FR3098987B1 - Dispositif optoelectronique dont les pixels contiennent des diodes electroluminescentes emettant plusieurs couleurs et procede de fabrication - Google Patents

Dispositif optoelectronique dont les pixels contiennent des diodes electroluminescentes emettant plusieurs couleurs et procede de fabrication Download PDF

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Publication number
FR3098987B1
FR3098987B1 FR1907920A FR1907920A FR3098987B1 FR 3098987 B1 FR3098987 B1 FR 3098987B1 FR 1907920 A FR1907920 A FR 1907920A FR 1907920 A FR1907920 A FR 1907920A FR 3098987 B1 FR3098987 B1 FR 3098987B1
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Prior art keywords
primary
semiconductor portion
optoelectronic device
manufacturing process
device whose
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FR1907920A
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English (en)
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FR3098987A1 (fr
Inventor
Walf Chikhaoui
Vishnuvarthan Kumaresan
Philippe Gilet
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Aledia
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Aledia
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Priority to FR1907920A priority Critical patent/FR3098987B1/fr
Priority to US17/627,464 priority patent/US20220278081A1/en
Priority to PCT/FR2020/051119 priority patent/WO2021009426A1/fr
Priority to JP2022502149A priority patent/JP2022541170A/ja
Priority to EP20747046.9A priority patent/EP4000092A1/fr
Publication of FR3098987A1 publication Critical patent/FR3098987A1/fr
Application granted granted Critical
Publication of FR3098987B1 publication Critical patent/FR3098987B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

Dispositif optoélectronique (10) comprenant une pluralité de pixels (11) comportant chacun au moins un sous-pixel primaire (11a) comprenant une diode électroluminescente primaire (111) formée sur une face support (110) d’un substrat (101), dotée d’une première portion semiconductrice primaire (112) ayant une forme globalement filaire allongée comportant une extrémité sommitale (112a), une couche d’accommodation de paramètres de maille primaire (113) agencée sur l’extrémité sommitale (112a) de la première portion semiconductrice primaire (112), une deuxième portion semiconductrice active primaire (114) agencée au moins sur la couche d’accommodation de paramètres de maille primaire (113), une troisième portion semiconductrice primaire (115) agencée sur la deuxième portion semiconductrice active primaire (114), dans lequel la couche d’accommodation de paramètres de maille primaire (113) présente, avec la deuxième portion semiconductrice active primaire (114), une première différence de paramètres de maille primaire comprise entre 2.12% et 0.93 % par rapport à la deuxième portion semiconductrice active primaire (114). Figure 9
FR1907920A 2019-07-15 2019-07-15 Dispositif optoelectronique dont les pixels contiennent des diodes electroluminescentes emettant plusieurs couleurs et procede de fabrication Active FR3098987B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1907920A FR3098987B1 (fr) 2019-07-15 2019-07-15 Dispositif optoelectronique dont les pixels contiennent des diodes electroluminescentes emettant plusieurs couleurs et procede de fabrication
US17/627,464 US20220278081A1 (en) 2019-07-15 2020-06-26 Optoelectronic device in which the pixels contain light-emitting diodes that emit several colors and manufacturing method
PCT/FR2020/051119 WO2021009426A1 (fr) 2019-07-15 2020-06-26 Dispositif optoélectronique dont les pixels contiennent des diodes électroluminescentes émettant plusieurs couleurs et procédé de fabrication
JP2022502149A JP2022541170A (ja) 2019-07-15 2020-06-26 画素がいくつかの色を発する発光ダイオードを含む光電子デバイス及び製造方法
EP20747046.9A EP4000092A1 (fr) 2019-07-15 2020-06-26 Dispositif optoélectronique dont les pixels contiennent des diodes électroluminescentes émettant plusieurs couleurs et procédé de fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1907920A FR3098987B1 (fr) 2019-07-15 2019-07-15 Dispositif optoelectronique dont les pixels contiennent des diodes electroluminescentes emettant plusieurs couleurs et procede de fabrication
FR1907920 2019-07-15

Publications (2)

Publication Number Publication Date
FR3098987A1 FR3098987A1 (fr) 2021-01-22
FR3098987B1 true FR3098987B1 (fr) 2021-07-16

Family

ID=68733228

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1907920A Active FR3098987B1 (fr) 2019-07-15 2019-07-15 Dispositif optoelectronique dont les pixels contiennent des diodes electroluminescentes emettant plusieurs couleurs et procede de fabrication

Country Status (5)

Country Link
US (1) US20220278081A1 (fr)
EP (1) EP4000092A1 (fr)
JP (1) JP2022541170A (fr)
FR (1) FR3098987B1 (fr)
WO (1) WO2021009426A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102164796B1 (ko) * 2014-08-28 2020-10-14 삼성전자주식회사 나노구조 반도체 발광소자
KR102337405B1 (ko) * 2014-09-05 2021-12-13 삼성전자주식회사 나노구조 반도체 발광소자
FR3031238B1 (fr) * 2014-12-30 2016-12-30 Aledia Dispositif optoelectronique a diodes electroluminescentes
FR3053530B1 (fr) 2016-06-30 2018-07-27 Aledia Dispositif optoelectronique a pixels a contraste et luminance ameliores

Also Published As

Publication number Publication date
EP4000092A1 (fr) 2022-05-25
US20220278081A1 (en) 2022-09-01
FR3098987A1 (fr) 2021-01-22
WO2021009426A1 (fr) 2021-01-21
JP2022541170A (ja) 2022-09-22

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