EA201890238A1 - Способ выращивания нанопроволок или нанопирамидок на графитовых подложках - Google Patents

Способ выращивания нанопроволок или нанопирамидок на графитовых подложках

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Publication number
EA201890238A1
EA201890238A1 EA201890238A EA201890238A EA201890238A1 EA 201890238 A1 EA201890238 A1 EA 201890238A1 EA 201890238 A EA201890238 A EA 201890238A EA 201890238 A EA201890238 A EA 201890238A EA 201890238 A1 EA201890238 A1 EA 201890238A1
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EA
Eurasian Patent Office
Prior art keywords
graphite substrate
nanopyramides
nanoproxes
cultivation
nanowires
Prior art date
Application number
EA201890238A
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English (en)
Inventor
Дон-Чуль Ким
Ида Мари Хёиос
Мазид Мунши
Бъёрн Ове Фимланд
Хельге Веман
Диндин Рен
Даса Дирадж
Original Assignee
Крайонано Ас
НОРВИДЖЕН ЮНИВЕРСИТИ ОФ САЙЕНС ЭНД ТЕКНОЛОДЖИ (ЭнТиЭнЮ)
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Priority claimed from GBGB1513567.6A external-priority patent/GB201513567D0/en
Priority claimed from GBGB1600162.0A external-priority patent/GB201600162D0/en
Application filed by Крайонано Ас, НОРВИДЖЕН ЮНИВЕРСИТИ ОФ САЙЕНС ЭНД ТЕКНОЛОДЖИ (ЭнТиЭнЮ) filed Critical Крайонано Ас
Publication of EA201890238A1 publication Critical patent/EA201890238A1/ru

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02436—Intermediate layers between substrates and deposited layers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

Способ выращивания нанопроволок или нанопирамидок, включающий (I) предоставление графитовой подложки и осаждение AlGaN, InGaN, AlN или AlGa(In)N на указанную графитовую подложку при повышенной температуре с образованием буферного слоя или островков образования зародышей наномасштаба из указанных соединений, (II) выращивание множества полупроводниковых нанопроволок или нанопирамидок группы III-V, предпочтительно III-нитридных нанопроволок или нанопирамидок, на указанном буферном слое или на островках образования зародышей на графитовой подложке, предпочтительно посредством ГЭМПО или МПЭ.
EA201890238A 2015-07-31 2016-08-01 Способ выращивания нанопроволок или нанопирамидок на графитовых подложках EA201890238A1 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1513567.6A GB201513567D0 (en) 2015-07-31 2015-07-31 Processes for growing nanowires
GBGB1600162.0A GB201600162D0 (en) 2016-01-05 2016-01-05 Processes for growing nanowires or nanopyramids
PCT/EP2016/068350 WO2017021380A1 (en) 2015-07-31 2016-08-01 Process for growing nanowires or nanopyramids on graphitic substrates

Publications (1)

Publication Number Publication Date
EA201890238A1 true EA201890238A1 (ru) 2018-08-31

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EA201890238A EA201890238A1 (ru) 2015-07-31 2016-08-01 Способ выращивания нанопроволок или нанопирамидок на графитовых подложках

Country Status (11)

Country Link
US (2) US10714337B2 (ru)
EP (2) EP3329509A1 (ru)
JP (1) JP7009358B2 (ru)
KR (1) KR102698244B1 (ru)
CN (1) CN108156828A (ru)
AU (2) AU2016302692B2 (ru)
BR (1) BR112018001815A2 (ru)
CA (1) CA2993884A1 (ru)
EA (1) EA201890238A1 (ru)
TW (1) TWI711072B (ru)
WO (1) WO2017021380A1 (ru)

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