FR3064110B1 - Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage - Google Patents
Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage Download PDFInfo
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- FR3064110B1 FR3064110B1 FR1758774A FR1758774A FR3064110B1 FR 3064110 B1 FR3064110 B1 FR 3064110B1 FR 1758774 A FR1758774 A FR 1758774A FR 1758774 A FR1758774 A FR 1758774A FR 3064110 B1 FR3064110 B1 FR 3064110B1
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- substrate
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- optoelectronic devices
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- 239000000758 substrate Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 230000005693 optoelectronics Effects 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000001963 growth medium Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Abstract
L'invention porte sur un substrat de croissance (1) pour la formation de dispositifs optoélectroniques comprenant un support de croissance (2) et, disposée sur le support de croissance (2), un premier groupe d'îlots semi-conducteurs cristallins (3a) présentant un premier paramètre de maille et un deuxième groupe d'îlots semi-conducteur cristallin (3b) présentant un deuxième paramètre de maille, différent du premier. L'invention porte également sur un procédé de fabrication du substrat de croissance, sur un procédé de fabrication collective d'une pluralité de dispositifs optoélectroniques sur le substrat de croissance. Elle s'applique pour fournir un micro-panneau monolithique de diodes électroluminescentes ou un micro-écran d'affichage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1758774A FR3064110B1 (fr) | 2017-03-17 | 2017-09-22 | Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1752230 | 2017-03-17 | ||
FR1752230A FR3064108B1 (fr) | 2017-03-17 | 2017-03-17 | Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage |
FR1758774A FR3064110B1 (fr) | 2017-03-17 | 2017-09-22 | Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3064110A1 FR3064110A1 (fr) | 2018-09-21 |
FR3064110B1 true FR3064110B1 (fr) | 2021-04-30 |
Family
ID=61027774
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1752230A Active FR3064108B1 (fr) | 2017-03-17 | 2017-03-17 | Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage |
FR1758774A Active FR3064110B1 (fr) | 2017-03-17 | 2017-09-22 | Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1752230A Active FR3064108B1 (fr) | 2017-03-17 | 2017-03-17 | Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage |
Country Status (2)
Country | Link |
---|---|
US (1) | US10084011B1 (fr) |
FR (2) | FR3064108B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109378365B (zh) * | 2017-08-08 | 2021-09-14 | 英属开曼群岛商錼创科技股份有限公司 | 微型发光二极管装置及其制作方法 |
FR3088478B1 (fr) * | 2018-11-08 | 2020-10-30 | Soitec Silicon On Insulator | Procede de fabrication collective d'une pluralite de structures semi-conductrices |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5952680A (en) | 1994-10-11 | 1999-09-14 | International Business Machines Corporation | Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications |
GB2451884A (en) * | 2007-08-16 | 2009-02-18 | Sharp Kk | A Semiconductor Device and a Method of Manufacture Thereof |
EP2151852B1 (fr) * | 2008-08-06 | 2020-01-15 | Soitec | Relâchement et transfert de couches tendues |
EP2151856A1 (fr) * | 2008-08-06 | 2010-02-10 | S.O.I. TEC Silicon | Relâchement de couches tendues |
FR2936903B1 (fr) | 2008-10-07 | 2011-01-14 | Soitec Silicon On Insulator | Relaxation d'une couche de materiau contraint avec application d'un raidisseur |
FR2992466A1 (fr) | 2012-06-22 | 2013-12-27 | Soitec Silicon On Insulator | Procede de realisation de contact pour led et structure resultante |
FR2992465B1 (fr) | 2012-06-22 | 2015-03-20 | Soitec Silicon On Insulator | Procede de fabrication collective de leds et structure pour la fabrication collective de leds |
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2017
- 2017-03-17 FR FR1752230A patent/FR3064108B1/fr active Active
- 2017-04-19 US US15/491,827 patent/US10084011B1/en active Active
- 2017-09-22 FR FR1758774A patent/FR3064110B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
US20180269253A1 (en) | 2018-09-20 |
FR3064108A1 (fr) | 2018-09-21 |
US10084011B1 (en) | 2018-09-25 |
FR3064108B1 (fr) | 2022-12-30 |
FR3064110A1 (fr) | 2018-09-21 |
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