DE112013004223A5 - Optoelektronisches Halbleiterbauteil - Google Patents
Optoelektronisches Halbleiterbauteil Download PDFInfo
- Publication number
- DE112013004223A5 DE112013004223A5 DE112013004223.1T DE112013004223T DE112013004223A5 DE 112013004223 A5 DE112013004223 A5 DE 112013004223A5 DE 112013004223 T DE112013004223 T DE 112013004223T DE 112013004223 A5 DE112013004223 A5 DE 112013004223A5
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- optoelectronic semiconductor
- optoelectronic
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012215524.4A DE102012215524A1 (de) | 2012-08-31 | 2012-08-31 | Optoelektronisches Halbleiterbauteil |
DE102012215524.4 | 2012-08-31 | ||
PCT/EP2013/067812 WO2014033166A1 (de) | 2012-08-31 | 2013-08-28 | Optoelektronisches halbleiterbauteil |
Publications (2)
Publication Number | Publication Date |
---|---|
DE112013004223A5 true DE112013004223A5 (de) | 2015-09-24 |
DE112013004223B4 DE112013004223B4 (de) | 2023-08-31 |
Family
ID=49035605
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102012215524.4A Withdrawn DE102012215524A1 (de) | 2012-08-31 | 2012-08-31 | Optoelektronisches Halbleiterbauteil |
DE112013004223.1T Active DE112013004223B4 (de) | 2012-08-31 | 2013-08-28 | Optoelektronisches Halbleiterbauteil und Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102012215524.4A Withdrawn DE102012215524A1 (de) | 2012-08-31 | 2012-08-31 | Optoelektronisches Halbleiterbauteil |
Country Status (6)
Country | Link |
---|---|
US (1) | US9209368B2 (de) |
JP (1) | JP6029760B2 (de) |
KR (1) | KR101642867B1 (de) |
CN (1) | CN104737314B (de) |
DE (2) | DE102012215524A1 (de) |
WO (1) | WO2014033166A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014174400A1 (en) * | 2013-04-23 | 2014-10-30 | Koninklijke Philips N.V. | Side interconnect for light emitting device |
DE102014102029A1 (de) * | 2014-02-18 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement |
DE102014113844B4 (de) | 2014-09-24 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE102014116079A1 (de) * | 2014-11-04 | 2016-05-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102014116134A1 (de) | 2014-11-05 | 2016-05-12 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE102014116778A1 (de) | 2014-11-17 | 2016-05-19 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Konversionselements, Konversionselement sowie optoelektronisches Bauelement mit einem solchen Konversionselement |
DE102014117764A1 (de) | 2014-12-03 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes optoelektronisches Halbleiterbauteil und Verfahren zu dessen Herstellung |
DE102015101070A1 (de) | 2015-01-26 | 2016-07-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102015107742A1 (de) | 2015-05-18 | 2016-11-24 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil |
DE102015108056A1 (de) | 2015-05-21 | 2016-11-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102015111558B4 (de) * | 2015-07-16 | 2023-02-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102015113310B4 (de) * | 2015-08-12 | 2022-08-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip |
JP6637703B2 (ja) * | 2015-09-10 | 2020-01-29 | アルパッド株式会社 | 半導体発光装置 |
DE102016211968A1 (de) * | 2016-06-30 | 2018-01-04 | Schweizer Electronic Ag | Elektronisches Bauteil und Verfahren zum Herstellen eines elektronischen Bauteils |
EP3591345B1 (de) * | 2018-07-02 | 2020-11-11 | Dr. Johannes Heidenhain GmbH | Verfahren zur herstellung einer lichtquelle für eine sensoreinheit einer positionsmesseinrichtung sowie eine positionsmesseinrichtung |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4055405B2 (ja) * | 2001-12-03 | 2008-03-05 | ソニー株式会社 | 電子部品及びその製造方法 |
TWI227570B (en) * | 2003-12-11 | 2005-02-01 | South Epitaxy Corp | Light-emitting diode packaging structure |
GB0426563D0 (en) * | 2004-12-03 | 2005-01-05 | Plastic Logic Ltd | Alignment tolerant patterning on flexible substrates |
EP1708283A1 (de) * | 2005-04-02 | 2006-10-04 | Lg Electronics Inc. | Lichtquellenvorrichtung und Verfahren zu ihrer Herstellung |
CN100446288C (zh) * | 2006-08-01 | 2008-12-24 | 金芃 | 通孔垂直结构的半导体芯片及其制造方法 |
DE102007011123A1 (de) * | 2007-03-07 | 2008-09-11 | Osram Opto Semiconductors Gmbh | Licht emittierendes Modul und Herstellungsverfahren für ein Licht emittierendes Modul |
DE102007022947B4 (de) | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
DE102007030129A1 (de) * | 2007-06-29 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement |
WO2009075753A2 (en) * | 2007-12-06 | 2009-06-18 | Paul Panaccione | Chip-scale packaged light-emitting devices |
DE102008019902A1 (de) | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement |
DE102009036621B4 (de) | 2009-08-07 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
FR2949278B1 (fr) * | 2009-08-18 | 2012-11-02 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif d'emission de lumiere a base de diodes electroluminescentes |
JP5261578B2 (ja) * | 2009-11-27 | 2013-08-14 | 京セラ株式会社 | 発光装置 |
JP2011181699A (ja) * | 2010-03-01 | 2011-09-15 | Seiko Instruments Inc | 発光デバイス |
DE102010034565A1 (de) * | 2010-08-17 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterbauelements |
DE102010045403A1 (de) | 2010-09-15 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE102010049961A1 (de) * | 2010-10-28 | 2012-05-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement mit einem Halbleiterchip, einem Trägersubstrat und einer Folie und ein Verfahren zu dessen Herstellung |
DE102011011139B4 (de) | 2011-02-14 | 2023-01-19 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterbauelements und optoelektronisches Halbleiterbauelement |
DE102011055549A1 (de) | 2011-09-30 | 2013-04-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements mit einer drahtlosen Kontaktierung |
-
2012
- 2012-08-31 DE DE102012215524.4A patent/DE102012215524A1/de not_active Withdrawn
-
2013
- 2013-08-28 DE DE112013004223.1T patent/DE112013004223B4/de active Active
- 2013-08-28 US US14/424,796 patent/US9209368B2/en active Active
- 2013-08-28 CN CN201380057054.5A patent/CN104737314B/zh active Active
- 2013-08-28 KR KR1020157007483A patent/KR101642867B1/ko active IP Right Grant
- 2013-08-28 JP JP2015529003A patent/JP6029760B2/ja not_active Expired - Fee Related
- 2013-08-28 WO PCT/EP2013/067812 patent/WO2014033166A1/de active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP6029760B2 (ja) | 2016-11-24 |
CN104737314B (zh) | 2017-05-17 |
CN104737314A (zh) | 2015-06-24 |
DE102012215524A1 (de) | 2014-03-06 |
WO2014033166A1 (de) | 2014-03-06 |
JP2015526909A (ja) | 2015-09-10 |
KR101642867B1 (ko) | 2016-07-26 |
KR20150046272A (ko) | 2015-04-29 |
DE112013004223B4 (de) | 2023-08-31 |
US20150243857A1 (en) | 2015-08-27 |
US9209368B2 (en) | 2015-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed | ||
R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: H01L0033620000 Ipc: H01L0033540000 |
|
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division |