is more unfavorable for the subsequent reinforcement when applied. The recognition and consumption of the crime [invention content] The method of growing C (four), A-axis is more productive than the "be stone" after a long time of verification. Low Dislocation Density 201235518 According to different needs, the sapphire which we have invented in this axial growth can also be applied to various purposes. The hardness and ink resistance of the above-mentioned reinforced glass are insufficient, a material The method of making is proposed, comprising the following steps: inoculating a sapphire seed crystal into the -melt body. Gradually pulling up the blue f stone seed crystal and making it in the body
溫度梯度以使其逐漸冷卻，並使該炫體物在該藍寶石晶種的A 轴向結晶=形成-藍寶石晶體。自該藍寶石晶體在—特定轴向 提取該藍寳石材料。 依據上述構4 ’另一種監寶石材料的製造方法被提出，包 3下列步m寶石晶種接種至—频物。以熱交換方 使該熔體物逐漸冷卻，而使該溶體物 、工 ,„ 次：貝七日日檀的A點 提^藍==寶石晶體。自該藍寶石晶體在一特定轴向 長軸向係該藍寶石晶體的A轴向，A轴向^石曰體^成 成時則會根據_形狀而形成_、方形或多、J體成長完 狀。 $夕邊形之晶體型 晶體 依據上述構想，—種藍寶石材料被提H勺人 :’該藍寶石晶體具有-成長軸向，=3 —藍寶石 寶石晶體的A軸向。 ~成長軸向係該藍 =聽，—麵料妓 騾.供具有一成長軸向的藍寶石晶髀， 匕S下列步 藍寶石晶體的A幸由向。自該藍寶石“在中，成長輛向係該 月且在一特定麵提取該 201235518 藍寳石材料，其中該特定軸向係垂直於該藍寳石晶體的A軸 向。 依據上述構想，一種藍寳石材料被提出，其包含：—藍金 石晶體’該藍寶石晶體具有-成長軸向，其中該成長耗二 藍寶石晶體的a軸向。 【實施方式】 以下的實施例主要是說明藍寶石材料、其製造方法、及其 加工方法’本案的製造方法以及加工方法亦可應用於其他之剛 玉材料。關於藍寶石材料的應用可參閱台灣專利申請號 100142110以及台灣專利申請號i00149015兩篇文獻。 請參閱第一圖(a) ’其為本案第一較佳實施例凯式長晶設備 的示意圖。凱式長晶設備20包含電阻加熱器2〇1、坩鎬2〇2、 藍寶石晶種205、電流鋼環206、以及隔熱屏207。電阻加熱 器201的材質為鎢或鎢合金，且與電流銅環206耦接。電流鋼 環206被施加電流以使電阻加熱器2〇1產生熱量而加熱該坩鍋 202。該坩鍋202傳導該熱量，並且藉由該熱量，熔體物2〇3 熔化為液態。熔體物203的成分為高純度三氧化二鋁之藍寶石 原料。坩鍋202的材質為鎢、鉬合金、或石墨。藍寶石晶種 2〇5係為在a轴向成長的藍寶石晶種205。訊式長晶設備2〇形 成在藍寶石晶種205與熔體物203之間的固液介面形成物 204。隔熱屏207的材質為鉬或鎢，其用以隔絕該熱量而避免 §玄熱量散發以保持坩鍋202内部之溫度。 在本案第一較佳實施例中製造藍寶石材料的方法如下說 明。先將二氧化二鋁之藍寶石原料置於坩鍋2〇2中，然後將具 201235518 有A軸向的監賃石晶種205與該三氧化二銘之藍寳石原料接 觸以種植晶種。在第二圖⑻中，藍寶石晶種205的&軸向係為 垂直的(perpendicular)軸向。加熱該三氧化二鋁之藍寶石原料 以形成熔體物203、或形成熔體物203與固液介面形成物2〇4。 藉由逐漸將藍寶石晶種205向上拉提造成溫度梯度以使熔體 物203逐漸冷卻；此時熔體物203與固液介面形成物2〇4會在 藍寶石晶種2〇5的A轴向來結晶，而固液介面形成物2〇4與 熔體物203冷卻後則形成藍寳石晶體2〇8。因此，如第二圖⑼ 所示，藍寳石晶體208亦具有A軸向之成長軸向。 θ 請參閱第二_，其為本案藍寶石晶體2〇8的示音圖。 接下來，自藍寶石晶體2〇8提取出藍寶石材料挪以騎後續 的加工。在提取時，依據需求利用測向工具(未顯示)確定該二 =體208的各軸向後再進行提取。提取的方法較佳為二 (金_)或切割(c她g 〇_方式。例如，.想要提取難狀的誌 二:材_，則以空心圓柱狀的軸取出圓柱狀： 材料2〇9，若要提取矩型柱狀或多邊形 則可利用讀石刀具來切割。藍寶石材料209是在—特定 取，射補絲向是妓於A _ 施例中’自藍f石晶體2。8在其。= :取㈣石材料2°9，—水平—) 在另-触實關巾，騎知 =細在該藍寶石晶體208的。轴向偏二 _，及在卿獨2Q8心 •201235518 。在上侧度範圍内所提取崎寶石材 向來但是當以完全垂直於a — 耒美取知，由於藍寳石晶體2〇8 頭來饈跑廿丁〜日 牙、、、。構的關係，要使用鑽 _，取並不谷易。故該特定轴向較佳為在該藍寶石晶體的c 轴向角度卿·5。，及該特定轴向較佳為在該藍寶 日日體的c軸向偏m軸向角度么5。或2 5 的a轴向偏c轴向角度_2 5。〜2 5。的篇图^在&貝石曰曰體 的乾圍，及在該藍寶石晶體的 a軸向偏m軸向角度_2.5。〜2.5。的範 轴向體如 •括±丄々 園及在該監寶石晶體的m f ^ "2·5^ 不健易進行鑽取，且鑽取出來的藍寳石枋料亦具 父，光性。該特定轴向之米勒指數包括：c 、 叫 11 2〇;1 2 1〇;…;Π 2- 0; ! 2 i 〇; ” )、 "她(〇 1 1〇;1 1 〇〇;1〇 ί _ Μ M〇〇; I _、或 地 is(_;师;_;i〇li;il〇1;〇ili)。 一 制、/月Γ閱第"'圖’其為本案第一較佳實施例藍寳石材料 衣k方法的不思圖。該方法包含下列步驟：步驟咖，將一 藍ί石晶種205接種到1體細。步驟纖，向上拉提該 加3在該藍寶石晶種二冷卻，使該炫體物 的a軸向結晶以形成一藍寳石晶體 :。步驟S203 ’自镜藍寶石晶體期在一特定轴向提取該藍 貝石材料2G9 ’其中_特定轴向係垂直於該藍寶石晶種2仍的 a軸向。 ^閱第四® ’其為杨第二較佳實施例熱交換之設備 201235518 3〇的示意圖。熱交換設備30包含電阻加熱器30卜坩鍋3〇2、 監寶石晶種305、電流線圈306、隔熱屏307、以及熱交換管 308。電阻加熱器3〇1與電流線圈3〇6耦接。電流線圈3〇6被 施加電流以使電阻加熱器301產生熱量而加熱該坩鍋3〇2，該 _形狀可為圓型、方形或多邊形，生長出之晶體則會依據堆 鋼形狀而成監寶石晶體。該掛銷302傳導該熱量，並且藉由該 熱量，熔體物303熔化為液態。熔體物3〇3的成分為三氧化二 銘之藍寳石原料。監寶石晶種3〇5係為在a軸向成長的藍寶石 晶種305。熱交換設備30形成在藍寶石晶種3〇5與熔體物3〇3 之間的固液介面形成物304。 在本案第二較佳實施例中製造藍寳石材料的方法如下說 月先將二氧化二銘之藍寶石原料置於掛鋼302中，然後將具 有a軸向的藍寶石晶種3〇5與該三氧化二鋁之藍寶石原料接觸 以種植晶種。在第四圖中，藍寶石晶種3〇5的&軸向係為垂直 的(perpendicular)軸向。加熱該三氧化二鋁之藍寶石原料以形 成熔體物303、或形成熔體物303與固液介面形成物3〇4。熱 父換管308内部有冷卻水或氣體，藉由熱交換管308内的冷卻 水或氣體之循環，以熱交換的方式將固液介面形成物304以及 熔體物303内的熱量帶出，而可使固液介面形成物304以及熔 體物303由下往上逐漸冷卻；此時熔體物303與固液介面形成 物304會在監賈石晶種305的a軸向來結晶，而固液介面形成 物304與熔體物303冷卻後形成如第二圖(b)所示的藍寶石晶 體2〇8。因此，藍寶石晶體208亦具有a軸向，藍寶石晶體208 之形狀可依據坩鍋形狀加以變更，除於發明中所提示之圓形外 201235518 亦可依_途騎_狀進行設計， 掛鋼’使得最終生長完成之藍寶石^ 坩鎬，The temperature gradient is such that it gradually cools and the glaze crystallizes in the A-axis of the sapphire seed = formation - sapphire crystal. The sapphire material is extracted from the sapphire crystal in a specific axial direction. According to the above-mentioned construction method of another gemstone material, it is proposed that the gem seed crystal of the following step is inoculated to the frequency object. The melt is gradually cooled by the heat exchange to make the solution, the work, „次: A point of the 7th day of the Tanjong Tan = blue == gem crystal. Since the sapphire crystal is long in a certain axial direction The axial direction is the A-axis of the sapphire crystal, and when the A-axis is formed, the stone body is formed according to the shape of the _, the square or the J body, and the J body is grown. The above concept, a kind of sapphire material is raised by H scoop: 'The sapphire crystal has - growth axis, = 3 - A axis of sapphire gemstone crystal. ~ Growth axis is the blue = listen, - fabric 妓骡. A sapphire crystal with a growing axis, 匕S the following step A of the sapphire crystal. From the sapphire "in the middle, the growth of the car to the month and the extraction of the 201235518 sapphire material on a specific surface, wherein the specific The axial direction is perpendicular to the A-axis of the sapphire crystal. In accordance with the above concept, a sapphire material is proposed which comprises: - sapphire crystals - the sapphire crystal has a - growth axis in which the growth consumes the a-axis of the sapphire crystal. [Embodiment] The following examples mainly illustrate a sapphire material, a method for producing the same, and a method for processing the same. The manufacturing method and processing method of the present invention can also be applied to other corundum materials. For the application of sapphire materials, refer to Taiwan Patent Application No. 100142110 and Taiwan Patent Application No. i00149015. Please refer to the first figure (a)' for a schematic view of the first-class preferred embodiment of the Kay extended crystal device. The Kayfeld crystal growth apparatus 20 includes an electric resistance heater 2〇1, 坩镐2〇2, a sapphire seed crystal 205, a current steel ring 206, and a heat shield 207. The resistance heater 201 is made of tungsten or a tungsten alloy and is coupled to the current copper ring 206. The current steel ring 206 is energized to cause the electric resistance heater 2〇1 to generate heat to heat the crucible 202. The crucible 202 conducts the heat, and by the heat, the melt 2〇3 is melted into a liquid state. The composition of the melt 203 is a high purity aluminum sapphire raw material. The material of the crucible 202 is tungsten, molybdenum alloy, or graphite. Sapphire seed crystal 2〇5 is a sapphire seed crystal 205 that grows in the a-axis. The crystal growth apparatus 2 is formed into a solid-liquid interface formation 204 between the sapphire seed crystal 205 and the melt 203. The heat shield 207 is made of molybdenum or tungsten to isolate the heat and prevent the heat from being dissipated to maintain the temperature inside the crucible 202. The method of manufacturing the sapphire material in the first preferred embodiment of the present invention is as follows. First, the sapphire raw material of the alumina is placed in a crucible 2〇2, and then the sapphire material 205 having the A-axis of 201235518 is contacted with the sapphire material of the bismuth oxidized to seed the seed crystal. In the second diagram (8), the & axial direction of the sapphire seed crystal 205 is a perpendicular axial direction. The alumina sapphire material is heated to form a melt 203 or a melt 203 and a solid-liquid interface former 2〇4. By gradually pulling the sapphire seed crystal 205 upward to form a temperature gradient to gradually cool the melt 203; at this time, the melt 203 and the solid-liquid interface formation 2〇4 will be in the A-axis of the sapphire seed crystal 2〇5. Crystallization, while the solid-liquid interface formation 2〇4 and the melt 203 are cooled to form a sapphire crystal 2〇8. Therefore, as shown in the second figure (9), the sapphire crystal 208 also has an A-axis growth axis. θ Please refer to the second _, which is the sound map of the sapphire crystal 2〇8. Next, the sapphire material is extracted from the sapphire crystal 2〇8 to ride the subsequent processing. At the time of extraction, the axial direction of the two bodies 208 is determined by using a direction finding tool (not shown) according to requirements. The extraction method is preferably two (gold _) or cut (c her g 〇 _ way. For example, if you want to extract the difficult shape: material _, the cylindrical shape is taken out of the cylinder: material 2〇 9, if you want to extract the rectangular column or polygon, you can use the stone cutter to cut. The sapphire material 209 is in the specific take, the fill wire direction is in the A _ in the example 'from the blue f stone crystal 2. 8 In it. = : Take (four) stone material 2 °9, - level -) In the other - touch the towel, ride know = fine in the sapphire crystal 208. The axial direction is two _, and in the Qing alone 2Q8 heart • 201235518. The sapphire material extracted in the upper degree range has always been known, but when it is completely perpendicular to a-comparable, the sapphire crystal is 2 〇 8 heads to run the 〜 〜 日 日 日 日 日 日 日. To construct a relationship, you should use the drill _, which is not easy. Therefore, the specific axial direction is preferably at the c-axis angle of the sapphire crystal. And the specific axial direction is preferably the axial direction of the c-axis of the sapphire body. Or a 5 of the axial direction of the c-axis is _2 5 . ~2 5. The picture ^ is in the dry circumference of the & Beishi body, and the axial direction of the sapphire crystal is inclined at an axial angle of _2.5. ~2.5. The sapphire material of the sapphire material, such as the 丄々 丄々 garden and the m f ^ "2·5^ in the gemstone crystal, is not easy to drill, and the sapphire material extracted from the drill is also father and light. The Miller index of the specific axis includes: c, called 11 2〇; 1 2 1〇;...;Π 2- 0; ! 2 i 〇; ”, "She (〇1 1〇;1 1 〇〇 ;1〇ί _ Μ M〇〇; I _, or ground is(_;师;_;i〇li;il〇1;〇ili). One system, / month reading the first 'quote' The first preferred embodiment of the present invention is a sapphire material coating method. The method comprises the following steps: step coffee, inoculate a blue stone seed crystal 205 into a body fine. Step fiber, pull up the addition 3 Cooling in the sapphire seed crystal, the a-axis of the glare is crystallized to form a sapphire crystal: Step S203 'Separate from the mirror sapphire crystal phase to extract the sapphire material 2G9 in a specific axial direction. The axial direction is perpendicular to the a-axis of the sapphire seed crystal 2. See the fourth version 'which is a schematic diagram of the device of the second preferred embodiment of the heat exchange apparatus 201235518 3〇. The heat exchange device 30 includes the electric resistance heater 30 The dice pot 3〇2, the gemstone seed crystal 305, the current coil 306, the heat shield 307, and the heat exchange tube 308. The electric resistance heater 3〇1 is coupled to the current coil 3〇6. The current coil 3〇6 is applied. Current The electric resistance heater 301 generates heat to heat the crucible 3〇2, and the shape may be a round shape, a square shape or a polygonal shape, and the grown crystal may be a gemstone crystal according to the shape of the stack steel. The hanging pin 302 conducts the heat. And by the heat, the melt 303 is melted into a liquid state. The composition of the melt 3〇3 is a sapphire material of bismuth trioxide. The gemstone seed crystal 3〇5 is a sapphire crystal grown in the a-axis. 305. The heat exchange device 30 forms a solid-liquid interface formation 304 between the sapphire seed crystal 3〇5 and the melt 3〇3. The method for manufacturing the sapphire material in the second preferred embodiment of the present invention is as follows: First, the sapphire raw material of the second sulphur dioxide is placed in the hanging steel 302, and then the sapphire seed crystal 3〇5 having the a-axis is contacted with the sapphire raw material of the aluminum oxide to seed the seed crystal. In the fourth figure, The axial direction of the sapphire seed crystal 3〇5 is a perpendicular axial direction. The sapphire raw material of the alumina is heated to form a melt 303, or a melt 303 and a solid-liquid interface formation 3 are formed. 〇 4. Hot parent change tube 308 has cooling water or gas inside, with heat The circulation of cooling water or gas in the exchange tube 308 is carried out by heat exchange to remove the heat in the solid-liquid interface formation 304 and the melt 303, so that the solid-liquid interface formation 304 and the melt 303 can be The bottom portion is gradually cooled; at this time, the melt 303 and the solid-liquid interface forming material 304 are crystallized in the a-axis of the jasmine seed crystal 305, and the solid-liquid interface forming material 304 and the melt 303 are cooled to form a second. The sapphire crystal 2 〇 8 shown in Figure (b). Therefore, the sapphire crystal 208 also has an a-axis direction, and the shape of the sapphire crystal 208 can be changed according to the shape of the crucible, except for the circular shape indicated in the invention 201235518 Designed according to the _ ride _ shape, hanging steel 'so that the final growth of the sapphire ^ 坩镐,
監寳石晶 工。在本案第二 日日體可依照堆銷形狀生長， 坩鍋亦可為方型或多邊形Gemstone crystal. In the second day of the case, the body can grow according to the shape of the pile, and the crucible can also be square or polygonal.
