JP7154133B2 - 異なる色のledを含むモノリシックマルチカラー直視型ディスプレイおよびそれを製造する方法 - Google Patents
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Description
本願は、2016年5月4日に出願された米国特許仮出願第62/331,859号および2017年2月28日に出願された米国特許仮出願第62/464,504号の優先権の利益を享受する。それらの出願の開示全体は、参照により本明細書に組み入れられる。
分野
平面のいずれかであってもよく、「c平面」は{0001}平面を表し、「m平面」は
平面のいずれかを表す。成長レートは、そうでないと指定されない場合、成長面に垂直な方向に沿ったレイヤ成長レートを意味する。
Claims (9)
- 複数の青色、緑色および赤色発光ダイオード(LED)であって、前記複数の青色、緑色および赤色LEDのそれぞれが第1導電タイプの少なくともひとつの半導体領域と第2導電タイプの少なくともひとつの半導体領域とを含む、複数の青色、緑色および赤色発光ダイオード(LED)を備える発光デバイスであって、
前記青色LEDのそれぞれがさらに、前記第1導電タイプの前記少なくともひとつの半導体領域と前記第2導電タイプの少なくともひとつの半導体領域との間に設けられた青色アクティブ領域を含み、前記青色アクティブ領域が、バルクのまたは準バルクのInxGa1-xNレイヤまたはGaNあるいはAlGaNバリアレイヤとInxGa1-xNウェルレイヤとを有するひとつ以上の量子井戸を含み、ここでxは0と1との間の実数であり、
前記緑色LEDのそれぞれがさらに、前記青色アクティブ領域と、前記第1導電タイプの前記少なくともひとつの半導体領域と前記第2導電タイプの少なくともひとつの半導体領域との間に設けられた緑色アクティブ領域と、を含み、前記緑色アクティブ領域が、バルクのまたは準バルクのInyGa1-yNレイヤまたはGaNあるいはAlGaNバリアレイヤとInyGa1-yNウェルレイヤとを有するひとつ以上の量子井戸を含み、ここでyは0と1との間の実数であり、
前記赤色LEDのそれぞれがさらに、前記青色アクティブ領域と、前記緑色アクティブ領域と、前記第1導電タイプの前記少なくともひとつの半導体領域と前記第2導電タイプの少なくともひとつの半導体領域との間に設けられた赤色アクティブ領域と、を含み、前記赤色アクティブ領域が、アルミニウムガリウムヒ化物、アルミニウムガリウムインジウムリン化物、ガリウムヒ素リン化物、ガリウムリン化物、InzGa1-zNここで0.4≦z≦0.5でxおよびyは0.3以下、InwGa1-wP1-u-vAsuNvという化学式を有する赤色発光希薄III族窒化物半導体ここでwおよびuは0と1との間の実数であり0.01≦v≦0.1、およびユーロピウムドープガリウム窒化物、から選択される少なくともひとつのバルク、準バルク、または量子井戸レイヤを含み、前記赤色アクティブ領域が、前記緑色アクティブ領域に接している発光デバイス。 - 前記緑色アクティブ領域および前記赤色アクティブ領域がそれぞれ1から100nmの厚さを有し、
前記デバイスが、各ピクセルに前記青色LEDと前記緑色LEDと前記赤色LEDとを含む直視型マルチカラー発光デバイスを含む請求項1に記載のデバイス。 - 前記第1導電タイプの前記少なくともひとつの半導体領域が前記第1導電タイプの複数の半導体ナノワイヤを含み、
前記青色、緑色および赤色アクティブ領域が前記複数の半導体ナノワイヤを覆って設けられるシェルを含み、
前記第2導電タイプの前記少なくともひとつの半導体領域が、前記青色、緑色および赤色アクティブ領域および前記複数の半導体ナノワイヤの周りに設けられた前記第2導電タイプのアウタシェルを含む請求項1に記載のデバイス。 - 前記第1導電タイプの前記少なくともひとつの半導体領域が前記第1導電タイプの平板半導体レイヤを含み、
前記青色、緑色および赤色アクティブ領域が前記第1導電タイプの前記平板半導体レイヤを覆って設けられるレイヤを含み、
前記第2導電タイプの前記少なくともひとつの半導体領域が、前記青色、緑色および赤色アクティブ領域を含む前記レイヤを覆って設けられる前記第2導電タイプの少なくともひとつの平板半導体レイヤを含む請求項1に記載のデバイス。 - 発光デバイス(LED)アレイを作成する方法であって、
第1導電タイプの少なくともひとつの半導体領域を形成することと、
前記第1導電タイプの前記少なくともひとつの半導体領域の上の青色、緑色および赤色LED領域に青色アクティブ領域を形成することであって、前記青色アクティブ領域が、バルクのまたは準バルクのInxGa1-xNレイヤまたはGaNあるいはAlGaNバリアレイヤとInxGa1-xNウェルレイヤとを有するひとつ以上の量子井戸を含み、ここでxは0と1との間の実数であることと、
前記緑色および赤色LED領域の前記青色アクティブ領域の上に緑色アクティブ領域を形成することであって、前記緑色アクティブ領域が、バルクのまたは準バルクのInyGa1-yNレイヤまたはGaNあるいはAlGaNバリアレイヤとInyGa1-yNウェルレイヤとを有するひとつ以上の量子井戸を含み、ここでyは0と1との間の実数であることと、
前記赤色LED領域の前記緑色アクティブ領域の上に、前記緑色アクティブ領域に接する赤色アクティブ領域を形成することであって、前記赤色アクティブ領域が、アルミニウムガリウムヒ化物、アルミニウムガリウムインジウムリン化物、ガリウムヒ素リン化物、ガリウムリン化物、InzGa1-zNここで0.4≦z≦0.5でxおよびyは0.3以下、InwGa1-wP1-u-vAsuNvという化学式を有する赤色発光希薄III族窒化物半導体ここでwおよびuは0と1との間の実数であり0.01≦v≦0.1、およびユーロピウムドープガリウム窒化物、から選択される少なくともひとつのバルク、準バルク、または量子井戸レイヤを含むことと、
前記青色、緑色および赤色LED領域の前記青色、緑色および赤色アクティブ領域の上に第2導電タイプの少なくともひとつの半導体領域を形成することと、を含む方法。 - 前記緑色アクティブ領域および前記赤色アクティブ領域がそれぞれ1から100nmの厚さを有し、
前記アレイが、各ピクセルに前記青色LEDと前記緑色LEDと前記赤色LEDを含む直視型マルチカラー発光デバイスを含む請求項5に記載の方法。 - 前記第1導電タイプの前記少なくともひとつの半導体領域を形成することが、前記第1導電タイプの複数の半導体ナノワイヤを形成することを含み、
前記青色、緑色および赤色アクティブ領域が前記複数の半導体ナノワイヤを覆って設けられるシェルを含み、
前記第2導電タイプの前記少なくともひとつの半導体領域を形成することが、前記青色、緑色および赤色アクティブ領域および前記複数の半導体ナノワイヤの周りに、前記第2導電タイプのアウタシェルを形成することを含む請求項5に記載の方法。 - 前記第1導電タイプの前記少なくともひとつの半導体領域を形成することが、前記第1導電タイプの平板半導体レイヤを形成することを含み、
前記青色、緑色および赤色アクティブ領域が前記第1導電タイプの前記平板半導体レイヤを覆って設けられるレイヤを含み、
前記第2導電タイプの前記少なくともひとつの半導体領域を形成することが、前記青色、緑色および赤色アクティブ領域を含む前記レイヤの上に前記第2導電タイプの少なくともひとつの平板半導体レイヤを形成することを含む請求項5に記載の方法。 - 第1ピーク波長の光を発するよう構成された第1発光ダイオードであって、xが0と1との間の実数であるInxGa1-xNを含む第1タイプアクティブ領域を含む第1スタックを含む第1発光ダイオードと、
前記第1波長とは異なる第2波長の光を発するよう構成された第2発光ダイオードであって、前記第1タイプアクティブ領域と、前記第1タイプアクティブ領域とは異なる組成を有し、xが0と1との間の実数であるInxGa1-xNを含む第2タイプアクティブ領域と、を含む第2スタックを含む第2発光ダイオードと、
前記第1波長とも前記第2波長とも異なる第3波長の光を発するよう構成された第3発光ダイオードであって、前記第1タイプアクティブ領域と、前記第2タイプアクティブ領域と、前記第1タイプアクティブ領域とも前記第2タイプアクティブ領域とも異なる組成を有し、ガリウムを含む第3タイプアクティブ領域であって、前記第2タイプアクティブ領域に接している第3タイプアクティブ領域と、を含む第3スタックを含む第3発光ダイオードと、を備える発光デバイス。
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KR20180133436A (ko) | 2018-12-14 |
US9978808B2 (en) | 2018-05-22 |
WO2017192667A1 (en) | 2017-11-09 |
EP3453050A1 (en) | 2019-03-13 |
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