FR2787919B1 - Procede de realisation d'un substrat destine a faire croitre un compose nitrure - Google Patents
Procede de realisation d'un substrat destine a faire croitre un compose nitrureInfo
- Publication number
- FR2787919B1 FR2787919B1 FR9816359A FR9816359A FR2787919B1 FR 2787919 B1 FR2787919 B1 FR 2787919B1 FR 9816359 A FR9816359 A FR 9816359A FR 9816359 A FR9816359 A FR 9816359A FR 2787919 B1 FR2787919 B1 FR 2787919B1
- Authority
- FR
- France
- Prior art keywords
- growing
- producing
- substrate
- nitride compound
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9816359A FR2787919B1 (fr) | 1998-12-23 | 1998-12-23 | Procede de realisation d'un substrat destine a faire croitre un compose nitrure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9816359A FR2787919B1 (fr) | 1998-12-23 | 1998-12-23 | Procede de realisation d'un substrat destine a faire croitre un compose nitrure |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2787919A1 FR2787919A1 (fr) | 2000-06-30 |
FR2787919B1 true FR2787919B1 (fr) | 2001-03-09 |
Family
ID=9534428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9816359A Expired - Fee Related FR2787919B1 (fr) | 1998-12-23 | 1998-12-23 | Procede de realisation d'un substrat destine a faire croitre un compose nitrure |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2787919B1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19959182A1 (de) * | 1999-12-08 | 2001-06-28 | Max Planck Gesellschaft | Verfahren zum Herstellen eines optoelektronischen Bauelements |
FR2840730B1 (fr) * | 2002-06-11 | 2005-05-27 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees |
US8507361B2 (en) | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
FR2840731B3 (fr) * | 2002-06-11 | 2004-07-30 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees |
FR2894990B1 (fr) | 2005-12-21 | 2008-02-22 | Soitec Silicon On Insulator | Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede |
FR2817395B1 (fr) | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
US7407869B2 (en) | 2000-11-27 | 2008-08-05 | S.O.I.Tec Silicon On Insulator Technologies | Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material |
FR2817394B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
ATE504082T1 (de) | 2003-05-27 | 2011-04-15 | Soitec Silicon On Insulator | Verfahren zur herstellung einer heteroepitaktischen mikrostruktur |
FR2855650B1 (fr) | 2003-05-30 | 2006-03-03 | Soitec Silicon On Insulator | Substrats pour systemes contraints et procede de croissance cristalline sur un tel substrat |
FR2863405B1 (fr) * | 2003-12-08 | 2006-02-03 | Commissariat Energie Atomique | Collage moleculaire de composants microelectroniques sur un film polymere |
TW200802544A (en) | 2006-04-25 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Composite substrate and method for making the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2754734B2 (ja) * | 1989-06-06 | 1998-05-20 | 旭硝子株式会社 | 複合半導体基板 |
JPH10275905A (ja) * | 1997-03-31 | 1998-10-13 | Mitsubishi Electric Corp | シリコンウェーハの製造方法およびシリコンウェーハ |
-
1998
- 1998-12-23 FR FR9816359A patent/FR2787919B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2787919A1 (fr) | 2000-06-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |
Effective date: 20060831 |