實施例中提取藍寶石晶體的方式與本 安筮一*-/丄一 ” _ 口口肌工、興尽 术弟較包貫施例相同，因此不再贅述。 制ο閱第五圖’其為本案第二較佳實施例藍寶石材料· f造方法的示意圖。該方法包含下列步驟：步驟讀，將一 藍寶石晶種305接種至-溶體物303。步驟驗，以熱交換方 式使該炫體物303逐漸冷卻，而使該炫體物303在該藍寶石晶 種305的a軸向結晶，以形成一藍寶石晶體2〇8。步騾s3〇3， 自該監寶石晶體208在一特定軸向提取該藍寶石材料2〇9，其 中該特定軸向係垂直於該藍寶石晶種3〇5的a軸向。 該藍寶石材料209的晶體軸向較佳為c_軸向(〇〇〇1)、a_軸 向[包括(ήιο)、（ιΰο)、（2ΪΪ0)、（Π20)、（$110)、以及(ί2ϊ〇)]、m_ 軸向[包括(ioio)、（iioo)、（oiio)、（ιοϊο)、（如0)、以及(―刀、和 r-軸向[包括(ιοίι)、（Μ)、（oiii)、（οϊιι)、（涵）、以及的其 中之一 ’在提取藍寶石材料209後’接下來是對其進行加工的 步驟。加工的步驟包括：外形研磨、線切加工、研磨抛光、外 形切割、倒角研磨、鍍膜、以及裝飾等步驟。 請參閱第六圖(a)與第六圖(b) ’其為本案第三較佳實施例 線切加工設備40的示意圖。線切加工設備40包含驅動裝置 42，驅動裝置42包含一主槽輪44與一鑽石導輪組46。複數 鑽石線48環繞於驅動裝置40上，複數鑽石線48之間的間距 12 201235518 在0·65〜L85_的範圍，因此該藍寶石材料的一切割間距 在0.65.85腿的範圍。當對藍寶石材料·切割時，藍寶 石材料209被施加-力F，且該驅動裂置42執行一擺動運動 (Rocking)贿該複數鎮石線產生一張力τ。利用該張力τ及鑽 石線之運動對該藍寶石材料2〇9進行切割而形成一藍寶石基 板5〇4。切割後’該藍寶石基板5〇4的一厚度在Μ〜i 0mm的 辄圍。 «ή閱第七®(a) ’其為本案第四較佳實施例研磨設備％ 的示·意圖。研磨設備50包含上研磨盤5〇1、下研磨盤5〇5、以 及鏤空圓形載盤5〇3。由於線切割後的藍寶石基板5〇4在其切 割之-第-表面5041與-第二表面5〇42上會產生切割痕跡， 因此需要進行研磨以及減薄的加工。首先，將藍寶石基板SO* 置於鏤空_載盤503中加以固定，再利用上研磨盤5〇1與下 研磨盤5〇5之轉動進行研磨。鏤空圓形載盤5〇3的内外緣具有 齒輪5031而與上研磨盤5〇1内緣的齒輪5〇11以及下研磨盤 505外緣的齒輪嘴合，藉由上研磨盤5〇1内緣的歯輪观以 及下研磨盤505外緣的齒輪喷合並帶動縷空圓形載盤5〇3 ;此 時T主入研磨物質502，以上研磨盤、下研磨盤5Q5 分別研磨戎監寶石基板504的第一表面5〇41與第二表面 5042，其中該研磨物質502為鑽石磨粒。 口月ΐ閱第七圖(b) ’其為本案第四較佳實施例另一研磨設 備60的示意圖。在另一較佳實施例中，研磨設備6〇包含鎮空 圓形載& 603、以及上磨盤607。鑽石磨粒6〇6可利用電鑄或 樹脂黏著之方式固定於上磨盤6〇7，研磨時將藍寶石基板辦 13 201235518 固定於鏤空圓形載盤上603，並利用研磨液608冷卻及潤滑 藍寶石基板504、上磨盤607、以及鑽石磨粒606。 請參閱第八圖，其為本案第五較佳實施例拋光設備70的 示意圖。研磨完後的藍寶石基板之表面仍有細微的研磨痕 跡，因此需要進行拋光製程。拋光設備70包含上拋光盤701、 下拋光盤704、以及拋光載盤703。首先，將研磨完後的藍寶 石基板702置於拋光載盤703上’其中拋光載盤7〇3可為陶究 盤或是玻璃纖維盤。然後將拋光載盤703黏貼或固定於上拋光 盤701上，同時將拋光漿(液）705注入於研磨完後的藍寶石基 板702以及下拋光盤704之間。將上拋光盤701緩慢下壓並同 時旋轉上拋光盤701以及下拋光盤704。 单面抛光完後需將藍寶石基板702翻轉至另一面重複上 述拋光的步驟。經由拋光液706對該第一表面7〇21與該第二 表面7022拋光，而分別形成一第三表面8〇51與一第四表面 8〇52後。如第九圖所示，該第三表面80^與該第四表面8〇52 皆具有一平面度與一粗糙度，且在該第三表面8〇51與該第四 表面8052之間具有一厚度變化量(丁〇加Variati(^ ττν)以及-彎錄。該平面度可㈣在每射g〜2Q微米的範 圍，該粗縫度可控制在0·2〜10奈米的範圍，該厚度變化量可 控制在每射G〜15微米的範U ’且該f 可控制在_3〇—3〇 微米的範圍。 請參閱第九圖，其為本案第六較佳實施例外形切割的示意 圖。經過研磨以及拋光後的藍寶石基板8〇5可依照一特定形狀 以-機械程序或-化學程序來進行切割，其中該機械程序包括 14 201235518 以一切割輪8G6、—高速電腦數值控制機804、―雷射8〇2、 或-鑽石刀_切割該藍寶石基板8〇5，該化學巷:、二 化學樂劑8〇3蝕刻該藍寳石基板8〇5。 請參閱第十圖，其為本案第七較佳實施例外 及抛光後的藍寶石基板8〇5經過依照軸 孩、有織狀邊緣的-第五表面9〇3 t在藍寶石 仍 的厚度方向上形成。因此在第十圖中，利用一鑽石磨^901來 :磨該第五表面903可以消除鑛齒狀邊緣。在—較佳實施例 中’讚石磨輪9〇1的形狀為T—type磨輪。在另—較佳實施 鑽石磨輪901可依照產品f求而更換a 及平 頭磨輪。同時於此餘中’鑽石磨輪9G1 _作的行程為由爺 ,知數位仿型控制所配置。利用此仿形控制可對藍寶石基板娜 在厚度方向上的外舰仿形研磨而得各式所f之外形。例如， 進行圓形、方形、多邊形和異形研磨，以及製作各類大小的圓 角或倒角等。接下來，可進行鍍膜或裝飾的製程。 請參閱第十-圖’其為本案藍料製造與加卫方法流程之 示意圖。該方法包含下列步驟：步驟s，藍f石長晶\步 騾撕，提取藍寶石晶棒或晶碑。步螺剛，複線式鎮石切 割。步驟S4G4，研磨及抛光。步驟s，外形切割。步驟⑽6， 外形研磨。铸S4G7，麵以及輯。本錢—較佳實施例 與第二較佳實施例皆包括步驟讓與麵s術，不同處在於 使用不同的設備與方法來製造藍寳石材料避。本案第三較佳 實，包含步驟S4G3。倾讓包含在本錢即及第^ 佳貫施例巾的步驟。本案第六、七較佳實施例分別包括步驟 201235518 S405以及步驟S4〇6。請 行，因為㈣石步驟S407可依序進 β卓现貝、同硬度特性，在步聲讀、步騾⑽5 ^驟S=6之間的雙箭號代表這些步雜的順序可 貫Γ中之一或版二之步驟，亦可以全部都二 二例如’在細03的複線式續石 ： ⑽5之外形研磨，然後進入步術。 4 在完成步驟S404、步驟S4〇5、或步驟_6後，藍舍石 ，板已，，’工可作為透明之監寶石破璃。因此，後續的加工可針對 ，、光學雜錢善’彳物鍍抗反射料。在對雜f石破猶 抗反射層之前’該藍f石麵的穿透率可達到大於或等於 85%。 在^驟S407中’對該監寶石玻璃加工包含功能性錄膜與 裝飾性顧。該功紐鍍膜包括對_寶石_進行一抗反射 ，膜以提升該穿透率至90%以上。該裝飾⑽膜包括：對該 監寶石玻魏行-金屬鍍膜，以在該藍f石補上增加金屬光 澤，或是對該藍寶石玻璃進行一油墨轉印。 在第十一圖中，藍寶石材料209由長晶製程開始。步驟 S401，固液介面形成物2〇4、304以及熔體物203、303冷卻形 成監寳石晶體2〇8，並且藉由晶體測向設備(未顯示)確定藍寶 石晶體208的軸向。步驟S4〇2，自藍寶石晶體208提取藍寶 石材料209 ’其包括圚柱狀晶棒、矩形晶磚、或多邊形晶磚。 步驟S4〇3，藍寶石材料2〇9經複線式鑽石線牝切割成藍寶石 基板504後進行步驟S404的研磨拋光製程。對於研磨拋光完 成後的1賀石基板g〇5進行清洗以及檢查，以避免第三表面 16 201235518 8051以及第四表面8052有任何的坑洞或缺陷而造成硬度或抗 壓強度的下降。完成檢查後須對藍寳石基板8〇5進行應力釋放 的製裎，然後進入步驟S405以及步驟S406。在步驟S405和 步驟S4G6巾’依聽求尺相及外形施賴械辦或化學程 序之製程’以獲得合乎尺寸設計要求之最终產品。絲進入步 戰S407。在步驟S407中，在藍寳石基板8〇5上做抗反射鑛膜 或裝飾等相關製程’最後再根據藍寶石基板咖上的表面狀況 知作退火處理，並由光學檢測以確認藍寶石基板8 〇 $的光學穿 透率符合要求方能應用於其他裝置上，此藍寳石基板8〇5便可 作為藍寳石玻璃。 該藍寶石玻璃可應用於觸控面板，作為觸控面板的覆蓋玻 螭(=_ glass)，其以優異的硬度與抗屡強度來取代強化玻璃。 該藍寳石玻璃亦可應用於取像裝置的鏡頭保護鏡。 貫施例 金1.-種監實石材料的製造方法’包含下列步驟：將一藍 寳石晶種接麵-賴物。向上拉提該tf石晶種來使該溶= 物逐齡卻，並使該熔職在該藍fw_a軸向結晶以形 藍寶石晶體。自該藍寶石晶體在—特定軸向提取該藍寶石 村料’其中補定轴向係垂直於該藍寶石晶種的&轴向。、 “ 2·如實施例i所述的方法，其中轉定轴向的範圍在該 =賈石晶體的e軸向偏a軸向角度·2.5。〜2·5。的範圍，及在該藍 ^石晶體的c軸向偏m軸向角度·2.5。〜2·5。的範圍；或在該= 寶石晶體的a轴向偏c轴向角度_2.5。〜25。的範圍，及在該藍寶 201235518 石晶體的a轴向偏心向角度-2.5。〜2.5。的範圍；或在該藍寶 石晶體的m軸向偏c轴向角度_2.5。〜π的範圍，及在該藍寶 石晶體的m轴向偏a軸向角度·2·5。〜2 5。的範圍；或在該藍寶 石曰Β體的轴白該特疋轴向之米勒指數包括：心狀叫〇〇〇1)、 a-axis( ϊϊ 20;1 2' 1〇;2 π 〇；π ^ 〇; ϊ 2 τ 〇; 2 11〇), m-axis(0 ί 10;1 Ϊ 00;1〇 ϊ 〇;〇1 ϊ 〇; ϊ 1〇〇; ^ 〇1〇)、或 如VIGWU)。_雜包含高純度 二氧化二1§。雜體物置於—_中加熱，綱鍋具有一形 狀，該監寶石晶體的最終形狀依據紐_雜可為圓形、方 形或多邊形。該方法更包含下列步驟：將複數鑽石線環繞於驅 動裝置上’該驅動裝置包含一主槽輪與一續石導輪組。使該驅 動裝置執行-擺動運動以使該複數讀石線產生一張力。利用該 張力對該藍寶石材料切割而形成一藍寶石基板。 3·如貫施例1〜2所述的方法’其中以讀取或切割的方式 來提取該孤貝石材料。该監寶石材料具有—形體，該形體包括 - ^主體、-長方柱體、或—正雜體。使該藍寶石材料具有 一定之切賴距，該切湖距在a65〜185mm的錢。該㈣ ，基板經_概具有-歧，餘G4〜16mm的範;貝。 忒方法更包括下列步驟：經由-研磨物質以上 磨該藍寶石基板的-第-表面與—第一矣而二广刀別研 為鑽石磨粒或研磨液。經由抛光液對該第一表面與該第二表面 拋光，以分別形成-第三表面與一第四表面，其中該第三^面The method for extracting sapphire crystals in the embodiment is the same as that of the intrinsic application of the intrinsic 筮 - - - * 兴 兴 兴 兴 兴 兴 兴 兴 兴 兴 兴 兴 兴 兴 兴 兴 兴 兴 兴 术 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五A schematic diagram of a method for fabricating a sapphire material in accordance with a second preferred embodiment of the present invention. The method comprises the following steps: step reading, injecting a sapphire seed crystal 305 into a solution 303. The procedure is performed to heat the glare. The object 303 is gradually cooled, and the glaze 303 is crystallized in the a-axis of the sapphire crystal 305 to form a sapphire crystal 2〇8. The step s3〇3, from the gemstone crystal 208 in a specific axial direction Extracting the sapphire material 2〇9, wherein the specific axial direction is perpendicular to the a-axis of the sapphire crystal 3〇5. The crystal axial direction of the sapphire material 209 is preferably c_axial (〇〇〇1), A_axial [including (ήιο), (ιΰο), (2ΪΪ0), (Π20), ($110), and (ί2ϊ〇)], m_ axis [including (ioio), (iioo), (oiio), (ιοϊο), (such as 0), and ("knife, and r-axis [including (ιοίι), (Μ), (oiii), (οϊιι), (涵), and One of the 'after extracting the sapphire material 209' is followed by a step of processing. The steps of the processing include: profile grinding, wire cutting, grinding and polishing, profile cutting, chamfering, coating, and decoration. Please refer to the sixth figure (a) and the sixth figure (b), which are schematic views of the wire cutting processing device 40 of the third preferred embodiment of the present invention. The wire cutting processing device 40 includes a driving device 42 and the driving device 42 includes a main slot. The wheel 44 and a diamond guide wheel set 46. The plurality of diamond lines 48 are wrapped around the driving device 40, and the spacing 12 between the plurality of diamond lines 48 is 201235518 in the range of 0·65~L85_, so a cutting distance of the sapphire material is The range of 0.65.85 legs. When cutting the sapphire material, the sapphire material 209 is applied with a force F, and the drive split 42 performs a swinging exercise to bribe the plurality of township lines to generate a force τ. The tension τ and the movement of the diamond wire cut the sapphire material 2〇9 to form a sapphire substrate 5〇4. After cutting, the thickness of the sapphire substrate 5〇4 is in the range of Μ~i 0 mm. «ή第Seven® (a) It is the illustration of the grinding apparatus of the fourth preferred embodiment of the present invention. The grinding apparatus 50 comprises an upper grinding disc 5〇1, a lower grinding disc 5〇5, and a hollow circular carrier 5〇3. The sapphire substrate 5〇4 will have a cutting mark on the cut-surface-surface 5041 and the second surface 5〇42, so that grinding and thinning processing is required. First, the sapphire substrate SO* is placed in the hollow _ The disk 503 is fixed and polished by the rotation of the upper grinding disk 5〇1 and the lower grinding disk 5〇5. The inner and outer edges of the hollow circular carrier 5〇3 have gears 5031 and are combined with the gears 5〇11 of the inner edge of the upper grinding disc 5〇1 and the gear nozzles of the outer edge of the lower grinding disc 505 by the upper grinding disc 5〇1 The edge of the rim and the gear of the outer edge of the lower grinding disc 505 are sprayed to drive the hollow circular carrier 5〇3; at this time, the T main abrasive substance 502, the upper grinding disc and the lower grinding disc 5Q5 respectively grind the gilt gilt substrate The first surface 5〇41 of the 504 and the second surface 5042, wherein the abrasive substance 502 is a diamond abrasive grain. Figure 7 (b) is a schematic view of another abrasive apparatus 60 of the fourth preferred embodiment of the present invention. In another preferred embodiment, the grinding apparatus 6A includes an airborne circular load & 603, and an upper grinding disc 607. The diamond abrasive grain 6〇6 can be fixed to the upper grinding disc 6〇7 by electroforming or resin bonding. When grinding, the sapphire substrate 13 201235518 is fixed on the hollow circular carrier 603, and the polishing liquid 608 is used to cool and lubricate the sapphire. Substrate 504, upper grinding disc 607, and diamond abrasive particles 606. Please refer to the eighth drawing, which is a schematic view of the polishing apparatus 70 of the fifth preferred embodiment of the present invention. The surface of the finished sapphire substrate still has fine grinding marks, so a polishing process is required. The polishing apparatus 70 includes an upper polishing disk 701, a lower polishing disk 704, and a polishing carrier disk 703. First, the ground sapphire substrate 702 is placed on the polishing carrier 703. The polishing carrier 7〇3 may be a ceramic disk or a fiberglass disk. The polishing carrier 703 is then adhered or fixed to the upper polishing pad 701 while a polishing slurry (liquid) 705 is injected between the ground sapphire substrate 702 and the lower polishing pad 704. The upper polishing disk 701 is slowly pressed down and the upper polishing disk 701 and the lower polishing disk 704 are simultaneously rotated. After the single-side polishing is completed, the sapphire substrate 702 is turned over to the other side to repeat the above-described polishing step. The first surface 7〇21 and the second surface 7022 are polished by the polishing liquid 706 to form a third surface 8〇51 and a fourth surface 8〇52, respectively. As shown in the ninth figure, the third surface 80^ and the fourth surface 8〇52 both have a flatness and a roughness, and have a gap between the third surface 8〇51 and the fourth surface 8052. The amount of thickness variation (Dings plus Variati (^ ττν) and - bending. The flatness can be (4) in the range of g~2Q micrometers per shot, and the roughness can be controlled in the range of 0·2~10 nm. The amount of thickness variation can be controlled in the range of G~15 μm per shot and the f can be controlled in the range of _3〇-3〇 microns. Please refer to the ninth figure, which is the shape cutting of the sixth preferred embodiment of the present invention. Schematic. The ground and polished sapphire substrate 8〇5 can be cut according to a specific shape by a mechanical program or a chemical process, wherein the mechanical program includes 14 201235518 with a cutting wheel 8G6, a high speed computer numerical controller 804 , "Road 8 〇 2, or - Diamond knives _ cutting the sapphire substrate 8 〇 5, the chemical lane: 2 chemistry agent 8 〇 3 etching the sapphire substrate 8 〇 5. Please refer to the tenth figure, which is The seventh preferred embodiment of the case is the exception and the polished sapphire substrate 8〇5 passes through the axis, The fifth surface 9〇3 t of the rim is formed in the thickness direction of the sapphire. Therefore, in the tenth figure, a diamond grinding 901 is used: grinding the fifth surface 903 can eliminate the mineral toothed edge. In the preferred embodiment, the shape of the Zanshi grinding wheel 9〇1 is a T-type grinding wheel. In another embodiment, the diamond grinding wheel 901 can be replaced with a flat head grinding wheel according to the product f. At the same time, the 'diamond grinding wheel 9G1 The stroke