IN2015DN02030A - - Google Patents
Info
- Publication number
- IN2015DN02030A IN2015DN02030A IN2030DEN2015A IN2015DN02030A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A IN 2030DEN2015 A IN2030DEN2015 A IN 2030DEN2015A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A
- Authority
- IN
- India
- Prior art keywords
- wafer
- discloses
- group iii
- iii nitride
- present
- Prior art date
Links
- 235000012431 wafers Nutrition 0.000 abstract 5
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000010297 mechanical methods and process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
The present invention discloses a group III nitride wafer such as GaN AlN InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261694119P | 2012-08-28 | 2012-08-28 | |
PCT/US2013/032006 WO2014035481A1 (en) | 2012-08-28 | 2013-03-15 | Group iii nitride wafer and its production method |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2015DN02030A true IN2015DN02030A (en) | 2015-08-14 |
Family
ID=48050922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN2030DEN2015 IN2015DN02030A (en) | 2012-08-28 | 2013-03-15 |
Country Status (8)
Country | Link |
---|---|
US (2) | US8921231B2 (en) |
EP (1) | EP2890537A1 (en) |
JP (1) | JP6144347B2 (en) |
KR (1) | KR101895035B1 (en) |
CN (1) | CN104781057B (en) |
IN (1) | IN2015DN02030A (en) |
TW (1) | TWI621163B (en) |
WO (1) | WO2014035481A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8921231B2 (en) | 2006-04-07 | 2014-12-30 | Sixpoint Materials, Inc. | Group III nitride wafer and its production method |
US9790617B2 (en) * | 2006-04-07 | 2017-10-17 | Sixpoint Materials, Inc. | Group III nitride bulk crystals and their fabrication method |
US9518340B2 (en) | 2006-04-07 | 2016-12-13 | Sixpoint Materials, Inc. | Method of growing group III nitride crystals |
US9202872B2 (en) | 2006-04-07 | 2015-12-01 | Sixpoint Materials, Inc. | Method of growing group III nitride crystals |
WO2014051684A1 (en) | 2012-09-26 | 2014-04-03 | Sixpoint Materials, Inc. | Group iii nitride wafers and fabrication method and testing method |
CN105917035B (en) | 2014-01-17 | 2019-06-18 | 三菱化学株式会社 | GaN substrate, the manufacturing method of GaN substrate, the manufacturing method of the manufacturing method of GaN crystallization and semiconductor devices |
JP6292080B2 (en) * | 2014-08-21 | 2018-03-14 | 三菱ケミカル株式会社 | Nonpolar or semipolar GaN substrate |
US10134883B2 (en) | 2016-12-23 | 2018-11-20 | Sixpoint Materials, Inc. | Electronic device using group III nitride semiconductor and its fabrication method |
CN106783579B (en) * | 2016-12-29 | 2019-12-13 | 苏州纳维科技有限公司 | Group III nitride substrate and method for producing same |
JP2020535092A (en) | 2017-09-26 | 2020-12-03 | シックスポイント マテリアルズ, インコーポレイテッド | Seed crystal and manufacturing method for the growth of gallium nitride bulk crystals in supercritical ammonia |
CN108074834A (en) * | 2018-01-08 | 2018-05-25 | 中国电子科技集团公司第四十六研究所 | A kind of polar surface determination method for being used for the special-shaped chip with polarity |
KR102126186B1 (en) * | 2018-06-27 | 2020-06-24 | 경희대학교 산학협력단 | Method for manufacturing a gallium nitride substrate |
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US5984998A (en) | 1997-11-14 | 1999-11-16 | American Iron And Steel Institute | Method and apparatus for off-gas composition sensing |
EP1307321A2 (en) * | 2000-08-07 | 2003-05-07 | MEMC Electronic Materials, Inc. | Method for processing a semiconductor wafer using double-side polishing |
US7072034B2 (en) * | 2001-06-08 | 2006-07-04 | Kla-Tencor Corporation | Systems and methods for inspection of specimen surfaces |
RU2296189C2 (en) | 2001-06-06 | 2007-03-27 | АММОНО Сп.з о.о. | Method and apparatus for producing three-dimensional monocrystalline gallium-containing nitride (variants) |
US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
KR100904501B1 (en) | 2001-10-26 | 2009-06-25 | 암모노 에스피. 제트오. 오. | Substrate for epitaxy |
US7638346B2 (en) | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US7022992B2 (en) | 2002-01-17 | 2006-04-04 | American Air Liquide, Inc. | Method and apparatus for real-time monitoring of furnace flue gases |
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US7098487B2 (en) | 2002-12-27 | 2006-08-29 | General Electric Company | Gallium nitride crystal and method of making same |
US7323256B2 (en) | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
KR100541111B1 (en) | 2004-06-25 | 2006-01-11 | 삼성전기주식회사 | Method of producing multi-wavelength semiconductor laser device |
DE102004039076A1 (en) | 2004-08-12 | 2006-02-23 | Sms Demag Ag | Non-contact exhaust gas measurement by means of FTIR spectroscopy on metallurgical aggregates |
US20060124956A1 (en) | 2004-12-13 | 2006-06-15 | Hui Peng | Quasi group III-nitride substrates and methods of mass production of the same |
JP4849296B2 (en) * | 2005-04-11 | 2012-01-11 | 日立電線株式会社 | GaN substrate |
JP4792802B2 (en) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Surface treatment method of group III nitride crystal |
WO2007008198A1 (en) | 2005-07-08 | 2007-01-18 | The Regents Of The University Of California | Method for growing group iii-nitride crystals in supercritical ammonia using an autoclave |
JP4696886B2 (en) * | 2005-12-08 | 2011-06-08 | 日立電線株式会社 | Method for manufacturing self-supporting gallium nitride single crystal substrate and method for manufacturing nitride semiconductor device |
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-
2013
- 2013-03-15 US US13/835,636 patent/US8921231B2/en active Active
- 2013-03-15 KR KR1020157007789A patent/KR101895035B1/en active IP Right Grant
- 2013-03-15 IN IN2030DEN2015 patent/IN2015DN02030A/en unknown
- 2013-03-15 CN CN201380048864.4A patent/CN104781057B/en active Active
- 2013-03-15 WO PCT/US2013/032006 patent/WO2014035481A1/en active Application Filing
- 2013-03-15 EP EP13715053.8A patent/EP2890537A1/en not_active Withdrawn
- 2013-03-15 US US13/834,871 patent/US9543393B2/en active Active
- 2013-03-15 JP JP2015529788A patent/JP6144347B2/en active Active
- 2013-08-27 TW TW102130676A patent/TWI621163B/en active
Also Published As
Publication number | Publication date |
---|---|
EP2890537A1 (en) | 2015-07-08 |
JP2015529626A (en) | 2015-10-08 |
US8921231B2 (en) | 2014-12-30 |
US9543393B2 (en) | 2017-01-10 |
JP6144347B2 (en) | 2017-06-07 |
KR20150088993A (en) | 2015-08-04 |
WO2014035481A1 (en) | 2014-03-06 |
CN104781057A (en) | 2015-07-15 |
TWI621163B (en) | 2018-04-11 |
US20140061662A1 (en) | 2014-03-06 |
KR101895035B1 (en) | 2018-09-04 |
US20140065796A1 (en) | 2014-03-06 |
CN104781057B (en) | 2018-04-24 |
TW201413807A (en) | 2014-04-01 |
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