JP6142209B2 - 大型サファイア基板 - Google Patents
大型サファイア基板 Download PDFInfo
- Publication number
- JP6142209B2 JP6142209B2 JP2016560036A JP2016560036A JP6142209B2 JP 6142209 B2 JP6142209 B2 JP 6142209B2 JP 2016560036 A JP2016560036 A JP 2016560036A JP 2016560036 A JP2016560036 A JP 2016560036A JP 6142209 B2 JP6142209 B2 JP 6142209B2
- Authority
- JP
- Japan
- Prior art keywords
- sapphire
- ribbon
- crystal orientation
- crystal
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052594 sapphire Inorganic materials 0.000 title claims description 64
- 239000010980 sapphire Substances 0.000 title claims description 64
- 239000000758 substrate Substances 0.000 title description 16
- 239000013078 crystal Substances 0.000 claims description 69
- 238000005259 measurement Methods 0.000 description 13
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000000691 measurement method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
2 シード基板
3 サファイアリボン
c C面結晶方位
r R面結晶方位
s サファイアリボンの表面方向
Claims (2)
- 結晶引き上げ後の最も広い端面について、表面に対するC面又はR面結晶方位のうねりによるズレが全て2°以内である、幅6インチ以上の単結晶サファイアリボン。
- 結晶引き上げ後の最も広い端面について、表面に対するC面又はR面結晶方位のうねりによるズレが全て2°以内である、幅6インチ以上の単結晶マルチサファイアリボン。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015124393 | 2015-06-22 | ||
JP2015124393 | 2015-06-22 | ||
PCT/JP2016/068446 WO2016208603A1 (ja) | 2015-06-22 | 2016-06-22 | 大型サファイア基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6142209B2 true JP6142209B2 (ja) | 2017-06-07 |
JPWO2016208603A1 JPWO2016208603A1 (ja) | 2017-06-29 |
Family
ID=57586502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016560036A Active JP6142209B2 (ja) | 2015-06-22 | 2016-06-22 | 大型サファイア基板 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6142209B2 (ja) |
WO (1) | WO2016208603A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003327495A (ja) * | 2002-05-14 | 2003-11-19 | Namiki Precision Jewel Co Ltd | 晶癖面サファイヤ板材及びその製造方法 |
JP2010504274A (ja) * | 2006-09-22 | 2010-02-12 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | C−面サファイアに関する方法及び装置 |
JP2011504451A (ja) * | 2007-11-21 | 2011-02-10 | サンゴバン・セラミックス・アンド・プラスティックス・インコーポレイティッド | r平面サファイアの方法および装置 |
JP2015120612A (ja) * | 2013-12-23 | 2015-07-02 | 並木精密宝石株式会社 | 大型サファイアマルチ基板 |
JP2015124096A (ja) * | 2013-12-25 | 2015-07-06 | 並木精密宝石株式会社 | 大型基板用の単結晶サファイアリボン |
-
2016
- 2016-06-22 JP JP2016560036A patent/JP6142209B2/ja active Active
- 2016-06-22 WO PCT/JP2016/068446 patent/WO2016208603A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003327495A (ja) * | 2002-05-14 | 2003-11-19 | Namiki Precision Jewel Co Ltd | 晶癖面サファイヤ板材及びその製造方法 |
JP2010504274A (ja) * | 2006-09-22 | 2010-02-12 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | C−面サファイアに関する方法及び装置 |
JP2011504451A (ja) * | 2007-11-21 | 2011-02-10 | サンゴバン・セラミックス・アンド・プラスティックス・インコーポレイティッド | r平面サファイアの方法および装置 |
JP2015120612A (ja) * | 2013-12-23 | 2015-07-02 | 並木精密宝石株式会社 | 大型サファイアマルチ基板 |
JP2015124096A (ja) * | 2013-12-25 | 2015-07-06 | 並木精密宝石株式会社 | 大型基板用の単結晶サファイアリボン |
Also Published As
Publication number | Publication date |
---|---|
JPWO2016208603A1 (ja) | 2017-06-29 |
WO2016208603A1 (ja) | 2016-12-29 |
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