JP4577425B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device in which an insulated gate transistor element and a diode element are formed on the same semiconductor substrate and are connected in antiparallel.

  A semiconductor device in which an insulated gate transistor element and a diode element are formed on the same semiconductor substrate and the insulated gate transistor element and the diode element are connected in antiparallel is disclosed in, for example, Japanese Patent Application Laid-Open No. 2007-214541 (Patent Document 1). ), JP-A-2005-317751 (Patent Document 2) and JP-A-2007-134625 (Patent Document 3).

  FIG. 19 is a schematic cross-sectional view of the semiconductor device 100 disclosed in Patent Document 1. In FIG.

  A semiconductor device 100 illustrated in FIG. 19 is a semiconductor device in which an IGBT cell 100 i and a diode cell 100 d are provided on the same semiconductor substrate 1.

  In the semiconductor device 100, the first electrode layer 8 made of polysilicon or the like embedded in the first trench T1 via the insulating film 7 formed on the side wall is used as the gate electrode of the IGBT cell 100i. A second electrode layer 10 made of aluminum or the like is formed on the surface on the main surface side of the semiconductor substrate 1. The second electrode layer 10 is also embedded in the second trench T2. Second electrode layer 10 has a structure that penetrates main surface side N conductivity type region 3a and main surface side P conductivity type region 4a and short-circuits them, and is electrically connected to P conductivity type layer 2a. The emitter cell of the IGBT cell 100i and the anode electrode of the diode cell 100d. In the surface layer portion on the back surface side of the semiconductor substrate 1, a back surface side P conductivity type (P +) region 5 and a back surface side N conductivity type (N +) region 6 containing impurities in a high concentration are formed. In the semiconductor device 100, the third electrode layer 11 that is electrically connected to the back side P-conductivity type region 5 and the back side N-conductivity type region 6 and short-circuits them is connected to the collector electrode of the IGBT cell 100i and the diode cell 100d. The cathode is used. For convenience, in the semiconductor device 100 and each semiconductor device described below, as shown in FIG. 19, the back side P-conductivity type region 5 is formed immediately below the region where the trench gate electrode is formed on the main surface side. The formed region is referred to as an IGBT region, and the region in which the back surface side N conductivity type region 6 is formed is referred to as a diode region.

19, a semiconductor device in which an insulated gate transistor element (for example, an IGBT element) and a diode element are connected in antiparallel, that is, a first terminal (for example, a collector terminal) of the insulated gate transistor element A semiconductor device in which a cathode terminal of a diode element is connected on the high potential side and a second terminal (eg, an emitter terminal) of the insulated gate transistor element and an anode terminal of the diode element are connected on the low potential side is incorporated in an inverter circuit. The load is often used for PWM (Pulse Width Modulation) control.
JP 2007-214541 A JP 2005-317751 A JP 2007-134625 A

  When a diode built-in IGBT element such as the semiconductor device 100 shown in FIG. 19 is incorporated in an inverter circuit, the gate signal of the IGBT element is in principle a signal whose phase is inverted between the upper and lower arms. The gate signal is also input to the IGBT element at the timing to perform. That is, the operation of the diode element and the operation of the IGBT element occur simultaneously. As described above, when the operation of the diode element and the operation of the IGBT element occur at the same time, the electrodes are common as described above. Therefore, when the channel of the IGBT element is turned on, the anode and the cathode of the diode element are the same. Trying to become a potential. This makes it difficult for the body diode to operate in the forward direction due to the gate potential of the IGBT element. As a result, there is a problem that the forward voltage Vf of the diode element increases and the forward loss of the diode element increases.

  In view of the above problems, in a semiconductor device including an IGBT element with a built-in diode, a new semiconductor device capable of avoiding an interference between the operation of the diode element and the operation of the IGBT element and preventing an increase in forward loss of the diode Is invented and patent pending (application 2007-229959).

  FIG. 20 is a circuit diagram of the semiconductor device 90 for which the above patent application is pending. As shown in the figure, the semiconductor device 90 includes an AND circuit 50, a diode built-in IGBT element 20, a sense resistor 30, and a feedback circuit 40. And is configured.

  The AND circuit 50 is a logic circuit that outputs a Hi level signal when all input signals are at a Hi level. The AND circuit 50 outputs an external PWM gate signal for driving the diode built-in IGBT element 20 and the output of the feedback circuit 40. Is entered.

  The diode built-in IGBT element 20 includes an IGBT part 21 and a diode part 22, and the IGBT part 21 and the diode part 22 are formed on the same semiconductor substrate. The IGBT unit 21 includes a main IGBT element 21a connected to a load or the like, and a current detection IGBT sense element 21b used for detecting a current flowing through the main IGBT element 21a. Control of the gate voltage in the main IGBT element 21 a and the current detection IGBT sense element 21 b is performed by the PWM gate signal that has passed through the AND circuit 50. The emitter of the IGBT sense element 21b on the current detection cell side is connected to one end of the sense resistor 30, and the potential difference Vs between both ends of the sense resistor 30 is fed back to the feedback circuit 40. The diode section 22 is for commutating the load current flowing through the IGBT element 21a, and detects the main diode element 22a connected to the IGBT element 21a and the current flowing through the main diode element 22a. And a diode sensing element 22b for current detection used for this purpose. The anode of the diode sense element 22 b is also connected to one end of the sense resistor 30.

  The feedback circuit 40 determines whether or not a current is flowing through the diode element 22a and whether or not an excessive current is flowing through the IGBT element 21a, and permits the passage of the PWM gate signal input to the AND circuit 50 according to the determination result. Or stop it. Such a feedback circuit 40, when driving the IGBT element 21a, outputs an output that allows passage of the PWM gate signal input to the AND circuit 50, and inputs the potential difference Vs between both ends of the sense resistor 30. When Vs is smaller than the diode current detection threshold Vth1 or larger than the overcurrent detection threshold Vth2, an output for stopping the passage of the PWM gate signal input to the AND circuit 50 is output.

  In the semiconductor device 90 shown in FIG. 20, when the diode element 22a operates in the forward direction, interference with the gate signal of the IGBT element 21a can be avoided and an increase in the forward voltage can be avoided. It is possible to prevent an increase in loss during forward operation of 22a. On the other hand, when an excess current flows through the IGBT element 21a, the output of the feedback circuit 40 stops the passage of the PWM gate signal input to the AND circuit 50 as described above, and the drive of the IGBT element 21a is stopped. In this way, it is possible to prevent the IGBT element 21a from being destroyed by the excessive current flowing through the IGBT element 21a.

  The object of the present invention is to further improve the performance of the semiconductor device 90 shown in FIG. 20, in which an insulated gate transistor element and a diode element are formed on the same semiconductor substrate, and these are connected in antiparallel. A small-sized semiconductor device that has excellent responsiveness and can prevent an increase in loss during forward operation of a diode element and destruction of an insulated gate transistor element due to excessive current even when there is an instantaneous operation or excessive input The purpose is to provide.

