DE68918049D1 - Verfahren und Vorrichtung zur epitaktischen Züchtung. - Google Patents
Verfahren und Vorrichtung zur epitaktischen Züchtung.Info
- Publication number
- DE68918049D1 DE68918049D1 DE68918049T DE68918049T DE68918049D1 DE 68918049 D1 DE68918049 D1 DE 68918049D1 DE 68918049 T DE68918049 T DE 68918049T DE 68918049 T DE68918049 T DE 68918049T DE 68918049 D1 DE68918049 D1 DE 68918049D1
- Authority
- DE
- Germany
- Prior art keywords
- epitaxial growth
- epitaxial
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
- Y10S117/904—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/974—Substrate surface preparation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28389588 | 1988-11-11 | ||
JP1063872A JPH02225399A (ja) | 1988-11-11 | 1989-03-17 | エピタキシャル成長方法および成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68918049D1 true DE68918049D1 (de) | 1994-10-13 |
DE68918049T2 DE68918049T2 (de) | 1995-01-05 |
Family
ID=26405010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68918049T Expired - Fee Related DE68918049T2 (de) | 1988-11-11 | 1989-11-09 | Verfahren und Vorrichtung zur epitaktischen Züchtung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5120394A (de) |
EP (1) | EP0368651B1 (de) |
JP (1) | JPH02225399A (de) |
DE (1) | DE68918049T2 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02258689A (ja) * | 1989-03-31 | 1990-10-19 | Canon Inc | 結晶質薄膜の形成方法 |
US5358895A (en) * | 1993-05-27 | 1994-10-25 | Motorola, Inc. | Low temperature silicon epitaxy with germanium doping |
US5380677A (en) * | 1993-06-23 | 1995-01-10 | Vlsi Technology, Inc. | Method for reducing resistance at interface of single crystal silicon and deposited silicon |
JP3865803B2 (ja) * | 1995-08-29 | 2007-01-10 | 株式会社半導体エネルギー研究所 | 光処理方法および半導体装置の作製方法 |
JP3907726B2 (ja) * | 1995-12-09 | 2007-04-18 | 株式会社半導体エネルギー研究所 | 微結晶シリコン膜の作製方法、半導体装置の作製方法及び光電変換装置の作製方法 |
US5817174A (en) * | 1995-12-15 | 1998-10-06 | Kabushiki Kaisha Toshiba | Semiconductor substrate and method of treating semiconductor substrate |
JP2954039B2 (ja) * | 1996-09-05 | 1999-09-27 | 日本電気株式会社 | SiGe薄膜の成膜方法 |
US5767543A (en) * | 1996-09-16 | 1998-06-16 | Motorola, Inc. | Ferroelectric semiconductor device having a layered ferroelectric structure |
US7041170B2 (en) | 1999-09-20 | 2006-05-09 | Amberwave Systems Corporation | Method of producing high quality relaxed silicon germanium layers |
KR100345304B1 (ko) | 2000-10-12 | 2002-07-25 | 한국전자통신연구원 | 수직형 초고진공 화학증착장치 |
US6674102B2 (en) * | 2001-01-25 | 2004-01-06 | International Business Machines Corporation | Sti pull-down to control SiGe facet growth |
EP1887617B1 (de) * | 2001-02-12 | 2020-07-22 | ASM America, Inc. | Auftragungsverfahren auf gemischte Substrate unter Verwendung von Trisilan |
US7026219B2 (en) | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
EP1421607A2 (de) | 2001-02-12 | 2004-05-26 | ASM America, Inc. | Verbesserter prozess zur ablagerung von halbleiterfilmen |
JP3619157B2 (ja) * | 2001-02-13 | 2005-02-09 | キヤノン株式会社 | 光学素子、該光学素子を有する露光装置、洗浄装置及び光学素子の洗浄方法 |
US7297641B2 (en) | 2002-07-19 | 2007-11-20 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
US7294582B2 (en) | 2002-07-19 | 2007-11-13 | Asm International, N.V. | Low temperature silicon compound deposition |
US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
JP4689969B2 (ja) * | 2003-04-05 | 2011-06-01 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Iva族およびvia族化合物の調製 |
JP4714422B2 (ja) * | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置 |
JP4954448B2 (ja) * | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
US7005160B2 (en) | 2003-04-24 | 2006-02-28 | Asm America, Inc. | Methods for depositing polycrystalline films with engineered grain structures |
KR101176668B1 (ko) * | 2004-06-10 | 2012-08-23 | 어플라이드 머티어리얼스, 인코포레이티드 | Uv 방사를 이용한 실리콘-함유 막들의 저온 에피택셜 성장 |
US7396743B2 (en) * | 2004-06-10 | 2008-07-08 | Singh Kaushal K | Low temperature epitaxial growth of silicon-containing films using UV radiation |
US7629270B2 (en) | 2004-08-27 | 2009-12-08 | Asm America, Inc. | Remote plasma activated nitridation |
US7966969B2 (en) | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
WO2006093817A2 (en) | 2005-02-28 | 2006-09-08 | Silicon Genesis Corporation | Substrate stiffness method and resulting devices |
US7629267B2 (en) | 2005-03-07 | 2009-12-08 | Asm International N.V. | High stress nitride film and method for formation thereof |
