DE68916157D1 - Vorrichtung und Verfahren zur Züchtung von Kristallen aus Halbleitermaterialien. - Google Patents

Vorrichtung und Verfahren zur Züchtung von Kristallen aus Halbleitermaterialien.

Info

Publication number
DE68916157D1
DE68916157D1 DE68916157T DE68916157T DE68916157D1 DE 68916157 D1 DE68916157 D1 DE 68916157D1 DE 68916157 T DE68916157 T DE 68916157T DE 68916157 T DE68916157 T DE 68916157T DE 68916157 D1 DE68916157 D1 DE 68916157D1
Authority
DE
Germany
Prior art keywords
semiconductor materials
growing crystals
crystals
growing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68916157T
Other languages
English (en)
Other versions
DE68916157T2 (de
Inventor
Yoshiaki C O Chuo-Kenkyus Arai
Michio C O Chuo-Kenkyusho Kida
Naoki C O Chuo-Kenkyusho Ono
Kensho C O Chuo-Kenkyus Sahira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Application granted granted Critical
Publication of DE68916157D1 publication Critical patent/DE68916157D1/de
Publication of DE68916157T2 publication Critical patent/DE68916157T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE68916157T 1988-10-13 1989-10-13 Vorrichtung und Verfahren zur Züchtung von Kristallen aus Halbleitermaterialien. Expired - Fee Related DE68916157T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63257608A JPH02107587A (ja) 1988-10-13 1988-10-13 半導体単結晶育成装置

Publications (2)

Publication Number Publication Date
DE68916157D1 true DE68916157D1 (de) 1994-07-21
DE68916157T2 DE68916157T2 (de) 1994-11-24

Family

ID=17308632

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68916157T Expired - Fee Related DE68916157T2 (de) 1988-10-13 1989-10-13 Vorrichtung und Verfahren zur Züchtung von Kristallen aus Halbleitermaterialien.

Country Status (4)

Country Link
US (1) US5196173A (de)
EP (1) EP0364899B1 (de)
JP (1) JPH02107587A (de)
DE (1) DE68916157T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3077273B2 (ja) * 1991-07-30 2000-08-14 三菱マテリアル株式会社 単結晶引上装置
US5373805A (en) * 1991-10-17 1994-12-20 Shin-Etsu Handotai Co., Ltd. Single crystal pulling apparatus
JP2795036B2 (ja) * 1992-02-04 1998-09-10 信越半導体株式会社 単結晶引上装置
JP2888079B2 (ja) * 1993-02-04 1999-05-10 信越半導体株式会社 シリコン単結晶引上げ用ルツボ
JP2686223B2 (ja) * 1993-11-30 1997-12-08 住友シチックス株式会社 単結晶製造装置
GB9412629D0 (en) * 1994-06-23 1994-08-10 Secr Defence Improvements in crystal growth
JPH0859386A (ja) * 1994-08-22 1996-03-05 Mitsubishi Materials Corp 半導体単結晶育成装置
US5683505A (en) * 1994-11-08 1997-11-04 Sumitomo Sitix Corporation Process for producing single crystals
US5980629A (en) * 1995-06-14 1999-11-09 Memc Electronic Materials, Inc. Methods for improving zero dislocation yield of single crystals
US5976247A (en) * 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US5900059A (en) * 1996-05-29 1999-05-04 Komatsu Electronic Metals Co., Ltd. Method and apparatus for fabricating semiconductor single crystal
US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
US6503594B2 (en) 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
SG64470A1 (en) 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
US6572700B2 (en) * 1997-12-26 2003-06-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof
DE60013451T2 (de) * 1999-05-22 2005-10-13 Japan Science And Technology Agency, Kawaguchi Verfahren und vorrichtung zur herstellung von hochqualitativen einkristallen
TWI298752B (en) * 2004-08-02 2008-07-11 Univ Nat Taiwan Method and apparatus for forming long single crystals with good uniformity
JP2006069841A (ja) * 2004-09-02 2006-03-16 Sumco Corp 磁場印加式シリコン単結晶の引上げ方法
US20130111730A1 (en) * 2011-11-07 2013-05-09 Graftech International Holdings Inc. Graphite Crucible for Silicone Crystal Production and Method of Ingot Removal

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
GB939102A (en) * 1959-02-18 1963-10-09 Philco Corp Improvements in and relating to the production of crystals, and apparatus for use therein
US3637439A (en) * 1968-11-13 1972-01-25 Metallurgie Hoboken Process and apparatus for pulling single crystals of germanium
JPS6018634B2 (ja) * 1978-09-27 1985-05-11 ソニー株式会社 結晶引上げ装置
JPS58204895A (ja) * 1982-05-25 1983-11-29 Nippon Telegr & Teleph Corp <Ntt> 結晶引上げ方法および装置
DE3316547C2 (de) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Kalter Tiegel für das Erschmelzen nichtmetallischer anorganischer Verbindungen
JPS6018634A (ja) * 1983-07-11 1985-01-30 Bridgestone Corp 防振装置
JPS6259594A (ja) * 1985-09-11 1987-03-16 Sumitomo Electric Ind Ltd 結晶の引上げ方法
JPS6287489A (ja) * 1985-10-12 1987-04-21 Sumitomo Electric Ind Ltd るつぼの回収方法及び装置
JPS62275088A (ja) * 1986-05-21 1987-11-30 Sumitomo Electric Ind Ltd 結晶引き上げ装置
JPS63195188A (ja) * 1987-02-06 1988-08-12 Sumitomo Electric Ind Ltd 化合物半導体単結晶の製造方法および製造装置
JPS63248792A (ja) * 1987-03-31 1988-10-17 Sumitomo Electric Ind Ltd 内るつぼ回収方法および装置
JPS63282187A (ja) * 1987-05-11 1988-11-18 Sumitomo Electric Ind Ltd 単結晶製造装置および方法
CA1305909C (en) * 1987-06-01 1992-08-04 Michio Kida Apparatus and process for growing crystals of semiconductor materials
JPS63303894A (ja) * 1987-06-01 1988-12-12 Mitsubishi Metal Corp シリコン単結晶育成方法
JPS6483593A (en) * 1987-09-24 1989-03-29 Mitsubishi Metal Corp Apparatus for growing semiconductor single crystal
JPS6472987A (en) * 1987-09-16 1989-03-17 Toshiba Corp Device for pulling up silicon single crystal
JP2984770B2 (ja) * 1991-06-29 1999-11-29 カシオ計算機株式会社 電子時計

Also Published As

Publication number Publication date
DE68916157T2 (de) 1994-11-24
US5196173A (en) 1993-03-23
EP0364899B1 (de) 1994-06-15
EP0364899A1 (de) 1990-04-25
JPH02107587A (ja) 1990-04-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee