CN103811592A - 发光二极管制造方法 - Google Patents

发光二极管制造方法 Download PDF

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CN103811592A
CN103811592A CN201210449786.6A CN201210449786A CN103811592A CN 103811592 A CN103811592 A CN 103811592A CN 201210449786 A CN201210449786 A CN 201210449786A CN 103811592 A CN103811592 A CN 103811592A
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gan layer
protuberance
doped gan
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light
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邱镜学
林雅雯
凃博闵
黄世晟
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Zhanjing Technology Shenzhen Co Ltd
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Priority to TW101143070A priority patent/TW201424032A/zh
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract

一种发光二极管的制造方法，包括以下的步骤：提供一个蓝宝石基板，蓝宝石基板的表面形成有多个凸出部；在蓝宝石基板的表面成长一个未掺杂GaN层，所述未掺杂GaN层完全覆盖或者不完全覆盖所述凸出部以露出凸出部的部分区域；蚀刻位于凸出部的顶部区域的未掺杂GaN层直至暴露出凸出部的顶部区域；在凸出部的顶部区域以及未掺杂GaN层上依次成长N型GaN层、活性层以及P型GaN层。在上述方法中，通过蚀刻将位于凸出部顶部区域的未掺杂GaN层。此时，由于缺陷集中的部分被去除，所生长的发光二极管晶体缺陷将减少。

