RU2013144315A - Полупроводниковые устройства и способы изготовления - Google Patents
Полупроводниковые устройства и способы изготовления Download PDFInfo
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- RU2013144315A RU2013144315A RU2013144315/28A RU2013144315A RU2013144315A RU 2013144315 A RU2013144315 A RU 2013144315A RU 2013144315/28 A RU2013144315/28 A RU 2013144315/28A RU 2013144315 A RU2013144315 A RU 2013144315A RU 2013144315 A RU2013144315 A RU 2013144315A
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- 239000004065 semiconductor Substances 0.000 title claims abstract 29
- 238000000034 method Methods 0.000 title claims abstract 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract 3
- 239000000463 material Substances 0.000 claims abstract 11
- 239000000758 substrate Substances 0.000 claims abstract 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000011248 coating agent Substances 0.000 claims abstract 3
- 238000000576 coating method Methods 0.000 claims abstract 3
- 239000011159 matrix material Substances 0.000 claims abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract 2
- 238000000137 annealing Methods 0.000 claims abstract 2
- 238000005530 etching Methods 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract 2
- 229910052759 nickel Inorganic materials 0.000 claims abstract 2
- 150000004767 nitrides Chemical class 0.000 claims abstract 2
- 229910052594 sapphire Inorganic materials 0.000 claims abstract 2
- 239000010980 sapphire Substances 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 239000010703 silicon Substances 0.000 claims abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract 2
- 239000000377 silicon dioxide Substances 0.000 claims abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract 2
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- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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Abstract
1. Способ изготовления полупроводникового устройства, содержащий этапы, в которых:(i) обеспечивают полупроводниковую пластину, имеющую полупроводниковый слой;(ii) формируют первый масочный слой поверх полупроводникового слоя;(iii) формируют второй масочный слой поверх первого масочного слоя;(iv) проводят отжиг второго масочного слоя для формирования островков;(v) проводят травление через первый масочный слой и полупроводниковый слой с использованием островков в качестве маски с образованием матрицы из столбиков;(vi) выращивают полупроводниковый материал между столбиками и затем поверх вершин столбиков.2. Способ по п.1, дополнительно содержащий этап, на котором удаляют островки перед выращиванием полупроводникового материала.3. Способ по п.1 или 2, в котором покрытие, сформированное из одного из масочных слоев, оставляют на вершине каждого из столбиков во время выращивания полупроводникового материала.4. Способ по п.1 или 2, в котором полупроводниковый слой поддерживается на подложке.5. Способ по п.4, в котором подложка содержит по меньшей мере одно из сапфира, кремния и карбида кремния.6. Способ по п.1 или 2, в котором полупроводниковый слой формируют из нитрида III группы.7. Способ по п.1 или 2, в котором первый масочный слой формируют из по меньшей мере одного из диоксида кремния и нитрида кремния.8. Способ по п.1 или 2, в котором второй масочный слой формируют из металла.9. Способ по п.8, в котором второй масочный слой формируют из никеля.10. Способ по п.1 или 2, в котором на этапе выращивания остаются зазоры вокруг оснований столбиков.11. Способ по п.10, в котором полупроводниковый материал, выращенный на соседних столбиках, соединяетс
Claims (15)
1. Способ изготовления полупроводникового устройства, содержащий этапы, в которых:
(i) обеспечивают полупроводниковую пластину, имеющую полупроводниковый слой;
(ii) формируют первый масочный слой поверх полупроводникового слоя;
(iii) формируют второй масочный слой поверх первого масочного слоя;
(iv) проводят отжиг второго масочного слоя для формирования островков;
(v) проводят травление через первый масочный слой и полупроводниковый слой с использованием островков в качестве маски с образованием матрицы из столбиков;
(vi) выращивают полупроводниковый материал между столбиками и затем поверх вершин столбиков.
2. Способ по п.1, дополнительно содержащий этап, на котором удаляют островки перед выращиванием полупроводникового материала.
3. Способ по п.1 или 2, в котором покрытие, сформированное из одного из масочных слоев, оставляют на вершине каждого из столбиков во время выращивания полупроводникового материала.
4. Способ по п.1 или 2, в котором полупроводниковый слой поддерживается на подложке.
