WO2015170848A1 - 발광소자 - Google Patents
발광소자 Download PDFInfo
- Publication number
- WO2015170848A1 WO2015170848A1 PCT/KR2015/004307 KR2015004307W WO2015170848A1 WO 2015170848 A1 WO2015170848 A1 WO 2015170848A1 KR 2015004307 W KR2015004307 W KR 2015004307W WO 2015170848 A1 WO2015170848 A1 WO 2015170848A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- light emitting
- electrode
- region
- semiconductor layer
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Definitions
- Embodiments relate to a light emitting device, a light emitting device package, and a light unit.
- Light emitting diodes are widely used as one of light emitting devices. Light-emitting diodes use the properties of compound semiconductors to convert electrical signals into light, such as infrared, visible and ultraviolet light.
- light emitting devices As the light efficiency of light emitting devices increases, light emitting devices have been applied to various fields including display devices and lighting devices.
- the embodiment provides a light emitting device, a light emitting device package, and a light unit capable of improving light extraction efficiency.
- the embodiment provides a light emitting device, a light emitting device package, and a light unit capable of lowering an operating voltage and improving reliability.
- the embodiment provides a light emitting device, a light emitting device package, and a light unit capable of lowering an operating voltage and improving brightness.
- the light emitting device may include a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; A protective layer disposed on the light emitting structure and including a plurality of through holes; A first electrode provided in the plurality of through holes, the first electrode including a plurality of metal dots electrically connected to the first conductivity type semiconductor layer; An electrode pad electrically connecting the plurality of metal dots constituting the first electrode, a first region disposed on the first electrode, and a second region disposed on the protective layer; A second electrode electrically connected to the second conductivity type semiconductor layer; It includes.
- the light emitting device may include a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; An energy disposed below the light emitting structure, the first region having a constant energy band gap in accordance with a distance from the light emitting structure, and a second region in which the energy band gap gradually decreases in accordance with a distance from the first region. Buffer layer; A tensile barrier layer disposed below the energy buffer layer and having an energy bandgap smaller than or equal to the energy bandgap of the second region; A window layer disposed under the tensile strain barrier layer; It includes.
- the light emitting device may include a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; A first window layer disposed under the light emitting structure and including impurities such as impurities included in the second conductivity type semiconductor layer; A second window layer disposed under the first window layer, the second window layer including impurities different from impurities included in the first window layer, and having a higher impurity concentration than the first window layer; A first electrode disposed on the light emitting structure and electrically connected to the first conductive semiconductor layer; A second electrode disposed under the second window layer and electrically connected to the second conductive semiconductor layer; It includes.
- the light emitting device, the light emitting device package, and the light unit according to the embodiment have an advantage of improving light extraction efficiency.
- the light emitting device, the light emitting device package, and the light unit according to the embodiment have an advantage of lowering an operating voltage and improving reliability.
- the light emitting device, the light emitting device package, and the light unit according to the embodiment have an advantage of lowering an operating voltage and improving brightness.
- FIG. 1 is a view showing a light emitting device according to an embodiment.
- FIG. 2 is a view showing an example of a first electrode applied to a light emitting device according to the embodiment.
- FIG 3 is a view showing an example of an electrode pad applied to the light emitting device according to the embodiment.
- FIG. 8 is a view showing another example of a light emitting device according to the embodiment.
- FIG. 9 is a diagram illustrating an example of a first electrode applied to the light emitting device of FIG. 8.
- FIG. 10 is a diagram illustrating an example of an electrode pad applied to the light emitting device of FIG. 8.
- 11 to 14 are views illustrating a difference between an ohmic contact area applied to a light emitting device according to an embodiment and an ohmic contact area applied to a conventional light emitting device.
- 15 is a view showing a light emitting device according to the embodiment.
- FIG. 16 illustrates an energy band gap of a semiconductor layer applied to a light emitting device according to the embodiment.
- 17 to 20 are views illustrating a method of manufacturing a light emitting device according to the embodiment.
- 21 is a view showing a light emitting device according to the embodiment.
- FIG. 22 illustrates an energy band gap of a semiconductor layer applied to a light emitting device according to the embodiment.
- 23 to 26 are views illustrating a method of manufacturing a light emitting device according to the embodiment.
- FIG. 27 is a view showing a light emitting device package according to the embodiment.
- FIG. 28 is a diagram illustrating a display device according to an exemplary embodiment.
- 29 is a diagram illustrating another example of a display device according to an exemplary embodiment.
- FIG. 30 is a view showing a lighting apparatus according to an embodiment.
- each layer (region), region, pattern, or structure is “on” or “under” the substrate, each layer (film), region, pad, or pattern.
- “up” and “under” include both “directly” or “indirectly” formed through another layer. do.
- the criteria for up / down or down / down each layer will be described with reference to the drawings.
- FIG. 1 is a view showing a light emitting device according to an embodiment.
- the light emitting device may include a light emitting structure 10, a first electrode 60, an electrode pad 70, and a protective layer 80.
- the light emitting structure 10 may include a first conductive semiconductor layer 11, an active layer 12, and a second conductive semiconductor layer 13.
- the active layer 12 may be disposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13.
- the active layer 12 may be disposed under the first conductive semiconductor layer 11, and the second conductive semiconductor layer 13 may be disposed under the active layer 12.
- the first conductivity type semiconductor layer 11 is formed of an n type semiconductor layer to which an n type dopant is added as a first conductivity type dopant
- the second conductivity type semiconductor layer 13 is a second conductivity type dopant.
- a p-type dopant may be formed as a p-type semiconductor layer.
- the first conductive semiconductor layer 11 may be formed of a p-type semiconductor layer
- the second conductive semiconductor layer 13 may be formed of an n-type semiconductor layer.
- the first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer.
- the first conductivity type semiconductor layer 11 may be implemented as a compound semiconductor.
- the first conductivity type semiconductor layer 11 may be implemented as, for example, a group II-VI compound semiconductor or a group III-V compound semiconductor.
- the first conductivity type semiconductor layer 11 may be formed of a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1). have.
- y may have a value of 0.5
- x may have a value of 0.5 to 0.8 in the compositional formula.
- the first conductive semiconductor layer 11 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, and the like, and may be doped with n-type dopants such as Si, Ge, Sn, Se, Te, or the like.
- the active layer 12 In the active layer 12, electrons (or holes) injected through the first conductivity type semiconductor layer 11 and holes (or electrons) injected through the second conductivity type semiconductor layer 13 meet each other.
- the layer emits light due to a band gap difference of an energy band according to a material forming the active layer 12.
- the active layer 12 may be formed of any one of a single well structure, a multiple well structure, a quantum dot structure, or a quantum line structure, but is not limited thereto.
- the active layer 12 may be implemented with a compound semiconductor.
- the active layer 12 may be implemented as, for example, a group II-VI or group III-V compound semiconductor.
- the active layer 12 may be formed of a semiconductor material having, for example, a composition formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1).
- the active layer 12 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, or the like.
- the active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers.
- the second conductive semiconductor layer 13 may be implemented with, for example, a p-type semiconductor layer.
- the second conductivity type semiconductor layer 13 may be implemented as a compound semiconductor.
- the second conductivity-type semiconductor layer 13 may be implemented by, for example, a group II-VI compound semiconductor or a group III-V compound semiconductor.
- the second conductivity-type semiconductor layer 13 may be formed of a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1). have.
- the second conductive semiconductor layer 13 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, and the like, and may be doped with p-type dopants such as Mg, Zn, Ca, Sr, Ba, and C.
- the light emitting structure 10 may include at least two elements selected from aluminum (Al), gallium (Ga), indium (In), and phosphorus (P).
- the first conductive semiconductor layer 11 may include a p-type semiconductor layer
- the second conductive semiconductor layer 13 may include an n-type semiconductor layer.
- a semiconductor layer including an n-type or p-type semiconductor layer may be further formed below the second conductive semiconductor layer 13.
- the light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures.
- the doping concentrations of the impurities in the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10 may be formed in various ways, but is not limited thereto.
- the light emitting device may include a window layer 15.
- the window layer 15 may be formed of a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1).
- the window layer 15 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, or the like.
- the window layer 15 may be disposed under the second conductivity type semiconductor layer 13.
- the window layer 15 may provide a current spreading effect.
- the light emitting device may include an omni directional reflector (ODR) layer 21, an ohmic contact layer 23, and a reflective layer 30.
- ODR omni directional reflector
- the ODR layer 21 may perform a function of reflecting light incident from an upper direction upward.
- the ODR layer 21 may be implemented to have a lower refractive index than the light emitting structure 10.
- the ODR layer 21 may be selected to have a low refractive index having a large difference from the refractive index of the material of the light emitting structure 10, thereby providing a reflective function.
- the ODR layer 21 may be disposed in contact with the window layer 15.
- the ODR layer 21 may include an oxide or a nitride.
- the ODR layer 21 includes, for example, SiO 2 , SiN x , Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO).
- ITO Indium-Tin-Oxide
- IZO Indium-Zinc-Oxide
- AZO Aluminum-Zinc-Oxide
- ATO Antimony-Tin-Oxide
- IZTO Indium-Zinc-Tin-Oxide
- IAZO Indium-Aluminum-Zinc-Oxide
- GZO Gadium-Zinc-Oxide
- IGZO Indium-Gallium-Zinc-Oxide
- IGTO Indium-Gallium-Oxide
- Tin-Oxide Zinc-Oxide
- AZO Alluminanum-Zinc-Oxide
- the ohmic contact layer 23 may be implemented to be in ohmic contact with the window layer 15.
- the ohmic contact layer 23 may include an area in ohmic contact with the window layer 15.
- the ohmic contact layer 23 may be electrically connected to the light emitting structure 10.
- the ohmic contact layer 23 may be disposed through the ODR layer 21.
- the ohmic contact layer 23 may be implemented to have an upper surface of a circle or ellipse shape.
- the ohmic contact layer 23 may include at least one selected from materials such as Au, Au / AuBe / Au, AuZn, ITO, AuBe, and GeAu.
- the reflective layer 30 may be disposed under the ohmic contact layer 23.
- the reflective layer 30 may be disposed under the ODR layer 21.
- the reflective layer 30 may perform a function of reflecting light incident from an upper direction in an upper direction.
- the reflective layer 30 may include at least one selected from materials such as Ag, Au, and Al.
- the light emitting device may include a bonding layer 40 and a support substrate 50.
- the bonding layer 40 may perform a function of attaching the reflective layer 30 to the support substrate 50.
- the bonding layer 40 is, for example, a material such as Sn, AuSn, Pd, Al, Ti, Au, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Ta, Ti / Au / In / Au It may include at least one selected from among.
- the support substrate 50 may be a semiconductor substrate in which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W, or impurities are implanted (eg, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe and the like) may be included.
- the light emitting device may include the first electrode 60, the electrode pad 70, and the protective layer 80 disposed on the light emitting structure 10.
- the first electrode 60 may be electrically connected to the first conductivity type semiconductor layer 11.
- the first electrode 60 may be disposed in contact with the first conductive semiconductor layer 11.
- the first electrode 60 may be disposed in ohmic contact with the first conductivity-type semiconductor layer 11.
- the first electrode 60 may include a region in ohmic contact with the light emitting structure 10.
- the first electrode 60 may include a region in ohmic contact with the first conductivity-type semiconductor layer 11.
- the first electrode 60 may include at least one selected from Ge, Zn, Mg, Ca, Au, Ni, AuGe, AuGe / Ni / Au, and the like.
- a high concentration impurity semiconductor layer may be further disposed between the first electrode 60 and the first conductive semiconductor layer 11.
- the high concentration impurities semiconductor layer may be implemented as a GaAs layer.
- the high concentration impurity semiconductor layer may include impurities having the same polarity as the first conductivity type semiconductor layer 11.
- the high concentration impurity semiconductor layer may include a higher concentration of impurities than the first conductivity type semiconductor layer 11.
- the electrode pad 70 may be electrically connected to the first electrode 60.
- the electrode pad 70 may be disposed on the first electrode 60.
- the electrode pad 70 may be disposed in contact with the first electrode 60.