Description

发光二极管制造方法
技术领域
本发明涉及一种发光二极管的制造方法，尤其涉及一种可有效降低晶体缺陷的发光二极管制造方法。
背景技术
发光二极管(Light Emitting Diode，LED)是一种可将电流转换成特定波长范围的光电半导体元件。发光二极管以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点，从而可作为光源而广泛应用于照明领域。
在LED的磊晶生长过程中，如何降低LED晶粒的晶体缺陷是人们需要考虑的问题。一种制备低缺陷的LED晶粒的方法是采用图案化的蓝宝石基板。即，在蓝宝石基板上形成多个凸出部，所述多个凸出部可使到后续磊晶过程中半导体层形成侧向生长，从而降低LED晶粒的晶体缺陷。然而，在上述过程中，缺陷容易集中在凸出部顶部的磊晶层中，从而对后续的磊晶层的成长造成影响。
发明内容
有鉴于此，有必要提供一种可有效降低晶体缺陷的发光二极管的制造方法。
一种发光二极管的制造方法，包括以下的步骤：
提供一个蓝宝石基板，蓝宝石基板的表面形成有多个凸出部；
在蓝宝石基板的表面成长一个未掺杂GaN层，所述未掺杂GaN层不完全覆盖所述凸出部以露出凸出部的部分区域；
蚀刻位于凸出部的顶部区域的未掺杂GaN层直至暴露出凸出部的顶部区域；
在凸出部的顶部区域以及未掺杂GaN层上依次成长N型GaN层、活性层以及P型GaN层。
一种发光二极管的制造方法，包括以下的步骤：
提供一个蓝宝石基板，蓝宝石基板的表面形成有多个凸出部；
在蓝宝石基板的表面成长一个未掺杂GaN层直至未掺杂GaN层完全覆盖凸出部的顶部区域；
蚀刻未掺杂GaN层直至暴露出凸出部的顶部区域；
在凸出部的顶部区域以及未掺杂GaN层上依次成长N型GaN层、活性层以及P型GaN层。
在上述发光二极管的制造方法中，通过蚀刻将位于凸出部顶部区域的未掺杂GaN层。此时，由于缺陷集中的部分被去除，在后续生长N型GaN层、活性层以及P型GaN层时，所述缺陷将不会影响其生长过程，从而降低后续半导体层生长过程中的缺陷。
附图说明
图1是本发明实施例所提供的发光二极管的制造方法的第一个步骤。
图2是本发明实施例所提供的发光二极管的制造方法的第二个步骤。
图3是本发明实施例所提供的发光二极管的制造方法的第三个步骤。
图4是本发明实施例所提供的发光二极管的制造方法的第四个步骤。
图5是本发明实施例所提供的发光二极管的制造方法的第五个步骤。
主要元件符号说明
蓝宝石基板 110
凸出部 111
未掺杂的GaN层 120、130
第一部分 121
第二部分 122
N型GaN层 140
活性层 150
P型GaN层 160
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
以下参照图示，对本发明的发光二极管制造方法进行进一步的说明。
请参见图1，首先提供一个蓝宝石基板110。所述蓝宝石基板110的表面具有多个凸出部111。在本实施例中，所述凸出部111的横截面为半圆形状。根据需要，所述凸出部111的横截面也可以是三角形形状，梯形形状或其他多边形形状。
请参见图2，在蓝宝石基板110的表面成长未掺杂的GaN层120，所述未掺杂的GaN层120不完全覆盖所述凸出部111以露出凸出部111的部分区域。在本实施例中，所述未掺杂的GaN层120包括位于相邻两个凸出部111之间的第一部分121以及位于凸出部111顶部的第二部分122。
请参见图3，蚀刻所述未掺杂的GaN层120，直至露出凸出部111的顶部区域。所述蚀刻的方法可以是干法蚀刻或者是湿法蚀刻。在本实施例中，所述蚀刻通过电感耦合等离子蚀刻的方法进行。根据需要，在蚀刻至露出凸出部111的顶部区域时，还可以继续对未掺杂的GaN层120蚀刻一段时间，以完全去除未掺杂的GaN层120的第二部分122。
请参见图4，在凸出部111的顶部区域以及未掺杂的GaN层120上继续成长一层未掺杂的GaN层130。
请参见图5，在未掺杂的GaN层130上依次成长N型GaN层140、活性层150以及P型GaN层160。在本实施例中，所述活性层150为多量子阱层。根据需要，也可以不成长未掺杂的GaN层130而直接在凸出部111的顶部区域以及未掺杂的GaN层120上成长N型GaN层140、活性层150以及P型GaN层160。
在上述发光二极管的制造方法中，通过蚀刻将位于凸出部111顶部的未掺杂的GaN层120的第二部分122去除，此时，由于晶体缺陷集中的部分被去除，在后续生长的N型GaN层140、活性层150以及P型GaN层160的时候，所述的缺陷将不会向上延伸而影响其晶体质量，从而降低发光二极管的晶体缺陷。
根据需要，在成长未掺杂的GaN层120的时候，所述未掺杂的GaN层120亦可生长至完全覆盖凸出部111的顶部区域。此时，在蚀刻未掺杂的GaN层120时，可以对未掺杂的GaN层120的整个表面进行蚀刻直至暴露出凸出部111的顶部区域。同时在暴露出凸出部111的顶部区域之后，还可以继续对未掺杂的GaN层120蚀刻一段时间直至未掺杂的GaN层120的表面的高度小于凸出部111的顶部的高度。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种发光二极管的制造方法，包括以下的步骤：
提供一个蓝宝石基板，蓝宝石基板的表面形成有多个凸出部；
在蓝宝石基板的表面成长一个未掺杂GaN层，所述未掺杂GaN层不完全覆盖所述凸出部以露出凸出部的部分区域；
蚀刻位于凸出部的顶部区域的未掺杂GaN层直至暴露出凸出部的顶部区域；
在凸出部的顶部区域以及未掺杂GaN层上依次成长N型GaN层、活性层以及P型GaN层。
2.如权利要求1所述的发光二极管的制造方法，其特征在于，所述蚀刻未掺杂GaN层的过程以干蚀刻或者湿蚀刻的方法进行。
3.如权利要求1所述的发光二极管的制造方法，其特征在于，所述活性层为多量子阱层。
4.如权利要求1所述的发光二极管的制造方法，其特征在于，所述凸出部的截面为半圆形状、三角形形状，梯形形状或其他多边形形状。
5.如权利要求1所述的发光二极管的制造方法，其特征在于，在成长N型GaN层、活性层以及P型GaN层之前，先在凸出部的顶部区域以及未掺杂GaN层继续生长未掺杂GaN层直至所述未掺杂GaN层覆盖凸出部的顶部区域。
6.一种发光二极管的制造方法，包括以下的步骤：
提供一个蓝宝石基板，蓝宝石基板的表面形成有多个凸出部；
在蓝宝石基板的表面成长一个未掺杂GaN层直至未掺杂GaN层完全覆盖凸出部的顶部区域；
蚀刻未掺杂GaN层直至暴露出凸出部的顶部区域；
在凸出部的顶部区域以及未掺杂GaN层上依次成长N型GaN层、活性层以及P型GaN层。
7.如权利要求6所述的发光二极管的制造方法，其特征在于，所述蚀刻未掺杂GaN层的过程以干蚀刻或者湿蚀刻的方法进行。
8.如权利要求6所述的发光二极管的制造方法，其特征在于，所述活性层为多量子阱层。
9.如权利要求6所述的发光二极管的制造方法，其特征在于，所述凸出部的截面为半圆形状、三角形形状，梯形形状或其他多边形形状。
10.如权利要求6所述的发光二极管的制造方法，其特征在于，在成长N型GaN层、活性层以及P型GaN层之前，先在凸出部的顶部区域以及未掺杂GaN层继续生长未掺杂GaN层直至所述未掺杂GaN层覆盖凸出部的顶部区域。
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