DE112018000553A5 - Optoelektronischer Halbleiterchip - Google Patents

Optoelektronischer Halbleiterchip Download PDF

Info

Publication number
DE112018000553A5
DE112018000553A5 DE112018000553.4T DE112018000553T DE112018000553A5 DE 112018000553 A5 DE112018000553 A5 DE 112018000553A5 DE 112018000553 T DE112018000553 T DE 112018000553T DE 112018000553 A5 DE112018000553 A5 DE 112018000553A5
Authority
DE
Germany
Prior art keywords
semiconductor chip
optoelectronic semiconductor
optoelectronic
chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112018000553.4T
Other languages
English (en)
Other versions
DE112018000553B4 (de
Inventor
Xue Wang
Markus Bröll
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112018000553A5 publication Critical patent/DE112018000553A5/de
Application granted granted Critical
Publication of DE112018000553B4 publication Critical patent/DE112018000553B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
DE112018000553.4T 2017-01-27 2018-01-23 Optoelektronischer Halbleiterchip Active DE112018000553B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017101637.6A DE102017101637A1 (de) 2017-01-27 2017-01-27 Optoelektronischer Halbleiterchip
DE102017101637.6 2017-01-27
PCT/EP2018/051572 WO2018138081A1 (de) 2017-01-27 2018-01-23 Optoelektronischer halbleiterchip

Publications (2)

Publication Number Publication Date
DE112018000553A5 true DE112018000553A5 (de) 2019-10-10
DE112018000553B4 DE112018000553B4 (de) 2023-12-14

Family

ID=61024776

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102017101637.6A Withdrawn DE102017101637A1 (de) 2017-01-27 2017-01-27 Optoelektronischer Halbleiterchip
DE112018000553.4T Active DE112018000553B4 (de) 2017-01-27 2018-01-23 Optoelektronischer Halbleiterchip

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102017101637.6A Withdrawn DE102017101637A1 (de) 2017-01-27 2017-01-27 Optoelektronischer Halbleiterchip

Country Status (5)

Country Link
US (1) US11502222B2 (de)
JP (1) JP6924836B2 (de)
CN (1) CN110235258B (de)
DE (2) DE102017101637A1 (de)
WO (1) WO2018138081A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017104719A1 (de) * 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Halbleiterchip
DE102017123542A1 (de) 2017-10-10 2019-04-11 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102018107673A1 (de) 2018-03-15 2019-09-19 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Herstellungsverfahren für einen optoelektronischen Halbleiterchip
US11799058B2 (en) 2018-03-15 2023-10-24 Osram Oled Gmbh Optoelectronic semiconductor chip
DE102019126026A1 (de) * 2019-09-26 2021-04-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3763667B2 (ja) * 1998-04-23 2006-04-05 株式会社東芝 半導体発光素子
JP3881470B2 (ja) 1999-01-05 2007-02-14 ローム株式会社 半導体発光素子の製法
JP4039187B2 (ja) 2002-09-06 2008-01-30 日立電線株式会社 半導体発光素子
JP4601950B2 (ja) 2003-12-26 2010-12-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
TWI285970B (en) * 2005-08-26 2007-08-21 Arima Optoelectronics Corp Window interface layer structure of LED
JP4367393B2 (ja) * 2005-09-30 2009-11-18 日立電線株式会社 透明導電膜を備えた半導体発光素子
JP5408487B2 (ja) 2009-08-07 2014-02-05 ソニー株式会社 半導体発光素子
DE102010014667A1 (de) 2010-04-12 2011-10-13 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit Stromaufweitungsschicht
JP2012104677A (ja) 2010-11-11 2012-05-31 Toshiba Corp 半導体発光素子の製造方法
JP5095848B1 (ja) * 2011-05-18 2012-12-12 株式会社東芝 半導体発光素子
JP6077201B2 (ja) * 2011-08-11 2017-02-08 昭和電工株式会社 発光ダイオードおよびその製造方法
US20130049034A1 (en) 2011-08-31 2013-02-28 Yi Chieh Lin Light-emitting device
JP2013243202A (ja) 2012-05-18 2013-12-05 Stanley Electric Co Ltd 半導体発光素子の製造方法
JP2014103242A (ja) 2012-11-20 2014-06-05 Stanley Electric Co Ltd 半導体発光素子
JP6321919B2 (ja) 2013-04-30 2018-05-09 ローム株式会社 半導体発光素子
US9419181B2 (en) 2013-05-13 2016-08-16 Infineon Technologies Dresden Gmbh Electrode, an electronic device, and a method for manufacturing an optoelectronic device
EP3073587B1 (de) * 2013-11-19 2020-08-12 Sony Corporation Halbleiterlaserelement
EP2903027B1 (de) 2014-01-30 2018-08-22 AZUR SPACE Solar Power GmbH LED-Halbleiterbauelement
WO2015170848A1 (ko) * 2014-05-08 2015-11-12 엘지이노텍 주식회사 발광소자
JP6595801B2 (ja) * 2014-05-30 2019-10-23 エルジー イノテック カンパニー リミテッド 発光素子

Also Published As

Publication number Publication date
CN110235258B (zh) 2023-02-28
CN110235258A (zh) 2019-09-13
JP2020506536A (ja) 2020-02-27
DE102017101637A1 (de) 2018-08-02
US11502222B2 (en) 2022-11-15
US20190386174A1 (en) 2019-12-19
WO2018138081A1 (de) 2018-08-02
JP6924836B2 (ja) 2021-08-25
DE112018000553B4 (de) 2023-12-14

Similar Documents

Publication Publication Date Title
DE112016001960A5 (de) Strahlungsemittierendes optoelektronisches Bauelement
JP2019004144A5 (ja) 半導体デバイス
DE112017003576A5 (de) Halbleiterlaserdiode
DE112017003450A5 (de) Strahlungsemittierender Halbleiterchip
DE112019001354A5 (de) Optoelektronischer halbleiterchip
DE112017007068T8 (de) Halbleitervorrichtung
DE112018000940A5 (de) Strahlungsemittierendes optoelektronisches bauelement
TWI801301B (zh) 半導體記憶裝置
DE112018000553A5 (de) Optoelektronischer Halbleiterchip
DE112015002796A5 (de) Optoelektronischer Halbleiterchip
DE112015000703A5 (de) Optoelektronisches Halbleiterbauelement
DE102018212047A8 (de) Halbleitermodul
PL3168874T3 (pl) Obudowa chipów półprzewodnikowych z interfejsem optycznym
DE112015002763A5 (de) Optoelektronisches Halbleiterbauteil
TWI800873B (zh) 半導體記憶裝置
JPWO2019197946A5 (ja) 半導体装置
DE112017004053A5 (de) Optoelektronischer Halbleiterchip
DE112017002987A5 (de) Optoelektronisches halbleiterbauelement
DE112016001422A8 (de) Optoelektronischer Halbleiterchip
DE112014003318A5 (de) Optoelektronischer Halbleiterchip
DE112016005129A5 (de) Halbleiterlaserdiode
DE112014000439A5 (de) Optoelektronischer Halbleiterchip
DE112018002080A5 (de) Halbleiterlaser
DE112020001972A5 (de) Optoelektronisches Halbleiterbauelement
DE102017110821A8 (de) Halbleitervorrichtung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division