FR3054734B1 - Diode laser a retroaction repartie - Google Patents

Diode laser a retroaction repartie Download PDF

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Publication number
FR3054734B1
FR3054734B1 FR1657217A FR1657217A FR3054734B1 FR 3054734 B1 FR3054734 B1 FR 3054734B1 FR 1657217 A FR1657217 A FR 1657217A FR 1657217 A FR1657217 A FR 1657217A FR 3054734 B1 FR3054734 B1 FR 3054734B1
Authority
FR
France
Prior art keywords
laser diode
distributed feedback
feedback
distributed
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1657217A
Other languages
English (en)
Other versions
FR3054734A1 (fr
Inventor
Anatole Lupu
Natalia DUBROVINA
Abderrahim Ramdane
Henri Benisty
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Paris Sud Paris 11
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Paris Sud Paris 11
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Paris Sud Paris 11 filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1657217A priority Critical patent/FR3054734B1/fr
Priority to JP2019503952A priority patent/JP7112387B2/ja
Priority to CN201780046711.4A priority patent/CN109643881B/zh
Priority to US16/320,758 priority patent/US10658816B2/en
Priority to PCT/EP2017/069069 priority patent/WO2018019955A1/fr
Publication of FR3054734A1 publication Critical patent/FR3054734A1/fr
Application granted granted Critical
Publication of FR3054734B1 publication Critical patent/FR3054734B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
FR1657217A 2016-07-27 2016-07-27 Diode laser a retroaction repartie Active FR3054734B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1657217A FR3054734B1 (fr) 2016-07-27 2016-07-27 Diode laser a retroaction repartie
JP2019503952A JP7112387B2 (ja) 2016-07-27 2017-07-27 分布帰還型レーザーダイオード
CN201780046711.4A CN109643881B (zh) 2016-07-27 2017-07-27 分布式反馈激光二极管
US16/320,758 US10658816B2 (en) 2016-07-27 2017-07-27 Distributed feedback laser diode
PCT/EP2017/069069 WO2018019955A1 (fr) 2016-07-27 2017-07-27 Diode laser à rétroaction répartie

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1657217 2016-07-27
FR1657217A FR3054734B1 (fr) 2016-07-27 2016-07-27 Diode laser a retroaction repartie

Publications (2)

Publication Number Publication Date
FR3054734A1 FR3054734A1 (fr) 2018-02-02
FR3054734B1 true FR3054734B1 (fr) 2018-09-07

Family

ID=56855742

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1657217A Active FR3054734B1 (fr) 2016-07-27 2016-07-27 Diode laser a retroaction repartie

Country Status (5)

Country Link
US (1) US10658816B2 (fr)
JP (1) JP7112387B2 (fr)
CN (1) CN109643881B (fr)
FR (1) FR3054734B1 (fr)
WO (1) WO2018019955A1 (fr)

Family Cites Families (27)

* Cited by examiner, † Cited by third party
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JPH0319292A (ja) * 1989-06-15 1991-01-28 Mitsubishi Electric Corp 半導体レーザ
US6031243A (en) * 1996-10-16 2000-02-29 Geoff W. Taylor Grating coupled vertical cavity optoelectronic devices
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
JP3450169B2 (ja) * 1997-11-28 2003-09-22 Ｎｅｃエレクトロニクス株式会社 分布帰還型半導体レーザ
JP2001168353A (ja) 1999-09-28 2001-06-22 Toshiba Corp 光素子
US6501783B1 (en) * 2000-02-24 2002-12-31 Lucent Technologies Inc. Distributed feedback surface plasmon laser
EP1283573A3 (fr) * 2001-07-27 2005-02-09 The Furukawa Electric Co., Ltd. Laser semiconducteur à réflecteur de Bragg distribué
US6900920B2 (en) * 2001-09-21 2005-05-31 The Regents Of The University Of California Variable semiconductor all-optical buffer using slow light based on electromagnetically induced transparency
US6970490B2 (en) * 2002-05-10 2005-11-29 The Trustees Of Princeton University Organic light emitting devices based on the formation of an electron-hole plasma
KR20040098421A (ko) * 2003-05-15 2004-11-20 한국전자통신연구원 광대역 파장 가변 추출 격자 분포 궤환 레이저 다이오드
WO2005011076A1 (fr) * 2003-07-31 2005-02-03 Bookham Technology Plc Guide d’ondes nervuré à sélecteurs de mode verticaux à guidage faible
EP1839078A4 (fr) * 2005-01-13 2017-12-13 Oewaves, Inc. Oscillateur optoelectronique a boucles multiples accordable avec filtre radiofrequence ou hyperfrequence accordable base sur le filtrage optique
JP4721924B2 (ja) * 2005-12-09 2011-07-13 富士通株式会社 光導波路を伝搬する光と回折格子とを結合させた光素子
JP4312239B2 (ja) 2007-02-16 2009-08-12 富士通株式会社 光素子及びその製造方法
WO2009055894A1 (fr) 2007-10-31 2009-05-07 Onechip Photonics Inc. Laser à rétroaction répartie et couplage latéral avec rendement amélioré
US7796656B2 (en) * 2007-11-05 2010-09-14 Onechip Photonics Inc. Enhanced efficiency laterally-coupled distributed feedback laser
WO2009116152A1 (fr) * 2008-03-19 2009-09-24 富士通株式会社 Élément optoélectrique et son procédé de fabrication
DE102009019996B4 (de) 2009-05-05 2011-09-15 Nanoplus Gmbh Nanosystems And Technologies DFB Laserdiode mit lateraler Kopplung für große Ausgangsleistungen
JP2010278278A (ja) 2009-05-29 2010-12-09 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
KR101377397B1 (ko) * 2009-10-16 2014-03-25 서울대학교산학협력단 Ⅲ족 질화물 표면 격자 반사체
JP2013165152A (ja) 2012-02-10 2013-08-22 Nippon Telegr & Teleph Corp <Ntt> プラズモン薄膜レーザ
CN102738701A (zh) * 2012-06-25 2012-10-17 中国科学院半导体研究所 分布式反馈激光器及其制备方法
CN102969423A (zh) * 2012-12-10 2013-03-13 党随虎 银耦合增强GaN基发光二极管的器件结构及制备方法
KR20220145922A (ko) * 2012-12-25 2022-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9094133B2 (en) 2013-03-12 2015-07-28 Synergy Microwave Corporation Integrated production of self injection locked self phase loop locked optoelectronic oscillator
CN104466617B (zh) * 2013-09-18 2018-12-25 中国科学院苏州纳米技术与纳米仿生研究所 太赫兹光源芯片、光源器件、光源组件及其制造方法
CN103545711B (zh) * 2013-10-22 2015-12-30 中国科学院半导体研究所 分布反馈式激光器及其制备方法

Also Published As

Publication number Publication date
US20190165545A1 (en) 2019-05-30
JP7112387B2 (ja) 2022-08-03
WO2018019955A1 (fr) 2018-02-01
US10658816B2 (en) 2020-05-19
CN109643881A (zh) 2019-04-16
FR3054734A1 (fr) 2018-02-02
JP2019522379A (ja) 2019-08-08
CN109643881B (zh) 2021-04-23

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