DE112017003450A5 - Strahlungsemittierender Halbleiterchip - Google Patents

Strahlungsemittierender Halbleiterchip Download PDF

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Publication number
DE112017003450A5
DE112017003450A5 DE112017003450.7T DE112017003450T DE112017003450A5 DE 112017003450 A5 DE112017003450 A5 DE 112017003450A5 DE 112017003450 T DE112017003450 T DE 112017003450T DE 112017003450 A5 DE112017003450 A5 DE 112017003450A5
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DE
Germany
Prior art keywords
radiation
semiconductor chip
emitting semiconductor
emitting
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112017003450.7T
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English (en)
Inventor
Fabian Kopp
Attila Molnar
Björn Muermann
Franz Eberhard
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Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112017003450A5 publication Critical patent/DE112017003450A5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE112017003450.7T 2016-07-08 2017-06-26 Strahlungsemittierender Halbleiterchip Pending DE112017003450A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102016112587.3A DE102016112587A1 (de) 2016-07-08 2016-07-08 Strahlungsemittierender Halbleiterchip
DE102016112587.3 2016-07-08
PCT/EP2017/065715 WO2018007186A1 (de) 2016-07-08 2017-06-26 Strahlungsemittierender halbleiterchip

Publications (1)

Publication Number Publication Date
DE112017003450A5 true DE112017003450A5 (de) 2019-03-28

Family

ID=59215790

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102016112587.3A Withdrawn DE102016112587A1 (de) 2016-07-08 2016-07-08 Strahlungsemittierender Halbleiterchip
DE112017003450.7T Pending DE112017003450A5 (de) 2016-07-08 2017-06-26 Strahlungsemittierender Halbleiterchip

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102016112587.3A Withdrawn DE102016112587A1 (de) 2016-07-08 2016-07-08 Strahlungsemittierender Halbleiterchip

Country Status (6)

Country Link
US (3) US11164994B2 (de)
JP (1) JP6715962B2 (de)
KR (1) KR102182509B1 (de)
CN (1) CN109478585B (de)
DE (2) DE102016112587A1 (de)
WO (1) WO2018007186A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016112587A1 (de) * 2016-07-08 2018-01-11 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102017117645A1 (de) 2017-08-03 2019-02-07 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102017119881A1 (de) 2017-08-30 2019-02-28 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102017129783A1 (de) 2017-12-13 2019-06-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102018101393A1 (de) * 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
DE102018119438A1 (de) * 2018-08-09 2020-02-13 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip, optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils
DE102018124341B4 (de) * 2018-10-02 2024-05-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit vergrößerter aktiver Zone und Verfahren zur Herstellung
DE102019100799A1 (de) 2019-01-14 2020-07-16 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einem schichtstapel mit anisotroper leitfähigkeit und verfahren zur herstellung des optoelektronischen halbleiterbauelements
DE102019103638A1 (de) * 2019-02-13 2020-08-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement mit abschnitten einer leitfähigen schicht und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
DE102019113119A1 (de) 2019-05-17 2020-11-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102019120444A1 (de) * 2019-07-29 2021-02-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
TWD219684S (zh) * 2021-07-09 2022-07-01 晶元光電股份有限公司 發光二極體之部分