- the electrode pad 70 may be connected to an external power source to provide power to the light emitting structure 10.
- the electrode pad 70 is formed of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, Mo, Ti / Au / Ti / Pt / Au, Ni / Au / Ti / Pt / Au, Cr / Al It may include at least any one selected from / Ni / Cu / Ni / Au.
- the passivation layer 80 may be disposed on the light emitting structure 10.
- the protective layer 80 may be disposed around the light emitting structure 10.
- the protective layer 80 may be disposed on the side surface of the light emitting structure 10.
- the protective layer 80 may be disposed around the window layer 15. Some areas of the protective layer 80 may be disposed on some areas of the window layer 15.
- the protective layer 80 may include at least one of an oxide or a nitride. At least one of the protective layer 80 is selected from the group consisting of Si0 2 , Si x O y , Si 3 N 4 , Si x N y , SiO x N y , Al 2 O 3 , TiO 2 , AlN, and the like. Can be formed.
- FIG. 2 is a plan view showing an example of the first electrode 60 applied to the light emitting device according to the embodiment
- FIG. 3 is a plan view showing an example of the electrode pad 70 applied to the light emitting device according to the embodiment.
- the first electrode 60 may be disposed on the light emitting structure 10.
- the first electrode 60 may include a main electrode 61 and a peripheral electrode 63.
- the main electrode 61 may be disposed in the central area of the upper surface of the light emitting structure 10, and the peripheral electrode 63 may be branched from the main electrode 61 to extend in the outer direction. Can be.
- the width of the peripheral electrode 63 may be provided to 4 micrometers to 5 micrometers.
- the main electrode 61 may include a top surface of a circular or polygonal shape.
- the first electrode 60 may be electrically connected to the first conductivity type semiconductor layer 11.
- the main electrode 61 may be electrically connected to the first conductivity type semiconductor layer 11.
- the peripheral electrode 63 may be electrically connected to the first conductivity type semiconductor layer 11.
- the electrode pad 70 may be disposed at a position corresponding to the main electrode 61.
- the electrode pad 70 may have a circular or polygonal upper surface.
- the electrode pad 70 may be electrically connected to the first electrode 60.
- the electrode pad 70 may be electrically connected to the main electrode 61.
- the electrode pad 70 may be electrically connected to the peripheral electrode 63.
- the electrode pad 70 may be disposed on the main electrode 61.
- the electrode pad 70 may be in contact with the main electrode 61.
- an area of the electrode pad 70 may be larger than that of the main electrode 61.
- the protective layer 80 may be disposed under the electrode pad 70.
- the passivation layer 80 may be disposed on the light emitting structure 10.
- the protective layer 80 may be disposed on the first conductivity type semiconductor layer 11.
- the first conductivity-type semiconductor layer 11 may include a light extraction structure provided on an upper surface.
- the light extraction structure may be referred to as an uneven structure.
- the light extraction structure may also be referred to as roughness.
- the passivation layer 80 may include a light extraction structure corresponding to the light extraction structure provided in the first conductivity type semiconductor layer 11.
- the protective layer 80 may include a through area.
- the first electrode 60 may be disposed in the through area.
- the main electrode 61 and the peripheral electrode 63 may be provided in a through area formed in the protective layer 60.
- the electrode pad 70 is electrically connected to the first electrode 60, the first region of the electrode pad 70 is disposed on the first electrode 70, and the second region is the protective layer 80. ) May be disposed above.
- the area of the electrode pad 70 may be provided larger than the area of the main electrode 61. Accordingly, the first region of the electrode pad 70 may be disposed in contact with the main electrode 61, and the second region of the electrode pad 70 may be disposed around the upper portion of the main electrode 61. And may be disposed on the protective layer 80.
- the refractive index of the protective layer 80 disposed below the electrode pad 70 may be selected to have a smaller value than the refractive index of the first conductive semiconductor layer 11. Accordingly, the protective layer 80 disposed below the electrode pad 70 may perform a kind of ODR layer function, and light incident from the light emitting structure 10 is reflected by the protective layer 80. The light may be propagated toward the light emitting structure 10 again.
- the refractive index of the protective layer 80 disposed below the electrode pad 70 may be lower than that of the protective layer 80 in the region where the electrode pad 70 is not disposed.
- the material of the protective layer 80 disposed below the electrode pad 70 and the protective layer 80 in a region where the electrode pad 70 is not disposed may be formed of different materials.
- the protective layer 80 disposed below the electrode pad 80 may include an oxide
- the protective layer 80 in a region where the electrode pad 80 is not disposed may include nitride.
- the protective layer 80 disposed below the electrode pad 70 performs a function of a kind of ODR layer to reflect light incident from the light emitting structure 10 direction, and the electrode pad ( The passivation layer 80 in a region where 70 is not disposed may transmit light incident from the light emitting structure 10 toward the outside.
- light incident from the light emitting structure 10 may be prevented from being absorbed by the electrode pad 70 through the protective layer 80. Accordingly, light reflected from the protective layer 80 disposed below the electrode pad 70 may propagate toward the light emitting structure 10, and the propagated light passes through the light emitting structure 10. Or it is reflected in the other direction from the light emitting structure 10 and extracted to the outside, the overall light extraction effect of the light emitting device according to the embodiment can be improved.
- the arrangement of the main electrode 61 and the peripheral electrode 63 may be variously modified.
- the arrangement of the pad electrode 70 may be variously modified to correspond to the arrangement of the main electrode 61 and the peripheral electrode 63.
- the support substrate 50 can be implemented as a conductive, the power to the light emitting structure 10 by an external power source connected to the support substrate 50 Can be applied. Power may be applied to the second conductive semiconductor layer 13 through the support substrate 50.
- the second electrode electrically connected to the second conductivity type semiconductor layer 13 may include the ohmic contact layer 23, the reflective layer 30, the bonding layer 40, and the support substrate ( 50) may be included.
- the semiconductor layer 13 and the window layer 15 may be formed.
- the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 may be referred to as a light emitting structure 10.
- the substrate 5 may be formed of, for example, at least one of sapphire substrate (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto.
- a buffer layer may be further formed between the substrate 5 and the etch stop layer 7.
- the etch stop layer 7 may be formed of, for example, a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1). The function of the etch stop layer 7 will be described later.
- the first conductivity type semiconductor layer 11 is formed of an n type semiconductor layer to which an n type dopant is added as a first conductivity type dopant
- the second conductivity type semiconductor layer 13 is a second conductivity type. It may be formed of a p-type semiconductor layer to which a p-type dopant is added as a type dopant.
- the first conductive semiconductor layer 11 may be formed of a p-type semiconductor layer
- the second conductive semiconductor layer 13 may be formed of an n-type semiconductor layer.
- the first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer.
- the first conductivity type semiconductor layer 11 may be implemented as a compound semiconductor.
- the first conductivity type semiconductor layer 11 may be implemented as, for example, a group II-VI compound semiconductor or a group III-V compound semiconductor.
- the first conductivity type semiconductor layer 11 may be formed of a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1). have.
- y may have a value of 0.5
- x may have a value of 0.5 to 0.8 in the compositional formula.
- the first conductive semiconductor layer 11 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, and the like, and may be doped with n-type dopants such as Si, Ge, Sn, Se, Te, or the like.
- the active layer 12 In the active layer 12, electrons (or holes) injected through the first conductivity type semiconductor layer 11 and holes (or electrons) injected through the second conductivity type semiconductor layer 13 meet each other.
- the layer emits light due to a band gap difference of an energy band according to a material forming the active layer 12.
- the active layer 12 may be formed of any one of a single well structure, a multiple well structure, a quantum dot structure, or a quantum line structure, but is not limited thereto.
- the active layer 12 may be implemented with a compound semiconductor.
- the active layer 12 may be implemented as, for example, a group II-VI or group III-V compound semiconductor.
- the active layer 12 may be formed of a semiconductor material having, for example, a composition formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1).
- the active layer 12 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, or the like.
- the active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers.
- the second conductive semiconductor layer 13 may be implemented with, for example, a p-type semiconductor layer.
- the second conductivity type semiconductor layer 13 may be implemented as a compound semiconductor.
- the second conductivity-type semiconductor layer 13 may be implemented by, for example, a group II-VI compound semiconductor or a group III-V compound semiconductor.
- the second conductivity-type semiconductor layer 13 may be formed of a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1). have.
- the second conductive semiconductor layer 13 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, and the like, and may be doped with p-type dopants such as Mg, Zn, Ca, Sr, Ba, and C.
- the light emitting structure 10 may include at least two elements selected from aluminum (Al), gallium (Ga), indium (In), and phosphorus (P).
- the window layer 15 may be formed of a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1).
- the window layer 15 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, or the like.
- the window layer 15 may provide a current spreading effect when the light emitting device is driven.
- an ODR layer 21, an ohmic contact layer 23, and a reflective layer 30 may be formed on the window layer 15.
- the ODR layer 21 may perform a function of reflecting incident light again.
- the ODR layer 21 may be implemented to have a lower refractive index than the light emitting structure 10.
- the ODR layer 21 may be selected to have a low refractive index having a large difference from the refractive index of the material of the light emitting structure 10, thereby providing a reflective function.
- the ODR layer 21 may be disposed in contact with the window layer 15.
- the ODR layer 21 may include an oxide or a nitride.
- the ODR layer 21 may include, for example, SiO 2 , SiNx, ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), AZO (Aluminum-Zinc-Oxide), ATO (Antimony-Tin-Oxide) , Indium-Zinc-Tin-Oxide (IZTO), Indium-Aluminum-Zinc-Oxide (IAZO), Gallium-Zinc-Oxide (GZO), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin -Oxide), AZO (Aluminum-Zinc-Oxide) may include at least one selected from materials.
- the ohmic contact layer 23 may be implemented to be in ohmic contact with the window layer 15.
- the ohmic contact layer 23 may include an area in ohmic contact with the window layer 15.
- the ohmic contact layer 23 may be electrically connected to the light emitting structure 10.
- the ohmic contact layer 23 may be disposed through the ODR layer 21.
- the ohmic contact layer 23 may be implemented to have an upper surface of a circle or ellipse shape.
- the ohmic contact layer 23 may include at least one selected from materials such as Au, Au / AuBe / Au, AuZn, ITO, AuBe, and GeAu.
- the reflective layer 30 may be disposed on the ohmic contact layer 23.
- the reflective layer 30 may be disposed on the ODR layer 21.
- the reflective layer 30 may perform a function of reflecting incident light again.
- the reflective layer 30 may include at least one selected from materials such as Ag, Au, and Al.
- a bonding layer 40 and a support substrate 50 may be provided on the reflective layer 30.
- the bonding layer 40 may perform a function of attaching the reflective layer 30 to the support substrate 50.
- the bonding layer 40 is, for example, a material such as Sn, AuSn, Pd, Al, Ti, Au, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Ta, Ti / Au / In / Au It may include at least one selected from among.
- the support substrate 50 may be a semiconductor substrate in which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W, or impurities are implanted (eg, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe and the like) may be included.
- the substrate 5 is removed from the etch stop layer 7.
- the substrate 5 may be removed by an etching process.
- the substrate 5 may be removed by a wet etching process, and the etch stop layer 7 is not etched so that only the substrate 5 is etched and separated. Can serve as a stop layer.
- the etch stop layer 7 may be separated from the light emitting structure 10 through a separate removal process.
- the etch stop layer 7 may be removed through a separate etching process.
- the etch stop layer 7 may be formed of a semiconductor material having, for example, a composition formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1).
- a first electrode 60 may be formed on the light emitting structure 10, and a light extracting structure may be formed on the first conductive semiconductor layer 11.
- isolation etching may be performed to etch the side surface of the light emitting structure 10.
- a protective layer 80 and an electrode pad 70 may be formed on the light emitting structure 10.
- the first electrode 60 may be disposed on the light emitting structure 10.
- the first electrode 60 may include a main electrode 61 and a peripheral electrode 63.
- the main electrode 61 may be disposed in a central area of the upper surface of the light emitting structure 10, and the peripheral electrode 63 is the main electrode 61. Branched from) may extend in the outward direction.
- the width of the peripheral electrode 63 may be provided to 4 micrometers to 5 micrometers.
- the main electrode 61 may include a top surface of a circular or polygonal shape.
- the first electrode 60 may be electrically connected to the first conductivity type semiconductor layer 11.
- the main electrode 61 may be electrically connected to the first conductivity type semiconductor layer 11.
- the peripheral electrode 63 may be electrically connected to the first conductivity type semiconductor layer 11.
- the electrode pad 70 may be disposed at a position corresponding to the main electrode 61.
- the electrode pad 70 may have a circular or polygonal upper surface.
- the electrode pad 70 may be electrically connected to the first electrode 60.
- the electrode pad 70 may be electrically connected to the main electrode 61.
- the electrode pad 70 may be electrically connected to the peripheral electrode 63.
- the electrode pad 70 may be disposed on the main electrode 61.
- the electrode pad 70 may be in contact with the main electrode 61.
- an area of the electrode pad 70 may be larger than that of the main electrode 61.
- the protective layer 80 may be disposed under the electrode pad 70.
- the passivation layer 80 may be disposed on the light emitting structure 10.
- the protective layer 80 may be disposed on the first conductivity type semiconductor layer 11.
- the first conductivity-type semiconductor layer 11 may include a light extraction structure provided on an upper surface.
- the light extraction structure may be referred to as an uneven structure.
- the light extraction structure may also be referred to as roughness.
- the passivation layer 80 may include a light extraction structure corresponding to the light extraction structure provided in the first conductivity type semiconductor layer 11.
- the protective layer 80 may include a through area.
- the first electrode 60 may be disposed in the through area.
- the electrode pad 70 is electrically connected to the first electrode 60, the first region of the electrode pad 70 is disposed on the first electrode 70, and the second region is the protective layer 80. ) May be disposed above.
- the area of the electrode pad 70 may be provided larger than the area of the main electrode 61. Accordingly, the first region of the electrode pad 70 may be disposed in contact with the main electrode 61, and the second region of the electrode pad 70 may be disposed around the upper portion of the main electrode 61. And may be disposed on the protective layer 80.
- the refractive index of the protective layer 80 disposed below the electrode pad 70 may be selected to have a smaller value than the refractive index of the first conductive semiconductor layer 11. Accordingly, the protective layer 80 disposed below the electrode pad 70 may perform a kind of ODR layer function, and light incident from the light emitting structure 10 is reflected by the protective layer 80. The light may be propagated toward the light emitting structure 10 again.
- the refractive index of the protective layer 80 disposed below the electrode pad 70 may be lower than that of the protective layer 80 in the region where the electrode pad 70 is not disposed.
- the material of the protective layer 80 disposed below the electrode pad 70 and the protective layer 80 in a region where the electrode pad 70 is not disposed may be formed of different materials.
- the protective layer 80 disposed below the electrode pad 80 may include an oxide
- the protective layer 80 in a region where the electrode pad 80 is not disposed may include nitride.
- the protective layer 80 disposed below the electrode pad 70 performs a function of a kind of ODR layer to reflect light incident from the light emitting structure 10 direction, and the electrode pad ( The passivation layer 80 in a region where 70 is not disposed may transmit light incident from the light emitting structure 10 toward the outside.
- light incident from the light emitting structure 10 may be prevented from being absorbed by the electrode pad 70 through the protective layer 80. Accordingly, light reflected from the protective layer 80 disposed below the electrode pad 70 may propagate toward the light emitting structure 10, and the propagated light passes through the light emitting structure 10. Or it is reflected in the other direction in the light emitting structure 10 and extracted to the outside, the overall light extraction effect can be improved.
- the arrangement of the main electrode 61 and the peripheral electrode 63 may be variously modified.
- the arrangement of the pad electrode 70 may be variously modified to correspond to the arrangement of the main electrode 61 and the peripheral electrode 63.
- FIG. 8 is a view showing another example of a light emitting device according to the embodiment.
- the parts described with reference to FIGS. 1 to 7 may be briefly described or omitted.
- the light emitting device may include a light emitting structure 10, a first electrode 60, an electrode pad 70, and a protective layer 80.
- the first electrode 60 may be disposed on the light emitting structure 10. As illustrated in FIGS. 8 and 9, the first electrode 60 may include a main electrode 61 and a peripheral electrode 63. The main electrode 61 and the peripheral electrode 63 may be spaced apart from each other on the light emitting structure 10. The peripheral electrode 63 may be provided in plurality.
- the main electrode 61 and the peripheral electrode 63 may be provided in a dot shape.
- the main electrode 61 and the peripheral electrode 63 may have the same size or may be different from each other.
- the peripheral electrode 63 may be provided in a plurality of point shapes and may be provided to have different sizes.
- the peripheral electrode 63 may be provided in a smaller size as it moves away from the main electrode 61.
- the width of the peripheral electrode 63 may be provided from 4 micrometers to 5 micrometers.
- the main electrode 61 and the peripheral electrode 63 may include an upper surface of a circular or polygonal shape.
- the first electrode 60 may be electrically connected to the first conductivity type semiconductor layer 11.
- the main electrode 61 may be electrically connected to the first conductivity type semiconductor layer 11.
- the peripheral electrode 63 may be electrically connected to the first conductivity type semiconductor layer 11.
- the electrode pad 70 may include a main pad 71 and a finger pad 73 as shown in FIGS. 8 and 10.
- the finger pad 73 may be electrically connected to the main pad 71.
- the finger pad 73 may be branched from the main pad 71.
- power may be applied to the main pad 71 from the outside.
- the finger pad 73 may extend in an outward direction from the main pad 71.
- the finger pad 73 may be disposed in a symmetrical shape.
- the finger pad 73 may be arranged in an asymmetrical shape.
- the electrode pad 70 may be electrically connected to the first electrode 60.
- the electrode pad 70 may be electrically connected to the main electrode 61.
- the electrode pad 70 may be electrically connected to the peripheral electrode 63.
- the electrode pad 70 may be disposed on the main electrode 61.
- the electrode pad 70 may be in contact with the main electrode 61.
- an area of the electrode pad 70 may be larger than that of the main electrode 61.
- the protective layer 80 may be disposed under the electrode pad 70.
- the passivation layer 80 may be disposed on the light emitting structure 10.
- the protective layer 80 may be disposed on the first conductivity type semiconductor layer 11.
- the first conductivity-type semiconductor layer 11 may include a light extraction structure provided on an upper surface.
- the light extraction structure may be referred to as an uneven structure.
- the light extraction structure may also be referred to as roughness.
- the passivation layer 80 may include a light extraction structure corresponding to the light extraction structure provided in the first conductivity type semiconductor layer 11.
- the finger pad 73 may be disposed on the peripheral electrode 63.
- the finger pad 73 may be in contact with the peripheral electrode 63.
- the finger pad 73 may be in contact with the plurality of peripheral electrodes 63.
- the finger pad 73 may electrically connect the main electrode 61 and at least one peripheral electrode 63.
- the finger pad 73 may electrically connect the plurality of peripheral electrodes 63.
- the first electrode 60 may be spaced apart from each other in the first region (one of the main electrode 61 or the peripheral electrode 63) and the second region (the other of the peripheral electrode 63). ), And the electrode pad 70 may be electrically connected to the first region and the second region.
- the width of the finger pad 73 may be the same as or different from the width of the peripheral electrode 63.
- the width of the finger pad 73 may be provided as 4 micrometers to 5 micrometers.
- the protective layer 80 may include a plurality of through holes.
- the main electrode 61 and the peripheral electrode 63 may be provided in the through hole.
- the size of the through hole may be the same as that of the corresponding main electrode 61 or the peripheral electrode 63.
- the width of the through hole may be 4 micrometers to 5 micrometers.
- each of the first electrodes 60 may include a plurality of metal dots provided in the through-holes and electrically connected to the first conductivity-type semiconductor layer 11.
- the protective layer 80 may be disposed around the first electrode 60 provided in the plurality of dot shapes. A portion of the protective layer 80 may be disposed under the electrode pad 70. For example, the protective layer 80 provided between the adjacent peripheral electrodes 63 may be disposed under the finger pad 73. In addition, when the area of the main pad 71 is larger than the area of the main electrode 61, the protective layer 80 may be disposed under the main pad 71. That is, the protective layer 80 may be disposed between the main pad 71 and the first conductive semiconductor layer 11.
- the electrode pad 70 may electrically connect the plurality of metal dots constituting the first electrode 60.
- the first region of the electrode pad 70 may be disposed on the first electrode 60, and the second region of the electrode pad 70 may be disposed on the protective layer 80.
- the first electrode 60 includes a plurality of regions spaced apart from each other, and the plurality of regions spaced apart from each other are electrically connected by the electrode pad 70.
- an external power source connected to the electrode pad 70 is applied to the main electrode 61 and the peripheral electrode 63 through the main pad 71 and the finger pad 73. Accordingly, an external power source connected to the electrode pad 70 may be applied to the first conductive semiconductor layer 11 through the first electrode 60.
- the arrangement of the main electrode 61 and the peripheral electrode 63 may be variously modified.
- the arrangement of the main pad 71 and the finger pad 73 may be variously modified to correspond to the arrangement of the main electrode 61 and the peripheral electrode 63.
- the main electrode 61 and the peripheral electrode 63 form ohmic contact with the first conductivity type semiconductor layer 11.
- ohmic contact between the metal layer and the semiconductor layer may be implemented through a kind of heat treatment process after forming the metal layer on the semiconductor layer.
- a diffusion region is formed between the metal layer and the semiconductor layer through the heat treatment step, and light absorption occurs in the diffusion region. Accordingly, the larger the diffusion region, the less the light extraction effect provided to the outside from the light emitting structure.
- FIGS. 11 and 12 illustrate an ohmic contact region applied to a conventional light emitting device
- FIGS. 13 and 14 illustrate an ohmic contact S region applied to a light emitting device according to an embodiment.
- the diffusion region 19 is provided between the metal layer 65 and the semiconductor layer 17 having a predetermined length.
- the diffusion region 19 is formed to be diffused around and under the metal layer 65.
- the diffusion region 29 is provided between the plurality of metal dots 63 and the semiconductor layer 27.
- the diffusion region 29 also forms a small region.
- the diffusion region 29 in forming the ohmic contact region, since the diffusion region 29 can be provided small, the amount of light absorbed by the diffusion region 29 can be reduced, and as a result, the amount of light extracted to the outside is reduced. It can be improved.
- the first electrode 60 is provided to the main electrode 61 and the peripheral electrode 63 spaced apart from each other, so that the first electrode 60 emits the light.
- the structure 10 may be provided in a smaller area than the conventional light emitting device.
- the light emitting device has an advantage of improving light extraction efficiency.
- the main electrode 61 and the peripheral electrode 63 are evenly distributed on the first conductive semiconductor layer 11, it is possible to provide a current spreading effect.
- the refractive index of the protective layer 80 disposed below the electrode pad 70 may be selected to have a smaller value than the refractive index of the first conductive semiconductor layer 11. Accordingly, the protective layer 80 disposed below the electrode pad 70 may perform a kind of ODR layer function, and light incident from the light emitting structure 10 is reflected by the protective layer 80. The light may be propagated toward the light emitting structure 10 again.
- the refractive index of the protective layer 80 disposed below the electrode pad 70 may be lower than that of the protective layer 80 in the region where the electrode pad 70 is not disposed.
- the material of the protective layer 80 disposed below the electrode pad 70 and the protective layer 80 in a region where the electrode pad 70 is not disposed may be formed of different materials.
- the protective layer 80 disposed below the electrode pad 80 may include an oxide
- the protective layer 80 in a region where the electrode pad 80 is not disposed may include nitride.
- the protective layer 80 disposed below the electrode pad 70 performs a function of a kind of ODR layer to reflect light incident from the light emitting structure 10 direction, and the electrode pad ( The passivation layer 80 in a region where 70 is not disposed may transmit light incident from the light emitting structure 10 toward the outside.