The semiconductor device according to claim 1, wherein the insulated gate transistor element and the diode element are formed on the same semiconductor substrate, and the first current terminal of the insulated gate transistor element and the cathode terminal of the diode element are connected on the high potential side. A semiconductor device in which a second current terminal of the insulated gate transistor element and an anode terminal of the diode element are connected on a low potential side, wherein the diode element is a current proportional to a current flowing through the diode element. A sense anode terminal for taking out the gate electrode of the insulated gate transistor element when a first sense resistor is connected between the sense anode terminal and the anode terminal and a current flows through the diode element. The first control transistor for turning off the gate of the insulated gate transistor element. Register element is formed on the semiconductor substrate, a control terminal of the first control transistor element is connected to the anode terminal, the first current terminal of the first control transistor element is connected to said gate terminal, said The second current terminal of the first control transistor element is connected to the sense anode terminal .

  The semiconductor device is a semiconductor device in which an insulated gate transistor element and a diode element are formed on the same semiconductor substrate. In the semiconductor device, the first current terminal of the insulated gate transistor element and the cathode terminal of the diode element are connected on the high potential side, and the second current terminal of the insulated gate transistor element and the anode terminal of the diode element are on the low potential side. Connected with. That is, the insulated gate transistor element and the diode element in the semiconductor device are connected in antiparallel, and the semiconductor device is incorporated in an inverter circuit and controls a load by PWM (Pulse Width Modulation), as will be described later. Can be used as

In the semiconductor device, the diode element includes a sense anode terminal that extracts a current proportional to a current flowing through the diode element, and a first sense resistor is provided between the sense anode terminal and the anode terminal. Are connected, and when a forward current flows through the diode element, a first control transistor element is formed on the semiconductor substrate that lowers the potential of the gate terminal of the insulated gate transistor element to turn off the gate of the insulated gate transistor element. A control terminal of the first control transistor element is connected to the anode terminal; a first current terminal of the first control transistor element is connected to the gate terminal; and a second current of the first control transistor element A terminal is connected to the sense anode terminal .
In the semiconductor device, when a forward current flows through the diode element, a current proportional to the forward current also flows through the sense anode terminal (and thus the first sense resistor), and the control terminal of the first control transistor element− Since the voltage across the first sense resistor is applied between the second current terminals, the first control transistor element is turned on. As a result, the potential of the gate terminal of the insulated gate transistor element decreases, approaches the potential of the second current terminal of the insulated gate transistor element, the gate of the insulated gate transistor element turns off, and the forward direction of the diode element described above An effect of preventing an increase in loss during operation can be obtained.
Said first control transistor element in the semiconductor device is a semiconductor device in patent application mentioned above, PWM gate feedback circuit determines whether a current flows in the diode element, is input to the AND circuit in accordance with the determination result A function equivalent to the function of permitting or stopping the passage of the signal can be achieved. Therefore, in the semiconductor device as well, as in the above-mentioned patent-pending semiconductor device, when the diode element operates in the forward direction, the forward voltage increases by avoiding interference with the gate signal of the insulated gate transistor element. Therefore, an increase in loss during forward operation of the diode element can be prevented.

  On the other hand, the first control transistor element in the semiconductor device can perform the above function only by the first control transistor element unlike the feedback circuit in the above-mentioned patent pending semiconductor device, and can be downsized. Further, the first control transistor element can be disposed adjacent to the insulated gate transistor element or the diode element, and the wiring can be shortened. Therefore, the first control transistor element is excellent in responsiveness, and has instantaneous operation and excessive input. Also, it is possible to prevent an increase in loss during forward operation of the diode element.

In the semiconductor device, as described in claim 2 , when an excess current flows through the insulated gate transistor element, the potential of the gate terminal of the insulated gate transistor element is lowered to reduce the gate of the insulated gate transistor element. A second control transistor element that is turned off on the semiconductor substrate, and the insulated gate transistor element has a sense second current terminal that extracts a current proportional to a current flowing through the insulated gate transistor element. A second sense resistor is connected between the sense second current terminal and the second current terminal, a control terminal of the second control transistor element is connected to the sense second current terminal, and the second control A first current terminal of a transistor element is connected to the gate terminal, and a second current terminal of the second control transistor element is It is preferable that the serial which are connected to the second current terminal of the insulated-gate field effect transistor structure.

  In the semiconductor device, in addition to the effect of preventing the loss increase during the forward operation of the diode element described above, the second control transistor element can be used as an insulated gate transistor element similar to the feedback circuit in the above-mentioned patent pending semiconductor device. The overcurrent protection effect when an excess current flows can be exhibited. That is, in the semiconductor device, when an excess current flows through the insulated gate transistor element, a current proportional to the excess current also flows through the sense second current terminal (and hence the second sense resistor), and the second control transistor element. Since the voltage across the second sense resistor is applied between the control terminal and the second current terminal, the second control transistor element is turned on. As a result, the potential of the gate terminal of the insulated gate transistor element is lowered to approach the potential of the second current terminal of the insulated gate transistor element, the gate of the insulated gate transistor element is turned off, and an overcurrent protection effect is exhibited. can do.

On the other hand, the second control transistor element in the semiconductor device, unlike the feedback circuit in the above-mentioned patent-pending semiconductor device, can exhibit the above-described effect only by the second control transistor element, and can be downsized. . Further, the second control transistor element can be disposed adjacent to the insulated gate transistor element or the diode element, and the wiring can be shortened. Therefore, the second control transistor element is excellent in responsiveness, and has instantaneous operation and excessive input. Also, an overcurrent protection effect for the insulated gate transistor element can be exhibited.
The second control transistor element is, for example, a bipolar transistor element or a MOS transistor element, and a control terminal of the second control transistor element is a base terminal or a gate terminal, respectively. The first current terminal of the second control transistor element is a collector terminal or a drain terminal, respectively, and the second current terminal of the second control transistor element is an emitter terminal or a source terminal, respectively. Can do.
Further, the second control transistor element is arranged on the semiconductor substrate adjacent to the insulated gate transistor element or the diode element to shorten the wiring and enhance the responsiveness. It is preferable to be made.

The semiconductor device according to claim 5, wherein the insulated gate transistor element and the diode element are formed on the same semiconductor substrate, and the first current terminal of the insulated gate transistor element and the cathode terminal of the diode element are connected on the high potential side. A semiconductor device in which a second current terminal of the insulated gate transistor element and an anode terminal of the diode element are connected on a low potential side, wherein the diode element is a current proportional to a current flowing through the diode element. A sense anode terminal for taking out the current, and the insulated gate transistor element has a sense second current terminal for taking out a current proportional to a current flowing through the insulated gate transistor element. A first sense resistor is connected between the second current terminals, and the sense second current terminal Between the second current terminal, a second sense resistor is connected, the resistance value of the first sense resistor becomes set larger than the resistance value of the second sense resistor, a current flows through the diode element A first control transistor element that lowers the potential of the gate terminal of the insulated gate transistor element to turn off the gate of the insulated gate transistor element is formed on the semiconductor substrate, and controls the first control transistor element. A terminal is connected to the sense second current terminal, a first current terminal of the first control transistor element is connected to the gate terminal, and a second current terminal of the first control transistor element is connected to the anode terminal. It is characterized by being connected .

