WO2017016527A3 - 一种生长在Si衬底上的GaAs薄膜及其制备方法 - Google Patents

一种生长在Si衬底上的GaAs薄膜及其制备方法 Download PDF

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WO2017016527A3
WO2017016527A3 PCT/CN2016/095921 CN2016095921W WO2017016527A3 WO 2017016527 A3 WO2017016527 A3 WO 2017016527A3 CN 2016095921 W CN2016095921 W CN 2016095921W WO 2017016527 A3 WO2017016527 A3 WO 2017016527A3
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substrate
thin film
gaas
buffer layer
film grown
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WO2017016527A2 (zh
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李国强
高芳亮
温雷
张曙光
李景灵
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华南理工大学
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Priority to US15/563,599 priority patent/US10541133B2/en
Publication of WO2017016527A2 publication Critical patent/WO2017016527A2/zh
Publication of WO2017016527A3 publication Critical patent/WO2017016527A3/zh

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Abstract

一种生长在Si衬底上的GaAs薄膜的制备方法，包括以下步骤：(1)Si(111)衬底清洗；(2)Si(111)衬底预处理；(3)Si(111)衬底脱氧化膜；(4)第一In xGa 1-xAs缓冲层的生长；(5)第一In xGa 1-xAs缓冲层的原位退火；(6)GaAs缓冲层的生长；(7)GaAs缓冲层的原位退火；(8)第二In xGa 1-xAs缓冲层的生长；(9)第二In xGa 1-xAs缓冲层的原位退火；(10)GaAs外延薄膜的生长。该申请还公开了生长在Si衬底上的GaAs薄膜。该申请得到的GaAs薄膜晶体质量好，表面平整，对半导体器件的制备，尤其是太阳电池领域，有着积极的促进意义。
PCT/CN2016/095921 2015-07-30 2016-08-18 一种生长在Si衬底上的GaAs薄膜及其制备方法 WO2017016527A2 (zh)

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SG11201707558SA SG11201707558SA (en) 2015-07-30 2016-08-18 Gaas thin film grown on si substrate, and preparation method for gaas thin film grown on si substrate
US15/563,599 US10541133B2 (en) 2015-07-30 2016-08-18 GaAs thin film grown on Si substrate, and preparation method for GaAs thin film grown on Si substrate

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CN201510466401.0A CN105023962B (zh) 2015-07-30 2015-07-30 一种生长在Si衬底上的GaAs薄膜及其制备方法

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CN105023962B (zh) * 2015-07-30 2017-03-08 华南理工大学 一种生长在Si衬底上的GaAs薄膜及其制备方法
CN105624792B (zh) * 2016-03-24 2019-07-05 中国科学院半导体研究所 一种硅基GaAs单晶薄膜及其制备方法
CN105938856B (zh) * 2016-06-27 2018-02-09 山东浪潮华光光电子股份有限公司 一种Si衬底GaAs单结太阳能电池结构及其制备方法
CN106435721A (zh) * 2016-09-22 2017-02-22 东莞市联洲知识产权运营管理有限公司 一种GaAs/Si外延材料制备方法
CN107293611A (zh) * 2017-07-04 2017-10-24 上海集成电路研发中心有限公司 短波红外二极管及其形成方法
TWI725418B (zh) * 2019-04-24 2021-04-21 行政院原子能委員會核能研究所 磊晶於異質基板之結構及其製備方法
CN112420511A (zh) * 2020-11-23 2021-02-26 陕西科技大学 一种GaAs衬底的退火处理方法

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SG11201707558SA (en) 2017-10-30
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WO2017016527A2 (zh) 2017-02-02
CN105023962A (zh) 2015-11-04
US20180090316A1 (en) 2018-03-29

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