of _ is configured by the master and the digital profiling control. With this profiling control, the sapphire substrate can be profiled by the outer ship in the thickness direction to obtain various shapes. For example, circular , square, polygonal and profiled grinding, as well as rounding or chamfering of various sizes, etc. Next, the coating or decoration process can be carried out. Please refer to the tenth-figure 'the blue sheet manufacturing and curing method flow The method comprises the following steps: step s, blue f stone crystal growth, step squeaking, extraction of sapphire crystal rod or crystal tablet. Step screw, double-line town stone cutting. Step S4G4, grinding and polishing. Step s, shape cutting Step (10) 6, outside Grinding. Cast S4G7, face and series. Cost—The preferred embodiment and the second preferred embodiment both include steps to make the surface s surgery, the difference is that different equipment and methods are used to manufacture the sapphire material. The third case Preferably, the step S4G3 is included. The step of dumping is included in the cost and the preferred embodiment. The sixth and seventh preferred embodiments of the present invention respectively include steps 201235518 S405 and step S4〇6. Please, because (4) The stone step S407 can be sequentially entered into the β-excellent shell and the same hardness characteristic. The double arrow between the step sound reading and the step (10) 5 ^ S S=6 represents one of the steps of the step or the second version. The steps may also be all two or two, for example, 'in the fine 03 continuous line type of continuous stone: (10) 5 outside the shape grinding, and then into the step. 4 After completing step S404, step S4〇5, or step_6, the blue stone, the board has been, and the work can be used as a transparent gemstone. Therefore, the subsequent processing can be targeted, and the optical miscellaneous materials are anti-reflective materials. The penetration rate of the blue f stone face can be greater than or equal to 85% before the anti-reflective layer is broken. In step S407, the processing of the gemstone glass includes a functional recording film and a decorative film. The work button coating includes an anti-reflection of the _ gemstone to enhance the transmittance to over 90%. The decorative (10) film comprises: a gemstone-metallized film for the gemstone to add a metallic luster to the b-stone, or an ink transfer to the sapphire glass. In the eleventh figure, the sapphire material 209 begins with a long crystal process. In step S401, the solid-liquid interface formations 2〇4, 304 and the melts 203, 303 are cooled to form the gemstone crystals 2〇8, and the axial direction of the sapphire crystal 208 is determined by a crystal direction finding device (not shown). In step S4〇2, the sapphire material 209' is extracted from the sapphire crystal 208, which comprises a columnar ingot, a rectangular crystal tile, or a polygonal crystal brick. In step S4〇3, the sapphire material 2〇9 is cut into the sapphire substrate 504 by the double-line type diamond thread 后, and then the polishing and polishing process of step S404 is performed. The polishing and inspection of the 1 stone substrate g〇5 after the polishing and polishing is performed to prevent the third surface 16 201235518 8051 and the fourth surface 8052 from having any pits or defects to cause a decrease in hardness or compressive strength. After the inspection is completed, the sapphire substrate 8〇5 is subjected to stress relief, and then proceeds to step S405 and step S406. In step S405 and step S4G6, the process of "seeking the ruler and the shape of the device or the chemical process" to obtain the final product meeting the size design requirements. Silk enters step S407. In step S407, an anti-reflective mineral film or decoration process is performed on the sapphire substrate 8〇5, and finally an annealing process is performed according to the surface condition on the sapphire substrate coffee, and optical detection is performed to confirm the sapphire substrate 8 〇 $ The optical transmittance of the sapphire substrate can be applied to other devices, and the sapphire substrate 8〇5 can be used as sapphire glass. The sapphire glass can be applied to a touch panel as a cover glass (=_glass) of a touch panel, which replaces the tempered glass with excellent hardness and resistance. The sapphire glass can also be applied to a lens protector of an image taking device. A method for producing a gold-based seed material includes the following steps: a sapphire seed crystal is bonded to the surface. The tf stone seed crystal is pulled up to make the solution age-old, and the molten metal is crystallized in the axial direction of the blue fw_a to form a sapphire crystal. The sapphire crystal is extracted from the sapphire crystal in a specific axial direction, wherein the complementary axial direction is perpendicular to the & axial direction of the sapphire seed crystal. 2. The method of embodiment i, wherein the range of the determined axial direction is in the range of the e-axis a-axis angle of the = Jiashi crystal · 2.5. ~ 2 · 5, and in the blue ^ The range of the c-axis of the stone crystal is m-axis angle · 2.5. ~ 2 · 5. The range of the axial direction of the gemstone crystal is c-axis angle _2.5. ~ 25. Sapphire 201235518 stone crystal a-axis eccentricity angle -2.5. ~2.5. The range; or the m-axis in the sapphire crystal is c-axis axial angle _2.5. ~ π range, and m in the sapphire crystal The range of the axial a-axis axis angle ·2·5.