CN103840037B - 发光二极管制造方法 - Google Patents

发光二极管制造方法 Download PDF

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CN103840037B
CN103840037B CN201210474650.0A CN201210474650A CN103840037B CN 103840037 B CN103840037 B CN 103840037B CN 201210474650 A CN201210474650 A CN 201210474650A CN 103840037 B CN103840037 B CN 103840037B
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CN103840037A (zh
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邱镜学
林雅雯
凃博闵
黄世晟
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Yun Chuan intellectual property Services Co., Ltd of Zhongshan city
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

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  • Engineering & Computer Science (AREA)
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Abstract

一种发光二极管的制造方法，包括以下的步骤：提供一个蓝宝石基板，蓝宝石基板的表面形成有多个凸出部；在蓝宝石基板的表面成长未掺杂GaN层，所述未掺杂GaN层覆盖凸出部的顶部区域；在未掺杂GaN层表面自组织成长多个岛状半导体区域，所述岛状半导体区域之间形成有间隙以暴露出未掺杂GaN层的部分表面；在暴露的未掺杂GaN层的表面成长n型GaN层，所述n型GaN层覆盖所述多个岛状半导体区域；在n型GaN层表面成长活性层；以及在活性层表面成长p型GaN层。在上述方法中，通过在未掺杂GaN层表面自组织成长多个岛状半导体区域，所述多个岛状半导体区域覆盖在缺陷聚集的区域并防止缺陷向上延伸从而降低晶体缺陷。

Description

发光二极管制造方法
技术领域
本发明涉及一种发光二极管的制造方法，尤其涉及一种可有效降低晶体缺陷的发光二极管制造方法。
背景技术
发光二极管(Light Emitting Diode，LED)是一种可将电流转换成特定波长范围的光电半导体元件。发光二极管以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点，从而可作为光源而广泛应用于照明领域。
在LED的磊晶生长过程中，如何降低LED晶粒的晶体缺陷是人们需要考虑的问题。一种制备低缺陷的LED晶粒的方法是采用图案化的蓝宝石基板。即，在蓝宝石基板上形成多个凸出部，所述多个凸出部可使到后续磊晶过程中半导体层形成侧向生长，从而降低LED晶粒的晶体缺陷。然而，在上述过程中，缺陷容易集中在凸出部顶部的磊晶层中，从而对后续的磊晶层的成长造成影响。
发明内容
有鉴于此，有必要提供一种可有效降低晶体缺陷的发光二极管的制造方法。
一种发光二极管的制造方法，包括以下的步骤：
提供一个蓝宝石基板，蓝宝石基板的表面形成有多个凸出部；
在蓝宝石基板的表面成长未掺杂GaN层，所述未掺杂GaN层覆盖凸出部的顶部区域；
在未掺杂GaN层表面自组织成长多个岛状半导体区域，所述岛状半导体区域之间形成有间隙以暴露出未掺杂GaN层的部分表面；
在暴露的未掺杂GaN层的表面成长n型GaN层，所述n型GaN层覆盖所述多个岛状半导体区域；
在n型GaN层表面成长活性层；以及
在活性层表面成长p型GaN层。
在上述发光二极管的制造方法中，通过在未掺杂GaN层表面自组织成长多个岛状半导体区域，由于自组织成长的岛状半导体区域容易在缺陷聚集的地方开始成长，所述多个岛状半导体区域将会覆盖未掺杂GaN层的缺陷聚集区域的表面上，在后续成长n型GaN层、活性层以及p型GaN层的过程中，由于岛状半导体区域对缺陷的阻挡作用，位于未掺杂GaN层中的缺陷将不会向上延伸，从而降低后续成长n型GaN层、活性层以及p型GaN层的缺陷。
附图说明
图1是本发明实施例所提供的发光二极管的制造方法的第一个步骤。
图2是本发明实施例所提供的发光二极管的制造方法的第二个步骤。
图3是本发明实施例所提供的发光二极管的制造方法的第三个步骤。
图4是本发明实施例所提供的发光二极管的制造方法的第四个步骤。
图5是本发明实施例所提供的发光二极管的制造方法的第五个步骤。
主要元件符号说明
蓝宝石基板 110
凸出部 111
未掺杂GaN层 120
岛状半导体区域 130
间隙 131
n型GaN层 140
活性层 150
p型GaN层 160
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
以下参照图示，对本发明的发光二极管制造方法进行进一步的说明。
请参见图1，首先提供一个蓝宝石基板110。所述蓝宝石基板110的表面具有多个凸出部111。在本实施例中，所述凸出部111的横截面为半圆形状。根据需要，所述凸出部111的横截面也可以是三角形形状，梯形形状或其他多边形形状。
请参见图2，在蓝宝石基板110的表面成长未掺杂GaN层120，所述未掺杂GaN层120成长至覆盖所述凸出部111的顶部区域。
请参见图3，在未掺杂GaN层120表面自组织成长多个岛状半导体区域130，所述岛状半导体区域130之间形成有间隙131以暴露出未掺杂GaN层120的部分表面。在本实施例中，所述多个岛状半导体区域130由SiNx材料制成。在自组织成长多个岛状半导体区域130的时候，可在未掺杂GaN层120表面通入SiH4气体以及NH3气体，SiH4气体与NH3气体发生反应而在未掺杂GaN层120的表面形成由SiNx材料组成的岛状区域。根据需要，所述岛状半导体区域130的高度H的范围为50nm到300nm。优选地，所述岛状半导体区域130的高度H为100nm。根据需要，所述岛状半导体区域130的宽度W小于50nm。优选地，所述岛状半导体区域130的宽度W为10nm。
请参见图4，在暴露的未掺杂GaN层120的表面成长n型GaN层140。所述n型GaN层140从岛状半导体区域130之间的间隙131开始成长直至覆盖岛状半导体区域130。
请参见图5，在n型GaN层140的表面依次成长活性层150以及p型GaN层160。根据需要，所述活性层150为多量子阱层。
在上述发光二极管的制造方法中，通过在未掺杂GaN层120表面自组织成长多个岛状半导体区域130。由于自组织成长的岛状半导体区域130容易在缺陷聚集的地方开始成长，因此，所述多个岛状半导体区域130将会覆盖未掺杂GaN层120的缺陷聚集区域的表面上，在后续成长n型GaN层140、活性层150以及p型GaN层160的过程中，由于岛状半导体区域130对缺陷的阻挡作用，位于未掺杂GaN层120中的缺陷将不会向上延伸，从而降后续成长的n型GaN层140、活性层150以及p型GaN层160的缺陷。另外，由于岛状半导体区域130的存在，在成长n型GaN层140的时候，所述n型GaN层140首先从岛状半导体区域130之间的间隙131开始生长，然后再侧向生长至覆盖岛状半导体区域130。所述侧向生长的过程同样可减少后续成长的n型GaN层140、活性层150以及p型GaN层160的晶体缺陷。
根据需要，所述岛状半导体区域130的材料并不限于SiNx材料，其也可以是MgNx材料。此时，在自组织成长多个岛状半导体区域130的时候，可在未掺杂GaN层120表面通入Cp2Mg气体以及NH3气体，Cp2Mg气体与NH3气体发生反应而在未掺杂GaN层120的表面形成由MgNx材料组成的岛状区域。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (8)

1.一种发光二极管的制造方法，包括以下的步骤：
提供一个蓝宝石基板，蓝宝石基板的表面形成有多个凸出部；
在蓝宝石基板的表面成长未掺杂GaN层，所述未掺杂GaN层覆盖凸出部的顶部区域；
在未掺杂GaN层表面自组织成长多个岛状半导体区域，所述岛状半导体区域之间形成有间隙以暴露出未掺杂GaN层的部分表面，所述自组织成长的多个岛状半导体区域由SiNx或MgNx材料制成；
在暴露的未掺杂GaN层的表面成长n型GaN层，使得所述n型GaN层先从所述岛状半导体区域之间的间隙开始生长，而后再侧向生长至覆盖所述多个岛状半导体区域；
在n型GaN层表面成长活性层；以及
在活性层表面成长p型GaN层。
2.如权利要求1所述的发光二极管的制造方法，其特征在于，在自组织成长多个岛状半导体区域的过程中，在未掺杂GaN层的表面通入SiH4气体以及NH3气体，SiH4气体与NH3气体发生反应而在未掺杂GaN层的表面形成由SiNx材料组成的岛状区域。
3.如权利要求1所述的发光二极管的制造方法，其特征在于，在自组织成长多个岛状半导体区域的过程中，在未掺杂GaN层的表面通入Cp2Mg气体以及NH3气体，Cp2Mg气体与NH3气体发生反应而在未掺杂GaN层的表面形成由MgNx材料组成的岛状区域。
4.如权利要求1至3任意一项所述的发光二极管的制造方法，其特征在于，所述岛状半导体区域的高度范围为50nm到300nm之间。
5.如权利要求4所述的发光二极管的制造方法，其特征在于，所述岛状半导体区域的高度100nm之间。
6.如权利要求1至3任意一项所述的发光二极管的制造方法，其特征在于，所述岛状半导体区域的宽度小于50nm。
7.如权利要求6所述的发光二极管的制造方法，其特征在于，所述岛状半导体区域的宽度小于10nm。
8.如权利要求1所述的发光二极管的制造方法，其特征在于，所述活性层为多量子阱层。
CN201210474650.0A 2012-11-21 2012-11-21 发光二极管制造方法 Expired - Fee Related CN103840037B (zh)

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CN1607641A (zh) * 1997-10-20 2005-04-20 卢米洛格股份有限公司 氮化镓外延层的制造方法
CN101939820A (zh) * 2008-02-15 2011-01-05 三菱化学株式会社 外延生长用基板、GaN类半导体膜的制造方法、GaN类半导体膜、GaN类半导体发光元件的制造方法以及GaN类半导体发光元件

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Publication number Priority date Publication date Assignee Title
CN1607641A (zh) * 1997-10-20 2005-04-20 卢米洛格股份有限公司 氮化镓外延层的制造方法
CN101939820A (zh) * 2008-02-15 2011-01-05 三菱化学株式会社 外延生长用基板、GaN类半导体膜的制造方法、GaN类半导体膜、GaN类半导体发光元件的制造方法以及GaN类半导体发光元件

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