DE112017004053A5 - Optoelektronischer Halbleiterchip - Google Patents

Optoelektronischer Halbleiterchip Download PDF

Info

Publication number
DE112017004053A5
DE112017004053A5 DE112017004053.1T DE112017004053T DE112017004053A5 DE 112017004053 A5 DE112017004053 A5 DE 112017004053A5 DE 112017004053 T DE112017004053 T DE 112017004053T DE 112017004053 A5 DE112017004053 A5 DE 112017004053A5
Authority
DE
Germany
Prior art keywords
semiconductor chip
optoelectronic semiconductor
optoelectronic
chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112017004053.1T
Other languages
English (en)
Inventor
Frank Singer
Siegfried Herrmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112017004053A5 publication Critical patent/DE112017004053A5/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
DE112017004053.1T 2016-08-12 2017-08-04 Optoelektronischer Halbleiterchip Pending DE112017004053A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102016114992.6A DE102016114992A1 (de) 2016-08-12 2016-08-12 Optoelektronischer Halbleiterchip
DE102016114992.6 2016-08-12
PCT/EP2017/069828 WO2018029110A1 (de) 2016-08-12 2017-08-04 Optoelektronischer halbleiterchip

Publications (1)

Publication Number Publication Date
DE112017004053A5 true DE112017004053A5 (de) 2019-04-25

Family

ID=59523142

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102016114992.6A Withdrawn DE102016114992A1 (de) 2016-08-12 2016-08-12 Optoelektronischer Halbleiterchip
DE112017004053.1T Pending DE112017004053A5 (de) 2016-08-12 2017-08-04 Optoelektronischer Halbleiterchip

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102016114992.6A Withdrawn DE102016114992A1 (de) 2016-08-12 2016-08-12 Optoelektronischer Halbleiterchip

Country Status (3)

Country Link
US (1) US11038083B2 (de)
DE (2) DE102016114992A1 (de)
WO (1) WO2018029110A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021520651A (ja) * 2018-03-07 2021-08-19 フォトニク・インクベーター・ゲーエムベーハー 電磁波を放射する半導体デバイス及びその製造方法
JP7167330B2 (ja) * 2018-07-12 2022-11-08 江西兆馳半導体有限公司 光取出し効率を向上させるための紫外ｌｅｄチップ及びその製造方法
JP7227463B2 (ja) 2018-12-27 2023-02-22 日亜化学工業株式会社 発光素子及びその製造方法
TWI775306B (zh) * 2021-02-04 2022-08-21 錼創顯示科技股份有限公司 微型發光二極體晶片以及微型發光二極體顯示器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
JP5836122B2 (ja) 2008-07-07 2015-12-24 グロ アーベーＧｌｏ Ａｂ ナノ構造のｌｅｄ
KR20120044545A (ko) 2010-10-28 2012-05-08 삼성엘이디 주식회사 반도체 발광 소자
DE102011056140A1 (de) 2011-12-07 2013-06-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102012101718A1 (de) * 2012-03-01 2013-09-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US20130313514A1 (en) 2012-05-23 2013-11-28 Samsung Electronics Co., Ltd. Semiconductor light emitting device
KR101603207B1 (ko) * 2013-01-29 2016-03-14 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
KR102285786B1 (ko) * 2014-01-20 2021-08-04 삼성전자 주식회사 반도체 발광 소자
KR102075986B1 (ko) * 2014-02-03 2020-02-11 삼성전자주식회사 반도체 발광소자
KR102212557B1 (ko) * 2014-11-03 2021-02-08 삼성전자주식회사 나노구조 반도체 발광소자
DE102014117995A1 (de) * 2014-12-05 2016-06-09 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge zur Erzeugung von sichtbarem Licht und Leuchtdiode

Also Published As

Publication number Publication date
US20200365764A1 (en) 2020-11-19
DE102016114992A1 (de) 2018-02-15
WO2018029110A1 (de) 2018-02-15
US11038083B2 (en) 2021-06-15

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033380000

Ipc: H01L0033080000

R016 Response to examination communication