FR2840452B1 - Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat - Google Patents

Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat

Info

Publication number
FR2840452B1
FR2840452B1 FR0206486A FR0206486A FR2840452B1 FR 2840452 B1 FR2840452 B1 FR 2840452B1 FR 0206486 A FR0206486 A FR 0206486A FR 0206486 A FR0206486 A FR 0206486A FR 2840452 B1 FR2840452 B1 FR 2840452B1
Authority
FR
France
Prior art keywords
epitaxic
substrate
production
nitride film
gallium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0206486A
Other languages
English (en)
Other versions
FR2840452A1 (fr
Inventor
Hacene Lahreche
Gilles Nataf
Bernard Beaumont
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Lumilog SAS
Original Assignee
Lumilog SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0206486A priority Critical patent/FR2840452B1/fr
Application filed by Lumilog SA filed Critical Lumilog SA
Priority to AU2003255613A priority patent/AU2003255613A1/en
Priority to JP2004508396A priority patent/JP2005527978A/ja
Priority to US10/516,358 priority patent/US7488385B2/en
Priority to EP03755219A priority patent/EP1514297A2/fr
Priority to PCT/FR2003/001615 priority patent/WO2003100839A2/fr
Publication of FR2840452A1 publication Critical patent/FR2840452A1/fr
Application granted granted Critical
Publication of FR2840452B1 publication Critical patent/FR2840452B1/fr
Priority to JP2010130134A priority patent/JP2010251776A/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76248—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using lateral overgrowth techniques, i.e. ELO techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
FR0206486A 2002-05-28 2002-05-28 Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat Expired - Fee Related FR2840452B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0206486A FR2840452B1 (fr) 2002-05-28 2002-05-28 Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat
JP2004508396A JP2005527978A (ja) 2002-05-28 2003-05-28 基板から分離された窒化ガリウムの膜をエピタキシーにより製造する方法
US10/516,358 US7488385B2 (en) 2002-05-28 2003-05-28 Method for epitaxial growth of a gallium nitride film separated from its substrate
EP03755219A EP1514297A2 (fr) 2002-05-28 2003-05-28 Procede de realisation par epitaxie d un film de nitrure de gallium separe de son substrat
AU2003255613A AU2003255613A1 (en) 2002-05-28 2003-05-28 Method for epitaxial growth of a gallium nitride film separated from its substrate
PCT/FR2003/001615 WO2003100839A2 (fr) 2002-05-28 2003-05-28 Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat
JP2010130134A JP2010251776A (ja) 2002-05-28 2010-06-07 基板から分離された窒化ガリウムの膜をエピタキシーにより製造する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0206486A FR2840452B1 (fr) 2002-05-28 2002-05-28 Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat

Publications (2)

Publication Number Publication Date
FR2840452A1 FR2840452A1 (fr) 2003-12-05
FR2840452B1 true FR2840452B1 (fr) 2005-10-14

Family

ID=29558766

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0206486A Expired - Fee Related FR2840452B1 (fr) 2002-05-28 2002-05-28 Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat

Country Status (6)

Country Link
US (1) US7488385B2 (fr)
EP (1) EP1514297A2 (fr)
JP (2) JP2005527978A (fr)
AU (1) AU2003255613A1 (fr)
FR (1) FR2840452B1 (fr)
WO (1) WO2003100839A2 (fr)

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JP4359770B2 (ja) * 2003-12-26 2009-11-04 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造ロット
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Also Published As

Publication number Publication date
EP1514297A2 (fr) 2005-03-16
WO2003100839A2 (fr) 2003-12-04
WO2003100839A3 (fr) 2004-04-08
AU2003255613A1 (en) 2003-12-12
AU2003255613A8 (en) 2003-12-12
US20050217565A1 (en) 2005-10-06
FR2840452A1 (fr) 2003-12-05
JP2005527978A (ja) 2005-09-15
JP2010251776A (ja) 2010-11-04
US7488385B2 (en) 2009-02-10

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