- light incident from the light emitting structure 10 may be prevented from being absorbed by the electrode pad 70 through the protective layer 80. Accordingly, light reflected from the protective layer 80 disposed below the electrode pad 70 may propagate toward the light emitting structure 10, and the propagated light passes through the light emitting structure 10. Or it is reflected in the other direction in the light emitting structure 10 and extracted to the outside, the overall light extraction effect can be improved.
- the arrangement of the main electrode 61 and the peripheral electrode 63 may be variously modified.
- the arrangement of the pad electrode 70 may be variously modified to correspond to the arrangement of the main electrode 61 and the peripheral electrode 63.
- the support substrate 50 can be implemented as a conductive, the power to the light emitting structure 10 by an external power source connected to the support substrate 50 Can be applied. Power may be applied to the second conductive semiconductor layer 13 through the support substrate 50.
- the second electrode electrically connected to the second conductivity type semiconductor layer 13 may include the ohmic contact layer 23, the reflective layer 30, the bonding layer 40, and the support substrate ( 50) may be included.
- 15 is a view showing a light emitting device according to the embodiment.
- the light emitting device may include a light emitting structure 10, a window layer 15, an energy buffer layer 90, and a tensile strain barrier layer 95 (Tsnile Strain Barrier Layer). have. Except for the configuration shown in Figure 1 will be described.
- the energy buffer layer 90 may be disposed under the light emitting structure 10.
- the energy buffer layer 90 may include impurities.
- the energy buffer layer 90 may include, for example, impurities having polarity with that of the second conductive semiconductor layer.
- the energy buffer layer 90 may include a region where an energy band gap is changed according to a distance from the light emitting structure 10. 2 illustrates an energy band gap of a semiconductor layer applied to a light emitting device according to an embodiment.
- the energy buffer layer 90 may include a first region 91 and a second region 92.
- the first region 91 may have a constant energy band gap regardless of a change in distance from the light emitting structure 10.
- the second region 92 may be provided such that an energy band gap gradually decreases according to a distance from the first region 91.
- the tensile strain barrier layer 95 may be disposed below the energy buffer layer 90.
- the tensile strain barrier layer 95 may be disposed under the second region 92.
- the tensile strain barrier layer 95 may have an energy bandgap smaller than or equal to the energy bandgap of the energy buffer layer 90.
- the tensile strain barrier layer 95 may have an energy bandgap smaller than or equal to the energy bandgap of the second region 92.
- the tensile strain barrier layer 95 may include impurities.
- the tensile strain barrier layer 95 may include impurities having the same polarity as that of the second conductive semiconductor layer 13.
- the window layer 15 may be disposed under the tensile strain barrier layer 95.
- the thickness of the energy buffer layer 90 may be provided from 180 nanometers to 250 nanometers.
- the thickness of the first region 91 may be provided to 170 nanometers to 230 nanometers, and the thickness of the first region 92 may be provided to 10 nanometers to 20 nanometers.
- the energy buffer layer 90 may be provided thicker than the tensile strain barrier layer 95.
- the tensile barrier layer 95 may be provided in a thickness of 10 nanometers to 20 nanometers.
- the light emitting device may include a first electrode 60 and an electrode pad 70 disposed on the light emitting structure 10.
- the first electrode 60 may be electrically connected to the first conductivity type semiconductor layer 11.
- the first electrode 60 may be disposed in contact with the first conductive semiconductor layer 11.
- the first electrode 60 may be disposed in ohmic contact with the first conductivity-type semiconductor layer 11.
- the first electrode 60 may include a region in ohmic contact with the light emitting structure 10.
- the first electrode 60 may include a region in ohmic contact with the first conductivity-type semiconductor layer 11.
- the first electrode 60 may include at least one selected from Ge, Zn, Mg, Ca, Au, Ni, AuGe, AuGe / Ni / Au, and the like.
- a high concentration impurity semiconductor layer may be further included between the first electrode 60 and the first conductivity type semiconductor layer 11.
- a GaAs layer may be further disposed between the first electrode 60 and the first conductivity type semiconductor layer 11, and may include a GaAs layer containing a higher concentration impurity than the impurity concentration of the first conductivity type semiconductor layer 11. have.
- the electrode pad 70 may be electrically connected to the first electrode 60.
- the electrode pad 70 may be disposed on the first electrode 60.
- the electrode pad 70 may be disposed in contact with the first electrode 60.
- the electrode pad 70 may be connected to an external power source to provide power to the light emitting structure 10.
- the electrode pad 70 is formed of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, Mo, Ti / Au / Ti / Pt / Au, Ni / Au / Ti / Pt / Au, Cr / Al It may include at least any one selected from / Ni / Cu / Ni / Au.
- the light emitting device may include a protective layer 80.
- the protective layer 80 may be disposed on the light emitting structure 10.
- the protective layer 80 may be disposed around the light emitting structure 10.
- the protective layer 80 may be disposed on the side surface of the light emitting structure 10.
- the protective layer 80 may be disposed around the window layer 15. Some areas of the protective layer 80 may be disposed on some areas of the window layer 15.
- the protective layer 80 may be disposed on the first conductivity type semiconductor layer 11.
- the protective layer 80 may be disposed on the first electrode 60.
- the protective layer 80 may include a light extraction structure provided on an upper surface.
- the light extraction structure may be referred to as an uneven structure, and may also be referred to as roughness.
- the light extracting structures may be arranged regularly, or may be arranged randomly.
- the light extraction structure provided on the top surface of the protective layer 80 may correspond to the light extraction structure provided on the top surface of the first conductivity type semiconductor layer 11.
- the protective layer 80 may include at least one of an oxide or a nitride. At least one of the protective layer 80 is selected from the group consisting of Si0 2 , Si x O y , Si 3 N 4 , Si x N y , SiO x N y , Al 2 O 3 , TiO 2 , AlN, and the like. Can be formed.
- the light emitting device may further include the tensile strain barrier layer 95 to prevent the light emitting structure 10 from being damaged.
- the tensile strain barrier layer 95 may be formed of a material having a tensile strain force between the growth substrate and the window layer 15.
- the tensile strain barrier layer 95 may be provided as GaInP.
- the light emitting device may further include the energy buffer layer 90 whose energy band gap is changed according to the distance from the light emitting structure 10.
- the energy buffer layer 90 may include an AlGaInP composition.
- the energy band gap of the energy buffer layer 90 may change according to a change in the composition ratio of Al.
- the first region 91 may be provided to have a constant Al composition.
- the second region 92 may be provided such that an energy band gap decreases as the second region 92 moves away from the first region 91.
- the second region 92 may be provided such that the Al composition gradually decreases from the first region 91 so that an energy band gap becomes smaller.
- the second region 92 is provided such that the section adjacent to the first region 91 has an Al composition of 0.85, and gradually decreases away from the first region 91, and has a small Al composition of 0.3. Can be.
- the energy band gap of the energy buffer layer 90 may be sequentially changed to prevent the loss of holes moving in the direction of the window layer 15 from the direction of the active layer 12.
- the embodiment it is possible to reduce the operating voltage by improving the movement of the hole in this way.
- the operating voltage was 2.24 V
- an operating voltage of 1.96 V was measured.
- the first conductivity type semiconductor layer 11 may be implemented with Al 0.5 In 0.5 P (energy band gap: 2.52 eV), and the active layer 12 may have (Al 0.1 Ga 0.9 ) 0.5 In 0.5 P (energy band). A gap layer of 1.97 eV) and a barrier layer of (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P (energy band gap: 2.34 eV), and the second conductive semiconductor layer 13 is made of Al 0.5 In 0.5 P. (Energy bandgap: 2.52eV).
- the first region 91 of the energy buffer layer 90 is implemented as (Al 0.85 Ga 0.15 ) 0.5 In 0.5 P (energy band gap: 2.43 eV), and the second region 92 of the energy buffer layer 90 is formed.
- the lowest energy bandgap of the energy buffer layer 90 may be provided larger than the energy bandgap of the well layer constituting the active layer 12 and smaller than the energy bandgap of the window layer 15.
- the energy band gap of the tensile strain barrier layer 95 may be provided larger than the energy band gap of the well layer constituting the active layer 12 and smaller than the energy band gap of the window layer 15. This is to prevent light loss due to light absorption in the region when the semiconductor layer having a smaller energy band gap is formed than the well layer constituting the active layer 12.
- the etch stop layer 7 the first conductivity type semiconductor layer 11, the active layer 12, and the second conductivity type on the substrate 5.
- the semiconductor layer 13, the energy buffer layer 90, the tensile strain barrier layer 95, and the window layer 15 may be formed.
- the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 may be defined as a light emitting structure 10.
- the energy buffer layer 90 may be formed on the light emitting structure 10.
- the energy buffer layer 90 may include a region where an energy band gap is changed according to a distance from the light emitting structure 10. 16 illustrates an energy band gap of a semiconductor layer applied to a light emitting device according to the embodiment.
- the energy buffer layer 90 may include a first region 91 and a second region 92.
- the energy band gap may be uniformly provided in the first region 91 according to the distance from the light emitting structure 10.
- the second region 92 may be provided such that an energy band gap gradually decreases according to a distance from the first region 91.
- the tensile strain barrier layer 95 may be formed on the energy buffer layer 90.
- the tensile strain barrier layer 95 may be formed on the second region 92.
- the tensile strain barrier layer 95 may have an energy bandgap smaller than or equal to the energy bandgap of the energy buffer layer 90.
- the tensile strain barrier layer 95 may have an energy bandgap smaller than or equal to the energy bandgap of the second region 92.
- an ODR layer 21, an ohmic contact layer 23, and a reflective layer 30 may be formed on the window layer 15.
- a bonding layer 40 and a support substrate 50 may be provided on the reflective layer 30.
- a first electrode 60 is formed on the light emitting structure 10, and isolation etching is performed to etch the side surface of the light emitting structure 10.
- the passivation layer 80 and the electrode pad 70 may be formed on the light emitting structure 10 and the first electrode 60.
- the protective layer 80 may be disposed on the light emitting structure 10.
- the protective layer 80 may be disposed around the light emitting structure 10.
- the protective layer 80 may be disposed on the side surface of the light emitting structure 10.
- the protective layer 80 may be disposed around the window layer 15. Some areas of the protective layer 80 may be disposed on some areas of the window layer 15.
- the protective layer 80 may include at least one of an oxide or a nitride. At least one of the protective layer 80 is selected from the group consisting of Si0 2 , Si x O y , Si 3 N 4 , Si x N y , SiO x N y , Al 2 O 3 , TiO 2 , AlN, and the like. Can be formed.
- the protective layer 80 may be disposed on the first conductivity type semiconductor layer 11.
- the protective layer 80 may be disposed on the first electrode 60.
- the protective layer 80 may include a light extraction structure provided on an upper surface.
- the light extraction structure may be referred to as an uneven structure, and may also be referred to as roughness.
- the light extracting structures may be arranged regularly, or may be arranged randomly.
- the electrode pad 70 may be electrically connected to the first electrode 60.
- the electrode pad 70 may be disposed on the first electrode 60.
- the electrode pad 70 may be disposed in contact with the first electrode 60.
- the electrode pad 70 may be connected to an external power source to provide power to the light emitting structure 10.
- the electrode pad 70 is formed of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, Mo, Ti / Au / Ti / Pt / Au, Ni / Au / Ti / Pt / Au, Cr / Al It may include at least any one selected from / Ni / Cu / Ni / Au.
- the light emitting device manufacturing method described above may be modified and implemented according to the process design as needed.
- the light emitting structure 10 may be grown on a GaAs growth substrate, and the light emitting structure 10 may be grown on an AlGaInP composition.
- the window layer 15 may be formed of a GaP composition.
- the window layer 15 may have a tensile strain of 20,000 to 30,000 ppm based on the GaAs growth substrate due to the difference in lattice constant between the two layers. There is a problem that the light emitting structure 10 may be damaged.
- the light emitting device may further include the tensile strain barrier layer 95 to prevent the light emitting structure 10 from being damaged.
- the tensile strain barrier layer 95 may be formed of a material having a tensile strain force between the growth substrate and the window layer 15.
- the tensile strain barrier layer 95 may be provided as GaInP.
- the light emitting device may further include the energy buffer layer 90 whose energy band gap is changed according to the distance from the light emitting structure 10.
- the energy buffer layer 90 may include an AlGaInP composition.
- the energy band gap of the energy buffer layer 90 may change according to a change in the composition ratio of Al.
- the first region 91 may be provided to have a constant Al composition.
- the second region 92 may be provided such that an energy band gap decreases as the second region 92 moves away from the first region 91.
- the second region 92 may be provided such that the Al composition gradually decreases from the first region 91 so that an energy band gap becomes smaller.
- the second region 92 is provided such that the section adjacent to the first region 91 has an Al composition of 0.85, and gradually decreases away from the first region 91, and has a small Al composition of 0.3. Can be.
- the energy band gap of the energy buffer layer 90 may be sequentially changed to prevent the loss of holes moving in the direction of the window layer 15 from the direction of the active layer 12.
- the embodiment it is possible to reduce the operating voltage by improving the movement of the hole in this way.
- the operating voltage was 2.24 V
- an operating voltage of 1.96 V was measured.
- the first conductivity type semiconductor layer 11 may be implemented with Al 0.5 In 0.5 P (energy band gap: 2.52 eV), and the active layer 12 may have (Al 0.1 Ga 0.9 ) 0.5 In 0.5 P (energy band). A gap layer of 1.97 eV) and a barrier layer of (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P (energy band gap: 2.34 eV), and the second conductive semiconductor layer 13 is made of Al 0.5 In 0.5 P. (Energy bandgap: 2.52eV).
- the first region 91 of the energy buffer layer 90 is implemented as (Al 0.85 Ga 0.15 ) 0.5 In 0.5 P (energy band gap: 2.43 eV), and the second region 92 of the energy buffer layer 90 is formed.
- the lowest energy bandgap of the energy buffer layer 90 may be provided larger than the energy bandgap of the well layer constituting the active layer 12 and smaller than the energy bandgap of the window layer 15.
- the energy band gap of the tensile strain barrier layer 95 may be provided larger than the energy band gap of the well layer constituting the active layer 12 and smaller than the energy band gap of the window layer 15. This is to prevent light loss due to light absorption in the region when the semiconductor layer having a smaller energy band gap is formed than the well layer constituting the active layer 12.
- 21 is a view showing a light emitting device according to the embodiment.
- the light emitting device may include a light emitting structure 10, a first window layer 15, and a second window layer 16. Except for the configuration shown in Figures 1 and 15 will be described.
- the first window layer 15 may be disposed under the light emitting structure 10.
- the first window layer 15 may include impurities.
- the first window layer 15 may include impurities having the same polarity as that of the second conductive semiconductor layer 13.
- the first window layer 15 may include impurities such as impurities included in the second conductivity type semiconductor layer 13.
- the first window layer 15 may be formed of a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1).
- the first window layer 15 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, or the like.
- the first window layer 15 may provide a current spreading effect.
- the second window layer 16 may be disposed below the first window layer 15.
- the second window layer 16 may include impurities different from impurities included in the first window layer 15.
- An impurity concentration included in the second window layer 16 may be higher than an impurity concentration included in the first window layer 15.
- the second window layer 16 may be formed of a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1).
- the second window layer 16 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, or the like.
- the light emitting device may include an energy buffer layer 90 disposed between the first window layer 15 and the light emitting structure 10.
- the energy buffer layer 90 may include a first region 91 and a second region 92.
- the first region 91 may have a constant energy band gap regardless of a change in distance from the light emitting structure 10.
- the second region 92 may be provided such that an energy band gap gradually decreases according to a distance from the first region 91.
- the light emitting device may include a tensile strain barrier layer 95 disposed between the energy buffer layer 90 and the first window layer 15.
- the tensile strain barrier layer 95 may be disposed below the energy buffer layer 90.
- the tensile strain barrier layer 95 may be disposed under the second region 92.
- the tensile strain barrier layer 95 may have an energy bandgap smaller than or equal to the energy bandgap of the energy buffer layer 90.
- the tensile strain barrier layer 95 may have an energy bandgap smaller than or equal to the energy bandgap of the second region 92.
- the tensile strain barrier layer 95 may include impurities.
- the tensile strain barrier layer 95 may include impurities having the same polarity as that of the second conductive semiconductor layer 13.
- the light emitting device may include an impurity trap layer 17 disposed between the first window layer 15 and the tensile strain barrier layer 95.
- the impurity trap layer 17 may prevent diffusion of impurities included in the first window layer 15 into the light emitting structure 10.
- impurities included in the first window layer 15 are diffused into the light emitting structure 10, there is a problem in that an optical drop may occur and light extraction efficiency may decrease.
- the thickness of the energy buffer layer 90 may be provided from 180 nanometers to 250 nanometers.
- the thickness of the first region 91 may be provided to 170 nanometers to 230 nanometers, and the thickness of the first region 92 may be provided to 10 nanometers to 20 nanometers.
- the energy buffer layer 90 may be provided thicker than the tensile strain barrier layer 95.
- the tensile barrier layer 95 may be provided in a thickness of 10 nanometers to 20 nanometers.
- the light emitting device may include an omni directional reflector (ODR) layer 21, an ohmic contact layer 23, and a reflective layer 30.
- ODR omni directional reflector
- the ODR layer 21 may perform a function of reflecting light incident from an upper direction upward.
- the ODR layer 21 may be implemented to have a lower refractive index than the light emitting structure 10.
- the ODR layer 21 may be selected to have a low refractive index having a large difference from the refractive index of the material of the light emitting structure 10, thereby providing a reflective function.
- the ODR layer 21 may be disposed in contact with the second window layer 16.
- the ODR layer 21 may be selected to have a low refractive index having a large difference from the refractive index of the material forming the first window layer 15, thereby providing a reflective function.
- the ODR layer 21 may be selected to have a low refractive index having a large difference from the refractive index of the material forming the second window layer 16, thereby providing a reflective function.
- the ohmic contact layer 23 may be implemented to be in ohmic contact with the second window layer 16.
- the ohmic contact layer 23 may include an area in ohmic contact with the second window layer 16.
- the ohmic contact layer 23 may be electrically connected to the light emitting structure 10.
- the ohmic contact layer 23 may be disposed through the ODR layer 21.
- the ohmic contact layer 23 may be implemented to have an upper surface of a circle or ellipse shape.
- the ohmic contact layer 23 may include at least one selected from materials such as Au, Au / AuBe / Au, AuZn, ITO, AuBe, and GeAu.
- the reflective layer 30 may be disposed under the ohmic contact layer 23.
- the reflective layer 30 may be disposed under the ODR layer 21.
- the reflective layer 30 may perform a function of reflecting light incident from an upper direction in an upper direction.
- the reflective layer 30 may include at least one selected from materials such as Ag, Au, and Al.
- the light emitting device may include a first electrode 60 and an electrode pad 70 disposed on the light emitting structure 10.
- the first electrode 60 may be electrically connected to the first conductivity type semiconductor layer 11.
- the first electrode 60 may be disposed in contact with the first conductive semiconductor layer 11.
- the first electrode 60 may be disposed in ohmic contact with the first conductivity-type semiconductor layer 11.
- the first electrode 60 may include a region in ohmic contact with the light emitting structure 10.
- the first electrode 60 may include a region in ohmic contact with the first conductivity-type semiconductor layer 11.
- the first electrode 60 may include at least one selected from Ge, Zn, Mg, Ca, Au, Ni, AuGe, AuGe / Ni / Au, and the like.
- a high concentration impurity semiconductor layer may be further included between the first electrode 60 and the first conductivity type semiconductor layer 11.
- a GaAs layer may be further disposed between the first electrode 60 and the first conductivity type semiconductor layer 11, and may include a GaAs layer containing a higher concentration impurity than the impurity concentration of the first conductivity type semiconductor layer 11. have.
- the electrode pad 70 may be electrically connected to the first electrode 60.
- the electrode pad 70 may be disposed on the first electrode 60.
- the electrode pad 70 may be disposed in contact with the first electrode 60.
- the electrode pad 70 may be connected to an external power source to provide power to the light emitting structure 10.
- the electrode pad 70 is formed of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, Mo, Ti / Au / Ti / Pt / Au, Ni / Au / Ti / Pt / Au, Cr / Al It may include at least any one selected from / Ni / Cu / Ni / Au.
- the light emitting device may include a protective layer 80.
- the protective layer 80 may be disposed on the light emitting structure 10.
- the protective layer 80 may be disposed around the light emitting structure 10.
- the protective layer 80 may be disposed on the side surface of the light emitting structure 10.
- the protective layer 80 may be disposed around the first window layer 15. Some areas of the protective layer 80 may be disposed on some areas of the first window layer 15.
- the protective layer 80 may be disposed on the first conductivity type semiconductor layer 11.
- the protective layer 80 may be disposed on the first electrode 60.
- the protective layer 80 may include a light extraction structure provided on an upper surface.
- the light extraction structure may be referred to as an uneven structure, and may also be referred to as roughness.
- the light extracting structures may be arranged regularly, or may be arranged randomly.
- the light extraction structure provided on the top surface of the protective layer 80 may correspond to the light extraction structure provided on the top surface of the first conductivity type semiconductor layer 11.
- the protective layer 80 may include at least one of an oxide or a nitride. At least one of the protective layer 80 is selected from the group consisting of Si0 2 , Si x O y , Si 3 N 4 , Si x N y , SiO x N y , Al 2 O 3 , TiO 2 , AlN, and the like. Can be formed.
- the support substrate 50 can be implemented as a conductive, the power to the light emitting structure 10 by an external power source connected to the support substrate 50 Can be applied. Power may be applied to the second conductive semiconductor layer 13 through the support substrate 50.
- the second electrode electrically connected to the second conductivity type semiconductor layer 13 may include the ohmic contact layer 23, the reflective layer 30, the bonding layer 40, and the support substrate ( 50) may be included.
- the light emitting structure 10 may be grown on a GaAs growth substrate, and the light emitting structure 10 may be grown on an AlGaInP composition.
- the first window layer 15 may be formed of a GaP composition.
- the first window layer 15 may have a tensile strain of 20,000 to 30,000 ppm based on the GaAs growth substrate due to the lattice constant difference between the two layers. strain) is generated and there is a problem that the light emitting structure 10 may be damaged.
- the light emitting device may further include the tensile strain barrier layer 95 to prevent the light emitting structure 10 from being damaged.
- the tensile strain barrier layer 95 may be formed of a material having a tensile strain force between the growth substrate and the first window layer 15.
- the tensile strain barrier layer 95 may be provided as GaInP.
- the light emitting device may further include the energy buffer layer 90 whose energy band gap is changed according to the distance from the light emitting structure 10.
- the energy buffer layer 90 may include an AlGaInP composition.
- the energy band gap of the energy buffer layer 90 may change according to a change in the composition ratio of Al.
- the first region 91 may be provided to have a constant Al composition.
- the second region 92 may be provided such that an energy band gap decreases as the second region 92 moves away from the first region 91.
- the second region 92 may be provided such that the Al composition gradually decreases from the first region 91 so that an energy band gap becomes smaller.
- the first region 91 may include (Al x Ga (1-x) ) 0.5 In 0.5 P (0.5 ⁇ x ⁇ 0.9), and the second region 92 may include (Al x Ga (1). -x) ) 0.5 In 0.5 P (0.1 ⁇ x ⁇ 0.5) can be implemented.
- the section adjacent to the first region 91 is provided with the same Al composition as the first region 91, and gradually decreases as the distance from the first region 91 increases. Can be provided to be small.
- the energy band gap of the energy buffer layer 90 may be sequentially changed to prevent the loss of holes moving in the direction of the first window layer 15 from the direction of the active layer 12.
- the embodiment it is possible to reduce the operating voltage by improving the movement of the hole in this way.
- the operating voltage was 2.24 V
- an operating voltage of 1.96 V was measured.
- the first conductivity type semiconductor layer 11 may be implemented with Al 0.5 In 0.5 P (energy band gap: 2.52 eV), and the active layer 12 may have (Al 0.1 Ga 0.9 ) 0.5 In 0.5 P (energy band). A gap layer of 1.97 eV) and a barrier layer of (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P (energy band gap: 2.34 eV), and the second conductive semiconductor layer 13 is made of Al 0.5 In 0.5 P. (Energy bandgap: 2.52eV).
- the first region 91 of the energy buffer layer 90 is implemented as (Al 0.85 Ga 0.15 ) 0.5 In 0.5 P (energy band gap: 2.43 eV), and the second region 92 of the energy buffer layer 90 is formed.
- the lowest energy bandgap of the energy buffer layer 90 may be provided larger than the energy bandgap of the well layer constituting the active layer 12 and smaller than the energy bandgap of the window layer 15.
- the energy band gap of the tensile strain barrier layer 95 may be provided larger than the energy band gap of the well layer constituting the active layer 12 and smaller than the energy band gap of the window layer 15. This is to prevent light loss due to light absorption in the region when the semiconductor layer having a smaller energy band gap is formed than the well layer constituting the active layer 12.
- the first window layer 15 includes a Group 3 or Group 5 element as a fraction
- the second window layer 16 includes a Group 4 element as an impurity. can do.
- the first window layer 15 may include Si or Mg elements as impurities
- the second window layer 16 may include C elements as impurities.
- the doping concentration of the first window layer 15 is 5 ⁇ 10 16 / cm 3 to 1 ⁇ 10 18 / cm 3
- the doping concentration of the second window layer 16 is 5 ⁇ 10 18 / cm 3 to It can be provided at 1 ⁇ 10 20 / cm 3.
- the first window layer 15 may be provided in a thickness of 2,000 nanometers to 5,000 nanometers
- the second window layer 16 may be provided in a thickness of 200 nanometers to 500 nanometers.
- the second window layer 16 since the second window layer 16 includes a high concentration of impurities, good ohmic contact with the ohmic contact layer 23 may be realized. Accordingly, the light emitting device according to the embodiment can lower the operating voltage.
- the light emitting device for example, by adding C element other than Mg element as an impurity, it is possible to prevent the light drop phenomenon due to Mg element diffusion.
- the etch stop layer 7 the first conductivity type semiconductor layer 11, the active layer 12, and the second conductivity type on the substrate 5.
- the semiconductor layer 13, the energy buffer layer 90, the tensile strain barrier layer 95, the impurity trap layer 17, the first window layer 15, and the second window layer 16 may be formed.
- the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 may be defined as a light emitting structure 10.
- the energy buffer layer 90 may be formed on the light emitting structure 10.
- the energy buffer layer 90 may include a region where an energy band gap is changed according to a distance from the light emitting structure 10. 22 illustrates an energy band gap of a semiconductor layer applied to a light emitting device according to the embodiment.
- the energy buffer layer 90 may include a first region 91 and a second region 92.
- the energy band gap may be uniformly provided in the first region 91 according to the distance from the light emitting structure 10.
- the second region 92 may be provided such that an energy band gap gradually decreases according to a distance from the first region 91.
- the impurity trap layer 17 may be formed of a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1).
- the impurity trap layer 17 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, or the like.
- the first window layer 15 may be formed of a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1).
- the first window layer 15 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, or the like.
- the window layer 15 may provide a current spreading effect when the light emitting device is driven.
- the second window layer 16 may be formed of a semiconductor material having a compositional formula of (Al x Ga 1-x ) y In 1-y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1).
- the second window layer 15 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, or the like.
- the window layer 16 may be implemented to include a higher concentration of impurities than the first window layer 15.
- the C element may be added using an organic compound bonded with Ga element and CH 3 .
- an organic material supplied to a conventional Ga source can be used, and by setting the growth temperature low (for example, 630 ° C.), the element C can be added as a high concentration of impurities.
- an ODR layer 21, an ohmic contact layer 23, and a reflective layer 30 may be formed on the second window layer 16.
- the ODR layer 21 may perform a function of reflecting incident light again.
- the ODR layer 21 may be implemented to have a lower refractive index than the light emitting structure 10.
- the ODR layer 21 may be selected to have a low refractive index having a large difference from the refractive index of the material of the light emitting structure 10, thereby providing a reflective function.
- the ODR layer 21 may be disposed in contact with the second window layer 16.
- the ODR layer 21 may be implemented to have a lower refractive index than the second window layer 16.
- the ODR layer 21 may be implemented to have a lower refractive index than the first window layer 11.
- the ohmic contact layer 23 may be implemented to be in ohmic contact with the second window layer 16.
- the ohmic contact layer 23 may include an area in ohmic contact with the second window layer 16.
- the ohmic contact layer 23 may be electrically connected to the light emitting structure 10.
- the ohmic contact layer 23 may be disposed through the ODR layer 21.
- the ohmic contact layer 23 may be implemented to have an upper surface of a circle or ellipse shape.
- the ohmic contact layer 23 may include at least one selected from materials such as Au, Au / AuBe / Au, AuZn, ITO, AuBe, and GeAu.
- the reflective layer 30 may be disposed on the ohmic contact layer 23.
- the reflective layer 30 may be disposed on the ODR layer 21.
- the reflective layer 30 may perform a function of reflecting incident light again.
- the reflective layer 30 may include at least one selected from materials such as Ag, Au, and Al.
- a bonding layer 40 and a support substrate 50 may be provided on the reflective layer 30.
- a first electrode 60 is formed on the light emitting structure 10, and isolation etching is performed to etch the side surface of the light emitting structure 10.
- a protective layer 80 and an electrode pad 70 may be formed on the light emitting structure 10 and the first electrode 60.
- the light emitting device manufacturing method described above may be modified and implemented according to the process design as needed.
- the light emitting structure 10 may be grown on a GaAs growth substrate, and the light emitting structure 10 may be grown on an AlGaInP composition.
- the window layer 15 may be formed of a GaP composition.
- the window layer 15 may have a tensile strain of 20,000 to 30,000 ppm based on the GaAs growth substrate due to the difference in lattice constant between the two layers. There is a problem that the light emitting structure 10 may be damaged.
- the light emitting device may further include the tensile strain barrier layer 95 to prevent the light emitting structure 10 from being damaged.
- the tensile strain barrier layer 95 may be formed of a material having a tensile strain force between the growth substrate and the window layer 15.
- the tensile strain barrier layer 95 may be provided as GaInP.
- the light emitting device may further include the energy buffer layer 90 whose energy band gap is changed according to the distance from the light emitting structure 10.
- the energy buffer layer 90 may include an AlGaInP composition.
- the energy band gap of the energy buffer layer 90 may change according to a change in the composition ratio of Al.
- the first region 91 may be provided to have a constant Al composition.
- the second region 92 may be provided such that an energy band gap decreases as the second region 92 moves away from the first region 91.
- the second region 92 may be provided such that the Al composition gradually decreases from the first region 91 so that an energy band gap becomes smaller.
- the second region 92 is provided such that the section adjacent to the first region 91 has an Al composition of 0.85, and gradually decreases away from the first region 91, and has a small Al composition of 0.3. Can be.
- the energy band gap of the energy buffer layer 90 may be sequentially changed to prevent the loss of holes moving in the direction of the window layer 15 from the direction of the active layer 12.
- the embodiment it is possible to reduce the operating voltage by improving the movement of the hole in this way.
- the operating voltage was 2.24 V
- an operating voltage of 1.96 V was measured.
- the first conductivity type semiconductor layer 11 may be implemented with Al 0.5 In 0.5 P (energy band gap: 2.52 eV), and the active layer 12 may have (Al 0.1 Ga 0.9 ) 0.5 In 0.5 P (energy band). A gap layer of 1.97 eV) and a barrier layer of (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P (energy band gap: 2.34 eV), and the second conductive semiconductor layer 13 is made of Al 0.5 In 0.5 P. (Energy bandgap: 2.52eV).
- the first region 91 of the energy buffer layer 90 is implemented as (Al 0.85 Ga 0.15 ) 0.5 In 0.5 P (energy band gap: 2.43 eV), and the second region 92 of the energy buffer layer 90 is formed.
- the lowest energy bandgap of the energy buffer layer 90 may be provided larger than the energy bandgap of the well layer constituting the active layer 12 and smaller than the energy bandgap of the first window layer 15. have.
- the energy bandgap of the tensile strain barrier layer 95 may be provided larger than the energy bandgap of the well layer constituting the active layer 12 and smaller than the energy bandgap of the first window layer 15. This is to prevent light loss due to light absorption in the region when the semiconductor layer having a smaller energy band gap is formed than the well layer constituting the active layer 12.
- the first window layer 15 includes a Group 3 or Group 5 element as a fraction
- the second window layer 16 includes a Group 4 element as an impurity. can do.
- the first window layer 15 may include Si or Mg elements as impurities
- the second window layer 16 may include C elements as impurities.
- the doping concentration of the first window layer 15 is 5 ⁇ 10 16 / cm 3 to 1 ⁇ 10 18 / cm 3
- the doping concentration of the second window layer 16 is 5 ⁇ 10 18 / cm 3 to It can be provided at 1 ⁇ 10 20 / cm 3.
- the first window layer 15 may be provided in a thickness of 2,000 nanometers to 5,000 nanometers
- the second window layer 16 may be provided in a thickness of 200 nanometers to 500 nanometers.
- the second window layer 16 since the second window layer 16 includes a high concentration of impurities, good ohmic contact with the ohmic contact layer 23 may be realized. Accordingly, the light emitting device according to the embodiment can lower the operating voltage.
- the light emitting device for example, by adding C element other than Mg element as an impurity, it is possible to prevent the light drop phenomenon due to Mg element diffusion.
- FIG. 27 is a view showing a light emitting device package to which the light emitting device according to the embodiment is applied.
- the light emitting device package may include a body 120, a first lead electrode 131 and a second lead electrode 132 disposed on the body 120, and the body 120.
- the light emitting device 100 according to the embodiment which is provided to and electrically connected to the first lead electrode 131 and the second lead electrode 132, and the molding member 140 surrounding the light emitting device 100. It may include.
- the body 120 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.
- the first lead electrode 131 and the second lead electrode 132 are electrically separated from each other, and provide power to the light emitting device 100.
- the first lead electrode 131 and the second lead electrode 132 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.
- the light emitting device 100 may be disposed on the body 120 or on the first lead electrode 131 or the second lead electrode 132.
- the light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by any one of a wire method, a flip chip method, and a die bonding method.
- the molding member 140 may surround the light emitting device 100 to protect the light emitting device 100.
- the molding member 140 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.
- a plurality of light emitting devices or light emitting device packages may be arranged on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package.
- the light emitting device package, the substrate, and the optical member may function as a light unit.
- the light unit may be implemented in a top view or a side view type, and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to an illumination device and a pointing device.
- Yet another embodiment may be implemented as a lighting device including the light emitting device or the light emitting device package described in the above embodiments.
- the lighting device may include a lamp, a street lamp, a signboard, a headlamp.
- the light emitting device may be applied to the light unit.
- the light unit may include a structure in which a plurality of light emitting elements are arranged, and may include the display device illustrated in FIGS. 28 and 29 and the illumination device illustrated in FIG. 30.
- the display device 1000 includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051.
- the bottom cover 1011 may be included, but is not limited thereto.
- the bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 may be defined as a light unit 1050.
- the light guide plate 1041 diffuses light to serve as a surface light source.
- the light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.
- PMMA polymethyl metaacrylate
- PET polyethylene terephthlate
- PC polycarbonate
- COC cycloolefin copolymer
- PEN polyethylene naphthalate
- the light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.
- At least one light emitting module 1031 may be provided, and may provide light directly or indirectly at one side of the light guide plate 1041.
- the light emitting module 1031 may include a substrate 1033 and a light emitting device or a light emitting device package 200 according to the embodiment described above.
- the light emitting device package 200 may be arranged on the substrate 1033 at predetermined intervals.
- the substrate 1033 may be a printed circuit board (PCB) including a circuit pattern.
- the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto.
- MCPCB Metal Core PCB
- FPCB Flexible PCB
- the substrate 1033 may be removed.
- a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.
- the plurality of light emitting device packages 200 may be mounted such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto.
- the light emitting device package 200 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.
- the reflective member 1022 may be disposed under the light guide plate 1041.
- the reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward.
- the reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.
- the reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.
- the bottom cover 1011 may accommodate the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with an accommodating part 1012 having a box shape having an upper surface opened thereto, but is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.
- the bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding.
- the bottom cover 1011 may include a metal or non-metal material having good thermal conductivity, but is not limited thereto.
- the display panel 1061 is, for example, an LCD panel and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates.
- a polarizer may be attached to at least one surface of the display panel 1061, but the polarizer is not limited thereto.
- the display panel 1061 displays information by light passing through the optical sheet 1051.
- the display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.
- the optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet.
- the optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet.
- the diffusion sheet diffuses the incident light
- the horizontal and / or vertical prism sheet focuses the incident light into the display area
- the brightness enhancement sheet reuses the lost light to improve the brightness.
- a protective sheet may be disposed on the display panel 1061, but is not limited thereto.
- the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.
- 29 is a diagram illustrating another example of a display device according to an exemplary embodiment.
- the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the light emitting device 100 disclosed above is arranged, an optical member 1154, and a display panel 1155.
- the substrate 1020 and the light emitting device package 200 may be defined as a light emitting module 1060.
- the bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.
- the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet.
- the light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed.
- the diffusion sheet diffuses the incident light
- the horizontal and vertical prism sheets focus the incident light onto the display area
- the brightness enhancement sheet reuses the lost light to improve the brightness.
- the optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.
- FIG. 30 is a view showing a lighting apparatus according to an embodiment.
- the lighting apparatus may include a cover 2100, a light source module 2200, a heat radiator 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. Can be.
- the lighting apparatus according to the embodiment may further include any one or more of the member 2300 and the holder 2500.
- the light source module 2200 may include a light emitting device package according to an embodiment.
- the cover 2100 may have a shape of a bulb or hemisphere, may be hollow, and may be provided in an open shape.
- the cover 2100 may be optically coupled to the light source module 2200.
- the cover 2100 may diffuse, scatter or excite the light provided from the light source module 2200.
- the cover 2100 may be a kind of optical member.
- the cover 2100 may be coupled to the heat sink 2400.
- the cover 2100 may have a coupling part coupled to the heat sink 2400.
- An inner surface of the cover 2100 may be coated with a milky paint.
- the milky paint may include a diffuser to diffuse light.
- the surface roughness of the inner surface of the cover 2100 may be greater than the surface roughness of the outer surface of the cover 2100. This is for the light from the light source module 2200 to be sufficiently scattered and diffused to be emitted to the outside.
- the cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like.
- polycarbonate is excellent in light resistance, heat resistance, and strength.
- the cover 2100 may be transparent and opaque so that the light source module 2200 is visible from the outside.
- the cover 2100 may be formed through blow molding.
- the light source module 2200 may be disposed on one surface of the heat sink 2400. Thus, heat from the light source module 2200 is conducted to the heat sink 2400.
- the light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.
- the member 2300 is disposed on an upper surface of the heat dissipator 2400, and has a plurality of light source parts 2210 and guide grooves 2310 into which the connector 2250 is inserted.
- the guide groove 2310 corresponds to the board and the connector 2250 of the light source unit 2210.
- the surface of the member 2300 may be coated or coated with a light reflective material.
- the surface of the member 2300 may be coated or coated with a white paint.
- the member 2300 is reflected on the inner surface of the cover 2100 to reflect the light returned to the light source module 2200 side again toward the cover 2100. Therefore, it is possible to improve the light efficiency of the lighting apparatus according to the embodiment.
- the member 2300 may be made of an insulating material, for example.
- the connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact may be made between the radiator 2400 and the connection plate 2230.
- the member 2300 may be formed of an insulating material to block an electrical short between the connection plate 2230 and the radiator 2400.
- the radiator 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to radiate heat.
- the holder 2500 may block the accommodating groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 accommodated in the insulating unit 2710 of the inner case 2700 is sealed.
- the holder 2500 has a guide protrusion 2510.
- the guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.
- the power supply unit 2600 processes or converts an electrical signal provided from the outside to provide the light source module 2200.
- the power supply unit 2600 is accommodated in the accommodating groove 2725 of the inner case 2700, and is sealed in the inner case 2700 by the holder 2500.
- the power supply unit 2600 may include a protrusion 2610, a guide unit 2630, a base 2650, and an extension unit 2670.
- the guide part 2630 has a shape protruding outward from one side of the base 2650.
- the guide part 2630 may be inserted into the holder 2500.
- a plurality of parts may be disposed on one surface of the base 2650.
- the plurality of components may include, for example, a DC converter for converting AC power provided from an external power source into DC power, a driving chip for controlling the driving of the light source module 2200, and an ESD for protecting the light source module 2200. (ElectroStatic discharge) protection element and the like, but may not be limited thereto.
- the extension part 2670 has a shape protruding outward from the other side of the base 2650.
- the extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside.
- the extension part 2670 may be provided to be equal to or smaller than the width of the connection part 2750 of the inner case 2700.
- Each end of the "+ wire” and the “-wire” may be electrically connected to the extension 2670, and the other end of the "+ wire” and the “-wire” may be electrically connected to the socket 2800. .
- the inner case 2700 may include a molding unit together with the power supply unit 2600 therein.
- the molding part is a part where the molding liquid is hardened, so that the power supply part 2600 can be fixed inside the inner case 2700.
Abstract
Description
Claims (25)
- 제1 도전형 반도체층, 상기 제1 도전형 반도체층 아래에 배치된 활성층, 상기 활성층 아래에 배치된 제2 도전형 반도체층을 포함하는 발광구조물;상기 발광구조물 위에 배치되며 복수의 관통홀을 포함하는 보호층;상기 복수의 관통홀 내에 각각 제공되어 상기 제1 도전형 반도체층에 전기적으로 연결된 복수의 금속 점(dot)을 포함하는 제1 전극;상기 제1 전극을 구성하는 상기 복수의 금속 점을 전기적으로 연결시키고, 제1 영역은 상기 제1 전극 위에 배치되고 제2 영역은 상기 보호층 위에 배치된 전극패드;상기 제2 도전형 반도체층에 전기적으로 연결된 제2 전극;을 포함하는 발광소자.
- 제1항에 있어서,상기 제1 전극은 서로 이격되어 배치된 제1 영역과 제2 영역을 포함하고, 상기 전극패드는 상기 제1 영역 및 상기 제2 영역과 전기적으로 연결된 발광소자.
- 제1항에 있어서,상기 제1 도전형 반도체층은 상부면에 제공된 광 추출 구조를 포함하는 발광소자.
- 제1항에 있어서,상기 제1 전극의 금속 점의 폭은 4 마이크로 미터 내지 5 마이크로 미터인 발광소자.
- 제1항에 있어서,상기 보호층의 굴절률은 상기 제1 도전형 반도체층의 굴절률에 비해 더 작은 값을 갖는 발광소자.
- 제1항에 있어서,상기 제1 전극은 메인 전극과 상기 메인 전극에서 연장된 주변 전극을 포함하고, 상기 메인 전극과 상기 주변 전극이 상기 보호층의 관통 영역 내에 배치된 발광소자.
- 제1항에 있어서,상기 전극패드의 제2 영역 아래에 배치된 제1 보호층의 굴절률이 상기 전극패드가 배치되지 않은 영역에 제공된 제2 보호층의 굴절률에 비해 더 작은 값을 갖는 발광소자.
- 제7항에 있어서,상기 제1 보호층은 산화물을 포함하고, 상기 제2 보호층은 질화물을 포함하는 발광소자.
- 제1 도전형 반도체층, 상기 제1 도전형 반도체층 아래에 배치된 활성층, 상기 활성층 아래에 배치된 제2 도전형 반도체층을 포함하는 발광구조물;상기 발광구조물 아래에 배치되며, 상기 발광구조물로부터의 거리에 따라 에너지 밴드갭이 일정한 제1 영역과, 상기 제1 영역으로부터의 거리에 따라 에너지 밴드갭이 점차적으로 작아지는 제2 영역을 포함하는 에너지 버퍼층;상기 에너지 버퍼층 아래에 배치되며 상기 제2 영역의 에너지 밴드갭에 비하여 작거나 같은 에너지 밴드갭을 갖는 인장변형 배리어층;상기 인장변형 배리어층 아래에 배치된 윈도우층;을 포함하는 발광소자.
- 제9항에 있어서,상기 에너지 버퍼층은 Al의 조성비 변화에 따라 에너지 밴드갭이 변화되는 발광소자.
- 제9항에 있어서,상기 윈도우층은 GaP 조성을 포함하고, 상기 인장변형 배리어층은 GaInP 조성을 포함하고, 상기 에너지 버퍼층은 AlGaInP 조성을 포함하는 발광소자.
- 제9항에 있어서,상기 제1 영역은 (AlxGa(1-x))0.5In0.5P (x=0.85) 조성을 포함하고, 상기 제2 영역은 (AlxGa(1-x))0.5In0.5P (0.85≤x≤0.3) 조성을 포함하는 발광소자.
- 제9항에 있어서,상기 에너지 버퍼층의 가장 낮은 에너지 밴드갭이 상기 활성층을 이루는 우물층의 에너지 밴드갭보다 크고 상기 윈도우층의 에너지 밴드갭보다 작은 발광소자.
- 제9항에 있어서,상기 인장변형 배리어층의 에너지 밴드갭이 상기 활성층을 이루는 우물층의 에너지 밴드갭보다 크고 상기 윈도우층의 에너지 밴드갭보다 작은 발광소자.
- 제9항에 있어서,상기 발광구조물 위에 배치되며, 상기 제1 도전형 반도체층에 전기적으로 연결된 제1 전극;상기 제1 전극에 전기적으로 연결된 전극패드;상기 발광구조물 아래에 배치되며, 상기 제2 도전형 반도체층에 전기적으로 연결된 제2 전극;을 포함하는 발광소자.
- 제9항에 있어서,상기 에너지 버퍼층의 두께는 180 나노미터 내지 250 나노미터인 발광소자.
- 제9항에 있어서,상기 에너지 버퍼층이 상기 인장변형 배리어층에 비해 더 두꺼운 발광소자.
- 제1 도전형 반도체층, 상기 제1 도전형 반도체층 아래에 배치된 활성층, 상기 활성층 아래에 배치된 제2 도전형 반도체층을 포함하는 발광구조물;상기 발광구조물 아래에 배치되며, 상기 제2 도전형 반도체층에 포함된 불순물과 같은 불순물을 포함하는 제1 윈도우층;상기 제1 윈도우층 아래에 배치되며, 상기 제1 윈도우층에 포함된 불순물과 다른 불순물을 포함하고, 상기 제1 윈도우층에 비해 불순물 농도가 더 높은 제2 윈도우층;상기 발광구조물 위에 배치되며 상기 제1 도전형 반도체층에 전기적으로 연결된 제1 전극;상기 제2 윈도우층 아래에 배치되며 상기 제2 도전형 반도체층에 전기적으로 연결된 제2 전극;을 포함하는 발광소자.
- 제18항에 있어서,상기 발광구조물과 상기 제1 윈도우층 사이에 배치되며, 상기 제1 윈도우층에 포함된 불순물이 상기 발광구조물로 확산되는 것을 방지하는 불순물 트랩층을 포함하는 발광소자.
- 제18항에 있어서,상기 제1 윈도우층은 3족 또는 5족 원소를 불순물로 포함하고, 상기 제2 윈도우층은 4족 원소를 불순물로 포함하는 발광소자.
- 제18항에 있어서,상기 제1 윈도우층은 Mg 원소를 불순물로 포함하고 상기 제2 윈도우층은 C 원소를 불순물로 포함하는 발광소자.
- 제18항에 있어서,상기 제1 윈도우층의 도핑 농도는 5×1016/㎤ 내지 1×1018/㎤ 이고, 상기 제2 윈도우층의 도핑 농도는 5×1018/㎤ 내지 1×1020/㎤ 인 발광소자.
- 제18항에 있어서,상기 제1 윈도우층은 2,000 나노미터 내지 5,000 나노미터의 두께로 제공되고, 상기 제2 윈도우층은 200 나노미터 내지 500 나노미터의 두께로 제공된 발광소자.
- 제18항에 있어서,상기 발광구조물과 상기 제1 윈도우층 사이에 배치되며, 상기 발광구조물로부터의 거리에 따라 에너지 밴드갭이 변화되는 영역을 갖는 에너지 버퍼층을 포함하는 발광소자.
- 제24항에 있어서,상기 에너지 버퍼층은, 상기 발광구조물로부터의 거리에 따라 에너지 밴드갭이 일정한 제1 영역과, 상기 제1 영역으로부터의 거리에 따라 에너지 밴드갭이 점차적으로 작아지는 제2 영역을 포함하는 발광소자.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/309,544 US10043947B2 (en) | 2014-05-08 | 2015-04-29 | Light emitting device |
JP2016565155A JP6285573B2 (ja) | 2014-05-08 | 2015-04-29 | 発光素子 |
CN201580024089.8A CN106463578B (zh) | 2014-05-08 | 2015-04-29 | 发光器件 |
EP15788643.3A EP3142157B1 (en) | 2014-05-08 | 2015-04-29 | Light emitting device |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140054684A KR102187493B1 (ko) | 2014-05-08 | 2014-05-08 | 발광소자 |
KR10-2014-0054684 | 2014-05-08 | ||
KR1020140057693A KR102163984B1 (ko) | 2014-05-14 | 2014-05-14 | 발광소자 |
KR10-2014-0057696 | 2014-05-14 | ||
KR10-2014-0057693 | 2014-05-14 | ||
KR1020140057696A KR102187496B1 (ko) | 2014-05-14 | 2014-05-14 | 발광소자 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015170848A1 true WO2015170848A1 (ko) | 2015-11-12 |
Family
ID=54392666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2015/004307 WO2015170848A1 (ko) | 2014-05-08 | 2015-04-29 | 발광소자 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10043947B2 (ko) |
EP (1) | EP3142157B1 (ko) |
JP (1) | JP6285573B2 (ko) |
CN (1) | CN106463578B (ko) |
WO (1) | WO2015170848A1 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017101637A1 (de) * | 2017-01-27 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102017104719A1 (de) * | 2017-03-07 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper und Halbleiterchip |
US10312414B1 (en) * | 2017-12-01 | 2019-06-04 | Innolux Corporation | Light emitting unit and display device |
US11227978B2 (en) | 2018-11-12 | 2022-01-18 | Epistar Corporation | Semiconductor device and package structure |
JP7360822B2 (ja) | 2019-06-13 | 2023-10-13 | ローム株式会社 | 半導体発光装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100023274A (ko) * | 2008-08-21 | 2010-03-04 | 서울옵토디바이스주식회사 | 알루미늄 반사 구조를 구비한 자외선 발광 다이오드 및 그 제조방법 |
KR20110083292A (ko) * | 2010-01-14 | 2011-07-20 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
JP2012134280A (ja) * | 2010-12-21 | 2012-07-12 | Hitachi Cable Ltd | 半導体発光素子及びその製造方法 |
KR20120137181A (ko) * | 2011-06-10 | 2012-12-20 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
KR20130106675A (ko) * | 2012-03-20 | 2013-09-30 | 서울반도체 주식회사 | 질화갈륨 기판을 갖는 발광 다이오드 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5060028A (en) | 1989-01-19 | 1991-10-22 | Hewlett-Packard Company | High band-gap opto-electronic device |
KR19980052506U (ko) | 1996-12-31 | 1998-10-07 | 박병재 | 리어 적재함 구동장치 |
JP3817322B2 (ja) | 1997-03-13 | 2006-09-06 | ローム株式会社 | 半導体発光素子 |
US20020104997A1 (en) | 2001-02-05 | 2002-08-08 | Li-Hsin Kuo | Semiconductor light emitting diode on a misoriented substrate |
JP3921989B2 (ja) | 2001-10-19 | 2007-05-30 | 日亜化学工業株式会社 | 半導体発光素子 |
JP2004140074A (ja) | 2002-10-16 | 2004-05-13 | Toshiba Corp | 半導体発光素子 |
JP4367393B2 (ja) | 2005-09-30 | 2009-11-18 | 日立電線株式会社 | 透明導電膜を備えた半導体発光素子 |
JP5016808B2 (ja) | 2005-11-08 | 2012-09-05 | ローム株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
KR101125339B1 (ko) * | 2006-02-14 | 2012-03-27 | 엘지이노텍 주식회사 | 질화물계 반도체 발광소자 및 그 제조 방법 |
JP5176334B2 (ja) * | 2007-02-01 | 2013-04-03 | 日亜化学工業株式会社 | 半導体発光素子 |
JP2008288248A (ja) * | 2007-05-15 | 2008-11-27 | Hitachi Cable Ltd | 半導体発光素子 |
WO2009010762A1 (en) * | 2007-07-19 | 2009-01-22 | Photonstar Led Limited | Vertical led with conductive vias |
KR100975659B1 (ko) | 2007-12-18 | 2010-08-17 | 포항공과대학교 산학협력단 | 발광 소자 및 그 제조 방법 |
CN103715318A (zh) * | 2008-02-15 | 2014-04-09 | 克里公司 | 用于提供白色光输出的宽带发光器件灯 |
JP2010206133A (ja) | 2009-03-06 | 2010-09-16 | Sony Corp | 発光素子とその製造方法、及び電子機器 |
US8017958B2 (en) | 2009-06-30 | 2011-09-13 | Koninklijke Philips Electronics N.V. | P-contact layer for a III-P semiconductor light emitting device |
JP2011023504A (ja) | 2009-07-15 | 2011-02-03 | Hitachi Cable Ltd | 半導体発光素子、及び半導体発光素子の製造方法 |
US7713776B1 (en) | 2009-08-13 | 2010-05-11 | Ray-Hua Horng | Method of making a light emitting diode |
KR101039931B1 (ko) | 2009-10-21 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
TWI697133B (zh) * | 2010-02-09 | 2020-06-21 | 晶元光電股份有限公司 | 光電元件 |
JP5793292B2 (ja) | 2010-02-17 | 2015-10-14 | 豊田合成株式会社 | 半導体発光素子 |
JP5284300B2 (ja) * | 2010-03-10 | 2013-09-11 | 株式会社東芝 | 半導体発光素子、およびそれを用いた照明装置、ならびに半導体発光素子の製造方法 |
JP5725927B2 (ja) * | 2010-05-18 | 2015-05-27 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 高効率発光ダイオード及びその製造方法 |
KR101646664B1 (ko) * | 2010-05-18 | 2016-08-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 |
JP2012028381A (ja) * | 2010-07-20 | 2012-02-09 | Sharp Corp | 半導体発光素子およびその製造方法 |
US8426844B2 (en) * | 2010-08-04 | 2013-04-23 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package, and display device therewith |
US8664684B2 (en) * | 2010-08-31 | 2014-03-04 | Micron Technology, Inc. | Solid state lighting devices with improved contacts and associated methods of manufacturing |
CN101984511B (zh) * | 2010-11-10 | 2016-06-01 | 秦彪 | Led芯片和led晶片及芯片制造方法 |
JP5095840B2 (ja) | 2011-04-26 | 2012-12-12 | 株式会社東芝 | 半導体発光素子 |
JP5935178B2 (ja) | 2011-09-08 | 2016-06-15 | ローム株式会社 | 半導体発光素子 |
JP5720601B2 (ja) * | 2012-02-14 | 2015-05-20 | 豊田合成株式会社 | 半導体発光素子 |
JP5694215B2 (ja) | 2012-03-07 | 2015-04-01 | 株式会社東芝 | 半導体発光素子 |
JP5957358B2 (ja) * | 2012-10-16 | 2016-07-27 | 昭和電工株式会社 | 発光ダイオード、発光ダイオードランプ及び照明装置 |
TWI520378B (zh) * | 2012-10-22 | 2016-02-01 | 錸鑽科技股份有限公司 | 覆晶式發光二極體及其應用 |
JP5900284B2 (ja) * | 2012-10-25 | 2016-04-06 | 豊田合成株式会社 | 半導体発光素子および発光装置 |
-
2015
- 2015-04-29 US US15/309,544 patent/US10043947B2/en active Active
- 2015-04-29 JP JP2016565155A patent/JP6285573B2/ja active Active
- 2015-04-29 WO PCT/KR2015/004307 patent/WO2015170848A1/ko active Application Filing
- 2015-04-29 CN CN201580024089.8A patent/CN106463578B/zh active Active
- 2015-04-29 EP EP15788643.3A patent/EP3142157B1/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100023274A (ko) * | 2008-08-21 | 2010-03-04 | 서울옵토디바이스주식회사 | 알루미늄 반사 구조를 구비한 자외선 발광 다이오드 및 그 제조방법 |
KR20110083292A (ko) * | 2010-01-14 | 2011-07-20 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
JP2012134280A (ja) * | 2010-12-21 | 2012-07-12 | Hitachi Cable Ltd | 半導体発光素子及びその製造方法 |
KR20120137181A (ko) * | 2011-06-10 | 2012-12-20 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
KR20130106675A (ko) * | 2012-03-20 | 2013-09-30 | 서울반도체 주식회사 | 질화갈륨 기판을 갖는 발광 다이오드 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3142157A4 * |
Also Published As
Publication number | Publication date |
---|---|
JP2017518633A (ja) | 2017-07-06 |
EP3142157A1 (en) | 2017-03-15 |
US20170155017A1 (en) | 2017-06-01 |
CN106463578A (zh) | 2017-02-22 |
CN106463578B (zh) | 2019-11-22 |
EP3142157B1 (en) | 2020-03-25 |
EP3142157A4 (en) | 2018-01-03 |
JP6285573B2 (ja) | 2018-02-28 |
US10043947B2 (en) | 2018-08-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2017217703A1 (en) | Display apparatus and manufacturing method thereof | |
WO2017065545A1 (en) | Compact light emitting diode chip and light emitting device including the same | |
WO2017191923A1 (ko) | 발광 다이오드 | |
WO2018117382A1 (ko) | 고 신뢰성 발광 다이오드 | |
WO2019054547A1 (ko) | 발광소자 패키지 및 이를 포함하는 조명장치 | |
WO2016076637A1 (en) | Light emitting device | |
WO2017183944A1 (ko) | 발광소자 및 이를 포함하는 표시장치 | |
WO2015163556A1 (ko) | 조명 장치 | |
WO2017191966A1 (ko) | 반도체 소자 패키지 | |
WO2015156588A1 (ko) | 발광소자 및 조명시스템 | |
WO2017030396A1 (ko) | 발광 소자, 이 소자를 포함하는 발광 소자 패키지 및 이 패키지를 포함하는 발광 장치 | |
WO2017142349A1 (ko) | 광학 렌즈, 및 이를 구비한 라이트 유닛 및 조명 장치 | |
WO2017135801A1 (ko) | 광원 유닛 및 이를 구비한 라이트 유닛 | |
WO2016013831A1 (ko) | 광원 모듈과 이를 구비한 표시 모듈, 장신구 및 미러 | |
WO2016032167A1 (ko) | 발광 소자 패키지 | |
WO2019045167A1 (ko) | 발광소자 패키지 및 이를 구비한 광원 장치 | |
WO2015170848A1 (ko) | 발광소자 | |
WO2018106030A1 (ko) | 발광소자 | |
WO2016190651A1 (ko) | 광학 렌즈, 조명 모듈 및 이를 구비한 라이트 유닛 | |
WO2015020358A1 (ko) | 발광소자 | |
WO2018044102A1 (ko) | 칩 스케일 패키지 발광 다이오드 | |
WO2018110982A1 (ko) | 반도체 소자 패키지 및 그 제조방법 | |
WO2017034356A1 (ko) | 발광소자 및 이를 포함하는 발광소자 패키지 | |
WO2016117905A1 (ko) | 광원 모듈 및 조명 장치 | |
WO2012169717A1 (en) | Light emitting diode package |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15788643 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016565155 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15309544 Country of ref document: US |
|
REEP | Request for entry into the european phase |
Ref document number: 2015788643 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2015788643 Country of ref document: EP |