TWI843744B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI843744B
TWI843744B TW108128844A TW108128844A TWI843744B TW I843744 B TWI843744 B TW I843744B TW 108128844 A TW108128844 A TW 108128844A TW 108128844 A TW108128844 A TW 108128844A TW I843744 B TWI843744 B TW I843744B
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TW
Taiwan
Prior art keywords
semiconductor devices
semiconductor
devices
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Application number
TW108128844A
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English (en)
Other versions
TW202013618A (zh
Inventor
深沢正永
清水完
木村忠之
白岩利章
Original Assignee
日商索尼半導體解決方案公司
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Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202013618A publication Critical patent/TW202013618A/zh
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Publication of TWI843744B publication Critical patent/TWI843744B/zh

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TW108128844A 2018-08-31 2019-08-14 半導體裝置 TWI843744B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018163376 2018-08-31
JP2018-163376 2018-08-31

Publications (2)

Publication Number Publication Date
TW202013618A TW202013618A (zh) 2020-04-01
TWI843744B true TWI843744B (zh) 2024-06-01

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100163944A1 (en) 2008-12-26 2010-07-01 Kabushiki Kaisha Toshiba Semiconductor memory device and manufacturing method therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100163944A1 (en) 2008-12-26 2010-07-01 Kabushiki Kaisha Toshiba Semiconductor memory device and manufacturing method therefor

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