DE112016001422A5 - Optoelektronischer Halbleiterchip - Google Patents

Optoelektronischer Halbleiterchip Download PDF

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Publication number
DE112016001422A5
DE112016001422A5 DE112016001422.8T DE112016001422T DE112016001422A5 DE 112016001422 A5 DE112016001422 A5 DE 112016001422A5 DE 112016001422 T DE112016001422 T DE 112016001422T DE 112016001422 A5 DE112016001422 A5 DE 112016001422A5
Authority
DE
Germany
Prior art keywords
semiconductor chip
optoelectronic semiconductor
optoelectronic
chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112016001422.8T
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English (en)
Other versions
DE112016001422A8 (de
DE112016001422B4 (de
Inventor
Asako Hirai
Tobias Meyer
Philipp Drechsel
Peter Stauss
Anna Nirschl
Alvaro Gomez-Iglesias
Tobias Niebling
Bastian Galler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112016001422A5 publication Critical patent/DE112016001422A5/de
Publication of DE112016001422A8 publication Critical patent/DE112016001422A8/de
Application granted granted Critical
Publication of DE112016001422B4 publication Critical patent/DE112016001422B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
DE112016001422.8T 2015-03-27 2016-03-29 Optoelektronischer Halbleiterchip Active DE112016001422B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015104700.4A DE102015104700A1 (de) 2015-03-27 2015-03-27 Optoelektronischer Halbleiterchip
DE102015104700.4 2015-03-27
PCT/EP2016/056794 WO2016156312A1 (de) 2015-03-27 2016-03-29 Optoelektronischer halbleiterchip

Publications (3)

Publication Number Publication Date
DE112016001422A5 true DE112016001422A5 (de) 2018-01-04
DE112016001422A8 DE112016001422A8 (de) 2018-04-12
DE112016001422B4 DE112016001422B4 (de) 2021-05-12

Family

ID=55629047

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102015104700.4A Withdrawn DE102015104700A1 (de) 2015-03-27 2015-03-27 Optoelektronischer Halbleiterchip
DE112016001422.8T Active DE112016001422B4 (de) 2015-03-27 2016-03-29 Optoelektronischer Halbleiterchip

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102015104700.4A Withdrawn DE102015104700A1 (de) 2015-03-27 2015-03-27 Optoelektronischer Halbleiterchip

Country Status (3)

Country Link
US (2) US10164134B2 (de)
DE (2) DE102015104700A1 (de)
WO (1) WO2016156312A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016208717B4 (de) * 2016-05-20 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit erhöhter Effizienz und Verfahren zur Herstellung eines Bauelements
KR102555005B1 (ko) * 2016-11-24 2023-07-14 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자의 제조 방법
DE102018133123A1 (de) * 2018-12-20 2020-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit einem zentralen Bereich und einem Randbereich und Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
DE102019217229A1 (de) 2019-11-07 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer halbleiterchip und herstellungsverfahren für optoelektronische halbleiterchips

Family Cites Families (23)

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JP2815769B2 (ja) * 1992-12-15 1998-10-27 三菱電機株式会社 半導体レーザの製造方法
US6608330B1 (en) * 1998-09-21 2003-08-19 Nichia Corporation Light emitting device
US6285698B1 (en) * 1998-09-25 2001-09-04 Xerox Corporation MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer
US6838705B1 (en) * 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
JP2002151734A (ja) * 2000-09-04 2002-05-24 Sharp Corp 発光ダイオード
JP4595198B2 (ja) * 2000-12-15 2010-12-08 ソニー株式会社 半導体発光素子及び半導体発光素子の製造方法
US7446345B2 (en) 2005-04-29 2008-11-04 Cree, Inc. Light emitting devices with active layers that extend into opened pits
US7535031B2 (en) 2005-09-13 2009-05-19 Philips Lumiled Lighting, Co. Llc Semiconductor light emitting device with lateral current injection in the light emitting region
JP5050574B2 (ja) 2007-03-05 2012-10-17 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
KR101530876B1 (ko) * 2008-09-16 2015-06-23 삼성전자 주식회사 발광량이 증가된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
KR20100093872A (ko) 2009-02-17 2010-08-26 삼성엘이디 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP2010232597A (ja) * 2009-03-30 2010-10-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP5758293B2 (ja) * 2009-06-24 2015-08-05 日亜化学工業株式会社 窒化物半導体発光ダイオード
US8525221B2 (en) 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
JP6005346B2 (ja) 2011-08-12 2016-10-12 シャープ株式会社 窒化物半導体発光素子およびその製造方法
DE102011112706B4 (de) 2011-09-07 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
JP5162016B1 (ja) * 2011-09-15 2013-03-13 株式会社東芝 半導体素子、ウェーハ、半導体素子の製造方法及びウェーハの製造方法
JP5881393B2 (ja) * 2011-12-06 2016-03-09 国立大学法人山口大学 窒化物半導体発光素子およびその製造方法
DE102012217640B4 (de) * 2012-09-27 2020-02-20 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
US20140225059A1 (en) * 2013-02-08 2014-08-14 Bridgelux, Inc. LED with Improved Injection Efficiency
KR102142709B1 (ko) * 2013-12-05 2020-08-07 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 장치
KR102335105B1 (ko) * 2014-11-14 2021-12-06 삼성전자 주식회사 발광 소자 및 그의 제조 방법

Also Published As

Publication number Publication date
US10164134B2 (en) 2018-12-25
US20190109246A1 (en) 2019-04-11
WO2016156312A9 (de) 2016-12-15
DE112016001422A8 (de) 2018-04-12
US10522699B2 (en) 2019-12-31
DE112016001422B4 (de) 2021-05-12
WO2016156312A1 (de) 2016-10-06
DE102015104700A1 (de) 2016-09-29
US20180062031A1 (en) 2018-03-01

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