WO2010147357A3 - 이종 기판, 그를 이용한 질화물계 반도체 소자 및 그의 제조 방법 - Google Patents

이종 기판, 그를 이용한 질화물계 반도체 소자 및 그의 제조 방법 Download PDF

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Publication number
WO2010147357A3
WO2010147357A3 PCT/KR2010/003828 KR2010003828W WO2010147357A3 WO 2010147357 A3 WO2010147357 A3 WO 2010147357A3 KR 2010003828 W KR2010003828 W KR 2010003828W WO 2010147357 A3 WO2010147357 A3 WO 2010147357A3
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Prior art keywords
layer
nitride
grown
buffer layer
polar
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PCT/KR2010/003828
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English (en)
French (fr)
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WO2010147357A2 (ko
WO2010147357A4 (ko
Inventor
황성민
백광현
서용곤
윤형도
박재현
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전자부품연구원
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Priority claimed from KR1020090053115A external-priority patent/KR101028585B1/ko
Priority claimed from KR1020100029342A external-priority patent/KR101104239B1/ko
Application filed by 전자부품연구원 filed Critical 전자부품연구원
Priority to JP2012514892A priority Critical patent/JP2012530027A/ja
Publication of WO2010147357A2 publication Critical patent/WO2010147357A2/ko
Publication of WO2010147357A3 publication Critical patent/WO2010147357A3/ko
Publication of WO2010147357A4 publication Critical patent/WO2010147357A4/ko
Priority to US13/327,647 priority patent/US8878211B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

본 발명은 이종 기판, 그를 이용한 질화물계 반도체 소자 및 그의 제조 방법에 관한 것으로, 이종 기판의 무극성 또는 반극성면에 결정 성장 모드를 조절하여 고품질의 무극성 또는 반극성 질화물층을 형성하기 위한 것이다. 본 발명에 따르면, 무극성 또는 반극성면 중에 하나를 갖는 베이스 기판을 준비하고, 준비된 베이스 기판의 면에 질화물계 결정성장핵층을 형성한다. 결정성장핵층 위에 제1 버퍼층을 성장시키되, 수평 방향에 비해서 수직 방향으로 더 빨리 성장시킨다. 제1 버퍼층 위에 수평성장층을 성장시키되, 수직 방향에 비해서 수평 방향으로 더 빨리 성장시킨다. 그리고 수평성장층 위에 제2 버퍼층을 성장시킨다. 이때 제1 버퍼층 위의 수평성장층과 제2 버퍼층 사이에 복수의 구멍을 갖는 질화실리콘층을 더 형성할 수 있다.
PCT/KR2010/003828 2009-06-15 2010-06-15 이종 기판, 그를 이용한 질화물계 반도체 소자 및 그의 제조 방법 WO2010147357A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012514892A JP2012530027A (ja) 2009-06-15 2010-06-15 異種基板、それを利用した窒化物系半導体素子及びその製造方法
US13/327,647 US8878211B2 (en) 2009-06-15 2011-12-15 Heterogeneous substrate, nitride-based semiconductor device using same, and manufacturing method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0053115 2009-06-15
KR1020090053115A KR101028585B1 (ko) 2009-06-15 2009-06-15 이종 기판, 그를 이용한 질화물계 반도체 소자 및 그의 제조 방법
KR1020100029342A KR101104239B1 (ko) 2010-03-31 2010-03-31 이종 기판, 그를 이용한 질화물계 반도체 소자 및 그의 제조 방법
KR10-2010-0029342 2010-03-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/327,647 Continuation US8878211B2 (en) 2009-06-15 2011-12-15 Heterogeneous substrate, nitride-based semiconductor device using same, and manufacturing method thereof

Publications (3)

Publication Number Publication Date
WO2010147357A2 WO2010147357A2 (ko) 2010-12-23
WO2010147357A3 true WO2010147357A3 (ko) 2011-03-03
WO2010147357A4 WO2010147357A4 (ko) 2011-05-12

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US (1) US8878211B2 (ko)
JP (1) JP2012530027A (ko)
WO (1) WO2010147357A2 (ko)

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KR101890751B1 (ko) 2012-09-05 2018-08-22 삼성전자주식회사 질화물 반도체 디바이스 및 그 제조 방법
KR101504731B1 (ko) * 2012-11-30 2015-03-23 주식회사 소프트에피 3족 질화물 반도체 적층체
KR102061696B1 (ko) 2013-11-05 2020-01-03 삼성전자주식회사 반극성 질화물 반도체 구조체 및 이의 제조 방법
KR101803929B1 (ko) * 2016-03-10 2018-01-11 주식회사 소프트에피 근자외선 발광 반도체 발광소자 및 이에 사용되는 3족 질화물 반도체 템플릿
KR20180069403A (ko) * 2016-12-15 2018-06-25 삼성전자주식회사 질화 갈륨 기판의 제조 방법
JP2019151922A (ja) * 2018-02-28 2019-09-12 株式会社Flosfia 積層体および半導体装置
KR102620159B1 (ko) 2018-10-08 2024-01-02 삼성전자주식회사 반도체 발광 소자

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Also Published As

Publication number Publication date
US8878211B2 (en) 2014-11-04
WO2010147357A2 (ko) 2010-12-23
US20120086017A1 (en) 2012-04-12
WO2010147357A4 (ko) 2011-05-12
JP2012530027A (ja) 2012-11-29

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