EA201390802A1 - Эпитаксиальное выращивание нанопроволоки на графитовой подложке - Google Patents

Эпитаксиальное выращивание нанопроволоки на графитовой подложке

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Publication number
EA201390802A1
EA201390802A1 EA201390802A EA201390802A EA201390802A1 EA 201390802 A1 EA201390802 A1 EA 201390802A1 EA 201390802 A EA201390802 A EA 201390802A EA 201390802 A EA201390802 A EA 201390802A EA 201390802 A1 EA201390802 A1 EA 201390802A1
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Eurasian Patent Office
Prior art keywords
epitaxial
cultivation
graphite substrate
nano wires
nanowire
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EA201390802A
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English (en)
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EA026823B1 (ru
Inventor
Хельг Веман
Бьерн-Ове Фимланд
Дон Чуль Ким
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Норвегиан Юниверсити Оф Сайенс Энд Текнолоджи (Энтиэню)
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Publication of EA201390802A1 publication Critical patent/EA201390802A1/ru
Publication of EA026823B1 publication Critical patent/EA026823B1/ru

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02617—Deposition types
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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    • H01L29/0669—Nanowires or nanotubes
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Composite Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Luminescent Compositions (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Композиция материала, включающего по меньшей мере одну нанопроволоку на графитовой подложке, причем указанная по меньшей мере одна нанопроволока выращена путем эпитаксии на указанной подложке, где указанная нанопроволока включает по меньшей мере одно соединение групп III-V или по меньшей мере одно соединение групп II-VI или включает по меньшей мере один элемент группы IV, не являющийся углеродом.
EA201390802A 2010-12-13 2011-12-13 Способ изготовления полупроводниковой наноструктуры EA026823B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1021112.6A GB201021112D0 (en) 2010-12-13 2010-12-13 Nanowires
PCT/EP2011/072612 WO2012080252A1 (en) 2010-12-13 2011-12-13 Nanowire epitaxy on a graphitic substrate

Publications (2)

Publication Number Publication Date
EA201390802A1 true EA201390802A1 (ru) 2013-12-30
EA026823B1 EA026823B1 (ru) 2017-05-31

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EA201390802A EA026823B1 (ru) 2010-12-13 2011-12-13 Способ изготовления полупроводниковой наноструктуры

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US (2) US9966257B2 (ru)
EP (1) EP2652771B1 (ru)
JP (1) JP6006729B2 (ru)
KR (1) KR101931394B1 (ru)
CN (1) CN103477418B (ru)
AU (2) AU2011344238B2 (ru)
BR (1) BR112013014613A2 (ru)
CA (1) CA2820904C (ru)
DK (1) DK2652771T3 (ru)
EA (1) EA026823B1 (ru)
ES (1) ES2777951T3 (ru)
GB (1) GB201021112D0 (ru)
MY (1) MY164032A (ru)
SG (1) SG191131A1 (ru)
WO (1) WO2012080252A1 (ru)

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