CN1607641A - 氮化镓外延层的制造方法 - Google Patents
氮化镓外延层的制造方法 Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 142
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 137
- 238000000034 method Methods 0.000 title claims abstract description 71
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- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims description 22
- 229910052594 sapphire Inorganic materials 0.000 claims description 18
- 239000010980 sapphire Substances 0.000 claims description 18
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 229910010093 LiAlO Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 24
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
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- 238000011066 ex-situ storage Methods 0.000 abstract 1
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 15
- 229910052733 gallium Inorganic materials 0.000 description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 12
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- 238000000927 vapour-phase epitaxy Methods 0.000 description 5
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- 239000001257 hydrogen Substances 0.000 description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
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- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
本发明涉及一种氮化镓(GaN)外延层的制造方法,其特征在于该方法包括在衬底表面上形成SixNy型介电薄膜;在足以抑制氮化镓小岛形成的温度下,在该介电薄膜上沉积连续的氮化镓层;在足以促进氮化镓小岛形成的温度下,退火该氮化镓层;在氮化镓小岛形成之后,进行氮化镓的外延生长。本发明还涉及能够采用该方法得到的氮化镓层。
Description
本发明涉及一种氮化镓(GaN)外延层的制造方法,以及采用所述方法能够得到的氮化镓(GaN)外延层。这样一种方法能够得到质量极佳的氮化镓层。
本发明还涉及安装这样一层氮化镓外延层的短波长光学器件或高功率、高频电子器件。
本发明特别涉及用这样的氮化镓层制造的光电元件。
人们了解用于获得较厚例如100-200微米GaN层的方法。常用方法是采用氯化物和氢化物的汽相外延(HVPE)法。该方法使用蓝宝石基体,或者采用有机金属化合物热解汽相外延方法(EPVOM)制造的厚度200微米的处在蓝宝石上的GaN层。然而,蓝宝石与GaN之间的晶格参数存在差异,使得这些层中应力积累导致产生裂纹,并妨碍除去蓝宝石基体。任何的试验改进(生长开始时用GaCl处理蓝宝石表面,沉积中间层ZnO)都没有能够解决这个问题。实际上,相对厚的GaN层的双X衍射线(DDX)宽度至多约为300arcsec,这意味着结晶学质量没有超过用EPVOM法或用分子束外延(EJM)法制造的层的结晶学质量。
换句话说,对于氮化物外延生长法而言,蓝宝石、ZnO、6H-SiC、LiAlO2均不属于理想的基体(晶格与热膨胀系数差异过大,热不稳定性)。
长久以来,人们还知道激光(通过光泵激)对GaN产生的效应。尽管以III-V氮化物为基的激光二极管已制造出来,但是构成这些激光器结构的氮化物层晶体质量非常一般。测定出位错密度为109-1010厘米-2。
事实上,与上述较厚GaN外延层制造过程相关的缺陷明显地延缓了有这样一些外延层的激光二极管的发展,这些缺陷包括:高残留n,无合适的单晶和基体,无法实现P掺杂。
D.Kalponek等人在《晶体生长杂志》,170(1997)340-343中提到,在屏蔽内生成的开口中定位生长氮化物,以便生成棱锥体结构。不过该文件即没有描述也没有暗示通过花样即小岛聚结而生成光滑氮化镓层的过程。
Y.Kato,S.Kitamura,K.Hiramatsu,N.Sawaki在《晶体生长杂志》,144,133(1994)中描述了采用EPVOM法在蓝宝石基体上选择性生长氮化镓,在其蓝宝石基体上已沉积一薄层氮化镓,而该氮化镓层用蚀刻的SiO2层屏蔽,以清除氮化镓连续层。
但是,如下面将要描述的,这样进行的定位外延既不能进行侧向生长,也不能各向异性生长,。
EP 0 506 146描述了一种起作屏蔽作用的定位侧向生长方法,该方法采用平板印刷成形,以便定位生长。这些光滑层实例均未涉及氮化镓。这些实例提到在GaAs基体上GaAs均相外延,在InP基体上InP均相外延。
本发明方法的目的是获得能够制造其性能和寿命超过前面所得到的光电器件(具体是激光二极管)的晶体层。
本发明人已发现,通过沉积适当的电介质,接着沉积氮化镓,再进行退火处理一种基体,可导致生成几乎无缺陷的氮化镓小岛。
通过热处理将这样一些生成的小岛聚结起来可得到质量极佳的氮化镓层。
本发明首先涉及氮化镓(GaN)层的制造方法,其特征在于该方法包括在基体上沉积一层作为屏蔽使用的电介质,在通过外延沉积的条件下,用氮化镓修复屏蔽的基体,以便诱导氮化镓花样沉积和所述花样侧向各向异性生长,侧向生长直到不同花样聚结为止。还可以使用术语小岛代替花样。
基体厚度一般是几百微米(具体地约200),基体可以选自蓝宝石、ZnO、6H-SiC、LiAlO2、LiGaO2、MgAl2O4。该基体优选地预先进行氮化处理。
电介质优选地是SixNy类型,具体是Si3N4。还可列举SiO2,但是其他的熟知电介质也能够使用。用硅烷和氨在氮化镓生长室中沉积电介质。
优选地,载气是N2与H2的混合物。
根据第一种实施方式,电介质层是单原子层,其中具有一原子平面数量级表面层。
然后,通过EPVOM外延修复基体。规则花样即小岛成长。高分辨率的电子显微镜研究表明,在规则的花样即小岛中,GaN位错密度(因此被认为没有异质外延应力)大大低于通过在基体上直接沉积氮化镓所产生的位错密度。于是,在电介质表面上按照方向[10-10]侧向进行的,因此与蓝宝石基体不存在外延关系的这种GaN生长比通常方法可得到好得多的GaN晶体质量。在得到所述花样之后,还可以采用EPVOM法或者HVPE法继续生长。侧向生长直到小岛聚结为止。由小岛聚结而成的这些表面呈现优于蓝宝石上异质外延层的结晶质量。
一般分两步沉积氮化镓。第一步在温度约600℃沉积将产生GaN花样的缓冲层,然后在更高的温度(约1000-1100℃)下由所述花样生长表层。
根据第二种实施方式,本发明涉及一种方法,其特征在于蚀刻电介质层,以便确定开口并露出对照基体区域,并将已屏蔽与蚀刻的基体置于通过外延沉积氮化镓的条件下,以便诱导氮化镓花样沉积在对照区域上并且使所述花样侧向和各向异性生长,这种侧向生长则继续进行直到不同花样聚结为止。
