TW201614083A - Method for forming nitride semiconductor layer and method for manufacturing semiconductor device - Google Patents

Method for forming nitride semiconductor layer and method for manufacturing semiconductor device

Info

Publication number
TW201614083A
TW201614083A TW104122947A TW104122947A TW201614083A TW 201614083 A TW201614083 A TW 201614083A TW 104122947 A TW104122947 A TW 104122947A TW 104122947 A TW104122947 A TW 104122947A TW 201614083 A TW201614083 A TW 201614083A
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
nitride semiconductor
semiconductor device
forming nitride
buffer layer
Prior art date
Application number
TW104122947A
Other languages
Chinese (zh)
Other versions
TWI567214B (en
Inventor
Yoshiaki Daigo
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of TW201614083A publication Critical patent/TW201614083A/en
Application granted granted Critical
Publication of TWI567214B publication Critical patent/TWI567214B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention has: a step for epitaxially growing a buffer layer on a substrate, said buffer layer being formed of AlN or AlGaN; and a step for epitaxially growing, on the buffer layer, a nitride semiconductor layer containing at least GaN by means of a sputtering method wherein a nitride target containing Ga and GaN is used, and the flow rate of a nitrogen-containing reactive gas is set less than 20 % of the flow rate of the whole process gas.
TW104122947A 2014-07-18 2015-07-15 A method for forming a nitride semiconductor layer, and a method of manufacturing the semiconductor device TWI567214B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014147964 2014-07-18

Publications (2)

Publication Number Publication Date
TW201614083A true TW201614083A (en) 2016-04-16
TWI567214B TWI567214B (en) 2017-01-21

Family

ID=55078092

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104122947A TWI567214B (en) 2014-07-18 2015-07-15 A method for forming a nitride semiconductor layer, and a method of manufacturing the semiconductor device

Country Status (4)

Country Link
JP (1) JP6001194B2 (en)
KR (1) KR101687595B1 (en)
TW (1) TWI567214B (en)
WO (1) WO2016009577A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI824304B (en) * 2020-09-29 2023-12-01 日商芝浦機械電子裝置股份有限公司 Film forming device and film forming method

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3998370A1 (en) 2015-03-30 2022-05-18 Tosoh Corporation Gallium nitride-based film and method for manufacturing same
JP6588349B2 (en) * 2016-01-26 2019-10-09 ヤマト科学株式会社 Containment system
US10170303B2 (en) 2016-05-26 2019-01-01 Robbie J. Jorgenson Group IIIA nitride growth system and method
TWI825187B (en) * 2018-10-09 2023-12-11 日商東京威力科創股份有限公司 Method for forming nitride semiconductor film
CN115335548A (en) * 2020-03-30 2022-11-11 东曹株式会社 Laminated film, structure comprising laminated film, semiconductor element, electronic device, and method for producing laminated film
JPWO2022176422A1 (en) * 2021-02-19 2022-08-25
WO2023218840A1 (en) * 2022-05-10 2023-11-16 株式会社ジャパンディスプレイ Film formation device and film formation method for gallium nitride film
WO2024084664A1 (en) * 2022-10-20 2024-04-25 京セラ株式会社 Semiconductor substrate, template substrate, and method and device for producing template substrate

Family Cites Families (12)

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JP4613373B2 (en) * 1999-07-19 2011-01-19 ソニー株式会社 Method for forming group III nitride compound semiconductor thin film and method for manufacturing semiconductor element
JP4131618B2 (en) * 2000-05-22 2008-08-13 日本碍子株式会社 Manufacturing method of substrate for photonic device
US6495894B2 (en) * 2000-05-22 2002-12-17 Ngk Insulators, Ltd. Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
JP4974635B2 (en) 2006-10-06 2012-07-11 昭和電工株式会社 Film forming method of group III nitride compound semiconductor multilayer structure
JP2008153603A (en) 2006-12-20 2008-07-03 Showa Denko Kk Method of manufacturing group iii nitride compound semiconductor light-emitting element, group iii nitride compound semiconductor light-emitting element, and lamp
WO2011136016A1 (en) * 2010-04-30 2011-11-03 キヤノンアネルバ株式会社 Epitaxial film formation method, vacuum treatment device, method for producing semiconductor light-emitting element, semiconductor light-emitting element, lighting device
CN105347800B (en) 2010-12-20 2018-09-14 东曹株式会社 Gallium nitride molding and its manufacturing method and gallium nitride sputtering target material
JP2012144805A (en) * 2010-12-21 2012-08-02 Tosoh Corp Gallium nitride molded article and method for producing the same
WO2012090422A1 (en) * 2010-12-27 2012-07-05 キヤノンアネルバ株式会社 Epitaxial film-forming method, sputtering apparatus, method for manufacturing semiconductor light-emitting element, semiconductor light-emitting element, and illumination device
JP5718709B2 (en) 2011-04-12 2015-05-13 株式会社アルバック Semiconductor layer forming apparatus and semiconductor layer manufacturing method
JP2013125851A (en) 2011-12-14 2013-06-24 Ulvac Japan Ltd Film forming apparatus and film formation method
JP5974831B2 (en) * 2012-11-02 2016-08-23 東ソー株式会社 Gallium nitride target

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI824304B (en) * 2020-09-29 2023-12-01 日商芝浦機械電子裝置股份有限公司 Film forming device and film forming method

Also Published As

Publication number Publication date
JP6001194B2 (en) 2016-10-05
TWI567214B (en) 2017-01-21
WO2016009577A1 (en) 2016-01-21
KR101687595B1 (en) 2016-12-19
KR20160020401A (en) 2016-02-23
JPWO2016009577A1 (en) 2017-04-27

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