WO2014180682A1 - Laserdiodenvorrichtung - Google Patents
Laserdiodenvorrichtung Download PDFInfo
- Publication number
- WO2014180682A1 WO2014180682A1 PCT/EP2014/058483 EP2014058483W WO2014180682A1 WO 2014180682 A1 WO2014180682 A1 WO 2014180682A1 EP 2014058483 W EP2014058483 W EP 2014058483W WO 2014180682 A1 WO2014180682 A1 WO 2014180682A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser diode
- optical element
- diode device
- carrier
- chip
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 60
- 230000005855 radiation Effects 0.000 claims abstract description 28
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 12
- 230000010287 polarization Effects 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000010949 copper Substances 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- -1 nitride compound Chemical class 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 230000006735 deficit Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/0222—Gas-filled housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Definitions
- Laser diode device The invention relates to a laser diode device.
- Semiconductor lasers have a strong temperature sensitivity and an associated impairment of their
- the invention is based on the object
- the laser diode device comprises a carrier with a carrier top side.
- Laser diode device in particular at least one
- Laser diode chip which is advantageously arranged on the carrier top, wherein the laser diode chip in operation
- the laser diode chip can be placed directly on the
- Carrier top be arranged or by means of a
- Mounting plate may be arranged on the carrier top.
- the radiating surface is perpendicular to the
- the emission surface is, for example, a side surface of the laser diode chip. Thus emits the
- Laser diode chip the radiation preferably in a
- the radiating surface is that surface of the laser diode chip through which at least a major part of the operation of the
- the laser diode chip is then in particular an edge-emitting laser diode chip.
- the laser diode chip is particularly adapted to emit during operation electromagnetic radiation in the spectral range between UV radiation and infrared radiation.
- the laser diode chip can be configured to emit UV radiation, blue light, green light, red light or infrared radiation during operation.
- the laser diode chip is a laser diode chip based on a nitride compound semiconductor material.
- nitride compound semiconductor material means in the present context that a
- a nitride compound semiconductor material preferably Al n Ga m In ] __ n _ m N or consists of this, where 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1 and n + m ⁇ 1.
- This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it may, for example, have one or more dopants and additional constituents.
- the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, N), even if these can be partially replaced and / or supplemented by small amounts of further substances.
- the laser diode chip may have an epitaxially grown semiconductor layer sequence comprising an active layer, which is formed for example on the basis of AlGalnN and / or InGaN.
- the active layer is then configured to operate in electromagnetic mode
- the laser diode chip may have, for example, a conventional pn junction, a double heterostructure or a quantum well structure as active layer, particularly preferably one
- Quantum well structure unfolds here no meaning with regard to the dimensionality of the quantization. It thus includes quantum wells, quantum wires and quantum dots and any combination of these structures.
- the laser diode chip is characterized in particular by a high optical output power.
- the optical output power of the laser diode chip is at least 0.1 W.
- Laser diode device at least one optical element, which advantageously deflects the electromagnetic radiation emitted by the laser diode chip at least partially perpendicular to the carrier top side.
- the optical element is advantageously at least a portion of the radiated by the emitting surface of the laser diode electromagnetic radiation from the
- Laser diode device deflected by means of optical refraction and / or reflection. After the impact of the emitted electromagnetic radiation on the optical element is advantageously carried out a deflection at an angle of preferably 90 ° to the carrier top. Furthermore, by the optical element in particular shape and direction of the
- radiated light beam can be influenced.
- Laser diode device advantageously a mounting plate, which is advantageously arranged on the carrier top and this covers at least partially, wherein the
- Mounting plate between the at least one laser diode chip and the carrier is located.
- the mounting plate is preferably arranged on the carrier top side such that a main plane of the mounting plate runs parallel to the carrier top side.
- the mounting plate is preferably arranged on the carrier top side such that a main plane of the mounting plate runs parallel to the carrier top side.
- the laser diode chip is preferably with its largest
- Heat dissipation from the laser diode chip allows application of multiple laser diode chips in the device without significant coupling effects between the laser diode chips. Furthermore, thereby the laser diode chip is aligned so that a radiation direction of the
- electromagnetic radiation is parallel to the main plane of the mounting plate, whereby the radiating surface of the
- Laser diode chips is perpendicular to the mounting plate.
- the mounting plate is advantageously characterized by a high thermal conductivity, which leads to an efficient heat spreading in the mounting plate.
- the mounting plate is formed by a Cu plate.
- the mounting plate may advantageously have a thickness of 100 ym to a few mm.
- the mounting plate preferably has a thickness of at least 0.5 mm and at most 2 mm. According to at least one embodiment of the
- the at least one laser diode chip is arranged on a chip carrier.
- the chip carrier is preferably formed as a thin plate with a flat surface and serves the respective
- the chip carrier made of a material with high
- Chip carrier preferably causes electrical isolation of the laser diode chip from the carrier.
- the material of the chip carrier is preferably a dielectric material and in particular comprises no metal.
- the chip carrier material comprises a ceramic such as A1N.
- laser diode chips can be mounted quickly, easily and firmly fixed, advantageously allowing a plurality of laser diode chips to be arranged on the carrier top side and aligned with the optical element. According to at least one embodiment of the
- the optical element is a prism.
- Light beam deflection can be used by refraction.
- Laser diode chips are advantageously deflected by one or more prisms such that the light rays are spatially separated from each other or partially or completely overlap. According to at least one embodiment of the
- the optical element is a mirror.
- the mirror is advantageously characterized by a high reflectivity, so that during the deflection of the
- Laser diode device is the optical element
- a polarization cube is used as the optical element.
- Laser diode device is arranged between the laser diode chip and the optical element at least one retarder plate.
- a retardation plate can advantageously be arranged between a laser diode chip and the optical element on the carrier top side.
- the retardation plate may for example also be formed as a film and
- the retardation plate is a ⁇ / 2 plate.
- Laser diode device a plurality of laser diode chips are arranged on the carrier top.
- preferably common emission is deflected.
- laser diode chips of the same design can be used.
- light of the same wavelength from several laser diode chips can be combined to form a high-intensity total emission beam.
- Wavelengths can be achieved.
- the laser diode chips are directed to the optical element, that at least partially overlap by the optical element deflected light beams of the laser diode chips.
- the laser diode chips are so directed to the optical element that through the optical Element deflected light beams of the laser diode chips do not overlap.
- Deflection by the optical element spatially separated light beams.
- the deflection surfaces of the optical element are not directed to the same emission point. According to at least one embodiment of the
- Laser diode device have the laser diode chips
- Light beam at least partially from light of the same wavelength / polarization or different
- Laser diode devices deviate the emission wavelengths of the laser diode chips only by at most 10 nm or at most 15 nm from each other.
- the difference in the wavelengths of the individual laser diode chips can advantageously be only slightly.
- all the laser diode chips can have wavelengths of the same color impression, for example the color red.
- a deviation of the wavelengths with one another can advantageously amount to only 10 nm or 15 nm.
- Such a deviation in the emission wavelengths of the laser diode chips can be advantageously achieved by different constructions of the
- Laser diode chips for example by the choice of
- Semiconductor materials can be achieved.
- the bandwidth of the superposed light can be increased and, for example, speckles in the laser light can be reduced.
- the laser diode device comprises a housing which is a TO housing. According to at least one embodiment of the
- the TO package is sealed against the environment and in particular hermetically sealed.
- the housing is advantageously filled with a protective gas or evacuated.
- Figures 1, la, 2, 2a, 3, 3a, 3b and 4 each show a laser diode device according to the embodiments of the invention.
- Size ratios of the components with each other are not to be considered as true to scale.
- FIG. 1 shows a first exemplary embodiment of a laser diode device 10 described here in one embodiment
- the laser diode device 10 comprises a carrier 1, which in the present case is made of steel.
- a mounting plate 3 is on one
- the mounting plate 3 is formed of copper, whereby a high thermal conductivity is given. Continue piercing
- the laser diode device 10 has a laser diode chip 4, which is in particular an InGaN laser formed from epitaxially grown semiconductor layers.
- a laser diode chip 4 which is in particular an InGaN laser formed from epitaxially grown semiconductor layers.
- it is an edge emitter, which in operation electromegnatic radiation emitted by a radiating surface 5, wherein it is at the emitting surface 5 is a side surface of the laser diode chip 4.
- Laser diode chip 4 electromagnetic radiation parallel to a main plane of the mounting plate. 3
- the laser diode chip 4 is designed such that it is applied with a longitudinal side on a chip carrier 7, wherein this longitudinal side advantageously the largest
- the emission surface 5 is perpendicular to the chip carrier 7.
- the chip carrier 7 serves in particular as a substructure for the laser diode chip 4, isolating the laser diode chip 4
- Bonding wire connections from the contact bars 9a and 9b made, but this is not shown in the figure 1.
- the formation of the chip carrier 7 from A1N is characterized by a high thermal conductivity and thus an effective
- Mounting plate 3 takes place in the carrier 1. On the mounting plate 3 is an optical element. 6
- the prism is advantageous for the deflection of the
- Laser diode chip 4 emitted electromagnetic radiation by refraction.
- the deflection is preferably in a direction of the mounting plate 3 and the carrier top side 11 facing away from A.
- the figure la shows a schematic sectional view of the embodiment of Figure 1, wherein on the support 1, a housing 2 is mounted.
- the housing 2 advantageously has an opening in the emission direction above the optical element 6.
- FIG. 2 an exemplary embodiment is shown with reference to a schematic sectional illustration, in which, in contrast to the exemplary embodiment of FIG.
- Laser diode chips 4 and a delay plate 8 are arranged on the mounting plate 3.
- the laser diode chips 4 may advantageously be identical in construction and emit electromagnetic radiation of the same wavelength or, alternatively, be different in construction and different
- each of the two laser diode chips 4 is mounted with its own chip carrier 7 on the mounting plate 3 and emitted by the
- the optical element 6 may advantageously be a prism, which is preferably irradiated axially symmetrically with respect to its central axis of two opposite laser diode chips 4, wherein between a
- Laser diode chip 4 and the prism a delay plate 8 is mounted on the mounting plate 3.
- the optical element 6 may also be two mirrors
- Delay plate 8 is in particular a ⁇ / 2 plate, which in such a way before the laser diode chip 4th is positioned so that the retardation plate 8 detects the total emitted radiation of the one laser diode chip 4.
- the deflection of the radiation of the laser diode chips in the direction away from the carrier top 11 direction can advantageously deflected to an at least partial superposition or a spatially separated radiation of the two
- FIG. 2 a shows a schematic sectional view of an embodiment, which is characterized by the
- Embodiment of Figure 2 differentiates that no delay element 8 between one of the two
- Laser diode chips 4 and the optical element 6 is arranged.
- the two laser diode chips 4 can advantageously be so directed with the radiating surfaces 5 on the optical element 6, that overlap the deflected light beam at least partially or spatially separated from each other. A possible at least partial overlap of the deflected light beam of the same
- Laser diode device 10 it is possible to at least partially overlay two light beams of different wavelengths or to radiate them spatially separated from one another. A difference in the wavelengths of the individual laser diode chips can be advantageous only
- Laser diode chips have wavelengths of the same color impression, for example the color red.
- a deviation of Wavelengths with one another can advantageously be only at most 10 nm or at most 15 nm. Such a deviation in the emission wavelengths of the laser diode chips may
- Laser diode chips for example by the choice of
- Semiconductor materials can be achieved.
- the bandwidth of the superposed light can be increased and, for example, speckles in the laser light can be reduced.
- Laser diode device 10 according to the embodiment of Figure 2 in a plan view opposite to the emission direction A.
- the mounting plate 3 covers at least a part of
- Carrier top 11 from.
- the two laser diode chips 4 are mounted on their respective chip carriers 7 and
- Retarder plate 8 positioned on the mounting plate 3.
- a polarization cube may also be used as optical
- Element 6 can be used.
- a polarization cube By means of a polarization cube, it is possible to completely cover the deflected light beam bundles as differently polarized light beam bundles.
- the electrical contacting of the laser diode chips 4 is advantageously achieved by means of two contact rods 9a and 9b. In the present case, both contact rods 9a and 9b penetrate the
- Carrier 1 and the mounting plate 3 preferably laterally spaced from the optical element 6 and opposite each other with respect to the axis D, wherein they are electrically isolated from the carrier 1 and the mounting plate 3. Furthermore, contacting by the contact bars 9a and 9b with the laser diode chips 4 and with the chip carriers 7 can preferably take place by means of bonding wire connections.
- FIG. 3 a shows a top view of an exemplary embodiment of a laser diode device 10, which differs from FIG. 3 in the number of laser diode chips 4 and the chip carriers 7.
- a retardation plate 8 does not include the exemplary embodiment of FIG. 3a.
- the four laser diode chips can be the same
- Be type and have the same emission wavelengths or different types and different
- FIG. 3b shows a top view of an embodiment according to a modification of the laser diode device 10 according to FIG. 3, wherein the two laser diode chips 4 on their chip carriers 7 are located on opposite sides with respect to the optical element 6, but with each other
- FIG. 4 shows a plan view of an exemplary embodiment according to a further modification of the laser diode device 10 according to FIG. 3, wherein two optical elements 6 on the
- Mounting plate 3 are arranged.
- the two optical elements are two prisms or
- the front surfaces of the optical elements which redirect the radiation emitted by the laser diode chips 4 are parallel to each other for both optical elements and are aligned with the respective laser diode chip, thus lying between the edge lines K and L. Furthermore, both front surfaces of the optical elements preferably the same angle of attack with respect to
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112014002330.2T DE112014002330A5 (de) | 2013-05-07 | 2014-04-25 | Laserdiodenvorrichtung |
US14/787,680 US9537285B2 (en) | 2013-05-07 | 2014-04-25 | Laser diode apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013104728.9 | 2013-05-07 | ||
DE102013104728.9A DE102013104728A1 (de) | 2013-05-07 | 2013-05-07 | Laserdiodenvorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014180682A1 true WO2014180682A1 (de) | 2014-11-13 |
Family
ID=50693633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2014/058483 WO2014180682A1 (de) | 2013-05-07 | 2014-04-25 | Laserdiodenvorrichtung |
Country Status (3)
Country | Link |
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US (1) | US9537285B2 (de) |
DE (2) | DE102013104728A1 (de) |
WO (1) | WO2014180682A1 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108429129A (zh) * | 2018-05-08 | 2018-08-21 | 中国科学院半导体研究所 | 多线阵半导体激光器光栅外腔光谱的合束系统及方法 |
JP2021090062A (ja) * | 2015-05-20 | 2021-06-10 | 日亜化学工業株式会社 | 発光装置 |
US11149917B2 (en) | 2015-05-20 | 2021-10-19 | Nichia Corporation | Light-emitting device |
US11506346B2 (en) * | 2014-04-18 | 2022-11-22 | Nichia Corporation | Light emitting device |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013104728A1 (de) | 2013-05-07 | 2014-11-13 | Osram Opto Semiconductors Gmbh | Laserdiodenvorrichtung |
DE102015208704A1 (de) * | 2015-05-11 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
DE102015107665A1 (de) * | 2015-05-15 | 2016-11-17 | Diehl Bgt Defence Gmbh & Co. Kg | Vorrichtung zur Freistrahlübertragung von Energie und Information |
JP6879036B2 (ja) * | 2017-04-28 | 2021-06-02 | 日亜化学工業株式会社 | 半導体レーザ装置 |
JP6711333B2 (ja) * | 2017-08-16 | 2020-06-17 | 日亜化学工業株式会社 | 発光装置 |
JP6705462B2 (ja) * | 2018-01-30 | 2020-06-03 | 日亜化学工業株式会社 | 発光装置 |
JP7071611B2 (ja) * | 2018-05-30 | 2022-05-19 | 日亜化学工業株式会社 | 光源モジュール |
JP7239806B2 (ja) * | 2018-10-29 | 2023-03-15 | 日亜化学工業株式会社 | 光源装置 |
JP7332860B2 (ja) | 2019-05-29 | 2023-08-24 | 日亜化学工業株式会社 | 発光装置 |
JP2021086862A (ja) * | 2019-11-25 | 2021-06-03 | シャープ福山レーザー株式会社 | マルチチップパッケージ、プロジェクター |
DE102020106638A1 (de) | 2020-03-11 | 2021-09-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterlaserbauelement und optoelektronische anordnung |
WO2022138733A1 (ja) * | 2020-12-24 | 2022-06-30 | 日亜化学工業株式会社 | 発光装置 |
Citations (9)
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JP2022097613A (ja) * | 2015-05-20 | 2022-06-30 | 日亜化学工業株式会社 | 発光装置 |
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JP7256408B2 (ja) | 2015-05-20 | 2023-04-12 | 日亜化学工業株式会社 | 発光装置 |
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Also Published As
Publication number | Publication date |
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US9537285B2 (en) | 2017-01-03 |
US20160087399A1 (en) | 2016-03-24 |
DE102013104728A1 (de) | 2014-11-13 |
DE112014002330A5 (de) | 2016-01-21 |
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