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3693468B2 (ja) * 1997-07-23 2005-09-07 シャープ株式会社 半導体発光素子
EP2290715B1 (de) * 2002-08-01 2019-01-23 Nichia Corporation Lichtemittierendes Halbleiterbauelement, Verfahren zu seiner Herstellung und Lichtemissionsvorrichtung damit
US7274040B2 (en) * 2004-10-06 2007-09-25 Philips Lumileds Lighting Company, Llc Contact and omnidirectional reflective mirror for flip chipped light emitting devices
TWI239670B (en) * 2004-12-29 2005-09-11 Ind Tech Res Inst Package structure of light emitting diode and its manufacture method
KR100631969B1 (ko) * 2005-02-28 2006-10-11 삼성전기주식회사 질화물 반도체 발광소자
KR100833309B1 (ko) * 2006-04-04 2008-05-28 삼성전기주식회사 질화물계 반도체 발광소자
JP5044986B2 (ja) * 2006-05-17 2012-10-10 サンケン電気株式会社 半導体発光装置
CN102779918B (zh) * 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
KR100974923B1 (ko) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US8872204B2 (en) * 2007-11-23 2014-10-28 Epistar Corporation Light-emitting device having a trench in a semiconductor layer
KR100930195B1 (ko) * 2007-12-20 2009-12-07 삼성전기주식회사 전극 패턴을 구비한 질화물 반도체 발광소자
JP5217787B2 (ja) * 2008-08-27 2013-06-19 日亜化学工業株式会社 半導体発光素子
KR101020910B1 (ko) * 2008-12-24 2011-03-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8692280B2 (en) * 2009-11-25 2014-04-08 Epistar Corporation Optoelectronic semiconductor device
KR101625125B1 (ko) * 2009-12-29 2016-05-27 서울바이오시스 주식회사 전극 연장부들을 갖는 발광 다이오드
US10205059B2 (en) * 2010-02-09 2019-02-12 Epistar Corporation Optoelectronic device and the manufacturing method thereof
JP5793292B2 (ja) * 2010-02-17 2015-10-14 豊田合成株式会社 半導体発光素子
JP5494005B2 (ja) * 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
US8772805B2 (en) * 2010-03-31 2014-07-08 Seoul Viosys Co., Ltd. High efficiency light emitting diode and method for fabricating the same
CN102244188A (zh) * 2010-05-13 2011-11-16 展晶科技(深圳)有限公司 发光二极管芯片的电极结构
US8426844B2 (en) * 2010-08-04 2013-04-23 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and display device therewith
TWI433357B (zh) * 2010-08-26 2014-04-01 Huga Optotech Inc 高亮度發光二極體結構
JP5333382B2 (ja) * 2010-08-27 2013-11-06 豊田合成株式会社 発光素子
TW201216517A (en) 2010-10-06 2012-04-16 Chi Mei Lighting Tech Corp Light-emitting diode device and manufacturing method thereof
KR101707532B1 (ko) * 2010-10-29 2017-02-16 엘지이노텍 주식회사 발광 소자
CN103222074B (zh) * 2010-11-18 2016-06-01 首尔伟傲世有限公司 具有电极焊盘的发光二极管芯片
JP5605189B2 (ja) * 2010-11-26 2014-10-15 豊田合成株式会社 半導体発光素子
KR101274651B1 (ko) * 2010-11-30 2013-06-12 엘지디스플레이 주식회사 발광 다이오드 및 이의 제조 방법
KR101973207B1 (ko) * 2011-06-23 2019-04-29 삼성디스플레이 주식회사 금속 산화물이 함유된 양극 및 상기 양극을 포함하는 유기발광소자
KR20130019276A (ko) * 2011-08-16 2013-02-26 엘지이노텍 주식회사 발광소자
TWI479694B (zh) * 2012-01-11 2015-04-01 Formosa Epitaxy Inc Light emitting diode wafers
KR102022659B1 (ko) * 2012-02-20 2019-11-04 서울바이오시스 주식회사 고효율 발광 다이오드 및 그것을 제조하는 방법
WO2014025195A1 (ko) * 2012-08-07 2014-02-13 서울바이오시스 주식회사 웨이퍼 레벨의 발광 다이오드 어레이 및 그의 제조방법
US9318529B2 (en) * 2012-09-07 2016-04-19 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US10804316B2 (en) * 2012-08-07 2020-10-13 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
