DE112014000439A5 - Optoelektronischer Halbleiterchip - Google Patents

Optoelektronischer Halbleiterchip Download PDF

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Publication number
DE112014000439A5
DE112014000439A5 DE112014000439.1T DE112014000439T DE112014000439A5 DE 112014000439 A5 DE112014000439 A5 DE 112014000439A5 DE 112014000439 T DE112014000439 T DE 112014000439T DE 112014000439 A5 DE112014000439 A5 DE 112014000439A5
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DE
Germany
Prior art keywords
semiconductor chip
optoelectronic semiconductor
optoelectronic
chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112014000439.1T
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English (en)
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DE112014000439B4 (de
Inventor
Tobias Meyer
Matthias Peter
Michaela Weber
Tobias Gotschke
Jürgen Off
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Publication of DE112014000439A5 publication Critical patent/DE112014000439A5/de
Application granted granted Critical
Publication of DE112014000439B4 publication Critical patent/DE112014000439B4/de
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE112014000439.1T 2013-01-15 2014-01-08 Optoelektronischer Halbleiterchip und Verfahren zum Herstellen eines optoelektronischen Halbleiterchips Active DE112014000439B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013200509.1 2013-01-15
DE102013200509.1A DE102013200509A1 (de) 2013-01-15 2013-01-15 Optoelektronischer Halbleiterchip
PCT/EP2014/050238 WO2014111298A1 (de) 2013-01-15 2014-01-08 Optoelektronischer halbleiterchip

Publications (2)

Publication Number Publication Date
DE112014000439A5 true DE112014000439A5 (de) 2015-10-15
DE112014000439B4 DE112014000439B4 (de) 2023-04-27

Family

ID=49949673

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102013200509.1A Withdrawn DE102013200509A1 (de) 2013-01-15 2013-01-15 Optoelektronischer Halbleiterchip
DE112014000439.1T Active DE112014000439B4 (de) 2013-01-15 2014-01-08 Optoelektronischer Halbleiterchip und Verfahren zum Herstellen eines optoelektronischen Halbleiterchips

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102013200509.1A Withdrawn DE102013200509A1 (de) 2013-01-15 2013-01-15 Optoelektronischer Halbleiterchip

Country Status (3)

Country Link
US (1) US20150349214A1 (de)
DE (2) DE102013200509A1 (de)
WO (1) WO2014111298A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014114109A1 (de) * 2014-09-29 2016-03-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von Halbleiterchips und Halbleiterchip
US9634187B2 (en) 2014-09-29 2017-04-25 Bridgelux, Inc. Flip chip light emitting diode having trnsparent material with surface features
DE102019103492A1 (de) * 2019-02-12 2020-08-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
DE102019112762A1 (de) * 2019-05-15 2020-11-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit vergrabenen dotierten bereichen und verfahren zur herstellung eines bauelements

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177145A (ja) 1999-12-21 2001-06-29 Toshiba Electronic Engineering Corp 半導体発光素子およびその製造方法
JP2002170989A (ja) 2000-12-04 2002-06-14 Sharp Corp 窒化物系化合物半導体発光素子
US6716821B2 (en) * 2001-12-21 2004-04-06 Immunogen Inc. Cytotoxic agents bearing a reactive polyethylene glycol moiety, cytotoxic conjugates comprising polyethylene glycol linking groups, and methods of making and using the same
US7361413B2 (en) 2002-07-29 2008-04-22 Lumimove, Inc. Electroluminescent device and methods for its production and use
KR100723233B1 (ko) * 2006-03-31 2007-05-29 삼성전기주식회사 백색 발광 소자
TWI309481B (en) * 2006-07-28 2009-05-01 Epistar Corp A light emitting device having a patterned substrate and the method thereof
JP2010087292A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd 発光素子
CN102804424A (zh) 2009-06-19 2012-11-28 塞伦光子学有限公司 发光二极管
JP2011040486A (ja) * 2009-08-07 2011-02-24 Sharp Corp 発光装置および画像表示装置
JP4949525B2 (ja) 2010-03-03 2012-06-13 シャープ株式会社 波長変換部材、発光装置および画像表示装置ならびに波長変換部材の製造方法
GB201012483D0 (en) * 2010-07-26 2010-09-08 Seren Photonics Ltd Light emitting diodes
DE102010046792A1 (de) 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102010051286A1 (de) * 2010-11-12 2012-05-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
TWI459592B (zh) 2011-04-26 2014-11-01 Univ Nat Chiao Tung 奈米級側向成長磊晶之薄膜發光二極體及其製作方法

Also Published As

Publication number Publication date
US20150349214A1 (en) 2015-12-03
WO2014111298A1 (de) 2014-07-24
DE102013200509A1 (de) 2014-07-17
DE112014000439B4 (de) 2023-04-27

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