FR2802948B1 - Procede de croissance de monocristaux d'orthophosphates metalliques - Google Patents

Procede de croissance de monocristaux d'orthophosphates metalliques

Info

Publication number
FR2802948B1
FR2802948B1 FR0016890A FR0016890A FR2802948B1 FR 2802948 B1 FR2802948 B1 FR 2802948B1 FR 0016890 A FR0016890 A FR 0016890A FR 0016890 A FR0016890 A FR 0016890A FR 2802948 B1 FR2802948 B1 FR 2802948B1
Authority
FR
France
Prior art keywords
single crystals
growing single
orthophosphates
metallic
metallic orthophosphates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0016890A
Other languages
English (en)
Other versions
FR2802948A1 (fr
Inventor
Peter Krempl
Wolgang Wallnofer
Ferdinand Krispel
Herbert Thanner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AVL List GmbH
Original Assignee
AVL List GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AVL List GmbH filed Critical AVL List GmbH
Publication of FR2802948A1 publication Critical patent/FR2802948A1/fr
Application granted granted Critical
Publication of FR2802948B1 publication Critical patent/FR2802948B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR0016890A 1999-12-28 2000-12-22 Procede de croissance de monocristaux d'orthophosphates metalliques Expired - Fee Related FR2802948B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0219599A AT408456B (de) 1999-12-28 1999-12-28 Verfahren zum züchten von einkristallen

Publications (2)

Publication Number Publication Date
FR2802948A1 FR2802948A1 (fr) 2001-06-29
FR2802948B1 true FR2802948B1 (fr) 2004-02-27

Family

ID=3529757

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0016890A Expired - Fee Related FR2802948B1 (fr) 1999-12-28 2000-12-22 Procede de croissance de monocristaux d'orthophosphates metalliques

Country Status (6)

Country Link
US (1) US6491753B2 (fr)
CN (1) CN1246505C (fr)
AT (1) AT408456B (fr)
DE (1) DE10060575C2 (fr)
FR (1) FR2802948B1 (fr)
RU (1) RU2194100C2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4249502B2 (ja) * 2003-02-04 2009-04-02 日本電波工業株式会社 圧電結晶材料及び圧電振動子
US6979938B2 (en) * 2003-06-18 2005-12-27 Xerox Corporation Electronic device formed from a thin film with vertically oriented columns with an insulating filler material
US7288125B1 (en) 2004-11-03 2007-10-30 Ron Williams Crystal growing kit and method
CN100350081C (zh) * 2005-10-08 2007-11-21 山东大学 磷酸镓晶体的助熔剂生长法
CN100363253C (zh) * 2006-06-26 2008-01-23 山东大学 一种助熔剂生长磷酸铝晶体的方法
CN100494513C (zh) * 2007-08-07 2009-06-03 山东大学 磷酸三镓晶体的助熔剂生长法
EP2439316A4 (fr) * 2009-06-01 2014-01-29 Mitsubishi Chem Corp Cristal de nitrure semi-conducteur et procédé pour le fabriquer
KR20140068793A (ko) * 2010-10-29 2014-06-09 더 리전츠 오브 더 유니버시티 오브 캘리포니아 서로 간에 예각, 직각 또는 둔각을 이루는 적어도 2개의 표면들을 가진 시드들 상에서의 ⅲ-족 질화물 결정들의 암모니아 열적 성장
CN105967162B (zh) * 2016-07-19 2017-11-28 株洲科能新材料有限责任公司 一种微米级球形磷酸镓的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4559208A (en) * 1981-01-30 1985-12-17 Allied Corporation Hydrothermal crystal growing apparatus
US4578146A (en) * 1983-04-28 1986-03-25 Allied Corporation Process for growing a large single crystal from multiple seed crystals
FR2676753B1 (fr) * 1991-05-24 1993-10-01 France Telecom Procede d'accroissement des dimensions des cristaux elaborables par croissance hydrothermale, utilisant un germe obtenu par assemblage de lames cristallines.
AT398255B (de) * 1992-09-04 1994-11-25 Avl Verbrennungskraft Messtech Hydrothermalzuchtverfahren zum züchten von grossen kristallen oder kristallschichten aus einem metallorthophosphat unter verwendung einer keimplatte

Also Published As

Publication number Publication date
US6491753B2 (en) 2002-12-10
CN1311355A (zh) 2001-09-05
DE10060575A1 (de) 2001-07-19
US20010007238A1 (en) 2001-07-12
AT408456B (de) 2001-12-27
FR2802948A1 (fr) 2001-06-29
CN1246505C (zh) 2006-03-22
RU2194100C2 (ru) 2002-12-10
DE10060575C2 (de) 2003-10-16
ATA219599A (de) 2001-04-15

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Legal Events

Date Code Title Description
ST Notification of lapse