SG11201603413PA - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- SG11201603413PA SG11201603413PA SG11201603413PA SG11201603413PA SG11201603413PA SG 11201603413P A SG11201603413P A SG 11201603413PA SG 11201603413P A SG11201603413P A SG 11201603413PA SG 11201603413P A SG11201603413P A SG 11201603413PA SG 11201603413P A SG11201603413P A SG 11201603413PA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013227677A JP5800006B2 (en) | 2013-10-31 | 2013-10-31 | Semiconductor device |
PCT/IB2014/002200 WO2015063564A1 (en) | 2013-10-31 | 2014-10-23 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201603413PA true SG11201603413PA (en) | 2016-05-30 |
Family
ID=51999454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201603413PA SG11201603413PA (en) | 2013-10-31 | 2014-10-23 | Semiconductor device |
Country Status (9)
Country | Link |
---|---|
US (1) | US9608609B2 (en) |
JP (1) | JP5800006B2 (en) |
KR (1) | KR101761526B1 (en) |
CN (1) | CN105706367B (en) |
DE (1) | DE112014004979B4 (en) |
MY (1) | MY176670A (en) |
SG (1) | SG11201603413PA (en) |
TW (1) | TWI555330B (en) |
WO (1) | WO2015063564A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5831527B2 (en) * | 2013-10-31 | 2015-12-09 | トヨタ自動車株式会社 | Semiconductor device |
JP5831528B2 (en) * | 2013-10-31 | 2015-12-09 | トヨタ自動車株式会社 | Semiconductor device |
JP6349856B2 (en) * | 2014-03-27 | 2018-07-04 | 株式会社デンソー | Drive device |
JP6500694B2 (en) * | 2015-08-19 | 2019-04-17 | 富士電機株式会社 | Control device for power conversion device and power conversion device |
CN107750420B (en) * | 2015-12-07 | 2020-04-17 | 富士电机株式会社 | Voltage generation circuit and overcurrent detection circuit |
JP6665681B2 (en) * | 2016-05-19 | 2020-03-13 | 株式会社デンソー | Semiconductor device |
TWI640151B (en) * | 2017-09-20 | 2018-11-01 | 瀚薪科技股份有限公司 | Negative voltage gate driven smart power module |
DE112018005588T5 (en) * | 2017-10-17 | 2020-07-16 | Fuji Electric Co., Ltd. | OVERCURRENT DETECTING DEVICE, CONTROL DEVICE AND OVERCURRENT DETECTING METHOD |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05299431A (en) * | 1992-04-16 | 1993-11-12 | Toyota Autom Loom Works Ltd | Transistor with current detecting function attached |
JP2003009509A (en) * | 2001-06-25 | 2003-01-10 | Mitsubishi Electric Corp | Intelligent power module |
JP2003274667A (en) * | 2002-03-14 | 2003-09-26 | Toshiba Corp | Power module for three-phase inverter and three-phase motor drive system |
JP2008042950A (en) * | 2006-08-01 | 2008-02-21 | Mitsubishi Electric Corp | Power transformer |
JP2008072848A (en) | 2006-09-14 | 2008-03-27 | Mitsubishi Electric Corp | Semiconductor device |
JP4924578B2 (en) * | 2007-09-05 | 2012-04-25 | 株式会社デンソー | Semiconductor device |
DE102008045410B4 (en) * | 2007-09-05 | 2019-07-11 | Denso Corporation | Semiconductor device with IGBT with built-in diode and semiconductor device with DMOS with built-in diode |
JP4577425B2 (en) * | 2007-11-07 | 2010-11-10 | 株式会社デンソー | Semiconductor device |
JP5682148B2 (en) * | 2010-06-04 | 2015-03-11 | 株式会社デンソー | Semiconductor device provided with current detection circuit and inverter circuit having the same |
JP5170208B2 (en) | 2010-10-22 | 2013-03-27 | 富士電機株式会社 | Current detection circuit for power semiconductor devices |
JP5627512B2 (en) * | 2011-03-04 | 2014-11-19 | 三菱電機株式会社 | Power module |
JP5831527B2 (en) * | 2013-10-31 | 2015-12-09 | トヨタ自動車株式会社 | Semiconductor device |
JP5949727B2 (en) * | 2013-10-31 | 2016-07-13 | トヨタ自動車株式会社 | Power converter |
JP5831528B2 (en) * | 2013-10-31 | 2015-12-09 | トヨタ自動車株式会社 | Semiconductor device |
JP6086101B2 (en) * | 2014-07-16 | 2017-03-01 | トヨタ自動車株式会社 | Semiconductor device |
-
2013
- 2013-10-31 JP JP2013227677A patent/JP5800006B2/en not_active Expired - Fee Related
-
2014
- 2014-10-22 TW TW103136443A patent/TWI555330B/en not_active IP Right Cessation
- 2014-10-23 WO PCT/IB2014/002200 patent/WO2015063564A1/en active Application Filing
- 2014-10-23 US US15/029,687 patent/US9608609B2/en active Active
- 2014-10-23 SG SG11201603413PA patent/SG11201603413PA/en unknown
- 2014-10-23 DE DE112014004979.4T patent/DE112014004979B4/en active Active
- 2014-10-23 KR KR1020167010176A patent/KR101761526B1/en active IP Right Grant
- 2014-10-23 CN CN201480059147.6A patent/CN105706367B/en not_active Expired - Fee Related
- 2014-10-23 MY MYPI2016701427A patent/MY176670A/en unknown
Also Published As
Publication number | Publication date |
---|---|
DE112014004979T5 (en) | 2016-08-25 |
TW201535972A (en) | 2015-09-16 |
WO2015063564A1 (en) | 2015-05-07 |
KR20160060099A (en) | 2016-05-27 |
TWI555330B (en) | 2016-10-21 |
JP5800006B2 (en) | 2015-10-28 |
DE112014004979B4 (en) | 2023-02-09 |
JP2015089049A (en) | 2015-05-07 |
US20160269007A1 (en) | 2016-09-15 |
MY176670A (en) | 2020-08-19 |
CN105706367B (en) | 2018-12-11 |
CN105706367A (en) | 2016-06-22 |
KR101761526B1 (en) | 2017-07-25 |
US9608609B2 (en) | 2017-03-28 |
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