根据第三种实施方式,本发明涉及氮化镓(GaN)外延层的制造方法,该方法包括在基体上沉积一薄层氮化镓,其特征在于:
在所述氮化镓薄层上沉积一层电介质层,
蚀刻该电介质层,以便确定开口,并露出所述氮化镓薄层区域,而该区域是对照的,
将已外延、屏蔽与蚀刻的基体置于通过外延沉积氮化镓的条件下,以便诱导氮化镓花样沉积在对照区域上并使所述花样的侧向各向异性生长,侧向生长继续进行直到不同花样聚结为止。
本发明方法的显著特征在于,通过将定向外延、生长的各向异性与侧向生长结合的方法,本发明的方法能够限制因GaN与基体之间参数不一致所产生的缺陷密度,这样便可以削弱外延应力。
本发明的方法使用本领域技术人员熟知的沉积与蚀刻技术。
按照第二种实施方式,在生长室中进行电介质沉积,其厚度为几纳米。然后,采用光刻法,确定电介质层中的开口,于是露出基体表面的微米区域。
采用EPVOM法修复已屏蔽并蚀刻的基体。
该基体厚度一般为几百微米(具体地,约200微米),该基体可以选自蓝宝石、ZnO、6H-SiC、LiAlO2、LiGaO2、MgAl2O4。
电介质优选地是SiXNY,具体地是Si3N4。还可列举SiO2,但也可使用其他熟知的电介质。在氮化镓生长室中,采用硅烷和氨立即在上述基体上沉积电介质。
根据第三种实施方式,首先采用EPVOM法在基体上使氮化镓进行外延。然后,在生长室中进行电介质沉积,其厚度为几纳米。其次,采用光刻法,确定电介质层中的开口,于是露出微米区域的氮化镓表面。
采用EPVOM修复已外延、屏蔽并蚀刻的基体。
该基体厚度一般几百微米(具体地,约200微米),该基体可以选自蓝宝石、ZnO、6H-SiC、LiAlO2、LiGaO2、MgAl2O4。
电介质优选地是SiXNY,具体地是Si3N4。还可列举SiO2,但也可使用其他熟知的电介质。在沉积氮化镓之后立刻在氮化镓生长室中采用硅烷和氨沉积电介质。
具体地采用光刻法进行电介质蚀刻。
确定氮化硅层中点状或呈带状开口,于是在微米花样上露出氮化镓表面。优选地,这些开口是规则的多边形,尤其是六边形。有利地,点状开口内切半径小于10微米的圆,而带状开口的宽度小于10微米,带的长度只受基体尺寸的限制。
开口之间的间隔是规则的,应该能够使氮化镓定位外延,然后侧向各向异性生长。
一般地,与基体总表面积相比,清除的基体或氮化镓表面积的比例是5-80%,优选地是5-50%。
已发现,镓原子没有沉积在电介质上,换句话说,这种电介质蚀刻表面能使镓原子浓缩在这些开口上。
然后,采用EPVOM法通过外延修复基体。该基体规则花样即小岛成长。高分辨率的电子显微镜研究表明,在规则的花样即小岛中GaN位错密度在无异质外延应力时增加,在第三种具体实施方案的情况下大大低于在第一层GaN中存在的位错密度。于是,在电介质表面上按照方向[10-10]侧向生长的GaN,因此与蓝宝石基体不存在外延关系,这种GaN生长比通常方法所达到的GaN晶体质量要好得多。在得到规则的花样网之后,还可以采用EPVOM法,或者采用HVPE法继续进行这种生长。进行侧向生长一直到小岛聚结为止。这些由小岛聚结而成的表面的结晶质量优于蓝宝石上的异质外延层。
因此,该方法新颖之处在于应用生长的各向异性以诱导侧向生长直到聚结为止,因此在无应力的条件下得到连续的GaN层。使用具有较低缺陷密度的通过定位外延得到的氮化镓花样即小岛进行侧向生长。
根据一种具体实施方案,使用未掺杂的氮化镓进行外延修复。
根据另外一种具体实施方案,使用掺杂剂掺杂的氮化镓进行外延修复,掺杂剂选自镁、锌、镉、铍、钙、碳,尤其是镁。事实上,使用掺杂剂,具体是镁掺杂氮化镓,会改变GaN生长方式,与按照方向[0001]生长速度相比,这种掺杂还会导致沿方向<10-11>生长速度增加。优选地,掺杂剂/Ga摩尔比高于0,而小于或等于1,有利地小于0.2。
根据另外一种有利的具体实施方案,分两个阶段进行外延修复。
第一阶段,在垂直生长的各向异性条件下,使用未掺杂的氮化镓在已蚀刻的或厚度为埃数量级的电介质上进行沉积,然后在掺杂剂存在下,继续沉积氮化镓,以利于可导致花样聚结的侧向生长。
本发明还涉及氮化镓外延层,其特征在于这些层可采用上述方法得到。有利地,这些层的缺陷密度低于在现有技术中达到的密度,具体地低于约109厘米-2。
优选地,外延层的厚度是1-1000微米,视具体情况而定,该外延层在分离基体后是自承载的。
本发明尤其适用于装有前述氮化镓外延层的激光二极管的制造过程中。
现在描述几种与附图1-8和实施例相关的本发明方法的实施方式。
图1是本发明氮化镓层的横剖面示意图。
图2是一张照片,显示出当电介质中的开口是点状时,由非掺杂氮化镓定位外延时生成的规则棱锥体花样。
图3是由氮化镓定位的截头六角棱锥体在垂直于[11-20]方向上的剖面图。
图4表明WT、WB和H(微米)值随生长时间(分钟)的变化。WT、WB和H如图3所定义。
图5表明沿方向[0001]和<10-11>,TMGA摩尔流的标准化生长速度随汽相中Mg/Ga摩尔比的变化。
图6是通过用镁掺杂GaN定位外延修复所得到的观测棱锥体照片。图6表明掺杂剂镁对GaN生长方式的有利影响,在于它能够使花样以明显地更快速度聚结,导致生成连续的氮化镓层,而没有与外延相关的应力。
图7是在实施例5的生长过程中所得到的棱锥体的透射电子显微镜照片。
图8是在实施例5的生长过程中所得到的棱锥体的扫描电子显微镜照片。
实施例1:未掺杂氮化镓层的沉积
使用一种适合在大气压力下操作的垂直反应器,该反应器用于有机金属化合物热解汽相外延。在厚度200微米蓝宝石(0001)1基体上,在1080℃通过有机金属化合物热解汽相外延沉积一薄层氮化镓2,其厚度为2微米。镓源是三甲基镓(TMGa),氮源是氨。在许多文献中都描述过这样的方法。
试验条件如下:
载气是H2和N2等比例混合物(4sl/mn)。氨是用分开的管道加入(2sl/mn)。
在第一个氮化镓表层生长之后,通过分别以流量50sccm和2slm使用SiH4与NH3沉积一层很薄的氮化硅薄膜层3作为屏蔽层,以便后面选择性生长氮化硅。
用透射电子显微镜对横剖面进行观察表明,得到的屏蔽层构成了连续的无定形层,其厚度约2纳米。由于未测定这种薄膜的化学计量,该说明书后面将使用术语SiN。不过,似乎是其化学计量对应于术语Si3N4。尽管该SiN层极薄,但是该层显示出是一层具有极好选择性的屏蔽层。这时,采用光刻法进行蚀刻,与进行反应性离子侵蚀,以便清除由直径10微米圆外切的六角形开口4。在屏蔽层中,两个相邻开口中心之间的距离是15微米。使用在与氮化镓标准生长所使用的相同条件下(除TMGa流量外)蚀刻的试样,为沉积氮化镓而在露出的氮化镓区域5进行外延修复。TMGa流量固定在一个较低的值(典型地,对于采用非掺杂氮化镓进行的试验而言为16微摩尔/分),为的是避免由于在区域5非常有效地收集可碰到屏蔽层表面的镓原子造成的高生长速度。定位外延显示了在[0001]方向上氮化镓6的生长速度Vc实际上与两个开口之间的间隔成比例。
此外,甚至对于很大的间隔,在SiN上也未观察到任何成核现象。因此,由此可得出GaN的成核与生长选择性地在开口5进行。因此,屏蔽的表面起着将这些原子引向开口的浓缩器的作用。
或者就地采用激光反射仪,或者然后采用扫描电子显微镜(MEB)以俯视或剖视测定生长速度。
图2是MEB照片,该照片显示了棱锥体的变化。
图3是氮化镓定位截头六边棱锥体的与[11-20]方向垂直的剖面图,WT、WH和H是时间t的函数,θR是限定这些平面的(0001)与(10-11)之间的角度。WB0是屏蔽层SiN中开口的宽度。
图4表明WT、WB和H值(微米)随生长时间(分钟)的变化。通过试验点的线性回归分析,可得到下述结果:
VR=2.1微米/小时(沿方向[10-11]侧向速度),
VC=13微米/小时(沿方向[0001]速度),
WBO=7.6微米,
θR=62.1°。
当Wt=0-t0(圆锥体顶的宽度为零)时,高度H随由式VR/cos(θR)给出的较低速度而改变。
应注意到,使用同样组成的蒸汽相时,与在基体上标准外延(0001)测定的速度1微米/小时相比,VC是极高的。因此,VR/VC比仅为约0.15。
实施例2:在气相中添加镁时氮化镓层的沉积
重复实施例1的试验,只是加入2.8微摩尔/分汽相(MeCp)2Mg。使用条件是:生长时间30分钟,生长温度1080℃,TMGa 16微摩尔/分,N2、H2和NH3各为2sl/分。