KR101977278B1 (ko) * 2012-10-29 2019-09-10 엘지이노텍 주식회사 발광 소자
KR102013363B1 (ko) * 2012-11-09 2019-08-22 서울바이오시스 주식회사 발광 소자 및 그것을 제조하는 방법
US9536924B2 (en) * 2012-12-06 2017-01-03 Seoul Viosys Co., Ltd. Light-emitting diode and application therefor
CN109979925B (zh) * 2012-12-06 2024-03-01 首尔伟傲世有限公司 发光二极管
KR102037865B1 (ko) * 2013-02-01 2019-10-30 삼성전자주식회사 반도체 발광소자 및 반도체 발광소자 제조방법
JP6580299B2 (ja) * 2013-02-12 2019-09-25 日亜化学工業株式会社 発光装置
KR102075983B1 (ko) * 2013-06-18 2020-02-11 삼성전자주식회사 반도체 발광소자
US9761774B2 (en) * 2014-12-16 2017-09-12 Epistar Corporation Light-emitting element with protective cushioning
KR101546929B1 (ko) * 2013-09-24 2015-08-25 서울바이오시스 주식회사 발광 다이오드 및 그것을 갖는 발광 다이오드 모듈
TWI591848B (zh) 2013-11-28 2017-07-11 晶元光電股份有限公司 發光元件及其製造方法
JP6458463B2 (ja) * 2013-12-09 2019-01-30 日亜化学工業株式会社 発光素子
JP6485019B2 (ja) 2013-12-19 2019-03-20 日亜化学工業株式会社 半導体発光素子
JP6256235B2 (ja) * 2014-07-18 2018-01-10 日亜化学工業株式会社 半導体発光素子の製造方法
DE102014114674A1 (de) * 2014-10-09 2016-04-14 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102015102043A1 (de) 2015-02-12 2016-08-18 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
US20180130926A1 (en) * 2015-02-17 2018-05-10 Genesis Photonics Inc. Light emitting diode
US20160276541A1 (en) * 2015-03-16 2016-09-22 Toshiba Corporation Light Emitting Diodes With Current Injection Enhancement From The Periphery
KR20170028082A (ko) * 2015-09-03 2017-03-13 삼성전자주식회사 반도체 발광소자 및 제조방법
KR102623615B1 (ko) * 2015-09-25 2024-01-11 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자, 발광소자 패키지 및 발광장치
US10199542B2 (en) * 2015-12-22 2019-02-05 Epistar Corporation Light-emitting device
DE102016101612A1 (de) 2016-01-29 2017-08-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
KR102443694B1 (ko) * 2016-03-11 2022-09-15 삼성전자주식회사 전류 확산 특성 및 광 추출 효율을 향상시킬 수 있는 발광 소자
DE102016105056A1 (de) 2016-03-18 2017-09-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
US10615311B2 (en) * 2016-04-22 2020-04-07 Lg Innotek Co., Ltd. Light emitting device and display comprising same
DE102016112587A1 (de) * 2016-07-08 2018-01-11 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
USD795822S1 (en) * 2016-07-29 2017-08-29 Enraytek Optoelectronics Co., Ltd. LED chip
KR102532743B1 (ko) * 2016-12-06 2023-05-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
KR102382037B1 (ko) * 2017-05-04 2022-04-04 서울바이오시스 주식회사 고 신뢰성의 발광 다이오드
KR20190022326A (ko) * 2017-08-24 2019-03-06 서울바이오시스 주식회사 분포 브래그 반사기를 가지는 발광 다이오드
US20230075707A1 (en) * 2021-09-03 2023-03-09 Lumileds Llc Metal stacks for light emitting diodes for bonding and/or ohmic contact-reflective material

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Publication number Publication date
CN109478585B (zh) 2021-08-17
KR20190015549A (ko) 2019-02-13
JP2019519117A (ja) 2019-07-04
DE102016112587A1 (de) 2018-01-11
US20230231080A1 (en) 2023-07-20
US12080827B2 (en) 2024-09-03
US11631783B2 (en) 2023-04-18
KR102182509B1 (ko) 2020-11-25
CN109478585A (zh) 2019-03-15
US20220005974A1 (en) 2022-01-06
JP6715962B2 (ja) 2020-07-01
US20190326471A1 (en) 2019-10-24
WO2018007186A1 (de) 2018-01-11
US11164994B2 (en) 2021-11-02

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