~2 5; or the axis of the sapphire carcass, the characteristic of the Miller index includes: heart-shaped 〇〇〇1), a -axis( ϊϊ 20;1 2' 1〇;2 π 〇;π ^ 〇; ϊ 2 τ 〇; 2 11〇), m-axis(0 ί 10;1 Ϊ 00;1〇ϊ 〇;〇1 ϊ ϊ; ϊ 1〇〇; ^ 〇1〇), or as VIGWU). _hetery contains high-purity sulphur dioxide 1 §. The hybrid is heated in -_, the pot has a shape, the final of the gemstone crystal The shape can be round, square or polygonal according to the new type. The method is more included Column step: wrapping a plurality of diamond wires around the driving device. The driving device comprises a main sheave and a continuous stone guide wheel set. The driving device performs a swinging motion to generate a force for the plurality of reading stones. The sapphire material is cut to form a sapphire substrate. The method of any of the preceding claims, wherein the orphanite material is extracted by reading or cutting. The gemstone material has a body shape. The shape comprises - ^ body, - rectangular cylinder, or - normal hybrid. The sapphire material has a certain cutting distance, the cutting lake distance is a 65~185mm money. The (4), the substrate has _歧, the remainder of G4~16mm; 贝. The 忒 method further includes the following steps: grinding the sapphire substrate - the first surface and the first 矣 经由 经由 二 二 二 二 二 二 二 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石Polishing the first surface and the second surface via a polishing liquid to form a third surface and a fourth surface, respectively, wherein the third surface
1S 201235518 與該第四表面皆具有一平面度與一粗糙度’在該第三表面與該 第四表面之間具有一厚度變化量以及一彎曲值，該平面声在每 英吋0〜20微米的範圍，該粗糙度在〇·2〜1〇奈米的範圍，該厚 度變化量在每英吋〇〜15微米的範圍，該彎曲值在_3〇〜3〇微米 的对圍。根據一特定形狀以一機械程序或一化學程序切巧兮誌 寶石基板，其中該機械程序包括以一切割輪、一高逮電腦數= 控制機、m鑽石刀切龍藍寶石基板，該化學程序 包括以一化學藥劑蝕刻該藍寳石基板。研磨該藍寳石基板之— 第五表面以使該藍寶石基板的外型形成圓角或倒角，以形成一 藍寶石玻璃’其巾該第五表面係位_1¥石基板之厚度方向 屯如實施例1〜3所述的方法，其中該藍寶石玻 穿透該穿透率大於或等於85%。該方法更包括下列步輝： 對該藍寶石玻璃進行-功能性鑛膜或一展飾性鐘膜。該功能性 鑛膜包括_藍寶石_進行-抗反射_，以提升該穿透率 至90%以上。該裳飾性賴包括：對該藍寶石玻璃進行一 邮雜餐物。石玻璃進 ‘種=石Γ的製造方法，包含下列步驟:將-藍 二 監實石晶體。自該藍寳石晶體在 “例5所述的方法，其中_定轴向的範圍在該 19 .201235518 — 藍f石晶_ e㈣偏a麵角度·2.5。〜2.5。秘S，及在該择 • f石晶體的C轴向偏m轴向角度_2.5。〜2.5。的範圍；或在該^ 寶石晶體的a軸向偏4向角度_25。〜25。的範圍，及在該藍寶 石晶體的a軸向偏m軸向驗2 5。〜2 5。的紙或在該藍寶 石晶體的m軸向偏e軸向角度·2 5。〜2·5。的翻，及在該藍寶 石晶體的m軸向偏a軸向角度_2 5。〜2 5。的紙或在該藍寶 石晶體^軸向。該特定轴向之米勒指數包括：c她卿）、 a-axiS( ^20;1 M0;2 Η 〇;11 2一 〇; ϊ 2 Γ 2 ιι〇)、 m-axif 1〇;1 ϊ 〇〇;1〇 王 〇;〇1 5 〇; ^ 玉 _ ㈣駒娜叫邮加納…魏體物包含高純度 二氧L該、辟物置於—_中加熱，該義具有一形 狀，該監f 4_最_驗___狀可為圓形、方 =邊$财社&含下财驟：將概鮮線環繞於驅 ^^，鄭_裳置包含—主槽輪與1石導輪組。使該驅 執:-擺_動以使該複數鑽石線產生一張力。利用該 張力對該石材料切割而形成—藍寳石基板。 〜6所述的方法，其中以續取或切割方式來 鬥紅石才料。該監寶石材料具有—形體，該形體包括一 切宝m、—長方體、或—正方體。該藍寶石材料具有一鎮石線 =咖’該切觸距在购.85咖的範圍。該藍寶石基板 具有一厚該厚度在0.4〜1.6圓的範圍。 姑由-:ί:: 5〜7所述的方法，該方法更包括下列步驟: 以上下研磨盤分別研磨該藍寶石基板的-第 、、-第-表面’其中該研磨物質為鑽石磨粒缺磨液。 20 201235518 經第一表面與該第二表面拋光，以分別形成-第 ，其中該第三表面與該第四表面皆且有: 平面度與-粗糙度，在該第三表面與該第 ^有^ 度變化量以及-彎曲值。該平面度在每英时0〜20^2 圍。該粗糙度在α㈣奈糊麵。該厚度乾 0〜15微米的範圍。該彎曲值在抓3〇微米的範圍。里母央时 9一如實施例5〜8所述的方法，該方法更包括下列步驟. ^據-特定形狀以—_程序或—化學程序切割料寶石義 Ϊ射=辩包括以=蝴輪、—高速f 機、: 、S’石刀切繼监實石基板。該化學程序包括以一化風 =働m轉石基板。财法更包括下列 ^ 板在厚度的方向上具有一第五表面，研磨二t貝石基 寶石基_外娜成圓肢倒肖。 1这監 =如實_5〜9所·方法，射該Mf石基板 '或所述 y麗貝石玻璃’其中該藍寶石玻璃具有一穿透 、牙透率大於或等於85%。該方法更包括：對該藍寶石玻 =仃一功紐鑛膜或一裝飾性顧。該功能性鍍膜包括對該 ^玻离進行—抗反射鍵膜，以提升該穿透率至9G%以上。 ^錦性魏包括：對該藍寶石破璃進行—金屬鍍膜，以在該 ^石麵上增加金屬光澤。對該籃寶石玻魏行—油墨轉 U.種剛玉材料的製造方法，包含下列步驟：提供具有 、車向的剛玉晶體，其中該成長軸向為該剛玉晶體的a 21 .201235518 軸向。自該剛玉晶體在— 緣向包括特定轴向提取調玉材料，其中該特 該剛玉晶體的A執向。麵’遠乂軸向及該C轴向係垂直於 12. 如實施例I〗1S 201235518 and the fourth surface both have a flatness and a roughness 'having a thickness variation and a bending value between the third surface and the fourth surface, the planar sound is 0 to 20 micrometers per inch The range of roughness is in the range of 〇·2~1〇 nanometer, the thickness variation is in the range of ~15 μm per inch, and the bending value is in the range of _3〇~3〇micron. According to a specific shape, the gemstone substrate is cut in a mechanical program or a chemical process, wherein the mechanical program includes a cutting wheel, a high computer count = control machine, and a diamond knife sapphire substrate, the chemical program includes The sapphire substrate is etched with a chemical. Grinding the fifth surface of the sapphire substrate such that the shape of the sapphire substrate is rounded or chamfered to form a sapphire glass, and the fifth surface of the sapphire substrate is oriented in the thickness direction of the substrate. The method of any of examples 1 to 3, wherein the sapphire glass penetrates the transmittance by greater than or equal to 85%. The method further comprises the following steps: performing a functional mineral film or a decorative clock on the sapphire glass. The functional mineral film includes _ sapphire _ carry-anti-reflection _ to increase the penetration rate to over 90%. The scent of the sapphire includes: a postal meal of the sapphire glass. Stone glass into the ‘species = stone Γ manufacturing method, including the following steps: will - blue two supervised stone crystal. From the sapphire crystal in the method described in Example 5, wherein the _ axial extent is in the 19.201235518 - blue f stone _ e (four) partial a face angle · 2.5. ~ 2.5. Secret S, and in the choice • f-crystals with C-axis axially inclined at an axial angle of _2.5. ~2.5. or a range of angles from the a-axis of the gemstone crystals to a range of _25 to ~25., and in the sapphire crystal The axial direction of the a-axis is 2 to 5. 2 to 2. The paper or the m-axis in the sapphire crystal is offset by an axial angle of -2 5. 2 to 5. The turn of the sapphire crystal m axially a-axial angle _2 5. ~ 2 5. The paper or the sapphire crystal ^ axial. The specific axial Miller index includes: c her Qing), a-axiS ( ^ 20; 1 M0;2 Η 〇;11 2 〇; ϊ 2 Γ 2 ιι〇), m-axif 1〇;1 ϊ 〇〇;1〇王〇;〇1 5 〇; ^玉_ (4) 驹娜叫邮加纳... The Wei body contains high-purity dioxin L, and the filial material is heated in -_, the meaning has a shape, and the supervision f 4_ the most ____ shape can be a circle, a square = edge $财社 & Including the next fiscal: the fresh line is wrapped around the drive ^^, Zheng _ shang contains - the main trough and the 1 stone guide wheel set. The drive: - swings to move the plurality of diamond lines to produce a force. The tension is used to cut the stone material to form a sapphire substrate. The method described in the above 6, wherein the red stone is continuously drawn or cut. The gemstone material has a body shape, which includes all treasures m, a cuboid, or a cube. The sapphire material has a town line = coffee 'the cut distance is in the range of .85 coffee. The sapphire The substrate has a thickness ranging from 0.4 to 1.6. The method described in the following: - ί:: 5 to 7, the method further comprising the steps of: grinding the sapphire substrate by the lower grinding disc, respectively, - a first surface - wherein the abrasive material is a diamond abrasive grain missing liquid. 20 201235518 is polished by the first surface and the second surface to form a - respectively, wherein the third surface and the fourth surface are both: The flatness and the roughness, the amount of change in the third surface and the first degree, and the value of the bend. The flatness is around 0 to 20^2 per inch. The roughness is in the alpha (four) layer. The thickness is dry in the range of 0 to 15 microns. The bending value is in the range of 3 〇 micron. The method described in Embodiments 5 to 8 further includes the following steps. According to the specific shape, the gemstone is cut by the -_ program or - chemical program. Butterfly wheel, high-speed f machine,:, S' stone knife cutting and monitoring stone substrate. The chemical program includes a windshield=働m turn stone substrate. The financial method further includes the following boards in the thickness direction. Five surfaces, grinding two t stone base gem base _ outside Na into a rounded limb inverted Xiao. 1 This supervision = truthful _5 ~ 9 methods, shoot the Mf stone substrate 'or the y Libe stone glass' which The sapphire glass has a penetration and a tooth permeability greater than or equal to 85%. The method further comprises: the sapphire glass = 仃 功 纽 矿 or a decorative film. The functional coating includes an anti-reflection bond film to enhance the transmittance to 9 G% or more. ^King Wei includes: metal coating on the sapphire glass to increase the metallic luster on the stone surface. The method for manufacturing the basket gemstone-ink to U. species corundum material comprises the steps of: providing a corundum crystal having a vehicle direction, wherein the growth axis is an a 21 .201235518 axial direction of the corundum crystal. From the corundum crystal, the jade material is extracted in a specific axial direction, wherein the A is in the direction of the corundum crystal. The face is far from the axial direction and the C axis is perpendicular to 12. as in Example I
寶石晶體或-乡xf；5Q灿方法，其中該剛玉晶體包括-藍 紅寶石材料。該特體’該剛玉材料包括一藍寶石材料或-軸向角度-2.5。〜2 5。的》向的祀圍在該監寶石晶體的c轴向偏a 車由向角度-2.5。〜25j=，或在該藍寶石晶體的c轴向偏m 軸向角度-2.5。〜2.5。^或在該藍寳石晶體的a軸向偏c 轴向角度·2.5。〜25。的3 ’及在該藍寶石晶體的a轴向偏m ㈣角度·心石晶體的瓜轴向偏C 軸向角度-2.5。〜2.5。的範圍.戈在體的m軸向偏a 定轴向之石晶體心轴向。該特 -is(-2〇;1Mo;2 n0;112-〇^/2^^ ' -axis(0 I 10;l ! 〇〇;1〇 , 〇;〇1 , 〇； r i〇〇； ；〇 110) ' 咖_;1卿叫邮娜u)。該方法更包^下= 驟.將複數鎮石線環繞於驅動裝置上，該驢_置包含一錄 輪與一鑽石導輪組。使該驅動裝置執行— 曰Gem crystal or - township xf; 5Q method, wherein the corundum crystal comprises - blue ruby material. The body 'the corundum material comprises a sapphire material or - an axial angle of -2.5. ~2 5. The direction of the cymbal in the c-axis of the gemstone crystal is a-direction from the angle of -2.5. ~25j=, or the c-axis of the sapphire crystal is offset by an axial angle of -2.5. ~2.5. ^ Or in the axial direction of the sapphire crystal, c axial angle · 2.5. ~25. The 3' and the a-axis of the sapphire crystal are offset by m (four) angles. The axis of the heart-shaped crystal is axially inclined at an axial angle of -2.5. ~2.5. The range of the core is in the axial direction of the body. The special -is(-2〇;1Mo;2 n0;112-〇^/2^^ ' -axis(0 I 10;l ! 〇〇;1〇, 〇;〇1, 〇; ri〇〇; ; 〇110) 'Caf _; 1 Qing called Maila u). The method further includes a step of surrounding the plurality of townships on the driving device, the 驴_ set including a record wheel and a diamond guide wheel set. Make the drive perform - 曰
一張力。利用該張力對該藍寶:CA tension. Use this tension to the sapphire: C
J 13. -麵玉材料，包含一剛玉晶體，該剛玉晶體具 成長軸向，且自該剛玉晶體在-特定轴向提取該剛玉材料，盆 中該成長轴向係該剛玉晶體的a輪向。 〃 K -種取雜置之藍f石材―製造方法，包含下列步 22 201235518 驟.長晶。提取。線切。雙拋。毛胚製作、以及鍍膜。 15·如實施例14所述的方法’其中該藍寶石材料係較佳 在其a軸向長晶，該藍寶石材料的軸向包含c-轴向(〇〇〇1)、心 轴向[包括(_、⑽）、（池）、（ii2〇)、（如〇)、以及⑽)]、 m•軸向[包括(ϊ_)、⑽）、_)、⑽）、⑽◦)、以及⑽〇)]、 和 Γ_轴向[包括(1011)、⑽）、（oiii)、_)、_) 、以及(ίιοι)] 的其中之一。 如貫施例 的轴向係在與該藍寶石材料的a轴向垂直之軸向， 认私17·如貝施例14〜16所述的方法，其中提取該藍寶石材料 的較佳角度在其c轴向偏向其a軸向_Z5。或2 5。。 脉!!·，如實施例14〜17所述的方法，其中提取該藍寶石材料 父 度在其C軸向偏向其m軸向-2·5〇或2 5〇。 说如實施例14〜16所述的方 的較佳角餘㈣向爾舞…石材料 材料啦，㈣該藍寶石 “轴向偏向其m軸向-2.5。或2.5。。 的#！T例14〜10所述的方法，射提取該藍寶石㈣ 的較佳角度在其叫向偏向其•向奸或2 5。。貝材抖 22.如實施例14〜16及21戶斤t 〆 材料的較佳#在I 麵方法，其中提取該藍寶石 23如=其"峨向其a—。或⑽。 .如只％例U〜l6所述的方法， 的較佳角度為R軸。 ”中楗取5玄監寶石材料 24.如實施例14〜23 斤的方法，其中該藍f石材料具有 201235518 早晶之晶體結構。 25.如實施例14〜23所城的方法甘 〜d所述的方法’其中錢膜包括使墨轉 P、物理風相冰積、雷射雕刻、絲綢印刷、或喷塗。 26· -種藍寳石材料的製造方法被提出，包^下列步驟： ^供具有—成長軸向的—藍寳石晶體，其中該成長軸向係該誌 虞石晶體的&軸向。自該藍寳石晶體在—特定轴向提取該藍; 石材料，其中雜定㈣健直於該藍寶石晶體的&轴向。 且右—種I寳石材料’包含—藍寶石晶體，該1寳石晶體 “、成長轴向’且自4藍寶石晶體在—特定轴向提取該藍寶 石材料’其愤成長轴向係雜f石晶體的a軸向。 综上所述’本發明的說明與實施例已揭露於上，然其非用 =限制本剌’凡習知此技藝者，在不聰本發明的精神與範 下’备可做各種更動與修飾，其仍應屬在本發明專利的涵 盍範圍之内。 【圖式簡單說明】 ，一圖：玻璃加工製程的示意圖； 第一圖(a):本案第一較佳實施例凱式長晶設備的示意圖； 苐一圖(b):本案藍寶石晶體的示意圖； 给一 一二圖：本案第一較佳實施例藍寳石材料製造方法的示意圖； 第四圖.本案第二較佳實施例熱交換設備的示意圖； 〜五圖：本案第二較佳實施例藍寶石材料製造方法的示意圖； 圖(a).本案第三較佳實施例線切加工設備的示意圖； 圖(b):本案第三較佳實施例線切加工設備的示意圖； 第七圖(a) ·本案第四較佳實施例研磨設備的示意圖； 24 201235518 第七圖(b):本案第四較佳實施例另一研磨設備的示意圖； 第八圖.本案第五較佳實施例拋光設備的示意圖； 第九圖：本案第六較佳實施例外形切割的示意圖； 第十圖：本案第七較佳實施例外形研磨的示意圖；以及 第十一圖：本案藍寶石製造與加工方法流程之示意圖。 【主要元件符號說明】 20: Ijl式長晶設備 201,301:電阻加熱器 203, 303:熔體物 2〇5,3〇5··藍寶石晶種 207, 307:隔熱屏 2〇8:藍寶石晶體 308:熱交換管 42:驅動裝置 46:鑽石導輪組 5〇4:線切割後的藍寳石基板 8〇5:拋光後的藍寶石基板 501,607:上研磨盤 503, 603:鏤空圓形載盤 606:鐵石磨粒 70:拋光設備 703:拋光載盤 5041,7021:第一表面 8051:第三表面 30:熱交換設備 202, 302:坩鍋 204,304:固液介面形成物 206:電流銅環 306:電流線圈 2〇9:藍寶石材料 40:線切加工設備 44:主槽輪 48··複數鑽石線 7〇2:研磨後的藍寶石基板 50,60:研磨設備 505:下研磨盤 502:研磨物質 608:研磨液 701:上拋光盤 704:下拋光盤 5042, 7022:第二表面 8052:第四表面 201235518 903:第五表面 801:鑽石刀 802:雷射 803:化學藥劑 804:高速電腦數值控制機 806:切割輪 901:鑽石磨輪 26J 13. - a jade material comprising a corundum crystal having a growth axis, and extracting the corundum material from the corundum crystal in a specific axial direction, wherein the growth axis is a direction of the corundum crystal . 