SG11201603413PA - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
SG11201603413PA
SG11201603413PA SG11201603413PA SG11201603413PA SG11201603413PA SG 11201603413P A SG11201603413P A SG 11201603413PA SG 11201603413P A SG11201603413P A SG 11201603413PA SG 11201603413P A SG11201603413P A SG 11201603413PA SG 11201603413P A SG11201603413P A SG 11201603413PA
Authority
SG
Singapore
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
SG11201603413PA
Inventor
Masaki Wasekura
Original Assignee
Toyota Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Co Ltd filed Critical Toyota Motor Co Ltd
Publication of SG11201603413PA publication Critical patent/SG11201603413PA/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/08Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18Modifications for indicating state of switch
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027Measuring means of, e.g. currents through or voltages across the switch
SG11201603413PA 2013-10-31 2014-10-23 Semiconductor device SG11201603413PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013227677A JP5800006B2 (en) 2013-10-31 2013-10-31 Semiconductor device
PCT/IB2014/002200 WO2015063564A1 (en) 2013-10-31 2014-10-23 Semiconductor device

Publications (1)

Publication Number Publication Date
SG11201603413PA true SG11201603413PA (en) 2016-05-30

Family

ID=51999454

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201603413PA SG11201603413PA (en) 2013-10-31 2014-10-23 Semiconductor device

Country Status (9)

Country Link
US (1) US9608609B2 (en)
JP (1) JP5800006B2 (en)
KR (1) KR101761526B1 (en)
CN (1) CN105706367B (en)
DE (1) DE112014004979B4 (en)
MY (1) MY176670A (en)
SG (1) SG11201603413PA (en)
TW (1) TWI555330B (en)
WO (1) WO2015063564A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5831527B2 (en) * 2013-10-31 2015-12-09 トヨタ自動車株式会社 Semiconductor device
JP5831528B2 (en) * 2013-10-31 2015-12-09 トヨタ自動車株式会社 Semiconductor device
JP6349856B2 (en) * 2014-03-27 2018-07-04 株式会社デンソー Drive device
JP6500694B2 (en) * 2015-08-19 2019-04-17 富士電機株式会社 Control device for power conversion device and power conversion device
CN107750420B (en) * 2015-12-07 2020-04-17 富士电机株式会社 Voltage generation circuit and overcurrent detection circuit
JP6665681B2 (en) * 2016-05-19 2020-03-13 株式会社デンソー Semiconductor device
TWI640151B (en) * 2017-09-20 2018-11-01 瀚薪科技股份有限公司 Negative voltage gate driven smart power module
DE112018005588T5 (en) * 2017-10-17 2020-07-16 Fuji Electric Co., Ltd. OVERCURRENT DETECTING DEVICE, CONTROL DEVICE AND OVERCURRENT DETECTING METHOD

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299431A (en) * 1992-04-16 1993-11-12 Toyota Autom Loom Works Ltd Transistor with current detecting function attached
JP2003009509A (en) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp Intelligent power module
JP2003274667A (en) * 2002-03-14 2003-09-26 Toshiba Corp Power module for three-phase inverter and three-phase motor drive system
JP2008042950A (en) * 2006-08-01 2008-02-21 Mitsubishi Electric Corp Power transformer
JP2008072848A (en) 2006-09-14 2008-03-27 Mitsubishi Electric Corp Semiconductor device
JP4924578B2 (en) * 2007-09-05 2012-04-25 株式会社デンソー Semiconductor device
DE102008045410B4 (en) * 2007-09-05 2019-07-11 Denso Corporation Semiconductor device with IGBT with built-in diode and semiconductor device with DMOS with built-in diode
JP4577425B2 (en) * 2007-11-07 2010-11-10 株式会社デンソー Semiconductor device
JP5682148B2 (en) * 2010-06-04 2015-03-11 株式会社デンソー Semiconductor device provided with current detection circuit and inverter circuit having the same
JP5170208B2 (en) 2010-10-22 2013-03-27 富士電機株式会社 Current detection circuit for power semiconductor devices
JP5627512B2 (en) * 2011-03-04 2014-11-19 三菱電機株式会社 Power module
JP5831527B2 (en) * 2013-10-31 2015-12-09 トヨタ自動車株式会社 Semiconductor device
JP5949727B2 (en) * 2013-10-31 2016-07-13 トヨタ自動車株式会社 Power converter
JP5831528B2 (en) * 2013-10-31 2015-12-09 トヨタ自動車株式会社 Semiconductor device
JP6086101B2 (en) * 2014-07-16 2017-03-01 トヨタ自動車株式会社 Semiconductor device

Also Published As

Publication number Publication date
DE112014004979T5 (en) 2016-08-25
TW201535972A (en) 2015-09-16
WO2015063564A1 (en) 2015-05-07
KR20160060099A (en) 2016-05-27
TWI555330B (en) 2016-10-21
JP5800006B2 (en) 2015-10-28
DE112014004979B4 (en) 2023-02-09
JP2015089049A (en) 2015-05-07
US20160269007A1 (en) 2016-09-15
MY176670A (en) 2020-08-19
CN105706367B (en) 2018-12-11
CN105706367A (en) 2016-06-22
KR101761526B1 (en) 2017-07-25
US9608609B2 (en) 2017-03-28

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