DE69939267D1 - Verfahren zur herstellung einer sputtertarget/trägerplattenanordnung - Google Patents

Verfahren zur herstellung einer sputtertarget/trägerplattenanordnung

Info

Publication number
DE69939267D1
DE69939267D1 DE69939267T DE69939267T DE69939267D1 DE 69939267 D1 DE69939267 D1 DE 69939267D1 DE 69939267 T DE69939267 T DE 69939267T DE 69939267 T DE69939267 T DE 69939267T DE 69939267 D1 DE69939267 D1 DE 69939267D1
Authority
DE
Germany
Prior art keywords
carrier
producing
plate assembly
sputter
carrier plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69939267T
Other languages
English (en)
Inventor
Thomas J Hunt
Paul S Gilman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Praxair ST Technology Inc
Praxair Technology Inc
Original Assignee
Praxair ST Technology Inc
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair ST Technology Inc, Praxair Technology Inc filed Critical Praxair ST Technology Inc
Application granted granted Critical
Publication of DE69939267D1 publication Critical patent/DE69939267D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
DE69939267T 1998-10-14 1999-09-28 Verfahren zur herstellung einer sputtertarget/trägerplattenanordnung Expired - Lifetime DE69939267D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/172,311 US6073830A (en) 1995-04-21 1998-10-14 Sputter target/backing plate assembly and method of making same
PCT/US1999/022369 WO2000022185A1 (en) 1998-10-14 1999-09-28 Sputter target/backing plate assembly and method of making same

Publications (1)

Publication Number Publication Date
DE69939267D1 true DE69939267D1 (de) 2008-09-18

Family

ID=22627173

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69939267T Expired - Lifetime DE69939267D1 (de) 1998-10-14 1999-09-28 Verfahren zur herstellung einer sputtertarget/trägerplattenanordnung

Country Status (7)

Country Link
US (1) US6073830A (de)
EP (1) EP1125000B1 (de)
JP (1) JP2002527618A (de)
KR (1) KR100602767B1 (de)
AU (1) AU6501099A (de)
DE (1) DE69939267D1 (de)
WO (1) WO2000022185A1 (de)

