FR3064110B1 - Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage - Google Patents

Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage Download PDF

Info

Publication number
FR3064110B1
FR3064110B1 FR1758774A FR1758774A FR3064110B1 FR 3064110 B1 FR3064110 B1 FR 3064110B1 FR 1758774 A FR1758774 A FR 1758774A FR 1758774 A FR1758774 A FR 1758774A FR 3064110 B1 FR3064110 B1 FR 3064110B1
Authority
FR
France
Prior art keywords
substrate
manufacturing
optoelectronic devices
micro
training
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1758774A
Other languages
English (en)
Other versions
FR3064110A1 (fr
Inventor
David Sotta
Olivier Ledoux
Olivier Bonnin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1758774A priority Critical patent/FR3064110B1/fr
Publication of FR3064110A1 publication Critical patent/FR3064110A1/fr
Application granted granted Critical
Publication of FR3064110B1 publication Critical patent/FR3064110B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02458Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639Preparation of substrate for selective deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0093Wafer bonding; Removal of the growth substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/0242Crystalline insulating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02488Insulating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025Physical imperfections, e.g. particular concentration or distribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention porte sur un substrat de croissance (1) pour la formation de dispositifs optoélectroniques comprenant un support de croissance (2) et, disposée sur le support de croissance (2), un premier groupe d'îlots semi-conducteurs cristallins (3a) présentant un premier paramètre de maille et un deuxième groupe d'îlots semi-conducteur cristallin (3b) présentant un deuxième paramètre de maille, différent du premier. L'invention porte également sur un procédé de fabrication du substrat de croissance, sur un procédé de fabrication collective d'une pluralité de dispositifs optoélectroniques sur le substrat de croissance. Elle s'applique pour fournir un micro-panneau monolithique de diodes électroluminescentes ou un micro-écran d'affichage.
FR1758774A 2017-03-17 2017-09-22 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage Active FR3064110B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1758774A FR3064110B1 (fr) 2017-03-17 2017-09-22 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1752230 2017-03-17
FR1752230A FR3064108B1 (fr) 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage
FR1758774A FR3064110B1 (fr) 2017-03-17 2017-09-22 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage

Publications (2)

Publication Number Publication Date
FR3064110A1 FR3064110A1 (fr) 2018-09-21
FR3064110B1 true FR3064110B1 (fr) 2021-04-30

Family

ID=61027774

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1752230A Active FR3064108B1 (fr) 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage
FR1758774A Active FR3064110B1 (fr) 2017-03-17 2017-09-22 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR1752230A Active FR3064108B1 (fr) 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage

Country Status (2)

Country Link
US (1) US10084011B1 (fr)
FR (2) FR3064108B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109378365B (zh) * 2017-08-08 2021-09-14 英属开曼群岛商錼创科技股份有限公司 微型发光二极管装置及其制作方法
FR3088478B1 (fr) * 2018-11-08 2020-10-30 Soitec Silicon On Insulator Procede de fabrication collective d'une pluralite de structures semi-conductrices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100268567B1 (ko) 1994-10-11 2000-10-16 포만 제프리 엘 다중 파장으로 광을 발생시키기 위한 발광 다이오드의 모놀리식 어레이 및 이를 사용한 멀티 컬러 디스플레이
GB2451884A (en) * 2007-08-16 2009-02-18 Sharp Kk A Semiconductor Device and a Method of Manufacture Thereof
EP2151856A1 (fr) * 2008-08-06 2010-02-10 S.O.I. TEC Silicon Relâchement de couches tendues
EP2151852B1 (fr) * 2008-08-06 2020-01-15 Soitec Relâchement et transfert de couches tendues
FR2936903B1 (fr) 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
FR2992465B1 (fr) 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds
FR2992466A1 (fr) 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante

Also Published As

Publication number Publication date
FR3064108A1 (fr) 2018-09-21
FR3064110A1 (fr) 2018-09-21
US10084011B1 (en) 2018-09-25
FR3064108B1 (fr) 2022-12-30
US20180269253A1 (en) 2018-09-20

Similar Documents

Publication Publication Date Title
FR3064110B1 (fr) Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage
TW200610192A (en) Group III nitride semiconductor crystal and manufacturing method of the same, group III nitride semiconductor device and manufacturing method of the same, and light emitting device
US10014436B2 (en) Method for manufacturing a light emitting element
EP3264485A3 (fr) Dispositif d'affichage et son procédé de fabrication
DE602004030161D1 (de) Verringerung von karottendefekten bei der siliciumcarbid-epitaxie
WO2005104780A3 (fr) Dispositifs semi-conducteurs a structure verticale
CA2463169A1 (fr) Methode et dispositif permettant de fabriquer des elements electroluminescents a semiconducteurs
FR2895805B1 (fr) Substrat de reseau de transistors en couches minces pour un afficheur a cristaux liquides et son procede de fabrication
WO2020117032A3 (fr) Mandrin de substrat pour l'auto-assemblage de diodes électroluminescentes à semi-conducteur
WO2010099544A3 (fr) Substrats recouverts pour des procédés de dépôt et de retrait épitaxial
TW200707564A (en) Light-emitting diode, integrated light-emitting diode and production method thereof, nitride-based III-v compound semiconductor deposition method, light source cell unit, light emitting diode backlight, light emitting diode display, and electronic device
ATE546828T1 (de) Verfahren zum herstellen von halbleiterbauelementen auf einem gruppe-iv- substrat mit kontrollierten grenzflächeneigenschaften und diffusionsausläufern
EP2439316A4 (fr) Cristal de nitrure semi-conducteur et procédé pour le fabriquer
JP2006332303A5 (fr)
RU2013144315A (ru) Полупроводниковые устройства и способы изготовления
EP2770545A3 (fr) Substrat de croissance, dispositif à semi-conducteur au nitrure et son procédé de fabrication
WO2013154485A9 (fr) Fabrication d'un dispositif à semi-conducteur
CN109671661A (zh) 微型发光元件结构
PH12019000493A1 (en) Display device
WO2020229043A3 (fr) Composant optoélectronique, pixel, agencement d'affichage et procédé
WO2019202258A3 (fr) Procede de fabrication d'un dispositif optoelectronique a matrice de diodes
SG10201808377WA (en) Wafer Support System, Wafer Support Device, System Comprising A Wafer And A Wafer Support Device As Well As Mask Aligner
TW200723417A (en) Semiconductor package structure and method for separating package of wafer level package
FR3079535B1 (fr) Procede de fabrication d'une couche monocristalline de materiau diamant ou iridium et substrat pour croissance par epitaxie d'une couche monocristalline de materiau diamant ou iridium
US20170148747A1 (en) Stress relief in semiconductor wafers

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20180921

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8