DE602005008375D1 (de) * | 2005-04-08 | 2008-09-04 | Advanced Mask Technology Ct Gmbh | Methode um eine Substratoberfläche von Kristallisationskeimen zu reinigen |
US7674687B2 (en) * | 2005-07-27 | 2010-03-09 | Silicon Genesis Corporation | Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process |
US7166520B1 (en) * | 2005-08-08 | 2007-01-23 | Silicon Genesis Corporation | Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process |
US20070029043A1 (en) * | 2005-08-08 | 2007-02-08 | Silicon Genesis Corporation | Pre-made cleavable substrate method and structure of fabricating devices using one or more films provided by a layer transfer process |
US7427554B2 (en) * | 2005-08-12 | 2008-09-23 | Silicon Genesis Corporation | Manufacturing strained silicon substrates using a backing material |
US7718518B2 (en) | 2005-12-16 | 2010-05-18 | Asm International N.V. | Low temperature doped silicon layer formation |
US7863157B2 (en) * | 2006-03-17 | 2011-01-04 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a layer transfer process |
US7598153B2 (en) * | 2006-03-31 | 2009-10-06 | Silicon Genesis Corporation | Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species |
CN101512721A (zh) | 2006-04-05 | 2009-08-19 | 硅源公司 | 利用层转移工艺制造太阳能电池的方法和结构 |
WO2007117583A2 (en) * | 2006-04-07 | 2007-10-18 | Applied Materials Inc. | Cluster tool for epitaxial film formation |
US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
US7789965B2 (en) * | 2006-09-19 | 2010-09-07 | Asm Japan K.K. | Method of cleaning UV irradiation chamber |
US20080289650A1 (en) * | 2007-05-24 | 2008-11-27 | Asm America, Inc. | Low-temperature cleaning of native oxide |
US20090206275A1 (en) * | 2007-10-03 | 2009-08-20 | Silcon Genesis Corporation | Accelerator particle beam apparatus and method for low contaminate processing |
US7790566B2 (en) * | 2008-03-19 | 2010-09-07 | International Business Machines Corporation | Semiconductor surface treatment for epitaxial growth |
US7833906B2 (en) | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
CN107393816A (zh) * | 2016-05-17 | 2017-11-24 | 上海新昇半导体科技有限公司 | 低温外延方法及设备 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3237338A1 (de) * | 1982-10-08 | 1984-04-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München | Ausgangsmaterial fuer epitaxiale silizium-solarzellen |
JPS60219737A (ja) * | 1984-04-16 | 1985-11-02 | Canon Inc | 堆積膜の形成法 |
JPS60219736A (ja) * | 1984-04-16 | 1985-11-02 | Canon Inc | 堆積膜の形成法 |
JPS60219728A (ja) * | 1984-04-16 | 1985-11-02 | Canon Inc | 堆積膜の形成法 |
JPS60219732A (ja) * | 1984-04-16 | 1985-11-02 | Canon Inc | 堆積膜の形成法 |
JPS60219729A (ja) * | 1984-04-16 | 1985-11-02 | Canon Inc | 堆積膜の形成法 |
US4728528A (en) * | 1985-02-18 | 1988-03-01 | Canon Kabushiki Kaisha | Process for forming deposited film |
JP2616760B2 (ja) * | 1985-04-08 | 1997-06-04 | 株式会社 半導体エネルギー研究所 | プラズマ気相反応装置 |
US4649059A (en) * | 1985-05-29 | 1987-03-10 | The United States Of America As Represented By The Secretary Of The Air Force | Photoionization technique for growth of metallic films |
US4605479A (en) * | 1985-06-24 | 1986-08-12 | Rca Corporation | In-situ cleaned ohmic contacts |
JPS6278191A (ja) * | 1985-09-30 | 1987-04-10 | Mitsui Toatsu Chem Inc | 単結晶薄膜の製造方法 |
US4800173A (en) * | 1986-02-20 | 1989-01-24 | Canon Kabushiki Kaisha | Process for preparing Si or Ge epitaxial film using fluorine oxidant |
JPH0639703B2 (ja) * | 1986-04-15 | 1994-05-25 | キヤノン株式会社 | 堆積膜形成法 |
JPS6330398A (ja) * | 1986-07-23 | 1988-02-09 | Toshiba Corp | エピタキシャル成長法 |
US4786352A (en) * | 1986-09-12 | 1988-11-22 | Benzing Technologies, Inc. | Apparatus for in-situ chamber cleaning |
US4843030A (en) * | 1987-11-30 | 1989-06-27 | Eaton Corporation | Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes |
-
1989
- 1989-03-17 JP JP1063872A patent/JPH02225399A/ja active Pending
- 1989-11-09 EP EP89311586A patent/EP0368651B1/de not_active Expired - Lifetime
- 1989-11-09 DE DE68918049T patent/DE68918049T2/de not_active Expired - Fee Related
- 1989-11-09 US US07/433,824 patent/US5120394A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0368651A3 (en) | 1990-11-07 |
EP0368651A2 (de) | 1990-05-16 |
DE68918049T2 (de) | 1995-01-05 |
US5120394A (en) | 1992-06-09 |
JPH02225399A (ja) | 1990-09-07 |
EP0368651B1 (de) | 1994-09-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |