FR2968678B1 - Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés - Google Patents

Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés

Info

Publication number
FR2968678B1
FR2968678B1 FR1060242A FR1060242A FR2968678B1 FR 2968678 B1 FR2968678 B1 FR 2968678B1 FR 1060242 A FR1060242 A FR 1060242A FR 1060242 A FR1060242 A FR 1060242A FR 2968678 B1 FR2968678 B1 FR 2968678B1
Authority
FR
France
Prior art keywords
methods
group iii
iii nitride
structures formed
formed therefrom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1060242A
Other languages
English (en)
Other versions
FR2968678A1 (fr
Inventor
Chantal Arena
Jr Ronald Thomas Bertram
Ed Lindow
Subhash Mahajan
Fanyu Meng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arizona Board Of Regents For And On Behalf Of Us
Soitec SA
Original Assignee
Soitec SA
University of Arizona
Arizona State University ASU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA, University of Arizona, Arizona State University ASU filed Critical Soitec SA
Priority to FR1060242A priority Critical patent/FR2968678B1/fr
Priority to TW100134215A priority patent/TWI517213B/zh
Priority to JP2013540344A priority patent/JP2014500219A/ja
Priority to KR1020137014538A priority patent/KR20130141575A/ko
Priority to US13/988,996 priority patent/US9412580B2/en
Priority to PCT/EP2011/070794 priority patent/WO2012069530A1/fr
Priority to DE112011103871.2T priority patent/DE112011103871B4/de
Priority to CN201180056001.2A priority patent/CN103237929B/zh
Publication of FR2968678A1 publication Critical patent/FR2968678A1/fr
Application granted granted Critical
Publication of FR2968678B1 publication Critical patent/FR2968678B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
FR1060242A 2010-11-23 2010-12-08 Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés Active FR2968678B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1060242A FR2968678B1 (fr) 2010-12-08 2010-12-08 Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés
TW100134215A TWI517213B (zh) 2010-11-23 2011-09-22 形成第三族氮化物材料之方法及由該方法所形成之結構
KR1020137014538A KR20130141575A (ko) 2010-11-23 2011-11-23 Iii족-질화물을 형성하는 방법 및 이와 같은 방법에 의해 형성되는 구조
US13/988,996 US9412580B2 (en) 2010-11-23 2011-11-23 Methods for forming group III-nitride materials and structures formed by such methods
JP2013540344A JP2014500219A (ja) 2010-11-23 2011-11-23 Ｉｉｉ族窒化物材料を形成するための方法およびそうした方法によって形成される構造物
PCT/EP2011/070794 WO2012069530A1 (fr) 2010-11-23 2011-11-23 Procédés pour former des matières de nitrure du groupe iii, et structures formées par de tels procédés
DE112011103871.2T DE112011103871B4 (de) 2010-11-23 2011-11-23 Verfahren zum ausbilden von galliumnitrid-material und struktur, die durch ein derartiges verfahren ausgebildet wird
CN201180056001.2A CN103237929B (zh) 2010-11-23 2011-11-23 用于形成iii族氮化物材料的方法以及通过该方法形成的结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1060242A FR2968678B1 (fr) 2010-12-08 2010-12-08 Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés

Publications (2)

Publication Number Publication Date
FR2968678A1 FR2968678A1 (fr) 2012-06-15
FR2968678B1 true FR2968678B1 (fr) 2015-11-20

Family

ID=44153261

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1060242A Active FR2968678B1 (fr) 2010-11-23 2010-12-08 Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés

Country Status (8)

Country Link
US (1) US9412580B2 (fr)
JP (1) JP2014500219A (fr)
KR (1) KR20130141575A (fr)
CN (1) CN103237929B (fr)
DE (1) DE112011103871B4 (fr)
FR (1) FR2968678B1 (fr)
TW (1) TWI517213B (fr)
WO (1) WO2012069530A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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JP2014222691A (ja) * 2013-05-13 2014-11-27 日立金属株式会社 窒化物半導体テンプレートおよびその製造方法、並びに窒化物半導体発光素子
JP6375890B2 (ja) 2014-11-18 2018-08-22 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
JP6851017B2 (ja) * 2016-05-18 2021-03-31 パナソニックＩｐマネジメント株式会社 デバイス及びその製造方法
WO2019123954A1 (fr) * 2017-12-21 2019-06-27 パナソニックＩｐマネジメント株式会社 Structure de film composite à base de nitrure et procédé pour sa fabrication
JP7157953B2 (ja) * 2017-12-21 2022-10-21 パナソニックＩｐマネジメント株式会社 窒化物系薄膜複合構造体及びその製造方法
TWI698915B (zh) * 2019-01-18 2020-07-11 國立交通大學 雲母片上異質磊晶半導體材料之製程方法
US20220344151A1 (en) * 2021-04-23 2022-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor Device and Method of Manufacture

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Also Published As

Publication number Publication date
US20130234157A1 (en) 2013-09-12
FR2968678A1 (fr) 2012-06-15
DE112011103871T5 (de) 2013-08-22
JP2014500219A (ja) 2014-01-09
TW201222633A (en) 2012-06-01
US9412580B2 (en) 2016-08-09
CN103237929B (zh) 2017-07-11
DE112011103871B4 (de) 2024-02-08
KR20130141575A (ko) 2013-12-26
TWI517213B (zh) 2016-01-11
WO2012069530A1 (fr) 2012-05-31
CN103237929A (zh) 2013-08-07

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