JPWO2020084399A5 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JPWO2020084399A5
JPWO2020084399A5 JP2020552178A JP2020552178A JPWO2020084399A5 JP WO2020084399 A5 JPWO2020084399 A5 JP WO2020084399A5 JP 2020552178 A JP2020552178 A JP 2020552178A JP 2020552178 A JP2020552178 A JP 2020552178A JP WO2020084399 A5 JPWO2020084399 A5 JP WO2020084399A5
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semiconductor equipment
semiconductor
equipment
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JP2020552178A
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JPWO2020084399A1 (ja
JP7412346B2 (ja
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Priority claimed from PCT/IB2019/058800 external-priority patent/WO2020084399A1/ja
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JP2020552178A 2018-10-25 2019-10-16 半導体装置 Active JP7412346B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018201033 2018-10-25
JP2018201033 2018-10-25
PCT/IB2019/058800 WO2020084399A1 (ja) 2018-10-25 2019-10-16 単極性レベルシフト回路、および、半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020084399A1 JPWO2020084399A1 (ja) 2021-12-02
JPWO2020084399A5 true JPWO2020084399A5 (ja) 2022-09-27
JP7412346B2 JP7412346B2 (ja) 2024-01-12

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ID=70331307

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JP2020552178A Active JP7412346B2 (ja) 2018-10-25 2019-10-16 半導体装置

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US (1) US11296701B2 (ja)
JP (1) JP7412346B2 (ja)
KR (1) KR20210077716A (ja)
CN (1) CN112889138A (ja)
WO (1) WO2020084399A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113167821B (zh) * 2018-11-22 2024-04-19 株式会社半导体能源研究所 二次电池的异常检测装置以及半导体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124732A (en) 1998-07-15 2000-09-26 Lucent Technologies, Inc. Signaling voltage range discriminator
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8957721B2 (en) 2011-09-30 2015-02-17 Sharp Kabushiki Kaisha Level shift circuit
KR20130050795A (ko) * 2011-11-08 2013-05-16 에스케이하이닉스 주식회사 반도체 장치
JP5945629B2 (ja) 2013-04-18 2016-07-05 シャープ株式会社 レベルシフト回路

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