5. Способ по п.4, в котором подложка содержит по меньшей мере одно из сапфира, кремния и карбида кремния.
6. Способ по п.1 или 2, в котором полупроводниковый слой формируют из нитрида III группы.
7. Способ по п.1 или 2, в котором первый масочный слой формируют из по меньшей мере одного из диоксида кремния и нитрида кремния.
8. Способ по п.1 или 2, в котором второй масочный слой формируют из металла.
9. Способ по п.8, в котором второй масочный слой формируют из никеля.
10. Способ по п.1 или 2, в котором на этапе выращивания остаются зазоры вокруг оснований столбиков.
11. Способ по п.10, в котором полупроводниковый материал, выращенный на соседних столбиках, соединяется на уровне, отдаленном от подложки, таким образом, что зазоры остаются ниже этого уровня.
12. Полупроводниковое устройство, содержащее матрицу из столбиков, сформированных из полупроводникового материала, каждый из которых включает в себя покрытие, сформированное из материала маски, сформированного на его вершине, и полупроводниковый материал, продолжающийся между столбиками и поверх вершины столбиков с образованием сплошного слоя.
13. Полупроводниковое устройство по п.12, сформированное согласно способу по любому из пп.1-11.
14. Полупроводниковое устройство по п.12 или 13, в котором по меньшей мере 90% столбиков имеют диаметр менее 1000 нм.
15. Полупроводниковое устройство по п.12 или 13, в котором столбики имеют высоту по меньшей мере 500 нм.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1103657.1A GB2488587B (en) | 2011-03-03 | 2011-03-03 | Semiconductor devices and fabrication methods |
GB1103657.1 | 2011-03-03 | ||
PCT/GB2012/050458 WO2012117247A1 (en) | 2011-03-03 | 2012-02-29 | Semiconductor devices and fabrication methods |
Publications (1)
Publication Number | Publication Date |
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RU2013144315A true RU2013144315A (ru) | 2015-04-10 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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RU2013144315/28A RU2013144315A (ru) | 2011-03-03 | 2012-02-29 | Полупроводниковые устройства и способы изготовления |
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Country | Link |
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US (1) | US9034739B2 (ru) |
EP (1) | EP2681777A1 (ru) |
JP (1) | JP6242688B2 (ru) |
KR (1) | KR101936970B1 (ru) |
CN (1) | CN103548154A (ru) |
GB (1) | GB2488587B (ru) |
RU (1) | RU2013144315A (ru) |
WO (1) | WO2012117247A1 (ru) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013139888A1 (de) * | 2012-03-21 | 2013-09-26 | Freiberger Compound Materials Gmbh | Verfahren zur herstellung von iii-n-templaten und deren weiterverarbeitung, und iii-n-template |
TWI617045B (zh) * | 2012-07-06 | 2018-03-01 | 晶元光電股份有限公司 | 具有奈米柱之發光元件及其製造方法 |
US9818826B2 (en) * | 2013-10-21 | 2017-11-14 | Sensor Electronic Technology, Inc. | Heterostructure including a composite semiconductor layer |
GB2520687A (en) * | 2013-11-27 | 2015-06-03 | Seren Photonics Ltd | Semiconductor devices and fabrication methods |
GB2522406A (en) * | 2014-01-13 | 2015-07-29 | Seren Photonics Ltd | Semiconductor devices and fabrication methods |
US9218965B2 (en) * | 2014-03-28 | 2015-12-22 | National Tsing Hua University | GaN epitaxial growth method |
WO2015163908A1 (en) * | 2014-04-25 | 2015-10-29 | The Texas State University-San Marcos | Material selective regrowth structure and method |
TWI568016B (zh) * | 2014-12-23 | 2017-01-21 | 錼創科技股份有限公司 | 半導體發光元件 |
GB201507665D0 (en) * | 2015-05-05 | 2015-06-17 | Seren Photonics Ltd | Semiconductor templates and fabrication methods |
DE102015107661B4 (de) * | 2015-05-15 | 2021-03-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Nitridverbindungshalbleiter-Bauelements |
TWI569464B (zh) * | 2015-10-22 | 2017-02-01 | 隆達電子股份有限公司 | 化合物半導體薄膜結構 |
US11063572B2 (en) * | 2016-12-15 | 2021-07-13 | Qorvo Us, Inc. | Polarity patterned piezoelectric film |
JP6954562B2 (ja) * | 2017-09-15 | 2021-10-27 | セイコーエプソン株式会社 | 発光装置およびその製造方法、ならびにプロジェクター |
JP7287909B2 (ja) | 2019-01-31 | 2023-06-06 | 三協立山株式会社 | 単体サッシ |
JP7337000B2 (ja) | 2019-01-31 | 2023-09-01 | 三協立山株式会社 | 窓 |
EP3812487A1 (en) | 2019-10-25 | 2021-04-28 | Xie, Fengjie | Non-polar iii-nitride binary and ternary materials, method for obtaining thereof and uses |
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Publication number | Priority date | Publication date | Assignee | Title |
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EP2234142A1 (en) * | 1997-04-11 | 2010-09-29 | Nichia Corporation | Nitride semiconductor substrate |
JP2001185493A (ja) * | 1999-12-24 | 2001-07-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体の製造方法及びiii族窒化物系化合物半導体素子 |
US20040029365A1 (en) * | 2001-05-07 | 2004-02-12 | Linthicum Kevin J. | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
CA2522358A1 (en) * | 2003-04-04 | 2004-10-14 | Startskottet 22286 Ab | Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
US20050186764A1 (en) | 2004-02-20 | 2005-08-25 | National Chiao Tung University | Method for lifting offGaN pseudomask epitaxy layerusing wafer bonding way |
US7700477B2 (en) | 2004-02-24 | 2010-04-20 | Panasonic Corporation | Method for fabricating semiconductor device |
TWI278908B (en) * | 2004-07-14 | 2007-04-11 | Global Union Technology Co Ltd | Method and apparatus for application of forming a roughness surface with nanorods |
TW200703463A (en) * | 2005-05-31 | 2007-01-16 | Univ California | Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) |
KR100643473B1 (ko) * | 2005-09-06 | 2006-11-10 | 엘지전자 주식회사 | 나노 로드를 갖는 발광 소자 및 그의 제조 방법 |
KR100668964B1 (ko) * | 2005-09-27 | 2007-01-12 | 엘지전자 주식회사 | 나노 홈을 갖는 발광 소자 및 그의 제조 방법 |
KR20070063731A (ko) * | 2005-12-15 | 2007-06-20 | 엘지전자 주식회사 | 나노 패턴이 형성된 기판의 제조방법 및 그 기판을 이용한발광소자 |
GB0701069D0 (en) * | 2007-01-19 | 2007-02-28 | Univ Bath | Nanostructure template and production of semiconductors using the template |
GB2470097B (en) | 2007-02-09 | 2011-01-05 | Nanogan Ltd | Production of semiconductor devices |
US8652947B2 (en) | 2007-09-26 | 2014-02-18 | Wang Nang Wang | Non-polar III-V nitride semiconductor and growth method |
-
2011
- 2011-03-03 GB GB1103657.1A patent/GB2488587B/en not_active Expired - Fee Related
-
2012
- 2012-02-29 RU RU2013144315/28A patent/RU2013144315A/ru not_active Application Discontinuation
- 2012-02-29 CN CN201280021446.1A patent/CN103548154A/zh active Pending
- 2012-02-29 EP EP12715701.4A patent/EP2681777A1/en not_active Withdrawn
- 2012-02-29 WO PCT/GB2012/050458 patent/WO2012117247A1/en active Application Filing
- 2012-02-29 JP JP2013555936A patent/JP6242688B2/ja not_active Expired - Fee Related
- 2012-02-29 KR KR1020137024433A patent/KR101936970B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
US9034739B2 (en) | 2015-05-19 |
GB2488587B (en) | 2015-07-29 |
CN103548154A (zh) | 2014-01-29 |
JP2014509781A (ja) | 2014-04-21 |
JP6242688B2 (ja) | 2017-12-06 |
US20140299968A1 (en) | 2014-10-09 |
EP2681777A1 (en) | 2014-01-08 |
WO2012117247A1 (en) | 2012-09-07 |
KR20140050592A (ko) | 2014-04-29 |
KR101936970B1 (ko) | 2019-04-03 |
GB2488587A (en) | 2012-09-05 |
GB201103657D0 (en) | 2011-04-13 |
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