图6表明,镁的存在增加了VR/VC比,明显地超过了cos(θR)界限,因此顶部平面(0001)增宽。
(MeCp)2Mg的存在不会对生长的选择性产生不利影响,但是有利地改变生长的各向异性。
实施例3:Mg/Ga摩尔比的影响
图5表明,在[0001]和[10-11]方向,在TMGA摩尔流中标准化生长速度随汽相中Mg/Ga摩尔比的变化。
实际上,选择保持(MeCp)2Mg物流恒定,并改变TMGA的量。这样能够保证,在生长小岛表面上Mg的浓度对于任何试样来说都是相同的。
由于通过提供的镓量可线性地控制生长,所以为比较起见,使其生长速度标准化。
当Mg/Ga摩尔比从0变化到0.17时,VNC从0.8微米/小时/微摩尔快速降低到0.1微米/小时/微摩尔,而VNR从0.16微米/小时/微摩尔增加到0.4微米/小时/微摩尔。虚线是通过外推得到的VR/VC比曲线。右侧纵坐标是VR/VC。
该曲线表明,加入Mg因改变了生长的各向异性而能够很容易地控制棱锥体的结构。由此认为,Mg起着表面活性剂的作用,因此有利于在面{10 11}上吸附镓,但是,相反地,阻止在面(0001)上吸附镓。
实施例4:分两次沉积氮化镓层
首先,在与实施例1相似的操作条件下,通过外延修复实施本发明的方法。
在适当的反应器中在如蓝宝石之类的结晶基体上以外延方式预先沉积的GaN层上沉积SiN屏蔽层。然后,在屏蔽层中开线性口,其宽度为5微米,间隔为5微米,以便清除下层区域。线性开口有利地沿GaN的[10-10]方向取向,不过该实施例所述方法的具体实施方案也能够进行具体地沿GaN的[10-20]线性开口的其他取向。
在这样的操作条件下,即GaN花样按方向[0001]的生长速度充分地超过所述花样在斜侧面上按正交方向的生长速度,采用非有意掺杂的GaN进行在已清除区域上的外延修复。在这样一些条件下,生长的各向异性导致面(0001)消失。当GaN花样面(0001)确已消失时,终止实施本发明方法的第一个阶段。在第一个阶段结束后,GaN花样为带状,其截面是三角形。但是,可继续进行第一个阶段直到GaN花样聚结为止,以便完全覆盖屏蔽层。在这种情况下,已聚结的GaN花样截面是折线。
第二个阶段是在第一实施阶段产生的GaN花样上,用掺杂的GaN,具体地用实施例2或3的镁外延修复。在加入掺杂剂的作用下,生长的各向异性有利于GaN花样的平面化(planarisation)。在第一阶段得到的每个GaN花样顶部再次出现面C。在第二阶段,随着面C增大以及与此相反地侧表面减少,掺杂的GaN花样成长。该实施例方法的第二阶段在侧面消失时结束,由掺杂GaN聚结花样生成的沉积上表面这时是平的。
如上所述,分两阶段实施本发明方法,一方面得到平的GaN层,因此该层可用作用于器件结构,具体地激光二极管结构通过外延修复实现最终沉积的GaN基体,但是,另一方面导致所述基体晶体质量获得非常有利的改善。事实上,下面GaN层的晶体缺陷线通过屏蔽层中开口在第一阶段产生的未掺杂的GaN花样中垂直地蔓延。但是在沉积掺杂GaN花样的第二阶段期间,这些缺陷线弯曲。由此得出缺陷线沿与屏蔽的GaN层表面平行的方向蔓延。
由于缺陷蔓延方向改变,由GaN花样聚结而成的上表面,在与如GaN激光二极管之类电子器件尺寸相容的范围内,几乎没有出现缺陷。
实施例5:直接在用电介质屏蔽的基体上沉积氮化镓层
在这个实施例中,说明通过处理达到在基体上自生氮化镓花样即小岛的方法,该处理方法是用电介质薄膜,具体地用厚度数量级为埃的氮化硅覆盖基体。该方法能够有利地避免通过采用如光刻法与化学侵蚀之类的复杂技术现场外蚀刻屏蔽层。
使用适用于通过有机金属化合物热解汽相外延的外延生长反应器。确切地,将通过在3∶1的H2SO4∶H3PO4酸溶液中除油和酸洗以化学方法预先准备的基体,具体是蓝宝石基体(0001),升温到约1050-1080℃,以使基体与NH3流接触约10分钟而被氮化。在这个氮化步骤之后,在基体表面上生成非常薄的氮化硅薄膜,该薄膜是在温度1080℃下通过NH3与硅烷SiH4反应得到的,其反应时间足够短,以便将薄膜厚度限制在原子平面的厚度。
操作条件如下:
载气是等比例氮与氢混合物(4sl/分)。加入氨的流量为2sl/分,而在氢中稀释到50ppm的硅烷加入流量为50scc/分。在这些条件下,NH3与SiH4反应典型时间是约30秒。
采用激光反射仪(LR)和透射电子显微镜(TEM)监测后续步骤。
在生成电介质层之后,在电介质薄膜上沉积连续的厚度为20-30纳米的氮化镓层。GaN层的沉积在约600℃的低温下进行。
在GaN层沉积之后,在约1080℃高温下进行GaN层退火。在温度升高以及在载气中有足够量氢气和在GaN层下有非常薄的电介质薄膜存在的共同作用下,所述GaN层的形态受到因质量转移导致的固相重结晶造成的深刻变化。当温度接近1060℃时,可看到缓冲层的反射率突然降低。起始连续的缓冲层这时转化成由氮化镓小岛生成的不连续层。
在这种自生就地重结晶过程之后,得到结晶质量非常好的GaN花样即小岛,同时由于电介质层厚度非常小,所以还保持了与该基体的外延关系。通过使区域或电介层裸露,可将GaN花样或小岛彼此分开。小岛的特征高度是约2400埃。透射电子显微镜的观察结果表明这些小岛趋于呈截头的棱锥体(图7)。
图8是一种试样的扫描电子显微图片,该试样是在为使小岛尺寸增加而改变的操作条件下得到的,其尺寸增加到可与采用光刻法在现场外制成的屏蔽层开口(参见实施例1)中得到的小岛即花样的微米值相同为止。
当在试样表面上用氮化镓进行后续外延修复时,电介质层被裸露的电介质区域作为图1屏蔽层起作用,于是自生的GaN花样即小岛与在该屏蔽层(参见图1)现场外制成的开口(参见图1)中定位的GaN花样(参见图1或图2)相似。确切地,GaN花样即小岛因侧向垂直生长而扩展。
于是,通过GaN花样聚结得到GaN层,GaN花样的缺陷密度为约108厘米-2,比在根据通常方法制造的氮化镓层中的缺陷密度小两个数量级。
因此,在上述实施例所述方法的具体实施方案中,尤其是实施例4描述的分两个阶段的具体实施方案,可以有利地避免使用现场外在屏蔽层中蚀刻开口的方法,该方法可以用前述就地自生GaN小岛即花样代替,控制它们的几何形状和分散已不再是达到改善用这种方法生成的GaN层质量的前提条件。
Claims (10)
1、氮化镓外延层的制造方法,包括:
在衬底表面上形成SixNy型介电薄膜;
在足以抑制氮化镓小岛形成的温度下,在该介电薄膜上沉积连续的氮化镓层;
在足以促进氮化镓小岛形成的温度下,退火该氮化镓层;
在氮化镓小岛形成之后,进行氮化镓的外延生长。
2、根据权利要求1的氮化镓外延层的制造方法,其中沉积连续的氮化镓层的温度是600℃。
3、根据权利要求1的氮化镓外延层的制造方法,其中退火该氮化镓层的温度是1080℃。
4、根据权利要求1的氮化镓外延层的制造方法,其中衬底选自蓝宝石,ZnO,6H-SiC和LiAlO2。
5、根据权利要求1的氮化镓外延层的制造方法,其中该介电薄膜的形成包括使铵与硅烷反应。
6、根据权利要求1的氮化镓外延层的制造方法,其中该介电薄膜的厚度为一原子平面。
7、根据权利要求1的氮化镓外延层的制造方法,其中连续的氮化镓层的厚度为20-30nm。
8、根据权利要求1的氮化镓外延层的制造方法,还包括在形成介电薄膜之前,对衬底表面进行氮化。
9、通过权利要求1的方法得到的氮化镓外延层。
10、光电元件,其具有根据权利要求9的氮化镓外延层。
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1997
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1998
- 1998-10-15 PT PT03005910T patent/PT1338683E/pt unknown
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- 1998-10-15 CN CNB200410068332XA patent/CN1329954C/zh not_active Expired - Lifetime
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- 1998-10-15 EP EP03005910A patent/EP1338683B1/fr not_active Expired - Lifetime
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Cited By (6)
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CN101452976B (zh) * | 2007-12-06 | 2011-03-30 | 泰谷光电科技股份有限公司 | 高亮度发光二极管结构 |
CN102160145A (zh) * | 2008-09-19 | 2011-08-17 | 台湾积体电路制造股份有限公司 | 通过外延层过成长的元件形成 |
CN102160145B (zh) * | 2008-09-19 | 2013-08-21 | 台湾积体电路制造股份有限公司 | 通过外延层过成长的元件形成 |
CN103237929A (zh) * | 2010-11-23 | 2013-08-07 | Soitec公司 | 用于形成iii族氮化物材料的方法以及通过该方法形成的结构 |
CN103840037A (zh) * | 2012-11-21 | 2014-06-04 | 展晶科技(深圳)有限公司 | 发光二极管制造方法 |
CN103840037B (zh) * | 2012-11-21 | 2017-04-12 | 中山市云创知识产权服务有限公司 | 发光二极管制造方法 |
Also Published As
Publication number | Publication date |
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EP1034325A1 (en) | 2000-09-13 |
HK1075131A1 (en) | 2005-12-02 |
ATE500358T1 (de) | 2011-03-15 |
FR2769924A1 (fr) | 1999-04-23 |
KR100626625B1 (ko) | 2006-09-22 |
ATE303462T1 (de) | 2005-09-15 |
CN1267587C (zh) | 2006-08-02 |
JP4282896B2 (ja) | 2009-06-24 |
EP1338683B1 (fr) | 2011-03-02 |
ES2369467T3 (es) | 2011-12-01 |
US6325850B1 (en) | 2001-12-04 |
DE69831419D1 (de) | 2005-10-06 |
PT1338683E (pt) | 2011-07-04 |
AU9632498A (en) | 1999-05-10 |
JP2001520169A (ja) | 2001-10-30 |
KR20010031225A (ko) | 2001-04-16 |
EP1034325B9 (fr) | 2006-01-04 |
EP1338683A3 (fr) | 2008-05-28 |
US6802902B2 (en) | 2004-10-12 |
CN1279733A (zh) | 2001-01-10 |
DE69831419T2 (de) | 2006-06-08 |
EP1034325B1 (fr) | 2005-08-31 |
US20020152952A1 (en) | 2002-10-24 |
FR2769924B1 (fr) | 2000-03-10 |
CN1329954C (zh) | 2007-08-01 |
WO1999020816A1 (fr) | 1999-04-29 |
DE69842158D1 (de) | 2011-04-14 |
SG103342A1 (en) | 2004-04-29 |
EP1338683A2 (fr) | 2003-08-27 |
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