DE68924563D1 - Verfahren und Vorrichtung zur Oberflächenanalyse. - Google Patents

Verfahren und Vorrichtung zur Oberflächenanalyse.

Info

Publication number
DE68924563D1
DE68924563D1 DE68924563T DE68924563T DE68924563D1 DE 68924563 D1 DE68924563 D1 DE 68924563D1 DE 68924563 T DE68924563 T DE 68924563T DE 68924563 T DE68924563 T DE 68924563T DE 68924563 D1 DE68924563 D1 DE 68924563D1
Authority
DE
Germany
Prior art keywords
surface analysis
analysis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68924563T
Other languages
English (en)
Other versions
DE68924563T2 (de
Inventor
Ken Ninomiya
Shigeru Nishimatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE68924563D1 publication Critical patent/DE68924563D1/de
Application granted granted Critical
Publication of DE68924563T2 publication Critical patent/DE68924563T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
    • G01N23/2273—Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
DE68924563T 1988-07-15 1989-07-11 Verfahren und Vorrichtung zur Oberflächenanalyse. Expired - Fee Related DE68924563T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63175023A JPH0225737A (ja) 1988-07-15 1988-07-15 表面分析方法および装置

Publications (2)

Publication Number Publication Date
DE68924563D1 true DE68924563D1 (de) 1995-11-23
DE68924563T2 DE68924563T2 (de) 1996-05-09

Family

ID=15988867

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68924563T Expired - Fee Related DE68924563T2 (de) 1988-07-15 1989-07-11 Verfahren und Vorrichtung zur Oberflächenanalyse.

Country Status (4)

Country Link
US (1) US5138158A (de)
EP (1) EP0350874B1 (de)
JP (1) JPH0225737A (de)
DE (1) DE68924563T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4998019A (en) * 1989-10-03 1991-03-05 Tencor Instruments Photoemission contaminant detector
JP2727787B2 (ja) * 1991-05-13 1998-03-18 三菱電機株式会社 Ｘ線露光装置
US5650616A (en) * 1992-04-14 1997-07-22 Olympus Optical Co., Ltd. Apparatus and method for analyzing surface
JP2764505B2 (ja) * 1992-07-09 1998-06-11 工業技術院長 電子分光方法とこれを用いた電子分光装置
US5569916A (en) * 1992-07-09 1996-10-29 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Electron spectroscopy apparatus
JP2600096B2 (ja) * 1992-10-06 1997-04-16 名古屋大学長 表面微量欠陥の定量方法
US5280176A (en) * 1992-11-06 1994-01-18 The United States Of America As Represented By The Secretary Of Commerce X-ray photoelectron emission spectrometry system
US5446282A (en) * 1993-04-05 1995-08-29 Nikon Corporation Scanning photoelectron microscope
GB9703024D0 (en) * 1997-02-14 1997-04-02 Council Cent Lab Res Councils Charged particle analysis
US6326617B1 (en) * 1997-09-04 2001-12-04 Synaptic Pharmaceutical Corporation Photoelectron spectroscopy apparatus
US6014423A (en) * 1998-02-19 2000-01-11 Osmic, Inc. Multiple corner Kirkpatrick-Baez beam conditioning optic assembly
US6184686B1 (en) * 1998-07-13 2001-02-06 Jordan Valley Applied Radiation Ltd. Contamination and residuals inspection system
US6455838B2 (en) 1998-10-06 2002-09-24 The Regents Of The University Of California High sensitivity deflection sensing device
JP2000346817A (ja) * 1999-06-07 2000-12-15 Nikon Corp 測定装置、照射装置および露光方法
JP4716272B2 (ja) * 2001-03-30 2011-07-06 日立オートモティブシステムズ株式会社 ディスクブレーキ
US6630677B1 (en) * 2001-08-29 2003-10-07 Advanced Micro Devices, Inc. Electrostatic lens having glassy graphite electrodes
DE10164112A1 (de) * 2001-12-24 2003-07-03 Inst Oberflaechenmodifizierung Verfahren zur Defektanalyse an reflektiven Optiken
JP4220170B2 (ja) * 2002-03-22 2009-02-04 浜松ホトニクス株式会社 Ｘ線像拡大装置
DE102005045308B4 (de) * 2005-09-16 2010-10-28 Deutsches Zentrum für Luft- und Raumfahrt e.V. Einrichtung und Verfahren zum Erkennen der Schädigung eines Targets
DE102006002461B8 (de) * 2006-01-18 2008-07-24 Max Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Spiegeloptik für nahfeldoptische Messungen
US20150026846A1 (en) 2013-07-16 2015-01-22 Oxford Instruments Afm Inc. Variable Density Scanning
US7941286B2 (en) * 2006-01-31 2011-05-10 Asylum Research Corporation Variable density scanning
DE102007033210B4 (de) * 2007-07-09 2010-05-27 Technische Universität Dresden Optisches Element zur Detektion von Röntgenstrahlung mittels Messung von Stromsignalen
US7952073B2 (en) * 2008-08-01 2011-05-31 Direct Electron, Lp Apparatus and method including a direct bombardment detector and a secondary detector for use in electron microscopy
US8249220B2 (en) * 2009-10-14 2012-08-21 Rigaku Innovative Technologies, Inc. Multiconfiguration X-ray optical system
CN111121651A (zh) 2018-10-31 2020-05-08 财团法人工业技术研究院 光学测量稳定性控制系统

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3567928A (en) * 1969-06-12 1971-03-02 Du Pont Fluorescent analytical radiation source for producing soft x-rays and secondary electrons
US3617741A (en) * 1969-09-02 1971-11-02 Hewlett Packard Co Electron spectroscopy system with a multiple electrode electron lens
GB1327572A (en) * 1971-03-23 1973-08-22 Ass Elect Ind Apparatus for use in charged particle spectroscopy
US3772522A (en) * 1972-02-17 1973-11-13 Hewlett Packard Co Crystal monochromator and method of fabricating a diffraction crystal employed therein
JPS5129437A (ja) * 1974-09-04 1976-03-12 Teikoku Hormone Mfg Co Ltd Fuaruneshirusakusanesuterunoseiho
US4382181A (en) * 1979-08-29 1983-05-03 Wang Chia Gee Detection of atoms using monochromatic X-rays
JPS58158842A (ja) * 1982-03-16 1983-09-21 Seiko Epson Corp Ｘ線発生方法
JPH0621778B2 (ja) * 1983-11-04 1994-03-23 株式会社東芝 マスク欠陥検査方法
JPS6188200A (ja) * 1984-10-05 1986-05-06 日本電子株式会社 Ｘ線照射系
JPS61102600A (ja) * 1984-10-25 1986-05-21 日本電子株式会社 Ｘ線レンズ系
JPS61248040A (ja) * 1985-04-25 1986-11-05 Konishiroku Photo Ind Co Ltd ハロゲン化銀黒白写真感光材料の処理方法
JPH0634108B2 (ja) * 1985-04-26 1994-05-02 株式会社日立製作所 全反射鏡装置
JPS6230944A (ja) * 1985-07-31 1987-02-09 Shimadzu Corp 走査形ｘ線光電子分析装置
US4680467A (en) * 1986-04-08 1987-07-14 Kevex Corporation Electron spectroscopy system for chemical analysis of electrically isolated specimens

Also Published As

Publication number Publication date
EP0350874A2 (de) 1990-01-17
EP0350874B1 (de) 1995-10-18
JPH0225737A (ja) 1990-01-29
DE68924563T2 (de) 1996-05-09
EP0350874A3 (de) 1991-01-23
US5138158A (en) 1992-08-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee