DE69018838D1 - Verfahren und Vorrichtung zur Oberflächenanalyse. - Google Patents

Verfahren und Vorrichtung zur Oberflächenanalyse.

Info

Publication number
DE69018838D1
DE69018838D1 DE69018838T DE69018838T DE69018838D1 DE 69018838 D1 DE69018838 D1 DE 69018838D1 DE 69018838 T DE69018838 T DE 69018838T DE 69018838 T DE69018838 T DE 69018838T DE 69018838 D1 DE69018838 D1 DE 69018838D1
Authority
DE
Germany
Prior art keywords
surface analysis
analysis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69018838T
Other languages
English (en)
Other versions
DE69018838T2 (de
Inventor
Ken Ninomiya
Keizo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69018838D1 publication Critical patent/DE69018838D1/de
Application granted granted Critical
Publication of DE69018838T2 publication Critical patent/DE69018838T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N2021/178—Methods for obtaining spatial resolution of the property being measured
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1702—Systems in which incident light is modified in accordance with the properties of the material investigated with opto-acoustic detection, e.g. for gases or analysing solids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/103—Scanning by mechanical motion of stage
    • G01N2201/1035—3D motion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/30—Accessories, mechanical or electrical features
    • G01N2223/33—Accessories, mechanical or electrical features scanning, i.e. relative motion for measurement of successive object-parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/30—Accessories, mechanical or electrical features
    • G01N2223/345—Accessories, mechanical or electrical features mathematical transformations on beams or signals, e.g. Fourier
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2209—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using wavelength dispersive spectroscopy [WDS]
DE69018838T 1989-01-06 1990-01-02 Verfahren und Vorrichtung zur Oberflächenanalyse. Expired - Fee Related DE69018838T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP64000303A JP2842879B2 (ja) 1989-01-06 1989-01-06 表面分析方法および装置

Publications (2)

Publication Number Publication Date
DE69018838D1 true DE69018838D1 (de) 1995-06-01
DE69018838T2 DE69018838T2 (de) 1995-08-24

Family

ID=11470135

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69018838T Expired - Fee Related DE69018838T2 (de) 1989-01-06 1990-01-02 Verfahren und Vorrichtung zur Oberflächenanalyse.

Country Status (4)

Country Link
US (1) US5055679A (de)
EP (1) EP0377446B1 (de)
JP (1) JP2842879B2 (de)
DE (1) DE69018838T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2842879B2 (ja) 1989-01-06 1999-01-06 株式会社日立製作所 表面分析方法および装置

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US5233191A (en) * 1990-04-02 1993-08-03 Hitachi, Ltd. Method and apparatus of inspecting foreign matters during mass production start-up and mass production line in semiconductor production process
JPH07119716B2 (ja) * 1990-04-19 1995-12-20 株式会社島津製作所 表面分析装置
US5153434A (en) * 1990-05-18 1992-10-06 Hitachi, Ltd. Electron microscope and method for observing microscopic image
JP2730270B2 (ja) * 1990-06-05 1998-03-25 富士電機株式会社 磁気記録媒体およびその潤滑剤層の潤滑剤配向度評価法
US5394741A (en) * 1990-07-11 1995-03-07 Olympus Optical Co., Ltd. Atomic probe microscope
US5157251A (en) * 1991-03-13 1992-10-20 Park Scientific Instruments Scanning force microscope having aligning and adjusting means
US5463459A (en) 1991-04-02 1995-10-31 Hitachi, Ltd. Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process
GB2258083A (en) * 1991-07-25 1993-01-27 Kratos Analytical Ltd Sample analysis apparatus and method.
US5460034A (en) * 1992-07-21 1995-10-24 The United States Of America As Represented By The Secretary Of The Air Force Method for measuring and analyzing surface roughness on semiconductor laser etched facets
US5517128A (en) * 1993-01-05 1996-05-14 Sentech Instruments Gmbh Method and arrangement for charge carrier profiling in semiconductor structure by means of AFM scanning
US5588428A (en) * 1993-04-28 1996-12-31 The University Of Akron Method and apparatus for non-invasive volume and texture analysis
US5874668A (en) * 1995-10-24 1999-02-23 Arch Development Corporation Atomic force microscope for biological specimens
US5798524A (en) * 1996-08-07 1998-08-25 Gatan, Inc. Automated adjustment of an energy filtering transmission electron microscope
US6184524B1 (en) 1996-08-07 2001-02-06 Gatan, Inc. Automated set up of an energy filtering transmission electron microscope
JP3424512B2 (ja) 1997-07-18 2003-07-07 株式会社日立製作所 粒子ビーム検査装置および検査方法並びに粒子ビーム応用装置
US5847834A (en) * 1997-09-11 1998-12-08 Webview, Inc. Expandable, continuous illumination source for a web inspection assembly and method
US6236429B1 (en) 1998-01-23 2001-05-22 Webview, Inc. Visualization system and method for a web inspection assembly
US6366681B1 (en) * 1999-04-07 2002-04-02 Space Imaging, Lp Analysis of multi-spectral data for extraction of chlorophyll content
US6787773B1 (en) 2000-06-07 2004-09-07 Kla-Tencor Corporation Film thickness measurement using electron-beam induced x-ray microanalysis
US6664541B2 (en) * 2001-10-01 2003-12-16 Kla Tencor Technologies Corporation Methods and apparatus for defect localization
US6801596B2 (en) 2001-10-01 2004-10-05 Kla-Tencor Technologies Corporation Methods and apparatus for void characterization
US6810105B2 (en) * 2002-01-25 2004-10-26 Kla-Tencor Technologies Corporation Methods and apparatus for dishing and erosion characterization
WO2004034044A1 (en) * 2002-10-08 2004-04-22 Applied Materials Israel, Ltd. Methods and systems for process monitoring using x-ray emission
US7365320B2 (en) 2002-10-08 2008-04-29 Applied Materials Israel, Ltd. Methods and systems for process monitoring using x-ray emission
JPWO2004036639A1 (ja) * 2002-10-18 2006-02-16 株式会社日立製作所 エッチング装置及びそれを用いた半導体装置の製造方法
JP2004205384A (ja) * 2002-12-26 2004-07-22 Hitachi Zosen Corp Ｘ線検査装置
JP5025236B2 (ja) * 2006-11-29 2012-09-12 キヤノン株式会社 露光装置及び方法、並びに、デバイス製造方法
JP5963453B2 (ja) 2011-03-15 2016-08-03 株式会社荏原製作所 検査装置
US9488630B2 (en) 2013-11-08 2016-11-08 Dow Agrosciences Llc Integrated remote aerial sensing system
JP6228858B2 (ja) * 2014-02-06 2017-11-08 日本電子株式会社 粒子解析装置、およびプログラム

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US3814943A (en) * 1969-08-26 1974-06-04 Sira Institute Method of and apparatus for analysing patterns and inspecting objects
US3971939A (en) * 1975-08-19 1976-07-27 The United States Of America As Represented By The Secretary Of The Navy Unitary lasser/IR seeker
DE3112758A1 (de) * 1981-03-31 1982-10-07 Philips Patentverwaltung Gmbh, 2000 Hamburg "vorrichtung zur pruefung von koerpern mit periodischen strukturen"
US4635197A (en) * 1983-12-29 1987-01-06 Shell Oil Company High resolution tomographic imaging method
US4679946A (en) * 1984-05-21 1987-07-14 Therma-Wave, Inc. Evaluating both thickness and compositional variables in a thin film sample
DD226380A1 (de) * 1984-07-23 1985-08-21 Univ Halle Wittenberg Verfahren zur lagebestimmung von versetzungen in halbleitern
EP0196531B1 (de) * 1985-03-28 1991-01-16 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Verfahren zur indirekten Bestimmung der Intensitätsverteilung der in einem Korpuskularstrahl-Messgerät erzeugten Korpuskularstrahlpulse
JPS61292600A (ja) * 1985-06-20 1986-12-23 日本電子株式会社 Ｘ線光学系
US4680467A (en) * 1986-04-08 1987-07-14 Kevex Corporation Electron spectroscopy system for chemical analysis of electrically isolated specimens
JPS62265555A (ja) * 1986-05-13 1987-11-18 Toshiba Corp 局所構造解析装置
GB8612099D0 (en) * 1986-05-19 1986-06-25 Vg Instr Group Spectrometer
JP2842879B2 (ja) 1989-01-06 1999-01-06 株式会社日立製作所 表面分析方法および装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2842879B2 (ja) 1989-01-06 1999-01-06 株式会社日立製作所 表面分析方法および装置

Also Published As

Publication number Publication date
JP2842879B2 (ja) 1999-01-06
EP0377446A3 (en) 1990-09-19
JPH02181639A (ja) 1990-07-16
EP0377446A2 (de) 1990-07-11
EP0377446B1 (de) 1995-04-26
US5055679A (en) 1991-10-08
DE69018838T2 (de) 1995-08-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee