DE112018002741A5 - Strahlungsemittierendes bauelement - Google Patents

Strahlungsemittierendes bauelement Download PDF

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Publication number
DE112018002741A5
DE112018002741A5 DE112018002741.4T DE112018002741T DE112018002741A5 DE 112018002741 A5 DE112018002741 A5 DE 112018002741A5 DE 112018002741 T DE112018002741 T DE 112018002741T DE 112018002741 A5 DE112018002741 A5 DE 112018002741A5
Authority
DE
Germany
Prior art keywords
radiation
emitting component
emitting
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112018002741.4T
Other languages
English (en)
Inventor
Roland Zeisel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112018002741A5 publication Critical patent/DE112018002741A5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
DE112018002741.4T 2017-05-29 2018-05-28 Strahlungsemittierendes bauelement Withdrawn DE112018002741A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017111602.8A DE102017111602A1 (de) 2017-05-29 2017-05-29 Strahlungsemittierendes Bauelement
DE102017111602.8 2017-05-29
PCT/EP2018/063935 WO2018219868A1 (de) 2017-05-29 2018-05-28 Strahlungsemittierendes bauelement

Publications (1)

Publication Number Publication Date
DE112018002741A5 true DE112018002741A5 (de) 2020-02-20

Family

ID=62455480

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102017111602.8A Withdrawn DE102017111602A1 (de) 2017-05-29 2017-05-29 Strahlungsemittierendes Bauelement
DE112018002741.4T Withdrawn DE112018002741A5 (de) 2017-05-29 2018-05-28 Strahlungsemittierendes bauelement

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102017111602.8A Withdrawn DE102017111602A1 (de) 2017-05-29 2017-05-29 Strahlungsemittierendes Bauelement

Country Status (3)

Country Link
US (1) US11011573B2 (de)
DE (2) DE102017111602A1 (de)
WO (1) WO2018219868A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11322542B2 (en) * 2020-03-27 2022-05-03 Harvatek Corporation Light-emitting diode (LED) assembly and method of manufacturing an LED cell of the same
DE102022123582A1 (de) 2022-09-15 2024-03-21 Ams-Osram International Gmbh Optoelektronisches bauelement, verfahren zum betreiben eines optoelektronischen bauelements und verfahren zum herstellen eines optoelektronischen bauelements

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270753A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 半導体発光素子および表示装置
WO2011071559A1 (en) 2009-12-09 2011-06-16 Nano And Advanced Materials Institute Limited Method for manufacturing a monolithic led micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic led micro-display
CN110277420B (zh) * 2018-03-16 2021-11-02 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置

Also Published As

Publication number Publication date
DE102017111602A1 (de) 2018-11-29
US20200203421A1 (en) 2020-06-25
WO2018219868A1 (de) 2018-12-06
US11011573B2 (en) 2021-05-18

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee