JP6284290B2 - 窒化物半導体層の成長方法、及びそれにより形成される窒化物半導体基板 - Google Patents
窒化物半導体層の成長方法、及びそれにより形成される窒化物半導体基板 Download PDFInfo
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- JP6284290B2 JP6284290B2 JP2011033451A JP2011033451A JP6284290B2 JP 6284290 B2 JP6284290 B2 JP 6284290B2 JP 2011033451 A JP2011033451 A JP 2011033451A JP 2011033451 A JP2011033451 A JP 2011033451A JP 6284290 B2 JP6284290 B2 JP 6284290B2
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Description
30 GaNドット
40 ストレス緩衝層
50 GaN層
Claims (4)
- サファイア基板を準備するステップと、
前記サファイア基板上にGaNドットを一方向に整列されるように形成するステップと、
前記GaNドット上にGaN層を、300ないし400μmの厚さまで成長させるステップを含み、
前記GaN層の前記GaNドットの側に、前記GaN層が成長する間に、ストレス緩衝層が形成され、
前記ストレス緩衝層の厚さは、40ないし50μmであり、
前記GaNドットの90%が、0.4ないし0.8μmのサイズであり、
前記GaNドットは、六角形の形態を有するGaN層の成長方法。 - 前記GaN層は、HVPE(Halide Vapor Phase Epitaxy)法を使用して成長される請求項1に記載のGaN層の成長方法。
- 前記GaN層は、レーザーリフトオフ法により前記サファイア基板から分離されて、GaN基板として使われる請求項1に記載のGaN層の成長方法。
- 前記GaNドットは、前記GaN層の面上に位置する請求項3に記載のGaN層の成長方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100015247 | 2010-02-19 | ||
KR10-2010-0015247 | 2010-02-19 | ||
KR10-2010-0082085 | 2010-08-24 | ||
KR1020100082085A KR20110095796A (ko) | 2010-02-19 | 2010-08-24 | 질화물 반도체층 성장 방법 및 이에 의해 형성되는 질화물 반도체 기판 |
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JP2011168481A JP2011168481A (ja) | 2011-09-01 |
JP6284290B2 true JP6284290B2 (ja) | 2018-02-28 |
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JP2011033451A Active JP6284290B2 (ja) | 2010-02-19 | 2011-02-18 | 窒化物半導体層の成長方法、及びそれにより形成される窒化物半導体基板 |
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US (3) | US8357594B2 (ja) |
EP (1) | EP2362412B1 (ja) |
JP (1) | JP6284290B2 (ja) |
CN (2) | CN102191539A (ja) |
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JP6284290B2 (ja) | 2010-02-19 | 2018-02-28 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 窒化物半導体層の成長方法、及びそれにより形成される窒化物半導体基板 |
KR102094471B1 (ko) | 2013-10-07 | 2020-03-27 | 삼성전자주식회사 | 질화물 반도체층의 성장방법 및 이에 의하여 형성된 질화물 반도체 |
KR102099877B1 (ko) | 2013-11-05 | 2020-04-10 | 삼성전자 주식회사 | 질화물 반도체 디바이스의 제조 방법 |
JP6248359B2 (ja) * | 2013-12-20 | 2017-12-20 | 住友電工デバイス・イノベーション株式会社 | 半導体層の表面処理方法 |
DE102014101966A1 (de) | 2014-02-17 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines elektronischen Halbleiterchips und elektronischer Halbleiterchip |
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JP6284290B2 (ja) | 2010-02-19 | 2018-02-28 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 窒化物半導体層の成長方法、及びそれにより形成される窒化物半導体基板 |
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- 2011-02-21 CN CN2011100415434A patent/CN102191539A/zh active Pending
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Publication number | Publication date |
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US8357594B2 (en) | 2013-01-22 |
US20120319131A1 (en) | 2012-12-20 |
US20150115280A1 (en) | 2015-04-30 |
US9318660B2 (en) | 2016-04-19 |
CN108342773A (zh) | 2018-07-31 |
CN102191539A (zh) | 2011-09-21 |
EP2362412B1 (en) | 2020-04-08 |
JP2011168481A (ja) | 2011-09-01 |
EP2362412A1 (en) | 2011-08-31 |
US20110204377A1 (en) | 2011-08-25 |
US8962458B2 (en) | 2015-02-24 |
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