DE69511995T2 - Verfahren zum züchten von galliumnitridhalbleiterkristallen und vorrichtung - Google Patents

Verfahren zum züchten von galliumnitridhalbleiterkristallen und vorrichtung

Info

Publication number
DE69511995T2
DE69511995T2 DE69511995T DE69511995T DE69511995T2 DE 69511995 T2 DE69511995 T2 DE 69511995T2 DE 69511995 T DE69511995 T DE 69511995T DE 69511995 T DE69511995 T DE 69511995T DE 69511995 T2 DE69511995 T2 DE 69511995T2
Authority
DE
Germany
Prior art keywords
nitride semiconductor
gallium nitride
semiconductor crystals
growing gallium
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69511995T
Other languages
English (en)
Other versions
DE69511995D1 (de
Inventor
Seiji Togawa
Hitoshi Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Japan Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Energy Corp filed Critical Japan Energy Corp
Publication of DE69511995D1 publication Critical patent/DE69511995D1/de
Application granted granted Critical
Publication of DE69511995T2 publication Critical patent/DE69511995T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Led Devices (AREA)
DE69511995T 1994-04-08 1995-04-05 Verfahren zum züchten von galliumnitridhalbleiterkristallen und vorrichtung Expired - Lifetime DE69511995T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9396394 1994-04-08
JP24680394 1994-09-16
PCT/JP1995/000654 WO1995027815A1 (fr) 1994-04-08 1995-04-05 Procede de tirage d'un cristal semi-conducteur constitue par un compose de nitrure de gallium et dispositif semi-conducteur a composes de nitrure de gallium

Publications (2)

Publication Number Publication Date
DE69511995D1 DE69511995D1 (de) 1999-10-14
DE69511995T2 true DE69511995T2 (de) 2000-04-20

Family

ID=26435223

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69511995T Expired - Lifetime DE69511995T2 (de) 1994-04-08 1995-04-05 Verfahren zum züchten von galliumnitridhalbleiterkristallen und vorrichtung

Country Status (5)

Country Link
US (1) US5716450A (de)
EP (1) EP0711853B1 (de)
JP (1) JP3293035B2 (de)
DE (1) DE69511995T2 (de)
WO (1) WO1995027815A1 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3564645B2 (ja) * 1995-01-27 2004-09-15 株式会社日鉱マテリアルズ 窒化ガリウム系半導体結晶の成長方法
US5981980A (en) * 1996-04-22 1999-11-09 Sony Corporation Semiconductor laminating structure
DE69705458T2 (de) * 1996-04-22 2002-04-18 Sony Corp Kristallzüchtungssubstrat
JP3721674B2 (ja) * 1996-12-05 2005-11-30 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体基板の製造方法
EP0856600B1 (de) * 1997-01-30 2001-04-25 Nippon Telegraph And Telephone Corporation LiGa02 Einkristall, Einkristallinessubstrat und Verfahren zu ihrer Herstellung
JPH10242579A (ja) * 1997-02-27 1998-09-11 Sharp Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
US6140669A (en) * 1999-02-20 2000-10-31 Ohio University Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission
JP4728460B2 (ja) * 1999-03-17 2011-07-20 Ｊｘ日鉱日石金属株式会社 窒化ガリウム系化合物半導体単結晶の製造方法
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
PL207400B1 (pl) 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
US7160388B2 (en) * 2001-06-06 2007-01-09 Nichia Corporation Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
JP2003007621A (ja) 2001-06-21 2003-01-10 Nikko Materials Co Ltd ＧａＮ系化合物半導体結晶の製造方法
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US20030013223A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant III-V arsenide nitride substrate used to form the same
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
JP4693351B2 (ja) 2001-10-26 2011-06-01 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシャル成長用基板
PL374180A1 (en) 2001-10-26 2005-10-03 Ammono Sp.Z O.O. Nitride semiconductor laser element, and production method therefor
JP2003218043A (ja) * 2002-01-28 2003-07-31 Nikko Materials Co Ltd ＧａＮ系化合物半導体結晶の製造方法
JP4150527B2 (ja) 2002-02-27 2008-09-17 日鉱金属株式会社 結晶の製造方法
TWI274735B (en) 2002-05-17 2007-03-01 Ammono Sp Zoo Bulk single crystal production facility employing supercritical ammonia
WO2003098757A1 (fr) 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Structure d'element electroluminescent comprenant une couche de monocristaux de nitrure en vrac
US20060138431A1 (en) 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
AU2003285768A1 (en) 2002-12-11 2004-06-30 Ammono Sp. Z O.O. A template type substrate and a method of preparing the same
PL224993B1 (pl) 2002-12-11 2017-02-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
US7294199B2 (en) * 2004-06-10 2007-11-13 Sumitomo Electric Industries, Ltd. Nitride single crystal and producing method thereof
PL1769105T3 (pl) 2004-06-11 2014-11-28 Ammono S A Objętościowy monokrystaliczny azotek galu oraz sposób jego wytwarzania
PL371405A1 (pl) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
TWI490918B (zh) * 2006-01-20 2015-07-01 Univ California 半極性氮化（鋁，銦，鎵，硼）之改良成長方法
KR20090053827A (ko) 2006-09-20 2009-05-27 닛코킨조쿠 가부시키가이샤 ＧａＮ 박막 템플레이트 기판의 제조 방법, ＧａＮ 박막 템플레이트 기판, 및 ＧａＮ 후막 단결정
US20100101486A1 (en) 2007-03-14 2010-04-29 Misao Takakusaki Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystal
JP5424476B2 (ja) * 2009-11-11 2014-02-26 学校法人早稲田大学 単結晶基板、その製造方法、当該単結晶基板上に形成してなる半導体薄膜、および半導体構造
JP2011093803A (ja) * 2011-02-02 2011-05-12 Jx Nippon Mining & Metals Corp 窒化ガリウム系化合物半導体単結晶の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1619011A (en) * 1925-05-12 1927-03-01 Calvin A Agar Shipping member
US1955833A (en) * 1931-06-17 1934-04-24 Aerolite Company Inc Building material
US3743568A (en) * 1971-03-31 1973-07-03 Wolf H De Corrugated panel structure having vertically oriented columnar shapes
US3929536A (en) * 1972-05-10 1975-12-30 Westvaco Corp Moisture resistant corner post
US4424753A (en) * 1982-08-05 1984-01-10 Down River International, Inc. Pallet of composite construction
JPS62119196A (ja) * 1985-11-18 1987-05-30 Univ Nagoya 化合物半導体の成長方法
JP3026087B2 (ja) * 1989-03-01 2000-03-27 豊田合成株式会社 窒化ガリウム系化合物半導体の気相成長方法
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor

Also Published As

Publication number Publication date
WO1995027815A1 (fr) 1995-10-19
DE69511995D1 (de) 1999-10-14
US5716450A (en) 1998-02-10
EP0711853A4 (de) 1996-09-11
EP0711853B1 (de) 1999-09-08
JP3293035B2 (ja) 2002-06-17
EP0711853A1 (de) 1996-05-15

Similar Documents

Publication Publication Date Title
DE69511995D1 (de) Verfahren zum züchten von galliumnitridhalbleiterkristallen und vorrichtung
DE69615603D1 (de) Vorrichtung und Verfahren zum Reinigen von Halbleiterplättchen
DE69607547T2 (de) Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben
DE59704120D1 (de) Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben
DE69509561D1 (de) Verfahren und Vorrichtung zum Abfasen von Halbleiterscheiben
DE69730097D1 (de) Verfahren und Vorrichtung zur Behandlung von Wafers
DE19580932T1 (de) Verfahren und Vorrichtung zum Polieren von Wafern
DE69739537D1 (de) Verfahren und Vorrichtung zur Behandlung eines Halbleitersubstrats
DE69024077D1 (de) Einrichtung und Verfahren zur Behandlung von Halbleiterscheiben
DE59407304D1 (de) VORRICHTUNG UND VERFAHREN ZUM HERSTELLEN VON SiC-EINKRISTALLEN
DE59802824D1 (de) Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben
DE69904074T2 (de) Verfahren und vorrichtung zum polieren von halbleiterscheiben
DE69619513D1 (de) Verfahren und vorrichtung zum züchten von einkristallen
DE68916157D1 (de) Vorrichtung und Verfahren zur Züchtung von Kristallen aus Halbleitermaterialien.
DE59900416D1 (de) Verfahren und Vorrichtung zur Herstellung eines zylinderförmigen Einkristalls und Verfahren zum Abtrennen von Halbleiterscheiben
DE69839723D1 (de) Verfahren und Vorrichtung zur Herstellung von Halbleiterkristallen
DE69618882D1 (de) Verfahren und Vorrichtung zum Polieren von Halbleitersubstraten
DE3878990D1 (de) Vorrichtung und verfahren zur zuechtung von kristallen aus halbleitermaterialien.
DE59506491D1 (de) Verfahren und vorrichtung zum herstellen von siliciumcarbid-einkristallen durch sublimationszüchtung
DE69703312D1 (de) Vorrichtung und Verfahren zum Polieren von Halbleiterscheiben
DE69901830T2 (de) Vorrichtung und Verfahren zur Kristallzüchtung
DE59508757D1 (de) Verfahren und Vorrichtung zum Reinigen von Siliziumscheiben
DE69419942T2 (de) Verfahren und vorrichtung zur behandlung einer halbleiterscheibe in einer flüssigkeit
DE69308937D1 (de) Verfahren und Vorrichtung zum Abschneiden einer Halbleiterscheibe
DE69429130T2 (de) Verfahren zum epitaxialen Wachstum und Vorrichtungen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NIKKO MATERIALS CO., LTD., TOKIO/TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: NIPPON MINING & METALS CO., LTD., TOKIO/TOKYO, JP

R082 Change of representative

Ref document number: 711853

Country of ref document: EP

Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 80538 MUENCHEN, DE