DE112016005129A5 - Halbleiterlaserdiode - Google Patents

Halbleiterlaserdiode Download PDF

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Publication number
DE112016005129A5
DE112016005129A5 DE112016005129.8T DE112016005129T DE112016005129A5 DE 112016005129 A5 DE112016005129 A5 DE 112016005129A5 DE 112016005129 T DE112016005129 T DE 112016005129T DE 112016005129 A5 DE112016005129 A5 DE 112016005129A5
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser diode
diode
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112016005129.8T
Other languages
English (en)
Other versions
DE112016005129B4 (de
Inventor
Alexander Bachmann
Christian Lauer
Michael Furitsch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112016005129A5 publication Critical patent/DE112016005129A5/de
Application granted granted Critical
Publication of DE112016005129B4 publication Critical patent/DE112016005129B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4292—Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
DE112016005129.8T 2015-11-09 2016-11-08 Halbleiterlaserdiode Active DE112016005129B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015119226.8A DE102015119226A1 (de) 2015-11-09 2015-11-09 Halbleiterlaserdiode
DE102015119226.8 2015-11-09
PCT/EP2016/076986 WO2017081010A1 (de) 2015-11-09 2016-11-08 Halbleiterlaserdiode

Publications (2)

Publication Number Publication Date
DE112016005129A5 true DE112016005129A5 (de) 2018-07-26
DE112016005129B4 DE112016005129B4 (de) 2022-05-12

Family

ID=57288393

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102015119226.8A Withdrawn DE102015119226A1 (de) 2015-11-09 2015-11-09 Halbleiterlaserdiode
DE112016005129.8T Active DE112016005129B4 (de) 2015-11-09 2016-11-08 Halbleiterlaserdiode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102015119226.8A Withdrawn DE102015119226A1 (de) 2015-11-09 2015-11-09 Halbleiterlaserdiode

Country Status (5)

Country Link
US (1) US10424898B2 (de)
JP (1) JP6637170B2 (de)
CN (1) CN108604773B (de)
DE (2) DE102015119226A1 (de)
WO (1) WO2017081010A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016110790B4 (de) 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102019103909A1 (de) 2019-02-15 2020-08-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierende Laserdiode und Verfahren für deren Herrstellung
CN111641102B (zh) * 2020-05-20 2022-01-11 深圳瑞波光电子有限公司 半导体激光器、巴条及制作方法
CN112467514B (zh) * 2020-11-10 2022-04-12 华中科技大学 一种宽工作温度范围的分布反馈半导体激光器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4972238A (en) * 1987-12-08 1990-11-20 Kabushiki Kaisha Toshiba Semiconductor laser device
JP3425185B2 (ja) * 1993-03-26 2003-07-07 日本オプネクスト株式会社 半導体素子
US5561680A (en) * 1994-12-20 1996-10-01 Philips Electronics North America Corporation II-VI semiconductor diode laser having a strained layer
WO1997050133A1 (en) * 1996-06-24 1997-12-31 Philips Electronics N.V. Radiation-emitting semiconductor diode, and method of manufacturing such a diode
AU770757B2 (en) * 1999-12-27 2004-03-04 Corning O.T.I. S.P.A. Semiconductor laser element having a diverging region
JP4749582B2 (ja) 2000-03-27 2011-08-17 忠 高野 半導体レーザ装置およびそれを用いた通信システム
JP4090768B2 (ja) * 2002-03-20 2008-05-28 株式会社日立製作所 半導体レーザ素子
JP2004055938A (ja) * 2002-07-23 2004-02-19 Hitachi Ltd 半導体レーザ素子
JP3891108B2 (ja) * 2002-12-06 2007-03-14 日亜化学工業株式会社 窒化物半導体発光素子
US7129640B2 (en) * 2003-06-03 2006-10-31 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Integrated circuit device for driving a laser diode with reduced heat transfer and method for fabricating the device
KR20050110902A (ko) * 2004-05-20 2005-11-24 삼성전기주식회사 반도체 레이저 다이오드
JP4231854B2 (ja) * 2005-03-17 2009-03-04 アンリツ株式会社 半導体レーザ素子及びガス検知装置
JP4682081B2 (ja) * 2006-04-27 2011-05-11 富士通株式会社 光デバイス
DE102006046297A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterlaser
US20080205466A1 (en) * 2007-02-23 2008-08-28 Finisar Corporation Ridge waveguide laser with a compressively strained layer
CN101022206A (zh) * 2007-03-15 2007-08-22 华中科技大学 一种可调谐半导体激光器
DE102008014093B4 (de) * 2007-12-27 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit zumindest einer Strombarriere
CN101246942B (zh) * 2008-03-21 2011-04-27 南开大学 发光二极管和激光器制作方法及发光二极管和激光器
JP2012094564A (ja) * 2010-10-22 2012-05-17 Panasonic Corp 半導体レーザ素子およびその製造方法
DE102011055891B9 (de) * 2011-11-30 2017-09-14 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
CN104332823B (zh) * 2014-11-20 2017-08-11 长春理工大学 一种改善宽条形大功率半导体激光器光束质量的方法

Also Published As

Publication number Publication date
JP6637170B2 (ja) 2020-01-29
CN108604773B (zh) 2021-12-24
US10424898B2 (en) 2019-09-24
WO2017081010A1 (de) 2017-05-18
DE102015119226A1 (de) 2017-05-11
DE102015119226A8 (de) 2017-07-06
US20180331502A1 (en) 2018-11-15
JP2018533222A (ja) 2018-11-08
CN108604773A (zh) 2018-09-28
DE112016005129B4 (de) 2022-05-12

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