JP2017054942A5 - - Google Patents

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JP2017054942A5
JP2017054942A5 JP2015178165A JP2015178165A JP2017054942A5 JP 2017054942 A5 JP2017054942 A5 JP 2017054942A5 JP 2015178165 A JP2015178165 A JP 2015178165A JP 2015178165 A JP2015178165 A JP 2015178165A JP 2017054942 A5 JP2017054942 A5 JP 2017054942A5
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JP
Japan
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light emitter
side electrode
type semiconductor
semiconductor layer
electrically connected
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JP2015178165A
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JP2017054942A (ja
JP6637703B2 (ja
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Priority claimed from JP2015178165A external-priority patent/JP6637703B2/ja
Priority to JP2015178165A priority Critical patent/JP6637703B2/ja
Priority to US15/056,339 priority patent/US9722162B2/en
Priority to TW105107408A priority patent/TWI612695B/zh
Priority to CN201610137827.6A priority patent/CN106531758B/zh
Priority to CN201810687787.1A priority patent/CN108807358B/zh
Priority to TW106129390A priority patent/TWI697140B/zh
Publication of JP2017054942A publication Critical patent/JP2017054942A/ja
Priority to US15/636,218 priority patent/US10134806B2/en
Publication of JP2017054942A5 publication Critical patent/JP2017054942A5/ja
Publication of JP6637703B2 publication Critical patent/JP6637703B2/ja
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半導体発光装置１は、ｐ側コンタクト層２７、ｐ側電極３０ａおよびｐ側電極３０ｂをさらに備える。ｐ側コンタクト層２７は、発光体２０ａおよび２０ｂのｐ形半導体層２５にそれぞれ電気的に接続される。ｐ側電極３０ａおよび３０ｂは、ｐ形半導体層２５の表面上においてそれぞれｐ側コンタクト層２７を覆う。ｐ側電極３０ａは、ｐ側コンタクト層２７を介して発光体２０ａのｐ形半導体層２５に電気的に接続される。ｐ側電極３０ｂは、別のｐ側コンタクト層２７を介して発光体２０ｂのｐ形半導体層２５に電気的に接続される。
複数の発光体２０は、例えば、発光体２０に直列接続された第３発光体（以下、発光体２０ｃ）をさらに含む。基板１０と発光体２０ｃとの間には、ｐ側電極３０ｃが設けられる。そして、 発光体２０ｂのｎ形半導体層２１は、配線３５によりｐ側電極３０ｃに電気的に接続される。配線３５は、発光体２０ｃに設けられたコンタクトホール３１を介してｐ側電極３０ｃに接続される。
JP2015178165A 2015-09-10 2015-09-10 半導体発光装置 Active JP6637703B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015178165A JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置
US15/056,339 US9722162B2 (en) 2015-09-10 2016-02-29 Semiconductor light emitting device
CN201810687787.1A CN108807358B (zh) 2015-09-10 2016-03-10 半导体发光装置
CN201610137827.6A CN106531758B (zh) 2015-09-10 2016-03-10 半导体发光装置
TW105107408A TWI612695B (zh) 2015-09-10 2016-03-10 半導體發光裝置
TW106129390A TWI697140B (zh) 2015-09-10 2016-03-10 半導體發光裝置
US15/636,218 US10134806B2 (en) 2015-09-10 2017-06-28 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015178165A JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置

Publications (3)

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JP2017054942A JP2017054942A (ja) 2017-03-16
JP2017054942A5 true JP2017054942A5 (ja) 2018-10-18
JP6637703B2 JP6637703B2 (ja) 2020-01-29

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JP2015178165A Active JP6637703B2 (ja) 2015-09-10 2015-09-10 半導体発光装置

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US (2) US9722162B2 (ja)
JP (1) JP6637703B2 (ja)
CN (2) CN108807358B (ja)
TW (2) TWI697140B (ja)

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* Cited by examiner, † Cited by third party
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