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JPH11335821A (ja) * 1998-05-20 1999-12-07 Japan Energy Corp 磁性薄膜形成用Ｎｉ−Ｆｅ合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ｎｉ−Ｆｅ合金スパッタリングターゲットの製造方法
US20050178818A1 (en) * 1998-12-25 2005-08-18 Kiyokazu Kobayashi Method of joining steel members, method of processing joined surface of steel member and reinforcing member
JP2002534604A (ja) * 1998-12-29 2002-10-15 トーソー エスエムディー，インク． 拡散接合スパッターターゲットアセンブリとそれを製造する方法
US6164519A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of bonding a sputtering target to a backing plate
WO2001034339A1 (en) * 1999-11-09 2001-05-17 Tosoh Smd, Inc. Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin
US6774339B1 (en) 1999-11-09 2004-08-10 Tosoh Smd, Inc. Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin
US6780794B2 (en) * 2000-01-20 2004-08-24 Honeywell International Inc. Methods of bonding physical vapor deposition target materials to backing plate materials
US6698647B1 (en) 2000-03-10 2004-03-02 Honeywell International Inc. Aluminum-comprising target/backing plate structures
US6619537B1 (en) * 2000-06-12 2003-09-16 Tosoh Smd, Inc. Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers
US7718117B2 (en) * 2000-09-07 2010-05-18 Kabushiki Kaisha Toshiba Tungsten sputtering target and method of manufacturing the target
JP3905301B2 (ja) * 2000-10-31 2007-04-18 日鉱金属株式会社 タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法
AT4240U1 (de) * 2000-11-20 2001-04-25 Plansee Ag Verfahren zur herstellung einer verdampfungsquelle
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DE60136098D1 (de) * 2000-12-18 2008-11-20 Tosoh Smd Inc Niedrigtemperaturverfahren zur sputtertarget/grundungen
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WO2002088417A1 (en) * 2001-04-26 2002-11-07 Honeywell International Inc. Assemblies comprising molybdenum and aluminum; and methods of utilizing interlayers in forming target/backing plate assemblies
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US6599405B2 (en) * 2001-05-30 2003-07-29 Praxair S.T. Technology, Inc. Recessed sputter target
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CN100415929C (zh) * 2003-01-22 2008-09-03 佳能株式会社 烧结体和用它的成膜方法
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US7431195B2 (en) * 2003-09-26 2008-10-07 Praxair S.T. Technology, Inc. Method for centering a sputter target onto a backing plate and the assembly thereof
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AT8697U1 (de) * 2005-10-14 2006-11-15 Plansee Se Rohrtarget
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US7815782B2 (en) * 2006-06-23 2010-10-19 Applied Materials, Inc. PVD target
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EP2518179B1 (de) 2009-12-24 2016-11-16 JX Nippon Mining & Metals Corporation Gadolinium-sputtertarget und verfahren zur herstellung des targets
US8992747B2 (en) * 2010-03-12 2015-03-31 Applied Materials, Inc. Apparatus and method for improved darkspace gap design in RF sputtering chamber
CN103492608B (zh) 2011-02-14 2016-04-13 东曹Smd有限公司 经扩散结合的溅射靶组件及制造方法
DE102011085143A1 (de) * 2011-10-25 2013-04-25 Mtu Aero Engines Gmbh K3-Beschichtungsverfahren zur Bildung gut haftender und rissfester Beschichtungen sowie entsprechend beschichtendes Bauteil
CN103692041A (zh) * 2012-09-28 2014-04-02 宁波江丰电子材料有限公司 一种硅靶材组件的钎焊方法
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US9534286B2 (en) * 2013-03-15 2017-01-03 Applied Materials, Inc. PVD target for self-centering process shield
US10792788B2 (en) * 2013-10-22 2020-10-06 Tosoh Smd, Inc. Optimized textured surfaces and methods of optimizing
CN103894720B (zh) * 2014-04-16 2016-10-05 昆山海普电子材料有限公司 一种高纯钴靶材坯料与背板的焊接方法
WO2015194861A1 (ko) * 2014-06-17 2015-12-23 한국에너지기술연구원 박판 접합방법 및 박판 어셈블리
AT14497U1 (de) 2015-01-26 2015-12-15 Plansee Composite Mat Gmbh Beschichtungsquelle
CN108367537B (zh) * 2015-07-13 2021-05-07 雅宝公司 将固态锂低压冷结合至金属基材的方法
JP6277309B2 (ja) 2016-07-13 2018-02-07 住友化学株式会社 スパッタリングターゲットの製造方法およびスパッタリングターゲット
JP6271798B2 (ja) 2016-07-13 2018-01-31 住友化学株式会社 スパッタリングターゲットの製造方法
CN107745177A (zh) * 2017-11-01 2018-03-02 宁波江丰电子材料股份有限公司 钛靶热等静压焊接方法及制备的靶材
CN111203606A (zh) * 2020-03-18 2020-05-29 宁波江丰电子材料股份有限公司 一种金属靶材真空磁控溅射镀镍及焊接方法
CN112091401B (zh) * 2020-09-11 2022-04-12 宁波江丰电子材料股份有限公司 一种钛铝合金靶材及其焊接的方法
CN112091400A (zh) * 2020-09-14 2020-12-18 浙江最成半导体科技有限公司 一种靶材和背板的接合方法
CN112846651B (zh) * 2020-12-25 2022-10-28 宁波江丰电子材料股份有限公司 一种钛靶材与铝背板的装配方法
US20220356560A1 (en) * 2021-05-07 2022-11-10 Taiwan Semiconductor Manufacturing Company Limited Physical vapor deposition (pvd) system and method of processing target
CN113857792A (zh) * 2021-10-28 2021-12-31 宁波江丰电子材料股份有限公司 一种三角形焊接型靶材组件及其制备方法
CN115302206B (zh) * 2022-08-26 2024-03-22 宁波江丰电子材料股份有限公司 一种内嵌水道的薄壁件制作方法及薄壁件
CN117570114B (zh) * 2024-01-15 2024-05-03 中国机械总院集团宁波智能机床研究院有限公司 一种巴氏合金轴承的成形方法及装置、巴氏合金轴承

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Also Published As

Publication number Publication date
EP1125000A4 (de) 2002-06-26
US6073830A (en) 2000-06-13
EP1125000A1 (de) 2001-08-22
KR20010075630A (ko) 2001-08-09
KR100602767B1 (ko) 2006-07-20
AU6501099A (en) 2000-05-01
JP2002527618A (ja) 2002-08-27
EP1125000B1 (de) 2008-08-06
WO2000022185A1 (en) 2000-04-20

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