  In the semiconductor device, when a forward current flows through the diode element, a current proportional to the forward current also flows through the sense anode terminal (and hence the first sense resistor and the second sense resistor), and the first sense resistor Is larger than the resistance value of the second sense resistor, the first control transistor element in the semiconductor device operates as an inverse transistor, and the first control transistor element is turned on. As a result, the potential of the gate terminal of the insulated gate transistor element decreases, approaches the potential of the second current terminal of the insulated gate transistor element, the gate of the insulated gate transistor element turns off, and the forward direction of the diode element described above An effect of preventing an increase in loss during operation can be obtained.

In the semiconductor device, when an excess current flows through the insulated gate transistor element, a current proportional to the excess current also flows through the sense second current terminal (and hence the second sense resistor), and Since the voltage across the second sense resistor is applied between the control terminal and the second current terminal of the one control transistor element, the first control transistor element is turned on. As a result, the potential of the gate terminal of the insulated gate transistor element is lowered to approach the potential of the second current terminal of the insulated gate transistor element, the gate of the insulated gate transistor element is turned off, and an overcurrent protection effect is exhibited. can do.
The semiconductor device can also be used as a semiconductor device that is incorporated in an inverter circuit and performs PWM control of a load, similarly to the semiconductor device described in claim 1. The first control transistor element determines whether the feedback circuit has a current flowing through the diode element in the above-mentioned patent-pending semiconductor device, and the PWM gate signal input to the AND circuit according to the determination result. A function equivalent to the function of permitting or stopping the passage can be achieved. Therefore, in the semiconductor device as well, as in the above-mentioned patent-pending semiconductor device, when the diode element operates in the forward direction, the forward voltage increases by avoiding interference with the gate signal of the insulated gate transistor element. Therefore, an increase in loss during forward operation of the diode element can be prevented.
On the other hand, the first control transistor element in the semiconductor device can fulfill the above function only by the first control transistor element, unlike the feedback circuit in the above-mentioned patent pending semiconductor device, and can be downsized. Further, the first control transistor element can be disposed adjacent to the insulated gate transistor element or the diode element, and the wiring can be shortened. Therefore, the first control transistor element is excellent in responsiveness, and has instantaneous operation and excessive input. Also, it is possible to prevent an increase in loss during forward operation of the diode element .

In any of the above semiconductor devices, for example, as described in claim 6 , the insulated gate transistor element is an IGBT element or a vertical MOS transistor element, and the first current terminal of the insulated gate transistor element is a collector. A terminal or a drain terminal, and the second current terminal of the insulated gate transistor element may be an emitter terminal or a source terminal.

In any of the above semiconductor devices, for example, as in claim 7 , the first control transistor element is a bipolar transistor element or a MOS transistor element, and the control terminal of the first control transistor element is A base terminal or a gate terminal; a first current terminal of the first control transistor element is a collector terminal or a drain terminal; and a second current terminal of the first control transistor element is an emitter terminal or a source terminal. Is possible.

  In the semiconductor device, the first control transistor element is adjacent to the insulated gate transistor element or the diode element, so as to shorten the wiring and improve the responsiveness. It is preferable that it is arranged on a substrate.

In the semiconductor device, in order to suppress a parasitic thyristor operation, as described in claim 9 , an insulating trench is provided so as to surround the first control transistor element or the second control transistor element. It is preferable that it is arranged on a substrate. Furthermore, as described in claim 1 0, wherein the first control transistor element or the second control transistor element, by a buried insulating layer and the isolation trench, and more preferably formed by dielectric isolation. Further, as described in claim 1 1, directly below the first control transistor element or the second control transistor element, becomes disposed higher impurity concentration higher concentration layer in the same conductivity type as said semiconductor substrate Also with the configuration, parasitic thyristor operation can be suppressed.

As for the insulated gate field effect transistor, as claimed in claim 1 2, wherein the insulated-gate field effect transistor is, in the case of insulated gate field effect transistor of the trench gate structure, a channel formation layer of the insulated gate field effect transistor By adopting a structure in which a high concentration layer having the same conductivity type as the semiconductor substrate and a higher impurity concentration is disposed between the drift layers, parasitic thyristor operation can be suppressed.

  As described above, each of the above semiconductor devices is a semiconductor device in which an insulated gate transistor element and a diode element are formed on the same semiconductor substrate and are connected in antiparallel, and has excellent responsiveness. Even when there is an instantaneous operation or excessive input, the semiconductor device is a small semiconductor device that can prevent an increase in loss during forward operation of the diode element and destruction of the insulated gate transistor element due to excessive current.

Accordingly, the semiconductor device, as claimed in claim 1 3, is suitable for used in construction of the inverter circuit.

For example, as described in claim 1 4, wherein the inverter circuit, when an inverter circuit for generating a 3-phase AC, six of the semiconductor device, are integrated into one chip, the inverter circuit Can be configured. Further, as described in claim 1 5, three of the semiconductor device, are integrated into one chip, the inverter circuit 2 of the tip may be constituted. Thus, the inverter circuit can be reduced in size and the manufacturing cost can be reduced.

In this case, as described in claim 16 , the insulated gate transistor element and the diode element of each semiconductor device integrated on the one chip are arranged in a cross-sectional direction of the semiconductor substrate. Preferably, the semiconductor device is a vertical element through which a current flows, and each of the semiconductor devices is insulated and separated from each other by a through insulating trench penetrating the semiconductor substrate. As a result, a small inverter circuit capable of controlling a large current can be configured.

As described above, the semiconductor device, as claimed in claims 1-7, is used under severe conditions, it is suitable as a semiconductor device for use in vehicles inexpensive and compact with high reliability is required.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  FIG. 1 is an equivalent circuit diagram of a semiconductor device 60 which is an example of the present invention. In the semiconductor device 60 shown in FIG. 1, the same parts as those of the semiconductor device 90 shown in FIG.

  A semiconductor device 60 shown in FIG. 1 is a semiconductor device incorporated in an inverter circuit and used for PWM (Pulse Width Modulation) control of a load, and has an IGBT element 21 and a diode element 22 which are insulated gate transistor elements. . The IGBT element 21 and the diode element 22 are formed on the same semiconductor substrate and are connected in antiparallel. That is, as shown in FIG. 1, the collector (C) terminal that is the first current terminal of the IGBT element 21 and the cathode (K) terminal of the diode element 22 are connected on the high potential side, and the second of the IGBT element 21 is connected. An emitter (E) terminal 21a, which is a current terminal, and an anode (A) terminal 22a of the diode element 22 are connected on the low potential side. A specific element formation structure of the IGBT element 21 and the diode element 22 in the semiconductor device 60 may be, for example, the same structure as the semiconductor device 100 of FIG.

  Further, the semiconductor device 60 shown in FIG. 1 includes a bipolar transistor element ST1. The bipolar transistor element ST1 is also formed on the same semiconductor substrate as the IGBT element 21 and the diode element 22, and is disposed adjacent to the IGBT element 21 or the diode element 22 in order to shorten the wiring and improve the response. In the semiconductor device 60, the diode element 22 has a sense anode terminal 22 b that extracts a current proportional to the current flowing through the diode element 22, and the first sense resistor 31 is interposed between the sense anode terminal 22 b and the anode terminal 22. Is connected. The base (B) terminal that is the control terminal of the bipolar transistor element ST1 is connected to the anode terminal 22a, and the collector (C) terminal that is the first current terminal of the bipolar transistor element ST1 is the gate (G) terminal of the IGBT element 21. The emitter (E) terminal which is the second current terminal of the bipolar transistor element ST1 is connected to the sense anode terminal 22b. Needless to say, the first sense resistor 31 is also formed on the same semiconductor substrate as the IGBT element 21 and the diode element 22 as a thin film resistor element and a diffused resistor element.

  In the semiconductor device 60, by arranging the bipolar transistor element ST1 adjacent to the IGBT element 21 and the diode element 22, wiring inductance and wiring capacity are reduced, high speed operation is possible, and cost can be reduced. Become. In particular, when the semiconductor device 60 is incorporated in an inverter circuit and inductance load control of a motor or the like is performed, an instantaneous large current such as an inrush current or a flyback current can be controlled as follows.

  The bipolar transistor element ST1 in the semiconductor device 60 of FIG. 1 lowers the potential of the gate (G) terminal of the IGBT element 21 and turns off the gate of the IGBT element 21 when a forward current flows through the diode element 22. 1 Functions as a control transistor element. That is, in the semiconductor device 60, when a forward current flows through the diode element 22, a current proportional to the forward current also flows through the sense anode terminal 22b (and hence the first sense resistor 31). At this time, since the voltage across the first sense resistor 31 is applied between the base terminal and the emitter terminal of the bipolar transistor element ST1, the bipolar transistor element ST1 is turned on. As a result, the potential of the gate terminal of the IGBT element 21 decreases, approaches the potential of the emitter terminal 21a of the IGBT element 21, and the gate of the IGBT element 21 is turned off.

  With the above function, the bipolar transistor element ST1 in the semiconductor device 60 determines whether the feedback circuit 40 has a current flowing in the diode element 22 in the semiconductor device 90 in the patent application shown in FIG. 20, and according to the determination result. A function equivalent to the function of permitting or stopping the passage of the PWM gate signal input to the AND circuit 50 can be achieved. Therefore, in the semiconductor device 60 of FIG. 1, as with the patent-pending semiconductor device 90 shown in FIG. 20, when the diode element 22 operates in the forward direction, interference with the gate signal of the IGBT element 21 is avoided. Thus, an increase in forward voltage can be avoided, and an increase in loss during forward operation of the diode element 22 can be prevented.

  On the other hand, the bipolar transistor element ST1 in the semiconductor device 60, unlike the feedback circuit 40 in the semiconductor device 90 in the patent application shown in FIG. 20, can perform the above-described function only by the bipolar transistor element ST1, and can be downsized. It is. Further, the bipolar transistor element ST1 can be disposed adjacent to the IGBT element 21 and the diode element 22, and the wiring can be shortened. Therefore, the bipolar transistor element ST1 is excellent in responsiveness, and even when there is instantaneous operation or excessive input. It is possible to prevent an increase in forward operation loss of the diode element 22.

  FIG. 2 is a variation of the semiconductor device 60 shown in FIG. 1 and is an equivalent circuit diagram of the semiconductor device 61. In the semiconductor device 61 shown in FIG. 2, the same parts as those of the semiconductor device 60 shown in FIG.

  The semiconductor device 61 shown in FIG. 2 has a configuration further including a bipolar transistor element ST2 in addition to the configuration of the semiconductor device 60 shown in FIG. The bipolar transistor element ST2 is also formed on the same semiconductor substrate as the IGBT element 21 and the diode element 22, and is arranged adjacent to the IGBT element 21 or the diode element 22 in order to shorten the wiring and improve the response. In the semiconductor device 61 of FIG. 2, the IGBT element 21 has a sense emitter terminal 21b for taking out a current proportional to the current flowing through the IGBT element 21, and the second is provided between the sense emitter terminal 21b and the emitter terminal 21a. A sense resistor 32 is connected. The base (B) terminal that is the control terminal of the bipolar transistor element ST2 is connected to the sense anode terminal 21b, and the collector (C) terminal that is the first current terminal of the bipolar transistor element ST2 is the gate (G) of the IGBT element 21. The emitter (E) terminal which is connected to the terminal and is the second current terminal of the bipolar transistor element ST2 is connected to the emitter (E) terminal of the IGBT element 21. Needless to say, the second sense resistor 32 is also formed on the same semiconductor substrate as the IGBT element 21 and the diode element 22 as a thin film resistor element and a diffused resistor element.

  The bipolar transistor element ST2 in the semiconductor device 61 of FIG. 2 lowers the potential of the gate (G) terminal of the IGBT element 21 and turns off the gate of the IGBT element 21 when an excessive current flows through the IGBT element 21. It functions as a second control transistor element. That is, in the semiconductor device 61, not only the above-described effect of preventing the loss increase during the forward operation of the diode element 22, but also the feedback circuit 40 in the semiconductor device 90 in the patent application shown in FIG. The overcurrent protection effect when an excessive current flows through the similar IGBT element 21 can be exhibited. That is, in the semiconductor device 61, when an excess current flows through the IGBT element 21, a current proportional to the excess current also flows through the sense emitter terminal 21b (and hence the second sense resistor 32). At this time, since the voltage across the second sense resistor 32 is applied between the base terminal and the emitter terminal of the bipolar transistor element ST2, the bipolar transistor element ST2 is turned on. As a result, the potential of the gate terminal of the IGBT element 21 is lowered to approach the potential of the emitter terminal 21a of the IGBT element 21, and the gate of the IGBT element 21 is turned off, thereby exhibiting an overcurrent protection effect. .

  On the other hand, the bipolar transistor element ST2 in the semiconductor device 61 of FIG. 2 can exhibit the above-described effect only by the second control transistor element, unlike the feedback circuit 40 in the semiconductor device 90 in the patent application shown in FIG. The size can be reduced. Further, the bipolar transistor element ST2 can be disposed adjacent to the IGBT element 21 and the diode element 22, and the wiring can be shortened. Therefore, the bipolar transistor element ST2 is excellent in responsiveness, and even when there is instantaneous operation or excessive input. The overcurrent protection effect for the element 21 can be exhibited.

  FIG. 3 is an equivalent circuit diagram of the semiconductor device 70 as another example of the semiconductor device. In the semiconductor device 70 shown in FIG. 3, the same parts as those of the semiconductor devices 60 and 61 shown in FIG. 1 and FIG.

  A semiconductor device 70 shown in FIG. 3 includes a bipolar transistor element ST3 together with an IGBT element 21 and a diode element 22 connected in antiparallel. The bipolar transistor element ST3 is also formed on the same semiconductor substrate as the IGBT element 21 and the diode element 22, and is disposed adjacent to the IGBT element 21 or the diode element 22 in order to shorten the wiring and improve the response. Also in the semiconductor device 70, the diode element 22 has a sense anode terminal 22b, and the IGBT element 21 has a sense emitter terminal 21b. A first sense resistor 33 is connected between the sense anode terminal 22 b of the diode element 22 and the sense emitter terminal 21 b of the IGBT element 21, and between the sense emitter terminal 21 b of the IGBT element 21 and the emitter terminal 21 a of the IGBT element 21. The second sense resistor 34 is connected. The resistance value R1 of the first sense resistor 33 is set larger than the resistance value R2 of the second sense resistor 34. The base (B) terminal which is the control terminal of the bipolar transistor element ST3 is connected to the sense emitter terminal 21b, and the collector (C) terminal which is the first current terminal of the bipolar transistor element ST3 is the gate (G) of the IGBT element 21. The emitter (E) terminal, which is the second current terminal of the bipolar transistor element ST3, is connected to the anode terminal 22a of the diode element 22 and is connected to the terminal. Needless to say, the first sense resistor 33 and the second sense resistor 34 are also formed on the same semiconductor substrate as the IGBT element 21 and the diode element 22 as thin film resistor elements and diffused resistor elements.

  In the semiconductor device 70 shown in FIG. 3, when a forward current flows through the diode element 22, the sense anode terminal 22b (and hence the first sense resistor 33 and the second sense resistor 34) is also proportional to the forward current. Current flows. At this time, since the resistance value R1 of the first sense resistor 33 is larger than the resistance value R2 of the second sense resistor 34, the bipolar transistor element ST3 in the semiconductor device 70 operates as an inverse transistor, and the bipolar transistor element ST3 is turned on. It will be. As a result, the potential of the gate terminal of the IGBT element 21 decreases, approaches the potential of the emitter terminal 21a of the IGBT element 21, and the gate of the IGBT element 21 is turned off. The effect of preventing an increase in loss will be obtained.

  In the semiconductor device 70, when an excess current flows through the IGBT element 21, a current proportional to the excess current also flows through the sense emitter terminal 21b (and hence the second sense resistor 34). At this time, since the voltage across the second sense resistor 34 is applied between the base terminal and the emitter terminal of the bipolar transistor element ST3 in the semiconductor device 70, the bipolar transistor element ST3 is turned on. As a result, the potential of the gate terminal of the IGBT element 21 is lowered to approach the potential of the emitter terminal 21a of the IGBT element 21, and the gate of the IGBT element 21 is turned off, thereby exhibiting an overcurrent protection effect. .

  In each of the semiconductor devices 60, 61, and 70 shown in FIGS. 1 to 3, an example using the IGBT element 21 as an insulated gate transistor element is shown. The insulated gate transistor element is not limited to this, and may be, for example, a vertical MOS transistor element. In this case, the collector (C) terminal which is the first current terminal of the IGBT element 21 is used as the drain terminal of the vertical MOS transistor, and the emitter (E) terminal 21a which is the second current terminal of the IGBT element 21 is used as the vertical MOS transistor. The source terminal of the transistor.

  Also, in each of the semiconductor devices 60, 61, and 70 shown in FIGS. 1 to 3, examples in which bipolar transistor elements ST1 to ST3 are used as control transistor elements are shown. The control transistor element is not limited to this, and may be, for example, a MOS transistor element. In this case, the base (B) terminal which is the control terminal of the bipolar transistor elements ST1 to ST3 is used as the gate terminal of the MOS transistor element, and the collector (C) terminal which is the first current terminal of the bipolar transistor elements ST1 to ST3 is used as the MOS. The drain terminal of the transistor element is used, and the emitter (E) terminal, which is the second current terminal of the bipolar transistor elements ST1 to ST3, is used as the source terminal of the MOS transistor element.

  Next, a preferred structural example relating to the semiconductor devices 60, 61, and 70 shown by equivalent circuits in FIGS.

  4 is a structural example of the semiconductor device 61 shown in the equivalent circuit of FIG. 2. FIG. 4A is a bottom view schematically showing the semiconductor device 61a, and FIG. It is sectional drawing in the dashed-dotted line AA of (a). FIG. 5 is a schematic top view of the semiconductor device 61a. 4 and 5, the first sense resistor 31 and the second sense resistor 32 in the semiconductor device 61 of FIG. 2 are not shown for easy viewing. As described above, the first sense resistor 31 and the second sense resistor 32 are formed adjacent to the IGBT region and the diode region as thin film resistor elements or diffused resistor elements.

  In the semiconductor device 61a, as shown in FIG. 4A, the main IGBT region and the diode region are arranged on the right side of the drawing. Further, on the left side of the figure, an IGBT sense region, a diode sense region, a control transistor ST1 region, and a control transistor ST2 region related to control are arranged adjacent to the IGBT region. Note that more specific cross-sectional structures of the IGBT region, the diode region, the IGBT sense region, and the diode sense region shown in FIG. 4B may be the same as the cross-sectional structure of the semiconductor device 100 shown in FIG. 19, for example. . In FIG. 5, an example of the wiring pattern on the main surface side of the semiconductor device 61a is indicated by a thick solid line. The English symbols shown in the figure correspond to the terminals of each element shown in FIG.

  FIGS. 6A, 6B and 7 are bottom views schematically showing semiconductor devices 61b to 61d, respectively, in another arrangement example of the main IGBT region and the diode region.

  In the semiconductor device 61b shown in FIG. 6A, the main IGBT region and the diode region are separated from each other so as to sandwich the IGBT sense region related to control, the diode sense region, the control transistor ST1 region, and the control transistor ST2 region. Yes.

  In the semiconductor device 61c shown in FIG. 6B, the IGBT region and the diode region are arranged in a U shape, and an IGBT sense region, a diode sense region, a control transistor ST1 region, and a control transistor ST2 related to control are arranged inside the U shape. The area is arranged.

  In the semiconductor device 61d shown in FIG. 7, the IGBT region and the diode region are arranged in a square shape, and the IGBT sense region, the diode sense region, the control transistor ST1 region, and the control transistor ST2 region related to control are arranged inside the square shape. Has been.

  The semiconductor devices 61b to 61d in FIGS. 6A, 6B, and 7 are also similar to the semiconductor device 61a in FIG. 4, and the IGBT sense region, the diode sense region, the control transistor ST1 region, and the control transistor ST2 region relating to control. Is arranged adjacent to the IGBT region. For this reason, the semiconductor device is excellent in responsiveness and capable of simultaneous operation of each cell.

  Next, an example of a preferable structure for suppressing the parasitic thyristor operation in the semiconductor devices 60, 61, and 70 shown in FIGS.

  FIGS. 8A to 8C are diagrams showing a preferable structure example of the bipolar transistor element ST1 in the semiconductor device 61 of FIG. 2, and are schematic cross-sectional views of the bipolar transistor elements ST1a to ST1c, respectively. Each figure corresponds to a cross-sectional view taken along one-dot chain line BB in FIG.

