DE112014004713A5 - Halbleiterlaser mit einseitig verbreiterter Ridgestruktur - Google Patents

Halbleiterlaser mit einseitig verbreiterter Ridgestruktur Download PDF

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Publication number
DE112014004713A5
DE112014004713A5 DE112014004713.9T DE112014004713T DE112014004713A5 DE 112014004713 A5 DE112014004713 A5 DE 112014004713A5 DE 112014004713 T DE112014004713 T DE 112014004713T DE 112014004713 A5 DE112014004713 A5 DE 112014004713A5
Authority
DE
Germany
Prior art keywords
ridgestruktur
unilaterally
broadened
semiconductor laser
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112014004713.9T
Other languages
English (en)
Inventor
Christoph Eichler
Jens Müller
Fabian Kopp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112014004713A5 publication Critical patent/DE112014004713A5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE112014004713.9T 2013-10-14 2014-10-14 Halbleiterlaser mit einseitig verbreiterter Ridgestruktur Withdrawn DE112014004713A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE201310220641 DE102013220641A1 (de) 2013-10-14 2013-10-14 Halbleiterlaser mit einseitig verbreiterter Ridgestruktur
DE102013220641.0 2013-10-14
PCT/EP2014/072004 WO2015055644A1 (de) 2013-10-14 2014-10-14 Halbleiterlaser mit einseitig verbreiterter ridgestruktur

Publications (1)

Publication Number Publication Date
DE112014004713A5 true DE112014004713A5 (de) 2016-07-21

Family

ID=51691069

Family Applications (2)

Application Number Title Priority Date Filing Date
DE201310220641 Withdrawn DE102013220641A1 (de) 2013-10-14 2013-10-14 Halbleiterlaser mit einseitig verbreiterter Ridgestruktur
DE112014004713.9T Withdrawn DE112014004713A5 (de) 2013-10-14 2014-10-14 Halbleiterlaser mit einseitig verbreiterter Ridgestruktur

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE201310220641 Withdrawn DE102013220641A1 (de) 2013-10-14 2013-10-14 Halbleiterlaser mit einseitig verbreiterter Ridgestruktur

Country Status (4)

Country Link
US (1) US10181700B2 (de)
CN (1) CN105637721B (de)
DE (2) DE102013220641A1 (de)
WO (1) WO2015055644A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015119146A1 (de) 2015-11-06 2017-05-11 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen eines Halbleiterlasers sowie Wafer
DE102017117135A1 (de) * 2017-07-28 2019-01-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode
DE102018010602B4 (de) 2018-06-13 2024-09-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser und herstellungsverfahren für einen halbleiterlaser
DE102018114133B4 (de) * 2018-06-13 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser und Herstellungsverfahren für einen Halbleiterlaser
DE102018125496A1 (de) * 2018-10-15 2020-04-16 Osram Opto Semiconductors Gmbh Halbleiterlaser und Herstellungsverfahren für Halbleiterlaser
CN115244805A (zh) * 2020-06-12 2022-10-25 日亚化学工业株式会社 激光二极管元件及其制造方法
DE102021103484A1 (de) 2021-02-15 2022-08-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser
DE102021211000A1 (de) 2021-09-30 2023-03-30 Trumpf Photonics, Inc. Halbleiterlaserchip mit mindestens einem überstehenden Stegbereich

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4730327A (en) * 1985-12-16 1988-03-08 Lytel Incorporated Dual channel fabry-perot laser
JP3822976B2 (ja) * 1998-03-06 2006-09-20 ソニー株式会社 半導体装置およびその製造方法
JP2000174385A (ja) * 1998-07-15 2000-06-23 Sony Corp 半導体レ―ザ
JP4077348B2 (ja) * 2003-03-17 2008-04-16 松下電器産業株式会社 半導体レーザ装置およびそれを用いた光ピックアップ装置
JP2006093614A (ja) 2004-09-27 2006-04-06 Hamamatsu Photonics Kk 半導体レーザ素子及び半導体レーザ素子アレイ
JP4948307B2 (ja) * 2006-07-31 2012-06-06 三洋電機株式会社 半導体レーザ素子およびその製造方法
DE102009058345B4 (de) * 2009-12-15 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
DE102011100175B4 (de) * 2011-05-02 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
DE102011054954A1 (de) 2011-10-31 2013-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronischer Halbleiterlaser

Also Published As

Publication number Publication date
DE102013220641A1 (de) 2015-04-16
WO2015055644A1 (de) 2015-04-23
US10181700B2 (en) 2019-01-15
CN105637721A (zh) 2016-06-01
US20160268775A1 (en) 2016-09-15
CN105637721B (zh) 2022-01-14

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R016 Response to examination communication
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee