DE112014002330A5 - Laserdiodenvorrichtung - Google Patents

Laserdiodenvorrichtung Download PDF

Info

Publication number
DE112014002330A5
DE112014002330A5 DE112014002330.2T DE112014002330T DE112014002330A5 DE 112014002330 A5 DE112014002330 A5 DE 112014002330A5 DE 112014002330 T DE112014002330 T DE 112014002330T DE 112014002330 A5 DE112014002330 A5 DE 112014002330A5
Authority
DE
Germany
Prior art keywords
laser diode
diode device
laser
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112014002330.2T
Other languages
English (en)
Inventor
Markus Reinhard Horn
Andreas Rozynski
Karsten Auen
Thomas Dobbertin
Stephan Haneder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112014002330A5 publication Critical patent/DE112014002330A5/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE112014002330.2T 2013-05-07 2014-04-25 Laserdiodenvorrichtung Pending DE112014002330A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013104728.9 2013-05-07
DE102013104728.9A DE102013104728A1 (de) 2013-05-07 2013-05-07 Laserdiodenvorrichtung
PCT/EP2014/058483 WO2014180682A1 (de) 2013-05-07 2014-04-25 Laserdiodenvorrichtung

Publications (1)

Publication Number Publication Date
DE112014002330A5 true DE112014002330A5 (de) 2016-01-21

Family

ID=50693633

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102013104728.9A Withdrawn DE102013104728A1 (de) 2013-05-07 2013-05-07 Laserdiodenvorrichtung
DE112014002330.2T Pending DE112014002330A5 (de) 2013-05-07 2014-04-25 Laserdiodenvorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102013104728.9A Withdrawn DE102013104728A1 (de) 2013-05-07 2013-05-07 Laserdiodenvorrichtung

Country Status (3)

Country Link
US (1) US9537285B2 (de)
DE (2) DE102013104728A1 (de)
WO (1) WO2014180682A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150303648A1 (en) * 2014-04-18 2015-10-22 Nichia Corporation Light emitting device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013104728A1 (de) 2013-05-07 2014-11-13 Osram Opto Semiconductors Gmbh Laserdiodenvorrichtung
DE102015208704A1 (de) * 2015-05-11 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102015107665A1 (de) * 2015-05-15 2016-11-17 Diehl Bgt Defence Gmbh & Co. Kg Vorrichtung zur Freistrahlübertragung von Energie und Information
CN112503405B (zh) 2015-05-20 2023-01-17 日亚化学工业株式会社 发光装置
JP6288132B2 (ja) * 2015-05-20 2018-03-07 日亜化学工業株式会社 発光装置
JP6879036B2 (ja) * 2017-04-28 2021-06-02 日亜化学工業株式会社 半導体レーザ装置
JP6711333B2 (ja) * 2017-08-16 2020-06-17 日亜化学工業株式会社 発光装置
JP6705462B2 (ja) * 2018-01-30 2020-06-03 日亜化学工業株式会社 発光装置
CN108429129A (zh) * 2018-05-08 2018-08-21 中国科学院半导体研究所 多线阵半导体激光器光栅外腔光谱的合束系统及方法
JP7071611B2 (ja) * 2018-05-30 2022-05-19 日亜化学工業株式会社 光源モジュール
JP7239806B2 (ja) * 2018-10-29 2023-03-15 日亜化学工業株式会社 光源装置
JP7332860B2 (ja) * 2019-05-29 2023-08-24 日亜化学工業株式会社 発光装置
JP2021086862A (ja) * 2019-11-25 2021-06-03 シャープ福山レーザー株式会社 マルチチップパッケージ、プロジェクター
DE102020106638A1 (de) 2020-03-11 2021-09-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterlaserbauelement und optoelektronische anordnung
US20240044475A1 (en) * 2020-12-24 2024-02-08 Nichia Corporation Light emitting device

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JPH01139693A (ja) * 1987-11-27 1989-06-01 Chisso Corp 燃料油品質改良剤
JP3026279B2 (ja) * 1995-10-25 2000-03-27 日本電気株式会社 記録再生装置用レーザモジュール
JP3777730B2 (ja) 1997-07-18 2006-05-24 ソニー株式会社 集積光学素子及び光学ピックアップ装置並びに記録再生装置
JPH11161993A (ja) * 1997-11-25 1999-06-18 Sony Corp 多波長光集積素子及び光学ピックアップ装置
DE19838518A1 (de) * 1998-08-25 2000-03-02 Bosch Gmbh Robert Anordnung
TW411454B (en) * 1998-10-28 2000-11-11 Ind Tech Res Inst Optical read/write head for dual wavelength
US6810057B1 (en) * 1999-11-25 2004-10-26 Matsushita Electric Industrial Co., Ltd. Semiconductor device and optical pickup device
KR100472443B1 (ko) * 2002-03-19 2005-02-21 삼성전자주식회사 광픽업 장치
DE102004012014B4 (de) * 2004-03-11 2009-09-10 Osram Opto Semiconductors Gmbh Scheibenlaser mit einer Pumpanordnung
DE102005036266A1 (de) 2005-07-11 2007-01-25 Osram Opto Semiconductors Gmbh Gehäuse für ein Laserdiodenbauelement, Laserdiodenbauelement und Verfahren zum Herstellen eines Laserdiodenbauelements
US7675955B2 (en) 2006-07-17 2010-03-09 Agere Systems Inc. Laser assembly for multi-laser applications
US7394841B1 (en) * 2007-01-18 2008-07-01 Epicrystals Oy Light emitting device for visual applications
JP4888261B2 (ja) 2007-07-12 2012-02-29 セイコーエプソン株式会社 光源装置、画像表示装置及びモニタ装置
DE102008063634B4 (de) * 2008-12-18 2021-03-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtmittel und Projektor mit mindestens einem solchen Leuchtmittel
JP2010251686A (ja) * 2009-03-26 2010-11-04 Harison Toshiba Lighting Corp 発光装置及びその製造方法
DE102010012604A1 (de) * 2010-03-24 2011-09-29 Osram Opto Semiconductors Gmbh Halbleiterlaserlichtquelle
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DE102012103257A1 (de) * 2012-04-16 2013-10-17 Osram Opto Semiconductors Gmbh Laserdiodenvorrichtung
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150303648A1 (en) * 2014-04-18 2015-10-22 Nichia Corporation Light emitting device
US10079470B2 (en) * 2014-04-18 2018-09-18 Nichia Corporation Light emitting device
US11112069B2 (en) 2014-04-18 2021-09-07 Nichia Corporation Light emitting device
US11506346B2 (en) 2014-04-18 2022-11-22 Nichia Corporation Light emitting device
US20230038900A1 (en) * 2014-04-18 2023-02-09 Nichia Corporation Light emitting device
US11841116B2 (en) * 2014-04-18 2023-12-12 Nichia Corporation Light emitting device

Also Published As

Publication number Publication date
WO2014180682A1 (de) 2014-11-13
US9537285B2 (en) 2017-01-03
US20160087399A1 (en) 2016-03-24
DE102013104728A1 (de) 2014-11-13

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