〃 K - a kind of miscellaneous blue f stone - manufacturing method, including the following steps 22 201235518. extract. Line cut. Double throw. Hair blank making, and coating. 15. The method of embodiment 14 wherein the sapphire material is preferably crystallized in its a-axis, the axial direction of the sapphire material comprising c-axis (〇〇〇1), axial axis [including ( _, (10)), (pool), (ii2〇), (such as 〇), and (10))], m•axial [including (ϊ_), (10)), _), (10)), (10) ◦), and (10) 〇 )], and Γ_Axis [including (1011), (10)), (oiii), _), _), and (ίιοι)]. The axial direction of the embodiment is in the axial direction perpendicular to the a-axis of the sapphire material, and the method described in the examples 14 to 16, wherein the preferred angle of the sapphire material is extracted in the c The axial direction is biased to its a-axis _Z5. Or 2 5. . The method of any of embodiments 14 to 17, wherein the sapphire material is extracted in a C-axis direction of its m-axis -2·5 〇 or 25 〇. Let's say that the preferred corners of the squares described in Examples 14 to 16 are (four) Xianger dance... stone material, (iv) the sapphire "axially biased toward its m-axis -2.5. or 2.5.. #!T Example 14 The method described in ~10, the extraction of the sapphire (4) is preferred at the angle of its orientation to be biased towards it or to the traitor or 25. The material is shaken 22. As in the examples 14 to 16 and 21 jin t t 〆 material佳# In the I face method, which extracts the sapphire 23 such as = its " 峨 to its a-. or (10). For example, only the method described in %Example U~l6, the preferred angle is the R-axis. Take 5 Xuanjian gem material 24. The method of Example 14~23 kg, wherein the blue f stone material has a crystal structure of 201235518 early crystal. 25. The method of any of embodiments 14 to 23 wherein the money film comprises ink transfer P, physical wind phase ice accumulation, laser engraving, silk printing, or spray coating. 26. A method of making a sapphire material is proposed, comprising the steps of: - providing a sapphire crystal having a growth axis, wherein the growth axis is the & axial direction of the chert crystal. The blue sapphire crystal is extracted in a specific axial direction; the stone material, wherein the miscellaneous (four) is straightened to the & axial direction of the sapphire crystal. And the right-type I gem material' contains - sapphire crystal, the 1 gem crystal "grows the axial direction" and extracts the sapphire material from the specific axial direction of the 4 sapphire crystals. In the above description, the description and the embodiments of the present invention have been disclosed above, but the use of the invention is not limited to the limitations of the present invention, and those skilled in the art can be made in the spirit and scope of the invention. Various changes and modifications, which should still fall within the scope of the patent of the present invention. [Simplified description of the drawings], a picture: schematic diagram of a glass processing process; first figure (a): the first preferred embodiment of the present invention Schematic diagram of the Kay-type long crystal device; Figure 1 (b): Schematic diagram of the sapphire crystal in this case; Figure 12: Schematic diagram of the manufacturing method of the sapphire material of the first preferred embodiment of the present invention; Fourth figure. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 is a schematic view showing a manufacturing method of a sapphire material according to a second preferred embodiment of the present invention; FIG. (a) is a schematic view showing a wire cutting processing apparatus according to a third preferred embodiment of the present invention; : The third preferred embodiment of the present invention is line cut plus 7(a) is a schematic view of a polishing apparatus according to a fourth preferred embodiment of the present invention; 24 201235518 seventh diagram (b): a schematic view of another polishing apparatus according to a fourth preferred embodiment of the present invention; A schematic view of a polishing apparatus of a fifth preferred embodiment of the present invention; a ninth drawing: a schematic view of the shape cutting of the sixth preferred embodiment of the present invention; a tenth drawing: a schematic view of the shape grinding of the seventh preferred embodiment of the present invention; and an eleventh drawing: Schematic diagram of the process of manufacturing and processing sapphire in this case. [Key element symbol description] 20: Ijl type crystal growth apparatus 201, 301: electric resistance heater 203, 303: melt 2〇5, 3〇5·· sapphire seed crystal 207, 307 : Heat shield 2〇8: Sapphire crystal 308: Heat exchange tube 42: Drive unit 46: Diamond guide wheel set 5〇4: Wire-cut sapphire substrate 8〇5: Polished sapphire substrate 501, 607: Upper grinding disc 503, 603: hollow circular carrier 606: iron abrasive grain 70: polishing device 703: polishing carrier 5041, 7021: first surface 8051: third surface 30: heat exchange device 202, 302: crucible 204, 304: solid liquid Interface formation 206: current copper ring 306: current coil 2〇9: blue Stone material 40: Wire cutting processing equipment 44: Main sheave 48··Multiple diamond wire 7〇2: Grinded sapphire substrate 50, 60: Grinding device 505: Lower grinding disc 502: Abrasive substance 608: Grinding liquid 701: Upper Polishing disc 704: lower polishing disc 5042, 7022: second surface 8052: fourth surface 201235518 903: fifth surface 801: diamond knife 802: laser 803: chemical 804: high speed computer numerical controller 806: cutting wheel 901: Diamond grinding wheel 26