  In FIG. 8A, an insulating trench ZT is disposed in the semiconductor substrate 1 so as to surround the bipolar transistor element ST1a. In FIG. 8B, the bipolar transistor element ST1a is insulated and isolated by the buried insulating layer ZU and the insulating trench ZT. In FIG. 8C, high-concentration layers N1 and N2 having the same conductivity type as the semiconductor substrate 1 and having a higher impurity concentration are disposed immediately below the bipolar transistor element ST1a. These structural elements can suppress a parasitic thyristor operation when the bipolar transistor elements ST1a to ST1c are arranged adjacent to the IGBT region or the diode region. Note that the parasitic thyristor operation can be suppressed by adding the above structural elements to the other control transistor elements in the semiconductor devices 60, 61, and 70 of FIGS.

  FIG. 9 is a diagram showing a preferred structure example of the IGBT region and the diode region in the semiconductor device 61a of FIG. 4, and is a schematic diagram of the semiconductor device 101 that constitutes the IGBT region and the diode region corresponding to the semiconductor device 100 of FIG. FIG.

  In the semiconductor device 101 shown in FIG. 9, the impurity concentration is higher than that of the semiconductor device 100 shown in FIG. 19 between the channel formation layer 2 a of the IGBT element and the drift layer (semiconductor substrate) 1 and with the same conductivity type as the semiconductor substrate 1. High-concentration layer 1a is disposed. This also can suppress a parasitic thyristor operation constituted by the semiconductor device 101 constituting the IGBT region and the diode region and other control transistor elements.

  As described above, each of the semiconductor devices described above is a semiconductor device in which an insulated gate transistor element and a diode element are formed on the same semiconductor substrate and are connected in antiparallel, and has excellent responsiveness. Thus, even when there is an instantaneous operation or excessive input, the semiconductor device is a small semiconductor device that can prevent an increase in loss during forward operation of the diode element and destruction of the insulated gate transistor element due to excessive current.

  Therefore, the semiconductor device is suitable for use in the configuration of an inverter circuit.

  Next, a preferred example of the semiconductor devices 60, 61, and 70 shown in FIGS.

  FIG. 10 is a circuit diagram showing main components of the inverter circuit K1 that generates a three-phase alternating current. The inverter circuit K1 shown in FIG. 10 includes six semiconductor devices 80a to 80f similar to the semiconductor devices 60, 61, and 70 shown in FIGS. In FIG. 10, for the sake of simplification, illustration of control transistors and the like of the semiconductor devices 80a to 80f corresponding to the control transistors ST1 to ST3 of FIGS. 1 to 3 is omitted, and IGBTs of the semiconductor devices 80a to 80f are omitted. Only the diode is shown.

  In the inverter circuit K1 of FIG. 10, the IGBTs of the semiconductor devices 80a to 80c constituting the upper arm are connected to the power supply potential Vcc with the collector (C) connected in common. The IGBTs of the semiconductor devices 80d to 80f constituting the lower arm are connected to the ground potential GND with the emitter (E) connected in common. The three-phase AC outputs U, V, and W of the inverter circuit K1 are taken out from the connection points of the upper arm semiconductor devices 80a to 80c and the lower arm semiconductor devices 80d to 80f as shown in FIG. Connected. The diodes connected in antiparallel to the IGBTs of the semiconductor devices 80a to 80f function as so-called free wheel diodes (FWD).

  FIG. 11 is a schematic top view of the semiconductor chip IC1 in which the inverter circuit K1 of FIG. 10 is configured. 12 is a schematic cross-sectional view taken along one-dot chain line CC in FIG.

  A semiconductor chip IC1 shown in FIG. 11 is obtained by integrating the inverter circuit K1 of FIG. 10 including six semiconductor devices 80a to 80f on a single chip. In the semiconductor chip IC1 of FIG. 11, the IGBTs and diodes of the semiconductor devices 80a to 80f are respectively disposed in the power element regions PKa to PKf that are insulated and separated by the through insulation trenches ZK that penetrate the semiconductor substrate, and are insulated from each other. Has been. As a result, the inverter circuit K1 capable of small size and large current control can be configured. Also, the control transistors and the like of the semiconductor devices 80a to 80f corresponding to the control transistors ST1 to ST3 of FIGS. 1 to 3 are collectively arranged in the control element region SK at the center of the semiconductor chip IC1.

  As shown in FIG. 12, a vertical IGBT element and a diode element are integrally formed in the power element region of the semiconductor chip IC1. The structure of the IGBT element and the diode element in the power element region of FIG. 12 is basically the same as the structure described in the semiconductor device 100 of FIG. The IGBT element has an emitter (E) terminal and a gate (G) terminal on the main surface side, and a collector (C) terminal on the back surface side, and outputs to the outside through conductor films 10 and 11 made of, for example, aluminum.

  In the control element region of FIG. 12, a lateral control transistor is formed in the SOI layer on the buried insulating layer ZU. In FIG. 12, a MOS transistor ST1d is illustrated as the control transistor. Note that the back side of the control element region is protected by an insulating film ZU.

  Further, FIG. 12 shows an example of connection between the control transistor, the IGBT, and the diode. The resistor 31 shown in the figure corresponds to the first sense resistor 31 shown in FIG. The resistor 31 selects a desired resistance value in the range of several tens of Ω to several kiloΩ. The resistor 31 may be a diffused resistor, a polysilicon resistor, or a thin film resistor. The resistor 31 may be formed in the control element region or in the power element region. The MOS transistor ST1d has a drain D (N +), a gate G, and a source S (N +) from the right. When an NPN transistor is used instead of the MOS transistor ST1d, the collector C, base B, and emitter E are used from the right. In this case, as shown in FIG. 1, the collector C is connected to the gate G of the IGBT element 21, the base B is connected to the emitter E of the IGBT element 21, and the emitter E is connected to the resistor 31 and the sense anode terminal 22b of the diode element 22. It will be.

  As shown in FIG. 12, the vertical IGBT element and the diode element formed in the power element region of the semiconductor chip IC1 are insulated and separated by a through insulation trench ZK penetrating the semiconductor substrate. For example, in the case of a hybrid electric vehicle, it is expected that a voltage of about 1200 V is applied to the IGBT formed in the adjacent power element regions PKa to PKf shown in FIG. In this case, a plurality of through insulating trenches ZK or thick through insulating trenches ZK are used. Further, not only between the power element regions PKa to PKf but also between the power element regions PKa to PKf and the control element region SK are insulated and separated by the through insulating trench ZK.

  FIG. 13 is a diagram for explaining the electrode arrangement and the external extraction terminal of the semiconductor chip IC1 shown in FIG. FIG. 13A is a circuit diagram of the inverter circuit K1 formed in the same semiconductor chip IC1 as FIG. 10, FIG. 13B is a bottom view of the semiconductor chip IC1, and FIG. 2 is a top view of the semiconductor chip IC1. FIG. In addition, in FIG.13 (b) and FIG.13 (c), each electrode is shown by the thick line.

  As shown in FIG. 13A, the IGBT formed in the semiconductor chip IC1 is an N-channel (Nch) IGBT in both the upper arm and the lower arm. For this reason, as shown in FIG. 13B, the IGBT formed in the power element regions PKa to PKc corresponding to the upper arm is a common collector (C) of Nch, and as shown in FIG. IGBTs formed in the power element regions PKd to PKf corresponding to the lower arm are Nch common emitters (E). The Nch common collector (C) is connected to the power supply Vcc terminal, and the Nch common emitter (E) is grounded (GND). Further, the IGBT collector (C) formed in the power element regions PKd to PKf corresponding to the lower arm in FIG. 13B and the power element regions PKa to PKc corresponding to the upper arm in FIG. The IGBT emitters (E) are connected in common and the three-phase AC outputs U, V, W are taken out.

  FIG. 14 is an example of a semiconductor chip on which an inverter circuit having another configuration is formed, and is a diagram for explaining an electrode arrangement and an external extraction terminal of the semiconductor chip IC2. 14A is a circuit diagram of an inverter circuit formed in the semiconductor chip IC2, FIG. 14B is a bottom view of the semiconductor chip IC2, and FIG. 14C is a diagram of the semiconductor chip IC2. It is a top view. In FIG. 14B and FIG. 14C, each electrode is indicated by a bold line.

  As shown in FIG. 14A, the IGBT formed on the semiconductor chip IC2 is an N-channel (Nch) IGBT with an upper arm and a P-channel (Pch) IGBT with a lower arm. An N-channel IGBT has a P-type body region and an N-type emitter region formed on the main surface side of an N-type semiconductor layer, and a P-type collector region and an N-type diode formed by ion implantation on the back surface side. A cathode region is formed. In the P-channel IGBT, an N-type body region and a P-type emitter region are formed on the main surface side of a P-type semiconductor layer, and an N-type collector region and a diode P-type anode are formed on the back surface side by ion implantation. Form a region. Therefore, in the semiconductor chip IC2 of FIG. 14A, as shown in FIG. 14C, the IGBT formed in the power element regions PKa to PKc corresponding to the upper arm is an Nch common collector (C). The IGBT formed in the power element regions PKd to PKf corresponding to the lower arm is a common collector (C) of Pch. The Nch common collector (C) is connected to the power supply Vcc terminal, and the Pch common collector (C) is grounded (GND). Further, as shown in FIG. 14B, an IGBT emitter (E) formed in the power element regions PKd to PKf corresponding to the lower arm and an IGBT formed in the power element regions PKa to PKc corresponding to the upper arm. Emitters (E) are connected in common, and three-phase AC outputs U, V, W are taken out.

  In the semiconductor chips IC1 and IC2 shown in FIGS. 11 to 14, six semiconductor devices are integrated on one chip to constitute the inverter circuit K1 shown in FIG.

  FIGS. 15 to 18 show another example, in which three semiconductor devices are integrated on one chip, and the inverter circuit K1 shown in FIG. 10 is configured by two chips. .

  FIGS. 15A and 15B are circuit diagrams of the semiconductor chips IC3u and IC3d corresponding to the upper arm and the lower arm in the inverter circuit K1 of FIG. 10, respectively. FIG. 16 is a diagram for explaining the electrode arrangement and the external extraction terminal of the semiconductor chip IC3u. FIGS. 16A and 16B are a top view and a bottom view of the semiconductor chip IC3u, respectively. FIG. 17 is a diagram for explaining the electrode arrangement and the external extraction terminal of the semiconductor chip IC3d. FIGS. 17A and 17B are a top view and a bottom view of the semiconductor chip IC3d, respectively. In FIGS. 16 and 17, each electrode is indicated by a bold line. FIG. 18 shows an example in which the semiconductor chips IC3u and IC3d of FIGS. 16 and 17 are mounted in one package. FIGS. 18A and 18B are a top view and a bottom view, respectively.

  For the semiconductor chips IC3u and IC3d in which the three semiconductor devices shown in FIGS. 15 to 18 are integrated on one chip, the semiconductor chips IC3u and IC3d are combined and wired as shown in FIG. The inverter circuit K1 shown in FIG. 10 can be configured.

  As described above, the inverter circuit K1 of FIG. 10 is configured by integrating six semiconductor devices on one chip, or integrating three semiconductor devices on one chip and using two chips. Can be configured. Thereby, the inverter circuit K1 can be reduced in size, and the manufacturing cost can be reduced.

  As described above, the semiconductor device is suitable for use as an in-vehicle semiconductor device that is used under severe conditions and is required to be inexpensive, small, and highly reliable.

It is an equivalent circuit diagram of the semiconductor device 60 which is an example of the present invention. FIG. 5 is a modified example of the semiconductor device 60 shown in FIG. 1, and is an equivalent circuit diagram of a semiconductor device 61. FIG. 5 is an equivalent circuit diagram of a semiconductor device 70 as another example of the semiconductor device. 2A is a bottom view schematically showing the semiconductor device 61a, and FIG. 2B is a dashed-dotted line A-A in the structural example of the semiconductor device 61 shown in the equivalent circuit of FIG. FIG. It is a typical top view of semiconductor device 61a. (A), (b) is another example of arrangement | positioning of the main IGBT area | region and a diode area | region, and is the bottom view which showed typically the semiconductor devices 61b and 61c, respectively. In another arrangement example of the main IGBT region and the diode region, each is a bottom view schematically showing a semiconductor device 61d. (A)-(c) is the figure which showed the preferable structural example of bipolar transistor element ST1 in the semiconductor device 61 of FIG. 2, and is typical sectional drawing of bipolar transistor element ST1a-ST1c, respectively. FIG. 5 is a diagram showing a preferable structure example of an IGBT region and a diode region in the semiconductor device 61a of FIG. It is the circuit diagram which showed the main components of the inverter circuit K1 which produces | generates 3 phase alternating current. FIG. 11 is a schematic top view of a semiconductor chip IC1 in which the inverter circuit K1 of FIG. 10 is configured. It is typical sectional drawing in the dashed-dotted line CC of FIG. It is a figure explaining the electrode arrangement | positioning and external extraction terminal of semiconductor chip IC1 shown in FIG. (A) is a circuit diagram of the inverter circuit K1 formed in the same semiconductor chip IC1 as FIG. 10, (b) is a bottom view of the semiconductor chip IC1, and (c) is an upper surface of the semiconductor chip IC1. FIG. It is an example of the semiconductor chip in which the inverter circuit of another structure was formed, and is a figure explaining the electrode arrangement | positioning and external extraction terminal of semiconductor chip IC2. (A) is a circuit diagram of an inverter circuit formed in the semiconductor chip IC2, (b) is a bottom view of the semiconductor chip IC2, and (c) is a top view of the semiconductor chip IC2. In another example, (a) and (b) are circuit diagrams of semiconductor chips IC3u and IC3d corresponding to the upper arm and the lower arm in the inverter circuit K1 of FIG. 10, respectively. FIGS. 4A and 4B are diagrams for explaining an electrode arrangement and an external extraction terminal of the semiconductor chip IC3u, and FIGS. 5A and 5B are a top view and a bottom view of the semiconductor chip IC3u, respectively. FIGS. 4A and 4B are diagrams for explaining an electrode arrangement and an external extraction terminal of the semiconductor chip IC3d. FIGS. 5A and 5B are a top view and a bottom view of the semiconductor chip IC3d, respectively. In the example where the semiconductor chips IC3u and IC3d are mounted in one package, (a) and (b) are a top view and a bottom view, respectively. 1 is a schematic cross-sectional view of a semiconductor device 100 disclosed in Patent Document 1. FIG. FIG. 3 is a circuit diagram of a semiconductor device 90 pending for patent.

