JP6637703B2 - 半導体発光装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 203
- 239000000758 substrate Substances 0.000 claims description 108
- 239000004020 conductor Substances 0.000 claims description 22
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 description 43
- 239000002184 metal Substances 0.000 description 43
- 229910002601 GaN Inorganic materials 0.000 description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 239000010936 titanium Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000005253 cladding Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 229910016338 Bi—Sn Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910018100 Ni-Sn Inorganic materials 0.000 description 2
- 229910018532 Ni—Sn Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910020816 Sn Pb Inorganic materials 0.000 description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 description 2
- 229910020922 Sn-Pb Inorganic materials 0.000 description 2
- 229910020935 Sn-Sb Inorganic materials 0.000 description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 description 2
- 229910018956 Sn—In Inorganic materials 0.000 description 2
- 229910008783 Sn—Pb Inorganic materials 0.000 description 2
- 229910008757 Sn—Sb Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
図1は、第1実施形態に係る半導体発光装置1を示す断面図である。図2(a)は、半導体発光装置1を示す上面図である。図1は、図2(a)中に示すA−A線に沿った断面図である。また、図2(b)は、半導体発光装置1を示す等価回路である。
図8は、第2実施形態に係る半導体発光装置3を示す模式断面図である。半導体発光装置3は、基板10と、発光体20xと、発光体20yと、を備える。発光体20xおよび20yは、n形半導体層21、発光層23およびp形半導体層25をそれぞれ含む。
図9は、第3実施形態に係る半導体発光装置4を示す模式断面図である。半導体発光装置4は、基板110と、発光体120aと、発光体120bと、を備える。基板110は、導電性を有する。基板110は、シリコン基板である。発光体120aおよび120bは、基板110の上に設けられる。基板110の裏面側には、金属層115が設けられる。発光体120aおよび発光体120bは、例えば、窒化物半導体を含む。金属層115は、例えば、チタニウム(Ti)、白金(Pt)、金(Au)を含む。
図11は、第4実施形態に係る半導体発光装置6を示す模式断面図である。半導体発光装置6は、発光体220aと、発光体220bと、を備える。発光体220aおよび220bは、例えば、窒化物半導体を含む。
Claims (8)
- 導電性の基板と、
前記基板上に並設され、第1導電形の第1半導体層と、第2導電形の第2半導体層と、前記第1半導体層と前記第2半導体層との間に設けられた発光層と、をそれぞれ含む2以上の発光体であって、前記基板に電気的に接続された第1発光体と、前記第1発光体に直列接続された第2発光体と、を含む2以上の発光体と、
前記第1発光体と前記基板との間に設けられ、前記第1発光体の第1半導体層および前記基板に電気的に接続された第1電極と、
前記第2発光体と前記基板との間に設けられ、前記第2発光体の第1半導体層に電気的に接続された第2電極と、
前記第2発光体における第2半導体層の表面から前記第2発光体を貫き前記第2電極に連通するコンタクトホールを介して前記第1発光体の第2半導体層と前記第2電極とを電気的に接続する第1配線と、
を備えた半導体発光装置。 - 前記第2電極と前記基板との間に設けられた絶縁層をさらに備えた請求項1記載の半導体発光装置。
- 前記第1電極と前記基板との間、および、前記第2電極と前記基板との間に設けられた絶縁層と、
前記絶縁層を貫通し、前記第1電極に接続された導電体と、
をさらに備え、
前記第1発光体は、前記導電体を介して前記基板に電気的に接続される請求項1記載の半導体発光装置。 - 前記2以上の発光体は、前記第2発光体に直列接続された第3発光体と、
前記第3発光体と前記基板との間に設けられ、前記第3発光体の第1半導体層に電気的に接続された第3電極と、
前記第3発光体における第2半導体層の表面から前記第3発光体を貫き前記第3電極に連通するコンタクトホールを介して前記第2発光体の第2半導体層と前記第3電極とを電気的に接続する第2配線と、
をさらに備えた請求項1〜3のいずれか1つに記載の半導体発光装置。 - 前記2以上の発光体は、前記第1発光体と前記第1電極を共有する第4発光体と、前記第4発光体に直列接続された第5発光体と、をさらに含む請求項1〜4のいずれか1つに記載の半導体発光装置。
- 導電性の基板と、
前記基板上に並設され、第1導電形の第1半導体層と、第2導電形の第2半導体層と、前記第1半導体層と前記第2半導体層との間に設けられた発光層と、をそれぞれ含む2以上の発光体であって、前記基板に電気的に接続された第1発光体と、前記第1発光体に直列接続された第2発光体と、を含む2以上の発光体と、
前記第1発光体と前記基板との間に設けられ、前記第1発光体の第1半導体層に電気的に接続された第1電極と、
前記第1発光体における第2半導体層の表面から前記第1発光体を貫き前記第1電極に連通するコンタクトホールを介して前記第2発光体の第2半導体層と前記第1電極とを電気的に接続する配線と、
前記第1発光体において前記第1半導体層と発光層とを貫通し第2半導体層に至るリセス部中に設けられ、前記第1発光体の第2半導体層および前記基板に電気的に接続された第2電極と、
を備えた半導体発光装置。 - 導電性の基板と、
前記基板上に並設され、第1導電形の第1半導体層と、第2導電形の第2半導体層と、前記第1半導体層と前記第2半導体層との間に設けられた発光層と、をそれぞれ含む2以上の発光体であって、第1発光体と、前記第1発光体に直列接続された第2発光体と、を含む2以上の発光体と、
前記基板と前記第1発光体との間、および、前記基板と前記第2発光体との間に設けられた絶縁層と、
前記第1発光体の第1半導体層と、前記第2発光体の第2半導体層と、を電気的に接続する配線であって、その全体が前記絶縁層中に設けられた配線と、
を備え、
前記基板は、前記第1発光体の第2半導体層および前記第2発光体の第1半導体層のいずれか一方に電気的に接続された半導体発光装置。 - 導電性の基板と、
前記基板上に並設され、第1導電形の第1半導体層と、第2導電形の第2半導体層と、前記第1半導体層と前記第2半導体層との間に設けられた発光層と、をそれぞれ含む2以上の発光体であって、第1発光体と、前記第1発光体に直列接続された第2発光体と、を含む2以上の発光体と、
前記第1発光体と前記基板との間に設けられ、前記第1発光体の第1半導体層に電気的に接続された第1電極と、
前記第1発光体において、第1半導体層と発光層とを貫通し第2半導体層に至る第1リセス部を介して前記第1発光体の第2半導体層に電気的に接続された第2電極と、
前記第2発光体と前記基板との間に設けられ、前記第2発光体の第1半導体層に電気的に接続された第3電極と、
前記第2発光体において、第1半導体層と発光層とを貫通し第2半導体層に至る第2リセス部を介して前記第2発光体の第2半導体層に電気的に接続された第4電極であって、前記基板に電気的に接続された第4電極と、
前記第2電極と前記第3電極とを電気的に接続した配線と、
を備え、
前記第2電極は、前記第1発光体の前記第2半導体層に接する第1層と、前記第1リセス部内を埋め込んだ第2層と、を含み、
前記第4電極は、前記第2発光体の前記第2半導体層に接する第1層と、前記第2リセス部内を埋め込んだ第2層と、を含む半導体発光装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2015178165A JP6637703B2 (ja) | 2015-09-10 | 2015-09-10 | 半導体発光装置 |
US15/056,339 US9722162B2 (en) | 2015-09-10 | 2016-02-29 | Semiconductor light emitting device |
CN201610137827.6A CN106531758B (zh) | 2015-09-10 | 2016-03-10 | 半导体发光装置 |
TW106129390A TWI697140B (zh) | 2015-09-10 | 2016-03-10 | 半導體發光裝置 |
TW105107408A TWI612695B (zh) | 2015-09-10 | 2016-03-10 | 半導體發光裝置 |
CN201810687787.1A CN108807358B (zh) | 2015-09-10 | 2016-03-10 | 半导体发光装置 |
US15/636,218 US10134806B2 (en) | 2015-09-10 | 2017-06-28 | Semiconductor light emitting device |
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JP2015178165A JP6637703B2 (ja) | 2015-09-10 | 2015-09-10 | 半導体発光装置 |
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CN105702821B (zh) * | 2016-03-29 | 2018-01-30 | 苏州晶湛半导体有限公司 | 半导体发光器件及其制造方法 |
JP6380512B2 (ja) * | 2016-11-16 | 2018-08-29 | 富士ゼロックス株式会社 | 発光素子アレイ、および光伝送装置 |
TWI646377B (zh) * | 2017-11-03 | 2019-01-01 | 友達光電股份有限公司 | 顯示裝置及其製造方法 |
US10862006B2 (en) * | 2018-08-17 | 2020-12-08 | Seoul Viosys Co., Ltd. | Light emitting device |
CN110473975A (zh) * | 2019-07-29 | 2019-11-19 | 吉林大学 | 一种交流驱动的双微腔顶发射白光有机电致发光器件 |
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JP3303154B2 (ja) | 1994-09-30 | 2002-07-15 | ローム株式会社 | 半導体発光素子 |
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US20060017060A1 (en) * | 2004-07-26 | 2006-01-26 | Nai-Chuan Chen | Vertical conducting nitride diode using an electrically conductive substrate with a metal connection |
JP4995722B2 (ja) * | 2004-12-22 | 2012-08-08 | パナソニック株式会社 | 半導体発光装置、照明モジュール、および照明装置 |
KR101047683B1 (ko) * | 2005-05-17 | 2011-07-08 | 엘지이노텍 주식회사 | 와이어 본딩이 불필요한 발광소자 패키징 방법 |
CN101820043A (zh) * | 2006-01-09 | 2010-09-01 | 首尔Opto仪器股份有限公司 | 发光装置 |
JP5123269B2 (ja) * | 2008-09-30 | 2013-01-23 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法 |
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TWI552394B (zh) * | 2014-11-18 | 2016-10-01 | 隆達電子股份有限公司 | 發光二極體結構與發光二極體模組 |
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2015
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2016
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TWI697140B (zh) | 2020-06-21 |
JP2017054942A (ja) | 2017-03-16 |
TW201711232A (zh) | 2017-03-16 |
US9722162B2 (en) | 2017-08-01 |
US10134806B2 (en) | 2018-11-20 |
US20170077366A1 (en) | 2017-03-16 |
TWI612695B (zh) | 2018-01-21 |
CN106531758B (zh) | 2018-09-28 |
US20170301725A1 (en) | 2017-10-19 |
CN108807358A (zh) | 2018-11-13 |
CN108807358B (zh) | 2022-05-03 |
TW201743478A (zh) | 2017-12-16 |
CN106531758A (zh) | 2017-03-22 |
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