JPWO2019197946A5 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JPWO2019197946A5
JPWO2019197946A5 JP2020512942A JP2020512942A JPWO2019197946A5 JP WO2019197946 A5 JPWO2019197946 A5 JP WO2019197946A5 JP 2020512942 A JP2020512942 A JP 2020512942A JP 2020512942 A JP2020512942 A JP 2020512942A JP WO2019197946 A5 JPWO2019197946 A5 JP WO2019197946A5
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semiconductor device
semiconductor
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JP2020512942A
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JP7240383B2 (ja
JPWO2019197946A1 (ja
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JP2020512942A 2018-04-12 2019-04-04 半導体装置 Active JP7240383B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023032991A JP2023063351A (ja) 2018-04-12 2023-03-03 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018076694 2018-04-12
JP2018076752 2018-04-12
JP2018076752 2018-04-12
JP2018076694 2018-04-12
PCT/IB2019/052744 WO2019197946A1 (ja) 2018-04-12 2019-04-04 半導体装置、および半導体装置の作製方法

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JP2023032991A Division JP2023063351A (ja) 2018-04-12 2023-03-03 半導体装置

Publications (3)

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JPWO2019197946A1 JPWO2019197946A1 (ja) 2021-04-22
JPWO2019197946A5 true JPWO2019197946A5 (ja) 2022-03-10
JP7240383B2 JP7240383B2 (ja) 2023-03-15

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JP2020512942A Active JP7240383B2 (ja) 2018-04-12 2019-04-04 半導体装置
JP2023032991A Pending JP2023063351A (ja) 2018-04-12 2023-03-03 半導体装置

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JP2023032991A Pending JP2023063351A (ja) 2018-04-12 2023-03-03 半導体装置

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US (3) US11355530B2 (ja)
JP (2) JP7240383B2 (ja)
WO (1) WO2019197946A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7161529B2 (ja) 2018-06-08 2022-10-26 株式会社半導体エネルギー研究所 半導体装置
WO2023126741A1 (ja) * 2021-12-29 2023-07-06 株式会社半導体エネルギー研究所 半導体装置、記憶装置、及び半導体装置の作製方法
WO2023166374A1 (ja) * 2022-03-04 2023-09-07 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
WO2023170511A1 (ja) * 2022-03-11 2023-09-14 株式会社半導体エネルギー研究所 半導体装置、記憶装置、及び電子機器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10361290B2 (en) 2014-03-14 2019-07-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film
JP6857447B2 (ja) 2015-01-26 2021-04-14 株式会社半導体エネルギー研究所 半導体装置
US10403646B2 (en) 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6674838B2 (ja) 2015-05-21 2020-04-01 株式会社半導体エネルギー研究所 電子装置
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
KR102513517B1 (ko) 2015-07-30 2023-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9773787B2 (en) * 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
US10868045B2 (en) 2015-12-11 2020-12-15 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
CN108886021B (zh) 2016-02-12 2023-07-25 株式会社半导体能源研究所 半导体装置及其制造方法
US10333004B2 (en) 2016-03-18 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module and electronic device
US10032918B2 (en) * 2016-04-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2017187301A1 (en) 2016-04-28 2017-11-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
US10910407B2 (en) 2017-01-30 2021-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2019186331A1 (ja) 2018-03-29 2019-10-03 株式会社半導体エネルギー研究所 半導体装置
JP2019201062A (ja) 2018-05-15 2019-11-21 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

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