DE69840399D1 - Verfahren zur Herstellung einer Gate-Elektrode - Google Patents
Verfahren zur Herstellung einer Gate-ElektrodeInfo
- Publication number
- DE69840399D1 DE69840399D1 DE69840399T DE69840399T DE69840399D1 DE 69840399 D1 DE69840399 D1 DE 69840399D1 DE 69840399 T DE69840399 T DE 69840399T DE 69840399 T DE69840399 T DE 69840399T DE 69840399 D1 DE69840399 D1 DE 69840399D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- gate electrode
- gate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6155797P | 1997-10-07 | 1997-10-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69840399D1 true DE69840399D1 (de) | 2009-02-12 |
Family
ID=22036537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69840399T Expired - Lifetime DE69840399D1 (de) | 1997-10-07 | 1998-10-07 | Verfahren zur Herstellung einer Gate-Elektrode |
Country Status (4)
Country | Link |
---|---|
US (1) | US6187656B1 (de) |
EP (1) | EP0908934B1 (de) |
JP (1) | JPH11233451A (de) |
DE (1) | DE69840399D1 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6429120B1 (en) | 2000-01-18 | 2002-08-06 | Micron Technology, Inc. | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
US6432803B1 (en) * | 1998-12-14 | 2002-08-13 | Matsushita Electric Industrial Co., Inc. | Semiconductor device and method of fabricating the same |
JP2001102580A (ja) * | 1999-09-30 | 2001-04-13 | Nec Corp | 半導体装置及びその製造方法 |
KR100500924B1 (ko) * | 1999-12-30 | 2005-07-14 | 주식회사 하이닉스반도체 | 메모리소자의 텅스텐 전극 형성방법 |
US6376370B1 (en) * | 2000-01-18 | 2002-04-23 | Micron Technology, Inc. | Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy |
US7262130B1 (en) * | 2000-01-18 | 2007-08-28 | Micron Technology, Inc. | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals |
US6420262B1 (en) * | 2000-01-18 | 2002-07-16 | Micron Technology, Inc. | Structures and methods to enhance copper metallization |
US7211512B1 (en) * | 2000-01-18 | 2007-05-01 | Micron Technology, Inc. | Selective electroless-plated copper metallization |
US6376349B1 (en) * | 2000-01-19 | 2002-04-23 | Motorola, Inc. | Process for forming a semiconductor device and a conductive structure |
JP4592864B2 (ja) * | 2000-03-16 | 2010-12-08 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
US6274484B1 (en) * | 2000-03-17 | 2001-08-14 | Taiwan Semiconductor Manufacturing Company | Fabrication process for low resistivity tungsten layer with good adhesion to insulator layers |
US6423629B1 (en) * | 2000-05-31 | 2002-07-23 | Kie Y. Ahn | Multilevel copper interconnects with low-k dielectrics and air gaps |
US6674167B1 (en) * | 2000-05-31 | 2004-01-06 | Micron Technology, Inc. | Multilevel copper interconnect with double passivation |
KR100632618B1 (ko) * | 2000-06-30 | 2006-10-09 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 전극 형성 방법 |
JP2002016248A (ja) | 2000-06-30 | 2002-01-18 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US6774442B2 (en) | 2000-07-21 | 2004-08-10 | Renesas Technology Corp. | Semiconductor device and CMOS transistor |
US6511912B1 (en) * | 2000-08-22 | 2003-01-28 | Micron Technology, Inc. | Method of forming a non-conformal layer over and exposing a trench |
KR100631937B1 (ko) * | 2000-08-25 | 2006-10-04 | 주식회사 하이닉스반도체 | 텅스텐 게이트 형성방법 |
EP1294015A1 (de) * | 2001-09-12 | 2003-03-19 | Infineon Technologies AG | Verfahren zur Strukturierung einer leitenden Schicht aus polykristallinem Material |
US6716734B2 (en) | 2001-09-28 | 2004-04-06 | Infineon Technologies Ag | Low temperature sidewall oxidation of W/WN/poly-gatestack |
US6509282B1 (en) | 2001-11-26 | 2003-01-21 | Advanced Micro Devices, Inc. | Silicon-starved PECVD method for metal gate electrode dielectric spacer |
JP3781666B2 (ja) | 2001-11-29 | 2006-05-31 | エルピーダメモリ株式会社 | ゲート電極の形成方法及びゲート電極構造 |
JP3976577B2 (ja) | 2002-02-01 | 2007-09-19 | エルピーダメモリ株式会社 | ゲート電極の製造方法 |
JP4559223B2 (ja) * | 2002-07-15 | 2010-10-06 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
JP4275395B2 (ja) * | 2002-12-11 | 2009-06-10 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US20040135218A1 (en) * | 2003-01-13 | 2004-07-15 | Zhizhang Chen | MOS transistor with high k gate dielectric |
US7220665B2 (en) * | 2003-08-05 | 2007-05-22 | Micron Technology, Inc. | H2 plasma treatment |
JP4191000B2 (ja) | 2003-10-06 | 2008-12-03 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
JP4690120B2 (ja) | 2005-06-21 | 2011-06-01 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
US7675119B2 (en) | 2006-12-25 | 2010-03-09 | Elpida Memory, Inc. | Semiconductor device and manufacturing method thereof |
KR100844940B1 (ko) | 2006-12-27 | 2008-07-09 | 주식회사 하이닉스반도체 | 다중 확산방지막을 구비한 반도체소자 및 그의 제조 방법 |
DE102007045074B4 (de) * | 2006-12-27 | 2009-06-18 | Hynix Semiconductor Inc., Ichon | Halbleiterbauelement mit Gatestapelstruktur |
US7820555B2 (en) * | 2007-10-11 | 2010-10-26 | International Business Machines Corporation | Method of patterning multilayer metal gate structures for CMOS devices |
KR100939777B1 (ko) | 2007-11-30 | 2010-01-29 | 주식회사 하이닉스반도체 | 텅스텐막 형성방법 및 이를 이용한 반도체 소자의 배선형성방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4663825A (en) * | 1984-09-27 | 1987-05-12 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
JP2681887B2 (ja) * | 1987-03-06 | 1997-11-26 | シ−メンス、アクチエンゲゼルシヤフト | 3次元1トランジスタメモリセル構造とその製法 |
JP2537413B2 (ja) * | 1989-03-14 | 1996-09-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5462895A (en) * | 1991-09-04 | 1995-10-31 | Oki Electric Industry Co., Ltd. | Method of making semiconductor device comprising a titanium nitride film |
KR940010564B1 (ko) * | 1991-10-10 | 1994-10-24 | 금성일렉트론 주식회사 | 전계효과 트랜지스터 및 그 제조방법 |
KR0179677B1 (ko) * | 1993-12-28 | 1999-04-15 | 사토 후미오 | 반도체장치 및 그 제조방법 |
JP3351635B2 (ja) * | 1993-12-28 | 2002-12-03 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5545592A (en) * | 1995-02-24 | 1996-08-13 | Advanced Micro Devices, Inc. | Nitrogen treatment for metal-silicide contact |
US5733816A (en) * | 1995-12-13 | 1998-03-31 | Micron Technology, Inc. | Method for depositing a tungsten layer on silicon |
US5926730A (en) * | 1997-02-19 | 1999-07-20 | Micron Technology, Inc. | Conductor layer nitridation |
TW322608B (en) * | 1997-07-31 | 1997-12-11 | United Microelectronics Corp | Manufacturing method of self-aligned salicide |
US5913145A (en) * | 1997-08-28 | 1999-06-15 | Texas Instruments Incorporated | Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures |
-
1998
- 1998-10-07 JP JP10321238A patent/JPH11233451A/ja active Pending
- 1998-10-07 DE DE69840399T patent/DE69840399D1/de not_active Expired - Lifetime
- 1998-10-07 EP EP98308170A patent/EP0908934B1/de not_active Expired - Lifetime
- 1998-10-07 US US09/167,951 patent/US6187656B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6187656B1 (en) | 2001-02-13 |
JPH11233451A (ja) | 1999-08-27 |
EP0908934B1 (de) | 2008-12-31 |
EP0908934A2 (de) | 1999-04-14 |
EP0908934A3 (de) | 1999-08-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |