DE69719403D1 - Verfahren zur Herstellung einer Verbindungshalbleiterschicht - Google Patents

Verfahren zur Herstellung einer Verbindungshalbleiterschicht

Info

Publication number
DE69719403D1
DE69719403D1 DE69719403T DE69719403T DE69719403D1 DE 69719403 D1 DE69719403 D1 DE 69719403D1 DE 69719403 T DE69719403 T DE 69719403T DE 69719403 T DE69719403 T DE 69719403T DE 69719403 D1 DE69719403 D1 DE 69719403D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor layer
compound semiconductor
compound
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69719403T
Other languages
English (en)
Other versions
DE69719403T2 (de
Inventor
Timothy David Bestwick
Stewart Edward Hooper
Geoffrey Duggan
Tin Sun Cheng
Charles Thomas Bayley Foxon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Nottingham
Sharp Corp
Original Assignee
University of Nottingham
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Nottingham, Sharp Corp filed Critical University of Nottingham
Application granted granted Critical
Publication of DE69719403D1 publication Critical patent/DE69719403D1/de
Publication of DE69719403T2 publication Critical patent/DE69719403T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
DE69719403T 1996-06-01 1997-06-02 Verfahren zur Herstellung einer Verbindungshalbleiterschicht Expired - Lifetime DE69719403T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9611471A GB2313606A (en) 1996-06-01 1996-06-01 Forming a compound semiconductor film

Publications (2)

Publication Number Publication Date
DE69719403D1 true DE69719403D1 (de) 2003-04-10
DE69719403T2 DE69719403T2 (de) 2004-01-15

Family

ID=10794620

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69719403T Expired - Lifetime DE69719403T2 (de) 1996-06-01 1997-06-02 Verfahren zur Herstellung einer Verbindungshalbleiterschicht

Country Status (5)

Country Link
US (1) US6001173A (de)
EP (1) EP0810307B1 (de)
JP (1) JP3385180B2 (de)
DE (1) DE69719403T2 (de)
GB (1) GB2313606A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2332563A (en) * 1997-12-18 1999-06-23 Sharp Kk Growth of group III nitride or group III-V nitride layers
KR100304664B1 (ko) * 1999-02-05 2001-09-26 윤종용 ＧａＮ막 제조 방법
KR100381742B1 (ko) * 1999-06-30 2003-04-26 스미토모덴키고교가부시키가이샤 Ⅲ-ⅴ족 질화물반도체의 성장방법 및 기상성장장치
US6576932B2 (en) 2001-03-01 2003-06-10 Lumileds Lighting, U.S., Llc Increasing the brightness of III-nitride light emitting devices
FR2860101B1 (fr) * 2003-09-22 2005-10-21 Commissariat Energie Atomique Protection de la surface du sic par une couche de gan
JP4908453B2 (ja) 2008-04-25 2012-04-04 住友電気工業株式会社 窒化物半導体レーザを作製する方法
CA2653581A1 (en) 2009-02-11 2010-08-11 Kenneth Scott Alexander Butcher Migration and plasma enhanced chemical vapour deposition
JP5023267B2 (ja) * 2009-03-30 2012-09-12 株式会社アルバック Ｉｉｉ族窒化物薄膜の形成方法
US8143147B1 (en) 2011-02-10 2012-03-27 Intermolecular, Inc. Methods and systems for forming thin films
CN112166488A (zh) * 2018-05-25 2021-01-01 密歇根大学董事会 通过金属-半导体辅助外延提高超宽带隙半导体的掺杂效率
US11101378B2 (en) * 2019-04-09 2021-08-24 Raytheon Company Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3915765A (en) * 1973-06-25 1975-10-28 Bell Telephone Labor Inc MBE technique for fabricating semiconductor devices having low series resistance
US4517047A (en) * 1981-01-23 1985-05-14 The United States Of America As Represented By The Secretary Of The Army MBE growth technique for matching superlattices grown on GaAs substrates
EP0250603B1 (de) * 1985-12-09 1994-07-06 Nippon Telegraph and Telephone Corporation Verfahren zur bildung einer dünnschicht mit halbleitermaterial
FI81926C (fi) * 1987-09-29 1990-12-10 Nokia Oy Ab Foerfarande foer uppbyggning av gaas-filmer pao si- och gaas-substrater.
US5015353A (en) * 1987-09-30 1991-05-14 The United States Of America As Represented By The Secretary Of The Navy Method for producing substoichiometric silicon nitride of preselected proportions
JPH01204411A (ja) * 1988-02-09 1989-08-17 Nec Corp 半導体装置の製造方法
FR2632452B1 (fr) * 1988-06-03 1990-08-17 Labo Electronique Physique Procede de realisation de couches epitaxiales
DE69024246T2 (de) * 1989-03-31 1996-05-30 Toshiba Kawasaki Kk Verfahren zur Herstellung einer Dünnschichthalbleiterlegierung
US5091335A (en) * 1990-03-30 1992-02-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration MBE growth technology for high quality strained III-V layers
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
EP0525297A3 (en) * 1991-05-08 1993-10-06 Fujitsu Limited Method of growing doped crystal
US5336324A (en) * 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
CN1032702C (zh) * 1993-12-04 1996-09-04 北京长城钛金技术联合开发公司 镀有金色渐变交替层的部件及其制备方法
US5637146A (en) * 1995-03-30 1997-06-10 Saturn Cosmos Co., Ltd. Method for the growth of nitride based semiconductors and its apparatus

Also Published As

Publication number Publication date
DE69719403T2 (de) 2004-01-15
US6001173A (en) 1999-12-14
GB2313606A (en) 1997-12-03
EP0810307B1 (de) 2003-03-05
GB9611471D0 (en) 1996-08-07
JP3385180B2 (ja) 2003-03-10
EP0810307A3 (de) 1998-10-28
JPH10199812A (ja) 1998-07-31
EP0810307A2 (de) 1997-12-03

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