Explanation of symbols

60, 61, 70, 80a to 80f, 90 Semiconductor device 21 IGBT element (insulated gate transistor element)
21b Sense emitter terminal 22 Diode element 22b Sense anode terminal ST1 to ST3 Bipolar transistor element (control transistor element)
31-34 Sense resistance IC1, IC2, IC3u, IC3d Semiconductor chip ZK Through-insulation trench PKa-PKf Power element area SK Control element area

Claims (17)

The insulated gate transistor element and the diode element are formed on the same semiconductor substrate,
The first current terminal of the insulated gate transistor element and the cathode terminal of the diode element are connected on the high potential side, and the second current terminal of the insulated gate transistor element and the anode terminal of the diode element are connected on the low potential side. A semiconductor device comprising:
The diode element has a sense anode terminal for extracting a current proportional to a current flowing through the diode element;
A first sense resistor is connected between the sense anode terminal and the anode terminal,
A first control transistor element that lowers the potential of the gate terminal of the insulated gate transistor element and turns off the gate of the insulated gate transistor element when a current flows through the diode element is formed on the semiconductor substrate ;
The control terminal of the first control transistor element is connected to the anode terminal, the first current terminal of the first control transistor element is connected to the gate terminal, and the second current terminal of the first control transistor element is A semiconductor device connected to the sense anode terminal . When an excessive current flows through the insulated gate transistor element, a second control transistor element is formed on the semiconductor substrate that lowers the potential of the gate terminal of the insulated gate transistor element to turn off the gate of the insulated gate transistor element. Being
The insulated gate transistor element has a sense second current terminal for extracting a current proportional to a current flowing through the insulated gate transistor element;
A second sense resistor is connected between the sense second current terminal and the second current terminal,
A control terminal of the second control transistor element is connected to the sense second current terminal, a first current terminal of the second control transistor element is connected to the gate terminal, and a second of the second control transistor element The semiconductor device according to claim 1 , wherein a current terminal is connected to a second current terminal of the insulated gate transistor element . The second control transistor element is a bipolar transistor element or a MOS transistor element;
The control terminals of the second control transistor elements are base terminals or gate terminals, respectively;
The first current terminal of the second control transistor element is a collector terminal or a drain terminal, respectively;
3. The semiconductor device according to claim 2, wherein the second current terminal of the second control transistor element is an emitter terminal or a source terminal, respectively . The second control transistor element, said insulated-gate field effect transistor or adjacent to the diode element, the semiconductor device according to claim 2 or 3, characterized in that disposed on the semiconductor substrate. The insulated gate transistor element and the diode element are formed on the same semiconductor substrate,
The first current terminal of the insulated gate transistor element and the cathode terminal of the diode element are connected on the high potential side, and the second current terminal of the insulated gate transistor element and the anode terminal of the diode element are connected on the low potential side. A semiconductor device comprising:
The diode element has a sense anode terminal for extracting a current proportional to a current flowing through the diode element;
The insulated gate transistor element has a sense second current terminal for extracting a current proportional to a current flowing through the insulated gate transistor element;
A first sense resistor is connected between the sense anode terminal and the sense second current terminal,
A second sense resistor is connected between the sense second current terminal and the second current terminal,
A resistance value of the first sense resistor is set larger than a resistance value of the second sense resistor;
A first control transistor element that lowers the potential of the gate terminal of the insulated gate transistor element and turns off the gate of the insulated gate transistor element when a current flows through the diode element is formed on the semiconductor substrate;
A control terminal of the first control transistor element is connected to the sense second current terminal, a first current terminal of the first control transistor element is connected to the gate terminal, and a second of the first control transistor element current terminal, a semi-conductor device characterized by comprising connected to the anode terminal. The insulated gate transistor element is an IGBT element or a vertical MOS transistor element;
A first current terminal of the insulated gate transistor element is a collector terminal or a drain terminal;
6. The semiconductor device according to claim 1, wherein the second current terminal of the insulated gate transistor element is an emitter terminal or a source terminal . The first control transistor element is a bipolar transistor element or a MOS transistor element;
A control terminal of the first control transistor element is a base terminal or a gate terminal;
A first current terminal of the first control transistor element is a collector terminal or a drain terminal;
The second current terminal of the first control transistor element, the semiconductor device according to any one of claims 1 to 6, characterized in that the emitter terminal or source terminal.   The semiconductor device according to claim 1, wherein the first control transistor element is disposed on the semiconductor substrate adjacent to the insulated gate transistor element or the diode element. . So as to surround said first control transistor element or the second control transistor element, an insulating trench, a semiconductor according to any one of claims 1 to 8, characterized by being disposed on the semiconductor substrate apparatus. The first control transistor element or the second control transistor element, by a buried insulating layer and the isolation trench, the semiconductor device according to claim 9, characterized by being dielectrically isolated. Immediately below the first control transistor element or the second control transistor element, any of claims 1 to 10 wherein the higher-impurity concentration in the same conductivity type as the semiconductor substrate heavily doped layer is characterized by comprising disposed the semiconductor device according to an item or. The insulated gate transistor element is an insulated gate transistor element having a trench gate structure;
Between the channel formation layer and the drift layer of the insulated gate field effect transistor, any one of claims 1 to 11 wherein the higher-impurity concentration in the same conductivity type as the semiconductor substrate heavily doped layer is characterized by comprising disposed The semiconductor device according to one item. The semiconductor device according to claim 1 , wherein the semiconductor device is used for a configuration of an inverter circuit . The inverter circuit is an inverter circuit for generating a three-phase alternating current;
14. The semiconductor device according to claim 13 , wherein the six inverters are configured by integrating six semiconductor devices on one chip . The inverter circuit is an inverter circuit for generating a three-phase alternating current;
14. The semiconductor device according to claim 13 , wherein the three semiconductor devices are integrated on a single chip, and the inverter circuit is configured by the two chips . The insulated gate transistor element and the diode element of each semiconductor device integrated on the one chip are vertical elements in which a current flows in a cross-sectional direction of the semiconductor substrate;
16. The semiconductor device according to claim 14 , wherein each of the semiconductor devices is insulated and separated from each other by a through insulating trench penetrating the semiconductor substrate . Said semiconductor device, a semiconductor device according to any one of claims 1 to 16, characterized in that it is mounted on a vehicle.

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