DE112013007361T8 - Halbleitervorrichtung - Google Patents
Halbleitervorrichtung Download PDFInfo
- Publication number
- DE112013007361T8 DE112013007361T8 DE112013007361.7T DE112013007361T DE112013007361T8 DE 112013007361 T8 DE112013007361 T8 DE 112013007361T8 DE 112013007361 T DE112013007361 T DE 112013007361T DE 112013007361 T8 DE112013007361 T8 DE 112013007361T8
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- Germany
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- semiconductor device
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
- H01L2224/48132—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire with an intermediate bond, e.g. continuous wire daisy chain
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2013/072558 WO2015025422A1 (ja) | 2013-08-23 | 2013-08-23 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE112013007361T5 DE112013007361T5 (de) | 2016-05-12 |
DE112013007361T8 true DE112013007361T8 (de) | 2016-09-08 |
DE112013007361B4 DE112013007361B4 (de) | 2019-07-04 |
Family
ID=52483225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112013007361.7T Active DE112013007361B4 (de) | 2013-08-23 | 2013-08-23 | Halbleitervorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US9530766B2 (de) |
JP (1) | JP6065979B2 (de) |
CN (1) | CN105474543A (de) |
DE (1) | DE112013007361B4 (de) |
WO (1) | WO2015025422A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9716052B2 (en) | 2013-08-28 | 2017-07-25 | Mitsubishi Electric Corporation | Semiconductor device comprising a conductive film joining a diode and switching element |
JP6665457B2 (ja) * | 2015-09-16 | 2020-03-13 | 富士電機株式会社 | 半導体装置 |
JP2017069716A (ja) * | 2015-09-29 | 2017-04-06 | 株式会社オートネットワーク技術研究所 | 半導体装置及び制御装置 |
US10727163B2 (en) * | 2016-07-26 | 2020-07-28 | Mitsubishi Electric Corporation | Semiconductor device |
CN110100314B (zh) * | 2017-06-09 | 2022-08-09 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
WO2019017504A1 (ko) * | 2017-07-18 | 2019-01-24 | 이상훈 | 웨이퍼 레벨에서 온도 및 알에프 특성 모니터링이 가능한 알에프 파워 소자 |
JP7098953B2 (ja) | 2018-02-20 | 2022-07-12 | 三菱電機株式会社 | 半導体装置 |
WO2020110170A1 (ja) * | 2018-11-26 | 2020-06-04 | 三菱電機株式会社 | 半導体パッケージ、その製造方法、及び、半導体装置 |
JP7334435B2 (ja) * | 2019-03-22 | 2023-08-29 | 富士電機株式会社 | 半導体装置および半導体装置の検査方法 |
GB201919194D0 (en) | 2019-12-23 | 2020-02-05 | Eaton Intelligent Power Ltd | Ball valve with integral gear |
WO2021221042A1 (ja) * | 2020-04-27 | 2021-11-04 | ローム株式会社 | 半導体装置 |
EP3965105B1 (de) | 2020-07-17 | 2024-02-07 | Changxin Memory Technologies, Inc. | Kalibrierung eines temperaturerkennungsmoduls in einem halbleiterspeicher mit einer vielzahl von speicherchips |
EP3968324B1 (de) | 2020-07-17 | 2023-07-05 | Changxin Memory Technologies, Inc. | Halbleiterbauelement |
EP4095857A4 (de) | 2020-07-17 | 2023-08-23 | Changxin Memory Technologies, Inc. | Halbleiterbauelement |
CN113948118A (zh) * | 2020-07-17 | 2022-01-18 | 长鑫存储技术有限公司 | 半导体装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03188661A (ja) | 1989-12-18 | 1991-08-16 | Toshiba Corp | 樹脂封止型半導体装置 |
JP3982842B2 (ja) * | 1993-08-18 | 2007-09-26 | 株式会社ルネサステクノロジ | 半導体装置 |
JP3552888B2 (ja) * | 1997-11-11 | 2004-08-11 | 富士電機デバイステクノロジー株式会社 | インテリジェントパワーモジュールおよびその試験方法 |
JP2000058820A (ja) * | 1998-08-07 | 2000-02-25 | Hitachi Ltd | パワー半導体素子及びパワーモジュール |
JP3509623B2 (ja) | 1999-04-26 | 2004-03-22 | トヨタ自動車株式会社 | 半導体スイッチ素子チップの温度検出構造および温度検出装置並びに半導体リレー |
US6930870B2 (en) | 2000-09-29 | 2005-08-16 | Matsushita Electric Works, Ltd. | Semiconductor device with protective functions |
JP4710131B2 (ja) * | 2000-12-21 | 2011-06-29 | 株式会社豊田自動織機 | 半導体装置 |
JP3701228B2 (ja) | 2001-11-01 | 2005-09-28 | 三菱電機株式会社 | 半導体装置 |
JP4323299B2 (ja) | 2003-12-03 | 2009-09-02 | 三菱電機株式会社 | 半導体装置 |
JP4765252B2 (ja) * | 2004-01-13 | 2011-09-07 | 株式会社豊田自動織機 | 温度検出機能付き半導体装置 |
JP2006049567A (ja) | 2004-08-04 | 2006-02-16 | Nissan Motor Co Ltd | 半導体装置の使用方法及び半導体装置 |
JP2009159662A (ja) | 2007-12-25 | 2009-07-16 | Fuji Electric Systems Co Ltd | 電力用半導体素子の制御回路 |
JP2009206140A (ja) | 2008-02-26 | 2009-09-10 | Sumitomo Electric Ind Ltd | パワーモジュール |
WO2012029652A1 (ja) * | 2010-09-03 | 2012-03-08 | 三菱電機株式会社 | 半導体装置 |
US9716052B2 (en) | 2013-08-28 | 2017-07-25 | Mitsubishi Electric Corporation | Semiconductor device comprising a conductive film joining a diode and switching element |
-
2013
- 2013-08-23 US US14/897,362 patent/US9530766B2/en active Active
- 2013-08-23 CN CN201380079050.7A patent/CN105474543A/zh active Pending
- 2013-08-23 DE DE112013007361.7T patent/DE112013007361B4/de active Active
- 2013-08-23 JP JP2015532669A patent/JP6065979B2/ja active Active
- 2013-08-23 WO PCT/JP2013/072558 patent/WO2015025422A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JPWO2015025422A1 (ja) | 2017-03-02 |
CN105474543A (zh) | 2016-04-06 |
US9530766B2 (en) | 2016-12-27 |
JP6065979B2 (ja) | 2017-01-25 |
US20160141284A1 (en) | 2016-05-19 |
DE112013007361B4 (de) | 2019-07-04 |
DE112013007361T5 (de) | 2016-05-12 |
WO2015025422A1 (ja) | 2015-02-26 |
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