ATE500358T1 - Verfahren zur herstellung einer epitaktischen schicht aus gallium nitrid - Google Patents
Verfahren zur herstellung einer epitaktischen schicht aus gallium nitridInfo
- Publication number
- ATE500358T1 ATE500358T1 AT03005910T AT03005910T ATE500358T1 AT E500358 T1 ATE500358 T1 AT E500358T1 AT 03005910 T AT03005910 T AT 03005910T AT 03005910 T AT03005910 T AT 03005910T AT E500358 T1 ATE500358 T1 AT E500358T1
- Authority
- AT
- Austria
- Prior art keywords
- gallium nitride
- nitride layer
- layer
- producing
- epitaxial gallium
- Prior art date
Links
- 229910002601 GaN Inorganic materials 0.000 title abstract 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000151 deposition Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910010092 LiAlO2 Inorganic materials 0.000 abstract 1
- 229910020776 SixNy Inorganic materials 0.000 abstract 1
- 238000004581 coalescence Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9713096A FR2769924B1 (fr) | 1997-10-20 | 1997-10-20 | Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE500358T1 true ATE500358T1 (de) | 2011-03-15 |
Family
ID=9512414
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03005910T ATE500358T1 (de) | 1997-10-20 | 1998-10-15 | Verfahren zur herstellung einer epitaktischen schicht aus gallium nitrid |
AT98950142T ATE303462T1 (de) | 1997-10-20 | 1998-10-15 | Epitaktische galliumnitridschicht |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT98950142T ATE303462T1 (de) | 1997-10-20 | 1998-10-15 | Epitaktische galliumnitridschicht |
Country Status (14)
Country | Link |
---|---|
US (2) | US6325850B1 (de) |
EP (2) | EP1034325B9 (de) |
JP (1) | JP4282896B2 (de) |
KR (1) | KR100626625B1 (de) |
CN (2) | CN1267587C (de) |
AT (2) | ATE500358T1 (de) |
AU (1) | AU9632498A (de) |
DE (2) | DE69842158D1 (de) |
ES (1) | ES2369467T3 (de) |
FR (1) | FR2769924B1 (de) |
HK (1) | HK1075131A1 (de) |
PT (1) | PT1338683E (de) |
SG (1) | SG103342A1 (de) |
WO (1) | WO1999020816A1 (de) |
Families Citing this family (134)
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FR2769924B1 (fr) * | 1997-10-20 | 2000-03-10 | Centre Nat Rech Scient | Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche |
US6051849A (en) | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
US6844574B1 (en) * | 1999-03-12 | 2005-01-18 | Sumitomo Chemical Company, Limited | III-V compound semiconductor |
JP3786544B2 (ja) * | 1999-06-10 | 2006-06-14 | パイオニア株式会社 | 窒化物半導体素子の製造方法及びかかる方法により製造された素子 |
JP4145437B2 (ja) * | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶GaNの結晶成長方法及び単結晶GaN基板の製造方法と単結晶GaN基板 |
US6821805B1 (en) * | 1999-10-06 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device, semiconductor substrate, and manufacture method |
JP3438674B2 (ja) * | 1999-10-21 | 2003-08-18 | 松下電器産業株式会社 | 窒化物半導体素子の製造方法 |
US6521514B1 (en) * | 1999-11-17 | 2003-02-18 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
US6475882B1 (en) * | 1999-12-20 | 2002-11-05 | Nitride Semiconductors Co., Ltd. | Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device |
US6403451B1 (en) * | 2000-02-09 | 2002-06-11 | Noerh Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts |
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AU9632498A (en) | 1999-05-10 |
EP1338683B1 (de) | 2011-03-02 |
DE69831419T2 (de) | 2006-06-08 |
EP1034325B9 (de) | 2006-01-04 |
EP1338683A3 (de) | 2008-05-28 |
PT1338683E (pt) | 2011-07-04 |
US6802902B2 (en) | 2004-10-12 |
US20020152952A1 (en) | 2002-10-24 |
ATE303462T1 (de) | 2005-09-15 |
CN1279733A (zh) | 2001-01-10 |
CN1267587C (zh) | 2006-08-02 |
FR2769924A1 (fr) | 1999-04-23 |
DE69842158D1 (de) | 2011-04-14 |
FR2769924B1 (fr) | 2000-03-10 |
US6325850B1 (en) | 2001-12-04 |
WO1999020816A1 (fr) | 1999-04-29 |
HK1075131A1 (en) | 2005-12-02 |
DE69831419D1 (de) | 2005-10-06 |
ES2369467T3 (es) | 2011-12-01 |
SG103342A1 (en) | 2004-04-29 |
JP4282896B2 (ja) | 2009-06-24 |
KR100626625B1 (ko) | 2006-09-22 |
EP1034325A1 (de) | 2000-09-13 |
EP1338683A2 (de) | 2003-08-27 |
JP2001520169A (ja) | 2001-10-30 |
KR20010031225A (ko) | 2001-04-16 |
CN1607641A (zh) | 2005-04-20 |
CN1329954C (zh) | 2007-08-01 |
EP1034325B1 (de) | 2005-08-31 |
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